PD - 91318B IRFR/U1205 HEXFET(R) Power MOSFET l l l l l Ultra Low On-Resistance Surface Mount (IRFR1205) Straight Lead (IRFU1205) Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.027 G Description The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for throughhole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. ID = 44A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. D -P A K T O -252 A A I-P A K T O -25 1A A Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Max. Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Units 44 31 160 107 0.71 20 210 25 11 5.0 -55 to + 175 A W W/C V mJ A mJ V/ns C 300 (1.6mm from case ) Thermal Resistance Parameter RJC RJA RJA Junction-to-Case Junction-to-Ambient (PCB mount) ** Junction-to-Ambient www.irf.com Typ. Max. Units --- --- --- 1.4 50 110 C/W 1 5/11/98 http://store.iiic.cc/ IRFR/U1205 Electrical Characteristics @ TJ = 25C (unless otherwise specified) RDS(on) VGS(th) gfs Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current V(BR)DSS V(BR)DSS/TJ Qg Qgs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time LD Internal Drain Inductance LS Internal Source Inductance Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance IGSS Min. Typ. Max. Units Conditions 55 --- --- V V GS = 0V, ID = 250A --- 0.055 --- V/C Reference to 25C, ID = 1mA --- --- 0.027 VGS = 10V, ID = 26A 2.0 --- 4.0 V VDS = VGS, ID = 250A 17 --- --- S VDS = 25V, ID = 25A --- --- 25 VDS = 55V, VGS = 0V A --- --- 250 VDS = 44V, VGS = 0V, TJ = 150C --- --- 100 VGS = 20V nA --- --- -100 V GS = -20V --- --- 65 ID = 25A --- --- 12 nC VDS = 44V --- --- 27 VGS = 10V, See Fig. 6 and 13 --- 7.3 --- VDD = 28V --- 69 --- ID = 25A ns --- 47 --- RG = 12 --- 60 --- RD = 1.1, See Fig. 10 Between lead, --- 4.5 --- nH 6mm (0.25in.) G from package --- 7.5 --- and center of die contact --- 1300 --- VGS = 0V --- 410 --- pF VDS = 25V --- 150 --- = 1.0MHz, See Fig. 5 D S Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol --- --- 44 showing the A G integral reverse --- --- 160 p-n junction diode. S --- --- 1.3 V TJ = 25C, IS = 22A, VGS = 0V --- 65 98 ns TJ = 25C, I F =25A --- 160 240 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by Pulse width 300s; duty cycle 2%. max. junction temperature. ( See fig. 11 ) VDD = 25V, starting TJ = 25C, L = 470H RG = 25, IAS = 25A. (See Figure 12) Calculated continuous current based on maximum allowable junction temperature; Package limitation current = 20A This is applied for I-PAK, Ls of D-PAK is measured between lead and ISD 25A, di/dt 320A/s, VDD V(BR)DSS, center of die contact TJ 175C Uses IRFZ44N data and test conditions ** When mounted on 1" square PCB (FR-4 or G-10 Material ) . For recommended footprint and soldering techniques refer to application note #AN-994 2 www.irf.com http://store.iiic.cc/ IRFR/U1205 1000 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP I , Drain-to-S ource C urrent (A ) D I , D rain-to-Source Current (A ) D TOP 100 4.5V 10 20 s P U LS E W ID TH TC = 2 5C 1 0.1 1 10 A 100 4 .5 V 10 2 0 s P U L S E W ID TH T C = 17 5C 1 100 0.1 1 V D S , D rain-to-S ourc e V oltage (V ) Fig 2. Typical Output Characteristics 2.5 R D S (o n) , D rain-to-S ourc e O n R esis tanc e (N orm alize d) I D , D rain -to-S ourc e C urre nt (A) 1000 tion TJ = 2 5 C TJ = 1 7 5 C 10 V DS = 25V 2 0 s P U L S E W ID T H 1 4 5 6 7 8 9 A 100 V D S , D rain-to-S ourc e V oltage (V ) Fig 1. Typical Output Characteristics 100 10 10 A ID = 41A 2.0 1.5 1.0 0.5 V G S = 10V 0.0 V G S , G a te -to-S o u rce V o lta g e (V ) Fig 3. Typical Transfer Characteristics www.irf.com -60 -40 -20 0 20 40 60 80 100 120 140 160 180 T J , J unc tion T em pe rature (C ) Fig 4. Normalized On-Resistance Vs. Temperature 3 http://store.iiic.cc/ A IRFR/U1205 C , Capacitance (pF) 2000 C iss V GS C is s C rs s C o ss = = = = 20 0V , f = 1M H z C g s + C g d , Cd s S H O R T E D C gd C d s + C gd V G S , G ate-to-S ource V oltage (V ) 2500 I D = 25 A V D S = 44 V V D S = 28 V 16 1500 12 C oss 1000 C rss 500 0 10 4 FO R TE S T C IR C U IT S E E FIG U R E 1 3 0 A 1 8 100 0 V D S , D rain-to-S ourc e V oltage (V ) 20 30 40 50 60 A 70 Q G , T otal G ate C harge (nC ) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 O P E R A TIO N IN TH IS A R E A L IM ITE D B Y R D S (o n) I D , Drain C urrent (A ) I S D , Reverse D rain Current (A ) 10 100 T J = 1 75 C TJ = 25 C 10 VG S = 0 V 1 0.5 1.0 1.5 2.0 2.5 A 100 100 s 10 1m s 10m s T C = 25 C T J = 17 5C S ing le P u lse 1 1 3.0 10 100 V D S , D rain-to-S ource V oltage (V ) V S D , S ource-to-D rain V oltage (V ) Fig 7. Typical Source-Drain Diode Forward Voltage 10 s Fig 8. Maximum Safe Operating Area 4 www.irf.com http://store.iiic.cc/ A IRFR/U1205 50 VDS LIMITED BY PACKAGE VGS 40 RD D.U.T. I D , Drain Current (A) RG + -VDD 30 5.0V Pulse Width 1 s Duty Factor 0.1 % 20 Fig 10a. Switching Time Test Circuit 10 VDS 90% 0 25 50 75 100 125 150 175 TC , Case Temperature ( C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 10 1 D = 0.50 0.20 0.10 0.1 P DM 0.05 0.02 0.01 t1 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.01 0.00001 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 http://store.iiic.cc/ IRFR/U1205 1 5V L VD S D .U .T RG IA S 10V tp D R IV E R + V - DD A 0.0 1 Fig 12a. Unclamped Inductive Test Circuit E A S , S ingle P ulse A valanche E nergy (m J) 500 TO P B O TTO M 400 ID 10 A 1 8A 25 A 300 200 100 V D D = 25 V 0 25 V (B R )D SS 50 A 75 100 125 150 175 S tarting T J , J unc tion T em perature (C ) tp Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50K 12V QG .2F .3F 5.0 V QGS D.U.T. QGD + V - DS VGS VG 3mA IG Charge ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform 6 Fig 13b. Gate Charge Test Circuit www.irf.com http://store.iiic.cc/ IRFR/U1205 Peak Diode Recovery dv/dt Test Circuit + D.U.T Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer + - - + * * * * RG dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test Driver Gate Drive D= Period P.W. + - VDD P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS www.irf.com 7 http://store.iiic.cc/ IRFR/U1205 Package Outline TO-252AA Outline Dimensions are shown in millimeters (inches) 2 .3 8 (.0 9 4 ) 2 .1 9 (.0 8 6 ) 6 .7 3 (.2 6 5 ) 6 .3 5 (.2 5 0 ) 1 .1 4 (.0 4 5 ) 0 .8 9 (.0 3 5 ) -A 1 .2 7 (.0 5 0 ) 0 .8 8 (.0 3 5 ) 5 .4 6 (.2 1 5 ) 5 .2 1 (.2 0 5 ) 0 .5 8 (.0 2 3 ) 0 .4 6 (.0 1 8 ) 4 6 .4 5 (.2 4 5 ) 5 .6 8 (.2 2 4 ) 6 .2 2 (.2 4 5 ) 5 .9 7 (.2 3 5 ) 1 .0 2 (.0 4 0 ) 1 .6 4 (.0 2 5 ) 1 2 1 0 .4 2 (.4 1 0 ) 9 .4 0 (.3 7 0 ) 3 0 .5 1 (.0 2 0 ) M IN . -B 1 .5 2 (.0 6 0 ) 1 .1 5 (.0 4 5 ) 3X 1 .1 4 (.0 4 5 ) 2 X 0 .7 6 (.0 3 0 ) 0 .8 9 (.0 3 5 ) 0 .6 4 (.0 2 5 ) 0 .2 5 (.0 1 0 ) 2 .2 8 (.0 9 0 ) 4 .5 7 (.1 8 0 ) L E A D A S S IG N M E N T S 1 - GATE 2 - D R A IN 3 - SOURCE 4 - D R A IN 0 .5 8 (.0 2 3 ) 0 .4 6 (.0 1 8 ) M A M B N O TE S : 1 D IM E N S IO N IN G & T O L E R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 8 2 . 2 C O N T R O L L IN G D IM E N S IO N : IN C H . 3 C O N F O R M S T O J E D E C O U T L IN E T O -2 5 2 A A . 4 D IM E N S IO N S S H O W N A R E B E F O R E S O L D E R D IP , S O L D E R D IP M A X . + 0 .1 6 (.0 0 6 ). Part Marking Information TO-252AA (D-PARK) E XA M P L E : T H IS IS A N IR F R 1 2 0 W IT H A S S E M B L Y LOT COD E 9U1P IN T E R N A T IO N A L R E C T IF IE R LO GO A IR F R 120 9U ASS EMB LY LOT CODE 8 F IR S T P O R T IO N OF PART NUMBER 1P S E C O N D P O R TIO N OF PART NUMBER www.irf.com http://store.iiic.cc/ IRFR/U1205 Package Outline TO-251AA Outline Dimensions are shown in millimeters (inches) 6 .7 3 (.2 6 5 ) 6 .3 5 (.2 5 0 ) -A - 2 .3 8 (.0 9 4 ) 2 .1 9 (.0 8 6 ) 0 .5 8 (.0 2 3 ) 0 .4 6 (.0 1 8 ) 1 .2 7 (.0 5 0 ) 0 .8 8 (.0 3 5 ) 5 .4 6 (.2 1 5 ) 5 .2 1 (.2 0 5 ) L E A D A S S IG N M E N T S 1 - GATE 2 - D R A IN 3 - SOURCE 4 - D R A IN 4 6 .4 5 (.2 4 5 ) 5 .6 8 (.2 2 4 ) 6 .2 2 (.2 4 5 ) 5 .9 7 (.2 3 5 ) 1 .5 2 (.0 6 0 ) 1 .1 5 (.0 4 5 ) 1 2 3 -B 2 .2 8 (.0 9 0 ) 1 .9 1 (.0 7 5 ) 3X 1 .1 4 (.0 4 5 ) 0 .7 6 (.0 3 0 ) 2 .2 8 (.0 9 0 ) N O TE S : 1 D IM E N S IO N IN G & T O L E R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 8 2 . 2 C O N T R O L L IN G D IM E N S IO N : IN C H . 3 C O N F O R M S T O J E D E C O U T L IN E T O -2 5 2 A A . 4 D IM E N S IO N S S H O W N A R E B E F O R E S O L D E R D IP , S O L D E R D IP M A X . + 0 .1 6 (.0 0 6 ). 9 .6 5 (.3 8 0 ) 8 .8 9 (.3 5 0 ) 3X 1 .1 4 (.0 4 5 ) 0 .8 9 (.0 3 5 ) 0 .8 9 (.0 3 5 ) 0 .6 4 (.0 2 5 ) 0 .2 5 (.0 1 0 ) 2X M A M B 0 .5 8 (.0 2 3 ) 0 .4 6 (.0 1 8 ) Part Marking Information TO-251AA (I-PARK) E XA M P L E : TH IS IS A N IR F U 1 2 0 W IT H A S S E M B L Y LOT CODE 9U1P IN TE R N A T IO N A L R E C TIF IE R LO G O IR F U 12 0 9U AS SEMBLY LOT CODE www.irf.com F IR S T P O R TIO N OF PART NUMBER 1P S E C O N D P O R TIO N OF PART NUM BER 9 http://store.iiic.cc/ IRFR/U1205 Tape & Reel Information TO-252AA TR TRR 1 6.3 ( .641 ) 1 5.7 ( .619 ) 12 .1 ( .4 76 ) 11 .9 ( .4 69 ) F E E D D IR E C T IO N TR L 16.3 ( .64 1 ) 15.7 ( .61 9 ) 8 .1 ( .3 18 ) 7 .9 ( .3 12 ) F E E D D IR E C T IO N NO T ES : 1. C O N T R O LL IN G D IM E N S IO N : M ILLIM E T E R . 2. A LL D IM E N S IO N S A R E S H O W N IN M ILL IM E T E R S ( IN C H E S ). 3. O U T L IN E C O N F O R M S T O E IA -4 81 & E IA -54 1. 13 IN C H 16 m m NOTES : 1. O U T LIN E C O N F O R M S T O E IA -481 . WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T 3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: 171 (K&H Bldg.) 30-4 Nishi-ikebukuro 3-chome, Toshima-ku, Tokyo Japan Tel: 81 33 983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 16907 Tel: 65 221 8371 Data and specifications subject to change without notice. 5/98 10 www.irf.com http://store.iiic.cc/ Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ http://store.iiic.cc/