n-channel JFETs tons Z2 Siliconix &0 60 [ e { f Performance Curves NC ag esigne Of .ce See Section 5 2 S e = Analog Switches BENEFITS 8 [S] @ Low Insertion Loss and High Accuracy = Commutators in Test Systems a Choppers 'DS(on) < 25 Q (2N4856A, 59A) wn High Off-tsolation $ > e l < 250 pA Integrator Reset Switch D(off) p @ Short Sample and Hold Aperture Time | WON 5 Crss < 4 pF * ABSOLUTE MAXIMUM RATINGS (25C) High Speed Reverse Gate-Drain or Gate-Source Voltage, ton < 8 ns oO & 2N4856A-5BA. . 0. eee ween eeee -40 V == 60 Reverse Gate-Drain or Gate-Source Voltage, TO-18 > P 2N4859A-61A............005 vee eet eee -30V See Section 7 Gate Current...... 0.0.0. e cece eee ee tee eee 50 mA Total Device Dissipation at 25C Case Temperature (Derate 10 MW/C).. 2... ee eee 1.8W Storage Temperature Range ............ 65 to +200C Lead Temperature 6 (1/16 from case for 10 seconds) ............. 300C gc , s D *ELECTRICAL CHARACTERISTICS (25C unless otherwise noted) 2N4856A 2N4857A 2N4858A Characteristic 2N4859A 2N4860A 2N4861A Unit Test Conditions Min | Max Min | Max Min Max 1 Gate-Source Breakdown | 2N4856A-58A -40 40 40 BV v ig =-lHA,V =0 2 GSS Voltage QN4BS9A-61A -30 -30 ~30 Go ~1#A. Vos 3 2N4856A-58A 7280 a2 260 | PA Vas = -20v, 4 -500 -800 -500{ nA |VYos=9 150C sls loss Gate Reverse Current 50 "350 3501 pA 1 t 2N48594-61A Ves =-15 V. bla -500 ~500 -500] nA |Vps=9 150C 77 J 250 250 2501 PA |vpg = 15 V, 2 4 Ip(off) Drain Cutoff Current 500 500 ool na |Vos=-10V | asorc 9 VoSloft) Gate-Source Cutoff Voltage 4 -10 -2 6 | -08 4 v Vos = 15 V, 1p =0.5 nA 10 loss Saturation Drain Current (Note 1) 50 20 100 8 801 mA j|Vps = 15 V, Vgg.=9 i Vps{on) Drain-Source ON Voltage oo rad on lima Ves=O,lp=t ) 12 Fds(on) Drain-Source ON Resistance 25 40 60] 2 180 9, f= 1 kHz Qo 13] ] Ciss Common-Source Input Capacitance 10 10 10 N Common-Source Reverse Transfer pF Vos = f=1 MHz 14 Crs Capaci 4 35 35 Vas =-10V apacitance 5 6 8 ns 15}$ 1 tdion) Turn-ON Delay Time (20) {10} (5) | {mA} w {-10] (-6] [-4] | Iv] , 3 4 af ns [yoo vow 464 9, 2N4B56A, 59A 16le| tr Rise Time (20) (10) (5) | (may |/GSlon) Ry = 1953 2, 2NABS7A, BOA H [-10} 6) tal | Iv} lon) a 1910 , 2N4B5BA, 61A i Gsiorf = (1 N 20 40 80] as 17] | tof Turn-OFF Time (20) (10) (5) | (ma) (-10] [-6] [4] | [v1 Nc *JEDEC registered data. Voo Hy) p, = DD-Vosion) = NOTE: L iDton) INPUT PULSE SAMPLING SCOPE 0 1. Pulse test required, pulsewidth = 100 us, duty cycle < 10%. Vin Di Your RISE TIME 0.25 ns RISE TIME 0.75 ns Rg | FALL TIME 0.75 ns INPUT RESISTANCE 1M 0 502 PULSE WIOTH 100 ns tNPUT CAPACITANCE 2.5 pF 3 = = PULSE DUTY CYCLE < 10% x 1979 Siliconix incorporated 3-29