SOT23 SILICON HIGH CURRENT
SCHOTTKY BARRIER DIODE “SuperBAT”
ISSUE 1- September 1997 ✪
FEATURES:
•Low VF
•High Current Capability
APPLICATIONS:
•DC - DC converters
•Mobile telecomms
•PCMCIA
PARTMARK DETAIL: ZS5
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Continuous Reverse Voltage VR40 V
Forward Current (Continuous) IF500 mA
Forward Voltage @ IF =500mA V
F550 mV
Average Peak Forward Current; D.C. = 50% IFAV 1000 mA
Non Repetitive Forward Current t≤100µs
t≤10ms
IFSM 6.75
3A
A
Power Dissipation at Tamb
=25°C P
tot 330 mW
Storage Temperature Range Tstg -55 to + 150 ° C
Junction Temperature Tj125 ° C
ELECTRICAL CHARACTERISTICS (at Tamb = 25° C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Reverse Breakdown
Voltage V(BR)R 40 60 V IR= 200µA
Forward Voltage VF270
300
370
465
550
640
810
440
300
350
460
550
670
780
1050
mV
mV
mV
mV
mV
mV
mV
mV
IF= 50mA*
IF= 100mA*
IF= 250mA*
IF= 500mA*
IF= 750mA*
IF= 1000mA*
IF= 1500mA*
IF= 500mA, Tamb
=100°C*
Reverse Current IR15 40 µAVR=30V
Diode Capacitance CD20 pF f= 1MHz,VR= 25V
Reverse Recovery
Time trr 10 ns switched from
IF = 500mA to IR = 500mA
Measured at IR = 50mA
*Measured under pulsed conditions. Pulse width= 300µs; duty cycle ≤2%.
ZHCS500
1
3
C
1
A
3
2
SOT23