Copyright 2002 Semicoa Semiconductors, Inc.
Rev. D 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 1 of 2
www.SEMICOA.com
2N5153L
Silicon PNP Transisto
r
Data Sheet
Description
Semicoa Semiconductors offers:
• Screening and processing per MIL-PRF-19500 Appendix E
• JAN level (2N5153LJ)
• JANTX level (2N5153LJX)
• JANTXV level (2N5153LJV)
• JANS level (2N5153LJS)
• QCI to the applicable level
• 100% die visual inspection per MIL-STD-750 method
2072 for JANTXV and JANS
• Radiation testing (total dose) upon request
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
Applications
• High-speed power switching
• Low power
• PNP silicon transistor
Features
• Hermetically sealed TO-5 metal can
• Also available in chip configuration
• Chip geometry 9702
• Reference document:
MIL-PRF-19500/545
Benefits
• Qualification Levels: JAN, JANTX,
JANTXV and JANS
• Radiation testing available
Absolute Maximum Ratings TC = 25°C unless otherwise specified
Parameter Symbol Rating Unit
Collector-Emitter Voltage VCEO 80
Volts
Collector-Base Voltage VCBO 100
Volts
Emitter-Base Voltage VEBO 5.5
Volts
Collector Current, Continuous IC 2
A
Power Dissipation, TA = 25OC
Derate linearly above 25OC PT 1
5.7
W
mW/°C
Power Dissipation, TC = 25OC
Derate linearly above 25OC PT 11.8
66.7
W
mW/°C
Thermal Resistance RθJA
RθJC
175
15 °C/W
Operating Junction Temperature
Storage Temperature
TJ
TSTG
-65 to +200
-65 to +200 °C
Copyright 2002 Semicoa Semiconductors, Inc.
Rev. D 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 2 of 2
www.SEMICOA.com
2N5153L
Silicon PNP Transisto
r
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at TA = 25°C
Off Characteristics
Parameter Symbol Test Conditions Min Typ Max Units
Collector-Emitter Breakdown Voltage V(BR)CEO I
C = 100 mA 80 Volts
Collector-Emitter Cutoff Current ICES1 V
CE = 60 Volts 1 µA
Collector-Emitter Cutoff Current ICES2 V
CE = 100 Volts 1 mA
Collector-Emitter Cutoff Current ICEO V
CE = 40 Volts 50 µA
Collector-Emitter Cutoff Current ICEX VCE = 60 Volts, VEB = 2 Volts,
TA = 150°C 500
nA
Emitter-Base Cutoff Current IEBO1 V
EB = 4 Volts 1 µA
Emitter-Base Cutoff Current IEBO1 V
EB = 5.5 Volts 1 mA
On Characteristics Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%
Parameter Symbol Test Conditions Min Typ Max Units
DC Current Gain
hFE1
hFE2
hFE3
hFE4
IC = 50 mA, VCE = 5 Volts
IC = 2.5 A, VCE = 5 Volts
IC = 5 A, VCE = 5 Volts
IC = 2.5 A, VCE = 5 Volts
TA = -55°C
50
70
40
25
200
Base-Emitter Voltage VBE V
CE = 5 Volts, IC = 2.5 mA 1.45 Volts
Base-Emitter Saturation Voltage VBEsat1
VBEsat2
IC = 2.5 A, IB = 250 mA
IC = 5 A, IB = 500 mA
1.45
2.20 Volts
Collector-Emitter Saturation Voltage VCEsat1
VCEsat2
IC = 2.5 A, IB = 250 mA
IC = 5 A, IB = 500 mA
0.75
1.50 Volts
Dynamic Characteristics
Parameter Symbol Test Conditions Min Typ Max Units
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio |hFE| VCE = 5 Volts, IC = 500 mA,
f = 10 MHz 7
Small Signal Short Circuit Forward
Current Transfer Ratio hFE VCE = 5 Volts, IC = 100 mA,
f = 1 kHz 50
Open Circuit Output Capacitance COBO VCB = 10 Volts, IE = 0 mA,
f = 1 MHz 250
pF
Switching Characteristics
Saturated Turn-On Time
Storage Time
Fall Time
Saturated Turn-Off Time
tON
ts
tf
tOFF
IC = 5 A, IB1= 500 mA,
IB2= -500 mA, VBEoff = 3.7 V,
RL = 6 Ω
0.5
1.4
0.5
1.5
µs
µs
µs
µs
