(Standard type) TESTING VDE (Reinforced type) PhotoMOS RELAYS GU (General Use)-E Type [1-Channel (Form B) Type] , , 4. Low-level off state leakage current The SSR has an off state leakage current of several milliamperes, whereas the PhotoMOS relay has only 100 pA even with the rated load voltage of 400 V (AQV414E). 5. Reinforced insulation 5,000 V type also available. More than 0.4 mm internal insulation distance between inputs and outputs. Conforms to EN41003, EN60950 (reinforced insulation). , , Cross section of the normally-closed type of power MOS 6.40.05 .252.002 8.80.05 .346.002 Passivation membrane Intermediate Source electrode Gate electrode insulating membrane 3.90.2 .154.008 6.40.05 .252.002 8.80.05 .346.002 N+ P+ N+ 3.60.2 .142.008 N+ P+ N+ Gate oxidation membrane N- Drain electrode N+ mm inch 2. Controls low-level analog signals PhotoMOS relays feature extremely low closed-circuit offset voltage to enable control of low-level analog signals without distortion. 3. High sensitivity, low ON resistance Can control a maximum 0.13 A load current with a 5 mA input current. Low ON resistance of 18 (AQV410EH). Stable operation because there are no metallic contact parts. FEATURES 1. Low on resistance for normallyclosed type This has been realized thanks to the builtin MOSFET processed by our proprietary method, DSD (Double-diffused and Selective Doping) method. TYPICAL APPLICATIONS * Security equipment * Telepone equipment (Dial pulse) * Measuring equipment TYPES Part No. Output rating* Type AC/DC type I/O isolation voltage Through hole terminal Packing quantity Surface-mount terminal Tape and reel packing style Picked from the Picked from the 1/2/3-pin side 4/5/6-pin side Load voltage Load current 1,500 V AC (Standard) 400 V 120 mA AQV414E AQV414EA AQV414EAX AQV414EAZ 5,000 V AC (Reinforced) 350 V 400 V 130 mA 120 mA AQV410EH AQV414EH AQV410EHA AQV414EHA AQV410EHAX AQV414EHAX AQV410EHAZ AQV414EHAZ Tube packing style Tube Tape and reel 1 tube contains 50 pcs. 1 batch contains 500 pcs. 1,000 pcs. *Indicate the peak AC and DC values. Note: For space reasons, the package type indicator "X" and "Z" are omitted from the seal. RATING 1. Absolute maximum ratings (Ambient temperature: 25C 77F) Item Input LED forward current LED reverse voltage Peak forwrd current Power dissipation Load voltage (peak AC) Continuous load current Symbol IF VR IFP Pin VL IL Output Peak load current Ipeak Power dissipation Total power dissipation I/O isolation voltage Pout PT Viso Temperature limits 532 Type of connection A B C AQV414E(A) AQV410EH(A) AQV414EH(A) 400 V 0.12 A 0.13 A 0.15 A 50 mA 3V 1A 75 mW 350 V 0.13 A 0.15 A 0.17 A 400 V 0.12 A 0.13 A 0.15 A 0.3 A 0.4 A 0.3 A 1,500 V AC 500 mW 550 mW 5,000 V AC 5,000 V AC Remarks f = 100 Hz, Duty factor = 0.1% Operating Topr -40C to +85C -40F to +185F Storage Tstg -40C to +100C -40F to +212F A connection: Peak AC, DC B,C connection: DC A connection: 100 ms (1 shot), VL = DC Non-condensing at low temperatures AQV414E, AQV41EH 2. Electrical characteristics (Ambient temperature: 25C 77F) Type of Symbol connection Item LED operate (OFF) current Input LED reverse (ON) current LED dropout voltage Typical Maximum Minimum Typical Typical Maximum Typical Maximum AQV414E(A) Maximum Output IFon -- VF -- Ron A 50 Ron B Ron C ILeak -- Toff -- Ton -- Ciso -- Riso -- Maximum Switching speed Transfer characteristics Operate (OFF) time* Reverse (ON) time* I/O capacitance Initial I/O isolation resistance Maximum Typical Maximum Typical Maximum Typical Maximum Minimum 1.9 mA 1.75 mA 3.0 mA 0.3 mA 0.4 mA 0.3 mA 1.40 mA 1.8 mA 1.70 mA 1.14 V (1.25 V at IF= 50 mA) 1.5 V 26 18 25.2 -- Typical Off state leakage current 1.45 mA IFoff Typical On resistance AQV410EH(A) AQV414EH(A) 35 50 20 13 19 25 17.5 25 10 6.5 10 12.5 8.8 12.5 1 A 10 A 10 A 0.7 ms 2.0 ms 0.1 ms 1.0 ms 0.8 pF 1.5 ms 3.0 ms 0.3 ms 1.5 ms 0.8 pF 1.5 pF 1.3 ms 3.0 ms 0.3 ms 1.5 ms 0.8 pF 1,000 M Note: Recommendable LED forward current Standard type IF = 5 mA Reinforced type IF = 5 to 10 mA *Operate/Reverse time Condition IL= Max. IL= Max. IF= 5 mA IF = 0 mA IL= Max. Within 1 s on time IF= 0 mA IL= Max. Within 1 s on time IF= 0 mA IL= Max. Within 1 s on time IF= 5 mA VL = Max. IF = 0 mA 5 mA IL = Max. IF= 5 mA 0 mA IL = Max. f = 1 MHz VB = 0 500 V DC For type of connection, see Page 445. Input Output 10% 90% Toff Ton For Dimensions, see Page 440. For Schematic and Wiring Diagrams, see Page 445. For Cautions for Use, see Page 449. REFERENCE DATA 1. Load current vs. ambient temperature characteristics 2. On resistance vs. ambient temperature characteristics 3. Operate (OFF) time vs. ambient temperature characteristics Allowable ambient temperature: -40C to +85C -40F to +185F Type of connection: A Measured portion: between terminals 4 and 6; LED current: 0 mA; Load voltage: Max. (DC); Continuous load current: Max. (DC) LED current: 5mA; Load voltage: Max. (DC); Continuous load current: Max. (DC) AQV414E(H) 100 80 60 5.0 40 30 AQV414(EH) 20 40 AQV410EH Operate (OFF) time, ms Load current, mA 120 50 AQV410EH On resistance, 140 4.0 AQV410EH AQV414EH 3.0 2.0 10 1.0 0 0 20 AQV414E 0 -40 -20 0 20 40 60 80 85 100 Ambient temperature, C -40 -20 0 20 40 60 8085 Ambient temperature, C -40 -20 0 20 40 60 80 85 Ambient temperature, C 533 AQV414E, AQV41EH 4. Reverse (ON) time vs. ambient temperature characteristics 5. LED operate (OFF) current vs. ambient temperature characteristics 6. LED reverse (ON) current vs. ambient temperature characteristics LED current: 5 mA; Load voltage: Max. (DC); Continuous load current: Max. (DC) Load voltage: Max. (DC); Continuous load current: Max. (DC) Load voltage: Max. (DC); Continuous load current: Max. (DC) AQV410EH AQV414EH 0.4 0.2 AQV414E 0 -40 -20 4 AQV410EH AQV414EH 3 2 AQV414E -40 -20 8. Voltage vs. current characteristics of output at MOS portion LED current: 5 to 50 mA Measured portion: between terminals 4 and 6; Ambient temperature: 25C 77F Current, mA LED dropout voltage, V 140 AQV410EH 120 100 AQV414EH 80 60 AQV414E 40 20 -3 -2.5 -2 -1.5 -1 -0.5 0.5 1 1.5 2 2.5 3 -20 Voltage, V -40 -60 -80 -100 -120 -140 1.4 1.3 1.2 50mA 30mA 20mA 10mA 5mA 1.1 1.0 0 -40 -20 0 20 40 60 80 85 Ambient temperature, C AQV410EH 3 AQV414EH 2 0 0 20 40 60 8085 Ambient temperature, C 7. LED dropout voltage vs. ambient temperature characteristics 1.5 4 AQV414E 1 1 0 0 20 40 60 80 85 Ambient temperature, C LED reverse (ON) current, mA 0.6 5 5 -40 -20 0 20 40 60 80 85 Ambient temperature, C 9. Off state leakage current Measured portion: between terminals 4 and 6; LED current: 5 mA; Ambient temperature: 25C 77F Off state leakage current, A LED operate (OFF) curremt, mA Reverse (ON) time, ms 0.8 10 -3 10 -6 10 -9 10 -12 0 20 40 60 80 Load voltage, V 100 10. LED forward current vs. operate (OFF) time characteristics 11. LED forward current vs. reverse (ON) time characteristics 12. Applied voltage vs. output capacitance characteristics Measured portion: between terminals 4 and 6; Load voltage: Max. (DC); Continuous load current: Max. (DC); Ambient temperature: 25C 77F Measured portion: between terminals 4 and 6; Load voltage: Max. (DC); Continuous load current: Max. (DC); Ambient temperature: 25C 77F Measured portion: between terminals 4 and 6; Frequency: 1 MHz; Ambient temperature: 25C 77F 0.5 AQV410EH AQV414EH 6.0 4.0 2.0 0 534 9/1/2000 120 Output capacitance, pF 8.0 Reverse (ON) time, ms Operate (OFF) time, ms 10.0 AQV414EH 0.4 AQV410EH 0.3 0.2 AQV414E 0.1 10 AQV414E 50 20 30 40 LED forward current, mA 0 100 80 60 40 20 0 10 20 30 40 50 LED forward current, mA 60 0 10 20 30 40 50 Applied voltage, V All Rights Reserved, (c) Copyright Matsushita Electric Works, Ltd. Go To Online Catalog