KBPC15, 25, 35S SERIES
15, 25, 35A IN-LINE BRIDGE RECTIFIER
Data sheet 1300, Rev. B
Features
Diffused Junction
Low Forward Voltage Drop
High Current Capability A
High Reliability
High Surge Current Capability
Ideal for Printed Circuit Boards
Designed for Saving Mounting Space
- ~ ~ +
Mechanical Data C
Case: Epoxy Case with Heat Sink Internally D
Mounted in the Bridge Encapsulation
Terminals: Plated Leads Solderable per E E
MIL-STD-202, Method 208
Polarity: As Marked on Body META L HEAT SINK
Weight: 30 grams (approx.) G B
Mounting Position: Any
Marking: Type Number
H
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise speci fied
Single Phase, half wave, 60Hz, resist i ve or i nductive load.
For capacitive load, derate c urrent by 20%.
Characteristics Symbol -00S -01S -02S -04S -06S -08S -10S Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR 50 100 200 400 600 800 1000 V
RMS Reverse Voltage VR(RMS) 35 70 140 280 420 560 700 V
Average Rectified Output Current
@TC = 60°C
KBPC15
KBPC25
KBPC35 IO 15
25
35 A
Non-Repetiti ve P eak Forward Surge Current,
8.3m s Single Hal f-sine-wave Superimposed
on Rated Load (JEDEC Method)
KBPC15
KBPC25
KBPC35 IFSM 300
300
400 A
Forward Voltage Drop
(per element)
KBPC15 @IF = 7.5A
KBPC25 @IF = 12.5A
KBPC35 @IF = 17.5A VFM 1.2 V
Peak Reverse Current at @T
A = 25°C
Rated DC Blocking Voltage (per element) @TA = 100°C IR 10
1.0 µA
mA
I
2t Rating for Fusing (t < 8. 3ms) (Note 1) KBPC15
KBPC25
KBPC35 I2t 374
374
664 A2s
Typical Thermal Resistance (per el ement) (Note 2) RθJC 2.0 K/W
RMS Isolation Voltage from Case to Lead VISO 2500 V
Operating and Storage Temperat ure Range Tj, TSTG -55 to +150 °C
Note: 1. Non-repetit i ve f or t > 1ms and < 8.3ms.
2. Thermal resi stance junc t i on to case per el ement mounted on 8" x 8" x 25" thick A L plate.
KBPC-S
Dim Min Max Min Max
A28.40 28.70 1.12 1.13
B10.97 11.23 0.432 0.442
C13.90 — 0.547 —
D19.10 — 0.752 —
E 4.90 5.20 0.193 0.205
G1.20 Ø Typic al 0.047 ØTypical
H
3.05 3.60 0.120 0.142
In mm In inch
SENSITRON
SEMICONDUCTOR
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0.01
0.1
1.0
10
100
0 0.4 0.8 1.0 1.6 1.80.60.2 1.2 1.4
I , INSTANTANEOUS FORWARD CURRENT (A)
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics (per element)
F
T = 25°C
j
Pulse Width = 300µs
0
100
200
300
400
1 10 100
I , PEAK FWD. SURGE CURRENT (A)
FSM
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Max Non-Repetitive Surge Current
Single Half-Sine Wave
(JEDEC Method)
T = 150°C
j
10
100
1000
0.1 1.0 10 100
C , CAPACITANCE (pF)
j
V , REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance (per element)
R
f=1Mhz
T = 25°C
j
0.01
0.1
1.0
10
100
4020 60 80 100 120 140
I , INSTANTANEOUS REVERSE CURRENT (µA)
R
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 5 Typical Reverse Characteristics (per element)
T = 125°C
j
T = 25°C
j
0
10
20
0 25 50 75 100 125 150
I , AVERAGE FORWARD CURRENT (A)
F
T , CASE TEMPERATURE (°C)
Fig. 1 Forward. Current Derating Curve
C
Resistive or
Inductive load
Mounted on a
220x220x50mm
AL plate heatsink
30
40
KBPC15
KBPC25
KBPC35
KBPC15, 25
KBPC35
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B
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SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
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