IRGS4B60KTRRPBF - International Rectifier

INSULATED GATE BIPOLAR TRANSISTOR

11/18/04

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IRGB4B60KPbF

IRGS4B60KPbF

IRGSL4B60KPbF

VCES = 600V

IC = 6.8A, TC=100°C

tsc > 10µs, TJ=150°C

VCE(on) typ. = 2.1V

Features

• Low VCE (on) Non Punch Through IGBT Technology.

• 10µs Short Circuit Capability.

• Square RBSOA.

• Positive VCE (on) Temperature Coefficient.

• Maximum Junction Temperature rated at 175°C.

• Lead-Free.

Benefits

• Benchmark Efficiency for Motor Control.

• Rugged Transient Performance.

• Low EMI.

• Excellent Current Sharing in Parallel Operation.

D2Pak

IRGS4B60KPbF TO-262

IRGSL4B60KPbF

TO-220

IRGB4B60KPbF

n-channel

Absolute Maximum Ratings

Parameter Max. Units

CES

Collec to r-to- Emi tt er Volt age 600 V

@ T

= 25 °C Cont inuo us Col lecto r Current 12

@ T

= 100°C Continuous Collector Current 6.8 A

Pulse Collector Current (Ref.Fig.C.T.5) 24

Cla m ped Indu c tiv e Load cu r r en t

Gate-to-Emitter Voltage ±20 V

@ T

= 25 °C Maximum Power Dissipation 63 W

@ T

= 100°C Maximum Power Dissipation 31

Operating Junction and -55 to +175

STG

Storage Temperature Range °C

So ldering Tem peratu r e, for 10 se c. 300 ( 0.06 3 i n . ( 1.6m m ) fr o m ca se)

Thermal / Mechanical Characteristics

Parameter Min. Typ. Max. Units

RθJC Junction-to-Case- IGBT ––– ––– 2.4 °C/W

RθCS Case-to-Sin k, fl at, grease d surface ––– 0.50 –––

RθJA Junction-to-Ambient ––– ––– 62

RθJA Junction-to-Ambient (PCB Mount, steady state)

––– ––– 40

Wt Weight ––– 1.44 ––– g

PD - 95643A

IRGB/S/SL4B60KPbF

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Note  to  are on page 16

Electrical Characteristics @ T

= 25°C (unless otherwise specified)

P arameter M in. Typ. Ma x. U nits C on d itions Ref.Fig.

V(BR)CES Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 500µA

∆V(BR)CES/∆TJ

Tempera ture C o eff. o f Br ea kdo w n V o ltage

—0.28—V/°C

VGE = 0V , IC = 1mA (25°C-150°C)

—2.12.5 IC = 4.0A, V GE = 15V, TJ = 25°C 5,6,7

VCE(on) Collector-to- Emitte r Voltage — 2.5 2 .8 V IC = 4.0 A, VGE = 15V, TJ = 150°C 9,10,11

—2.62.8 IC = 4.0A, V GE = 15V, TJ = 175°C

VGE(th) G ate T h r esh o l d Vo l ta g e 3 .5 4. 5 5 . 5 V VCE = V GE, IC = 250µA 9,10,11

∆

VGE(th)/

∆

TJThreshold Voltage temp. coefficient — -8.1 —

mV/°C

VCE = V GE, IC = 1mA (25°C-150°C) 12

gfe Forward Transconductance — 1.7 — S VCE = 5 0V, IC = 4.0A, PW = 80µs

—1.0150 VGE = 0V , VCE = 600V

ICES Zero Gate Voltage Collector Current — 54 300 µA VGE = 0V , VCE = 600V, TJ = 150°C

—300800 VGE = 0V , VCE = 600V, TJ = 175°C

IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V

S w itching C ha rac teristic s @ T

= 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions Ref.Fig.

QgTotal Gate Ch ar ge (turn-on) — 12 — IC = 4.0A 23

Qge Gate-to-Emitter Charge (turn-on) — 1.7 — nC VCC = 400V CT1

Qgc Gate-to-Collector Charge (turn-on) — 6.5 — VGE = 15V

Eon Tu rn -On S w itch ing Lo ss — 73 80

IC = 4.0 A, V CC = 400V CT4

Eoff Tu rn -Off Sw itch ing L os s — 47 53 µ J VGE = 15V , RG = 100Ω, L = 2.5mH

Etot T o tal S w i tc hin g L oss — 120 1 3 0 TJ = 25°C

td(on) Turn -On de lay tim e — 22 28

IC = 4.0 A, V CC = 400V

trRise time — 18 23 ns VGE = 15 V, RG = 100Ω, L = 2.5mH CT4

td(off) Turn-Off delay time — 100 110 TJ = 25°C

tfF a ll t ime — 66 8 0

Eon Turn-On Switching Loss — 130 150 IC = 4.0 A, V CC = 400V CT4

Eoff Turn -Off S witching Loss — 83 140 µJ VGE = 15 V, RG = 100Ω, L = 2.5mH 13,15

Etot To tal S w i tc hing L o s s — 220 2 8 0 TJ = 150°C

WF1,WF

td(on) Turn -On de lay tim e — 22 27

IC = 4.0 A, V CC = 400V 14,16

trRise time — 18 22 ns VGE = 15 V, RG = 100Ω, L = 2.5mH CT4

td(off) Turn-Off delay time — 120 130 TJ = 150°C WF1

tfF a ll t ime — 79 8 9 WF2

Cies In p ut C ap ac it a nc e — 190 — VGE = 0V

Coes Output Capacitance — 25 — pF VCC = 30V 22

Cres Reverse Transfer Capacitance — 6.2 — f = 1.0MHz

RBSOA Reverse Bias Sa fe Oper ating Area FULL SQUARE TJ = 150°C, IC = 24A, Vp = 600V 4

VCC=500V,VGE = +1 5V to 0V ,R G = 100Ω CT2

SCSOA Short Circuit Safe Operating Area 10 — — µs TJ = 150°C, Vp = 600V, RG = 100Ω CT3

VCC=360V,VGE = +1 5V to 0V WF3

IRGB/S/SL4B60KPbF

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Fig. 1 - Maximum DC Collector Current vs.

Case Temperature Fig. 2 - Power Dissipation vs. Case

Temperature

Fig. 3 - Forward SOA

TC = 25°C; TJ ≤ 150°C Fig. 4 - Reverse Bias SOA

TJ = 150°C; VGE =15V

0 20 40 60 80 100 120 140 160 180

TC (°C)

Ptot (W)

0 20 40 60 80 100 120 140 160 180

TC (°C)

IC (A)

10 100 1000

VCE (V)

100

IC A)

0 1 10 100 1000 10000

VCE (V)

0.01

0.1

100

IC (A)

10ms

1ms

100µs

IRGB/S/SL4B60KPbF

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Fig. 7 - Typ. IGBT Output Characteristics

TJ = 150°C; tp = 80µs

Fig. 6 - Typ. IGBT Output Characteristics

TJ = 25°C; tp = 80µs

Fig. 5 - Typ. IGBT Output Characteristics

TJ = -40°C; tp = 80µs

0246810 12

VCE (V)

ICE (A)

VGE = 18V

VGE = 15V

VGE = 12V

VGE = 10V

VGE = 8.0V

0246810 12

VCE (V)

ICE (A)

VGE = 18V

VGE = 15V

VGE = 12V

VGE = 10V

VGE = 8.0V

0246810 12

VCE (V)

ICE (A)

VGE = 18V

VGE = 15V

VGE = 12V

VGE = 10V

VGE = 8.0V

IRGB/S/SL4B60KPbF

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Fig. 9 - Typical VCE vs. VGE

TJ = 25°C

Fig. 8 - Typical VCE vs. VGE

TJ = -40°C

Fig. 11 - Typ. Transfer Characteristics

VCE = 360V; tp = 10µs

Fig. 10 - Typical VCE vs. VGE

TJ = 150°C

5 101520

VGE (V)

VCE (V)

ICE = 2. 0A

ICE = 4.0A

ICE = 8.0A

5 101520

VGE (V)

VCE (V)

ICE = 2. 0A

ICE = 4.0A

ICE = 8.0A

5101520

VGE (V)

VCE (V)

ICE = 2. 0A

ICE = 4. 0A

ICE = 8. 0A

0 5 10 15 20

VGS, G ate-to- Source Voltage (V )

ID, Drain-to-Source Current (Α)

TJ = 25°C

TJ = 150°C

IRGB/S/SL4B60KPbF

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Fig. 13 - Typ. Switching Time vs. I C

TJ = 150°C; L=2.5mH; VCE= 400V

RG= 100Ω; VGE= 15V

Fig. 12 - Typ. Energy Loss vs. IC

TJ = 150°C; L=2.5mH; V CE= 400V,

RG= 100Ω; VGE= 15V

Fig. 15 - Typ. Switching Time vs. R G

TJ = 150°C; L=2.5mH; VCE= 400V

ICE= 4.0A; VGE= 15V

Fig. 14 - Typ. Energy Loss vs. RG

TJ = 150°C; L=2.5mH; VCE= 400V

ICE= 4.0A; VGE= 15V

12345678910

IC (A)

100

150

200

250

300

350

Energy (µJ)

EOFF

EON

0100 200 300 400 500

RG (Ω)

100

150

200

250

300

350

Energy (µJ)

EON

EOFF

0246810

IC (A)

100

1000

Swiching Time (ns)

tdOFF

tdON

0100 200 300 400 500

RG (Ω)

100

1000

Swiching Time (ns)

tdOFF

tdON

IRGB/S/SL4B60KPbF

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Fig. 16 - Typ. Capacitance vs. VCE

VGE= 0V; f = 1MHz Fig. 17 - Typical Gate Charge vs. VGE

ICE = 4.0A; L = 3150µH

02468101214

Q G, Total Gate Charge (nC)

VGE (V)

300V

400V

020 40 60 80 100

VCE (V)

100

1000

Capacitance (pF)

Cies

Coes

Cres

Fig 18. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)

1E-006 1E-005 0.0001 0.001 0.01 0.1 1

t1 , Rectangular Pul s e Durati on (sec)

0.001

0.01

0.1

Thermal Response ( Z thJC )

0.20

0.10

D = 0.50

0.02

0.01

0.05

SINGLE PULSE

( THERMAL RESPONSE ) Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

Ri (°C/W) τi (sec)

0.0429 0.000001

1.3417 0.000178

1.0154 0.000627

τJ

τ1

τ1τ2

τ2τ3

τ3

R1R2

R2R3

Ci= i/Ri

Ci= τi/Ri

IRGB/S/SL4B60KPbF

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Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit

VCC

DUT

Fig.C.T.3 - S.C.SOA Circuit Fig.C.T.4 - Switching Loss Circuit

Fig.C.T.5 - Resistive Load Circuit

VCC

diode cl amp /

DUT

DUT /

DRIVER

- 5V

VCC

DUT

R =

80 V DUT

480V

Driver

DUT

360V

IRGB/S/SL4B60KPbF

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Fig. WF3- Typ. S.C Waveform

@ T C = 150°C using Fig. CT.3

Fig. WF1- Typ. Turn-off Loss Waveform

@ TJ = 150°C using Fig. CT.4 Fig. WF2- Typ. Turn-on Loss Waveform

@ TJ = 150°C using Fig. CT.4

-100

100

200

300

400

500

600

700

0.4 0.6 0.8 1 1.2

Ti me (uS)

Vce (V)

-2

Ice (A)

Eoff Loss

90% Ice

5% Vce

5% Ice

Vce

Ice

-100

100

200

300

400

500

600

700

0.35 0.45 0.55 0.65

Ti me (uS)

Vce (V)

-2

Ice (A)

Eon

Loss

90% I ce

10% Ice

5% Vce

Vce

Ice

-50

100

150

200

250

300

350

400

30 40 50 60 70

Time (uS)

-5

I (A)

Vce

Ice

ICE (A)

VCE (V)

IRGB/S/SL4B60KPbF

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TO-220AB Part Marking Information

EXAMPLE:

IN THE ASSEMBLY LIN E "C"

THIS IS AN IRF1010

LOT CODE 1789

ASSEMBLED ON WW 19, 1997 PART NUMBE

AS S EMBLY

LOT CODE

DATE CODE

YEAR 7 = 1997

LINE C

WEEK 1 9

LOGO

RECTIFIER

INTERNATIONAL

Note: "P" in assembly line

position indicates "Lead- Free"

TO-220AB Package Outline

Dimensions are shown in millimeters (inches)

IRGB/S/SL4B60KPbF

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D2Pak Part Marking Information

D2Pak Package Outline

Dimensions are shown in millimeters (inches)

Note: "P" in assembly line

pos ition indicates "Lead-F ree"

F530S

THIS IS AN IRF530S WITH

LOT CODE 8024

ASSEMBLED ON WW 02, 2000

IN THE ASSEMBLY LINE "L"

ASSEMBLY

LOT CODE

INTERNATIONAL

RECTIFIER

LOGO

PART NUMBER

DATE CODE

YEAR 0 = 2000

WEEK 02

LINE L

F530S

A = ASSEMBLY SITE CODE

WEEK 02

P = DES IGNATE S LE AD-F R EE

PRODUCT (OPTIONAL)

RECTIFIER

INTERNATIONAL

LOGO

LOT CODE

AS S EMB LY YEAR 0 = 2000

DATE CODE

PART NUMBER

IRGB/S/SL4B60KPbF

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TO-262 Part Marking Information

TO-262 Package Outline

Dimensions are shown in millimeters (inches)

AS S EMBLY

LOT COD E

RECTIFIER

INTERNATIONAL

AS SEMBLED ON WW 19 , 1997

Note: "P" in assembly li ne

p o s ition ind icates "L ead-Free "

IN T HE ASS EMBLY LINE "C" LOGO

THIS IS AN IRL310 3L

LOT CODE 1789

EXAMPLE:

LI NE C

DATE CODE

WEEK 19

YEAR 7 = 1997

PART NUMBER

PAR T NU MBER

LOGO

LOT CODE

AS S EMB LY

INTERNATIONAL

RECTIFIER

PRODUCT (OP TIONAL)

P = DES IGNAT ES LEAD-FREE

A = AS S E MBL Y S ITE CODE

WEEK 19

Y EAR 7 = 1 997

DATE CODE

IRGB/S/SL4B60KPbF

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IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information. 11/04

Data and specifications subject to change without notice.

This product has been designed and qualified for Industrial market.

Qualification Standards can be found on IR’s Web site.

TO-220AB package is not recommended for Surface Mount Application.

Notes:

 VCC = 80% (VCES), VGE = 20V, L = 100µH, RG = 50Ω.

 When mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques

refer to application note #AN-994.

 Energy losses include "tail" and diode reverse recovery, using Diode FD059H06A5.

D2Pak Tape & Reel Information

Dimensions are shown in millimeters (inches)

TRR

EED DIRECTIO N

1.85 (.073)

1.65 (.065)

1.60 (.063)

1.50 (.059)

4.10 (.161)

3.90 (.153)

TRL

EED DIRECTION

10.90 (.429)

10.70 (.421) 16.10 (.634)

15.90 (.626)

1.75 (.069)

1.25 (.049)

11.60 (.457)

11.40 (.449) 15.42 (.609)

15.22 (.601)

4.72 (.136)

4.52 (.178)

24.30 (.957

)

23.90 (.941

)

0.368 (.0145)

0.342 (.0135)

1.60 (.063)

1.50 (.059)

13.50 (.532)

12.80 (.504)

330.00

(14.173)

MAX.

27.40 (1. 079)

23.90 (.9 41)

60.00 (2.362

)

MIN.

30.40 (1 .19 7)

MAX.

26.40 (1.039)

24.40 (.961)

NOTES :

1. C OMF OR M S T O EIA- 418.

2. CONTROLLING DIMENSION: MILLIMETER.

3. DIMENSION MEASURED @ HUB.

4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.

Note: For the most current drawings please refer to the IR website at:

http://www.irf.com/package/