©2004 Fairchild Semiconductor Corporation Rev. A, April 2004
MMBTH10RG
Absolute Maximum Ratings*
T
a
=25°C unless otherwise noted
* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These rating are based on a maximum junction temperature of 150 degrees C.
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
T
a
=25°C unless otherwise noted
* Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Thermal Charac t eris ti cs
T
a
=25°C unless otherwise noted
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Symbol Parameter Ratings Units
V
CEO
Collector-Emitter Voltage 40 V
V
CBO
Collector-Base V oltage 40 V
V
EBO
Emitter-Base Voltage 4.0 V
I
C
Collector Current - Continuous 50 mA
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 ~ 150 °C
Symbol Parameter Test Condition Min. Max. Units
Off Characteristics
V
(BR)CEO
Collector-Emitter Sust aining Voltage * I
C
= 1.0 mA, I
B
= 0 40 V
V
(BR)CBO
Collector-Base Breakdown Voltage I
C
= 10 µA, I
E
= 0 40 V
V
(BR)EBO
Emitter-Base Breakdown Voltage I
E
= 1.0 µA, I
C
= 0 4.0 V
I
CBO
Collector Cutoff Current V
CB
= 30 V, I
E
= 0 100 nA
On Characteristics
h
FE
DC Current Gain I
C
= 1.0 mA, V
CE
= 6.0 V 50 120 V
V
CE(sat)
Collector-Emitter Saturation Voltage I
C
= 10 mA, I
B
= 5.0 mA 0.2 V
Small Signal Characteristics
f
T
Current Gain - Bandwidth Product I
C
= 2.0 mA, V
CE
= 10 V,
f = 100 MHz 450 MHz
C
cb
Collector-Base Capacitance V
CB
= 10 V, I
E
= 0, f = 1.0 MHz 0.6 pF
rb’Cc Collector Base Time Constant I
C
= 5.0 mA, V
CB
= 10 V,
f = 79.8 MHz 12 pS
Symbol Parameter Max. Units
P
D
Total Device Dissipation
Derate above 25°C225
1.8 mW
mW/°C
R
θJA
Thermal Resistance, Junction to Ambient 556 °C/W
MMBTH10RG
NPN RF Transistor
• This device is designed for use in low noise UHF/VHF amplifiers, with
collector currents in the 100 µA to 20 mA range in common emitter or
common base mode of operations, and in low frequency drift, high
output UHF oscillators.
• Sourced from process 42. SOT-23
B
E
C
Mark: 3E
1. Base 2. Emitter 3. Collector
Package Dimensions
MMBTH10RG
Dimensions in Millimeters
Rev. A, April 2004©2004 Fairchild Semiconductor Corporation
0.96~1.14
0.12
0.03~0.10
0.38 REF
0.40 ±0.03
2.90 ±0.10
0.95 ±0.03 0.95 ±0.03
1.90 ±0.03 0.508REF
0.97REF 1.30 ±0.10 0.45~0.60
2.40 ±0.10
+0.05
–0.023
0.20 MIN
0.40 ±0.03
SOT-23
©2004 Fairchild Semiconductor Corporation Rev. I10
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devic es or systems
which, (a) are inten ded for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructi ons for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete Not In Production This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
FACT Quiet Series™
FAST
®
FASTr™
FPS™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
I
2
C™
i-Lo™
ImpliedDisconnect™
ISOPLANAR™
LittleFET™
MICROCOUPLER™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
MSXPro™
OCX™
OCXPro™
OPTOLOGIC
®
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerSaver™
PowerTrench
®
QFET
®
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
SILENT SWITCHER
®
SMART START™
SPM™
Stealth™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic
®
TINYOPTO™
TruTranslation™
UHC™
UltraFET
®
VCX™
ACEx™
ActiveArray™
Bottomless™
CoolFET™
CROSSVOLT™
DOME™
EcoSPARK™
E
2
CMOS™
EnSigna™
FACT™
Across the board. Around the world.™
The Power Franchise
®
Programmab le Acti ve Droo p™
