PZT3904
1 Nov-30-2001
NPN Silicon Switching Transistor
High DC current gain: 0.1mA to 100mA
Low collector-emitter saturation voltage
Complementary type: PZT3906 (PNP)
VPS05163
123
4
Type Marking Pin Configuration Package
PZT3904 ZT 3904 1 = B 2 = C 3 = E 4 = C SOT223
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage VCEO 40 V
Collector-base voltage 60
VCBO 6Emitter-base voltage VEBO
DC collector current IC200 mA
Total power dissipation, TS = 72 °C Ptot W1.5
150Junction temperature Tj°C
Storage temperature Tst
g
-65 ... 150
Thermal Resistance
Junction - soldering point1) RthJS
52 K/W
1For calculation of RthJA please refer to Application Note Thermal Resistance
PZT3904
2 Nov-30-2001
Electrical Characteristics at T
A
= 25°C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0 V(BR)CEO 40 - - V
Collector-base breakdown voltage
IC = 10 µA, IE = 0 V(BR)CBO 60 - -
Emitter-base breakdown voltage
IE = 10 µA, IC = 0 V(BR)EBO 6 - -
Collector cutoff current
VCB = 30 V, IE = 0 ICBO - - 50 nA
Collector-emitter cutoff current
VCE = 30 V, -VBE = 0.5 V ICEV - - 50
Base-emitter cutoff current
VCE = 30 V, -VBE = 0.5 IBEV - - 50
DC current gain 1)
IC = 0.1 mA, VCE = 1 V
IC = 1 mA, VCE = 1 V
IC = 10 mA, VCE = 1 V
IC = 50 mA, VCE = 1 V
IC = 100 mA, VCE = 1 V
hFE
40
70
100
60
30
-
-
-
-
-
-
-
300
-
-
-
Collector-emitter saturation voltage1)
IC = 10 mA, IB = 1 mA
IC = 50 mA, IB = 5 mA
VCEsat
-
-
-
-
0.2
0.3
V
Base-emitter saturation voltage 1)
IC = 100 mA, IB = 1 mA
IC = 50 mA, IB = 5 mA
VBEsat
-
-
-
-
0.85
0.9
1) Pulse test: t ≤=300µs, D = 2%
PZT3904
3 Nov-30-2001
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter ValuesSymbol Unit
max.min. typ.
AC Characteristics
fT300Transition frequency
IC = 10 mA, VCE = 20 V, f = 100 MHz - MHz-
Ccb - - pF4Collector-base capacitance
VCB = 5 V, f = 1 MHz
Ceb
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz - - 8
F-Noise figure
IC = 100 µA, VCE = 5 V, RS = 1 k
,
f = 10Hz to 15.7kHz,
5- dB
h11e 1 10Short-circuit input impedance
IC = 1 mA, VCE = 10 V, f = 1 kHz -k
Open-circuit reverse voltage transf.ratio
IC = 1 mA, VCE = 10 V, f = 1 kHz h12e -10-4
80.5
Short-circuit forward current transf.ratio
IC = 1 mA, VCE = 10 V, f = 1 kHz 100
h21e - -400
Open-circuit output admittance
IC = 1 mA, VCE = 10 V, f = 1 kHz
S
40
h22e -1
Delay time
VCC = 3 V, IC = 10 mA, IB1 = 1 mA,
VBE(off) = 0.5 V
- 35 ns-
td
Rise time
VCC = 3 V, IC = 10 mA, IB1 = 1 mA,
VBE(off) = 0.5 V
tr- 35-
tstg - - 200Storage time
VCC = 3 V, IC = 10 mA, IB1=IB2 = 1mA
Fall time
VCC = 3 V, IC = 10 mA, IB1=IB2 = 1mA tf- - 50
PZT3904
4 Nov-30-2001
Test circuits
Delay and rise time
EHN00061
275
10 k
+3.0 V
0-0.5 V <4.0 pF
C
+10.9 V
D= 2%300 ns
<1.0 ns
Ω
Ω
Storage and fall time
EHN00062
275
10
+3.0 V
0
-9.1 <4.0 pF
C
+10.9 V
D= 2%
1N916
<1.0
t
1
µs50010 t
1
Ω
Ω
V
k
ns
<<
PZT3904
5 Nov-30-2001
Saturation voltage IC = f (VBEsat, VCEsat)
hFE = 10
EHP00711PZT 3904
2
0V
BE sat
C
10
1
10
0
5
Ι
V
mA
0.2 0.4 0.6 0.8 1.0 1.2
CE sat
V,
5
10
2
V
BE
V
CE
Total power dissipation Ptot = f(TS)
0 15 30 45 60 75 90 105 120 °C 150
TS
0
150
300
450
600
750
900
1050
1200
1350
mW
1650
Ptot
Permissible pulse load
Ptotmax / PtotDC = f (tp)
10
EHP00293PZT 3904
-6 -5
10
0
10s
0
10
2
10
5
5
10
-4
10
-3
10
-2
10
1
5
D
=
0.005
0.01
0.02
0.05
0.1
0.2
0.5
0
totmax
tot
P
DC
P
p
t
t
p
=
DT
t
p
T
DC current gain hFE = f (IC)
VCE = 10V, normalized
EHP00712PZT 3904
10
10 mA
h
C
5
FE
10
1
0
10
-1
5
10 10 10
-1 0 1 2
Ι
125 ˚C
25 ˚C
-55 ˚C
55
