VN2222 Series
CORPORATION
SPECIFICATIONSaLIMITS
SYMBOL PARAMETER TYPbMIN MAX UNIT TEST CONDITIONS
STATIC
V(BR)DSS Drain-Source Breakdown Voltage 70 60 VID = 100µA, VGS = 0V
VGS(th) Gate-Th resho ld Vol tage 2.3 0.6 2.5 VDS = VGS, ID = 1mA
IGSS Gate-Body Le akag e ±100 nA VGS = ±20V, VDS = 0V
IDSS Zero Gate Vol tage Drain Curren t 10 µAVDS = 48V, VGS = 0V
500 TJ = 125oC
ID(ON) On-State Drain Currentc1000 750 mA VDS = 10V, VGS = 10V
rDS(ON) Drain-Source On-Resistancec57.5
Ω
VGS = 5V, ID = 0.2A
2.5 7.5 VGS = 10V, ID = 0.5A
4.4 13.5 TJ = 125oC
gFS Forward Transconduct ancec230 100 mS VDS = 10V, ID = 0.5A
gOS Common Source Output Conductancec1200 µSV
DS = 10V, ID = 0.2A
DYNAMIC
Ciss Input Capacitance 16 60
pF VDS = 25V, VGS = 0V, f = 1MHz
Coss Output Capacitance 11 25
Crss Reverse Transfer Capacitance 2 5
SWITCHING
tON Turn-On Time 7 10 ns
VDD = 15V, RL = 23Ω, ID = 0.6A
VGEN = 10V, RG = 25Ω
tOFF Turn-Off Time 7 10 (Switching time is essentially independent of
operating tem p era ture )
Notes:
a. TA = 25oC unless otherwis e not ed.
b. For design aid only, not subject to production testing.
c. Pulse test; PW = ≤300µS, dut y cycle ≤2%.