- Low power loss, high current capability, low VF
- Surface mount device type
- Moisture sensitivity level 1
- Matte Tin (Sn) lead finish with Nickel (Ni) underplate
- Packing code with suffix "G" means
green compound (halogen-free)
- Case: Bend lead SOD-123 small outline plastic package
- Polarity: Indicated by cathode band
- Weight: 0.01 g (approximately)
SYMBOL UNIT
P
D
mW
V
RRM
V
V
R
V
I
O
mA
I
FSM
A
R
θJA o
C/W
T
J
, T
STG o
C
Notes: 1. Test Condition: 8.3ms single half sine-wave superimposed on rated load
Notes: 2. Valid provided that electrodes are kept at ambient temperature
SYMBOL UNIT
I
R
=250μA
I
R
=130μA
I
R
=20μA
I
F
=100mA
I
F
=500mA
I
F
=1000mA
V
R
= 10V
V
R
= 15V
V
R
= 20V
V
R
= 30V
V
R
= 40V
V
R
= 0 V C
J
pF
Document Number: DS_S1412004 Version: H14
Taiwan Semiconductor
Small Signal Product
Low VF SMD Schottky Barrier Diode
FEATURES
Thermal Resistance (Junction to Ambient) (Note 2)
14 21
Repetitive Peak Reverse Voltage
Mean Forward Current @ T
L
=100
o
C (Lead Temperature)
Non-Repetitive Peak Forward Surge Current (Note 1)
solderable per MIL-STD-202, Method 208 guarantee
- High temperature soldering guaranteed : 260°C/10s
0.375
30
-
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T
A
=25℃ unless otherwise noted)
PARAMETER
Reverse Breakdown Voltage
(Minimum Value)
40-
Reverse Voltage
- - 0.620
V
F
Forward Voltage
(Maximum Value) T
J
= 25
o
C
B0520LW,B0530W,B0540W
Junction and Storage Temperature Range
Power Dissipation
PARAMETER B0520L
B0530
B0540
SOD-123
MECHANICAL DATA
- Terminal: Matte tin plated, lead free,
V
B0520L
B0530
B0540
-
410
5.5
500
20
V
μA
28
403020
-55 to +125
244
10
-
-
--
-
0.385 0.430 0.510
-
75
-
--20
-
20 -
250 -
Junction Capacitance
T
J
= 25
o
C
f=1.0MHz
-
V
(BR)
0.300
170
Reverse Leakage Current
(Maximum Value)
130
I
R