ELECTRICA L CHARACTERI STICS (V S = 6V; Tamb = 25°C, unless otherwise specified.
STEREO (Test circuit of fig. 1).
Symbol Parameter Test Condition Min. Typ. Max. Unit
VSSupply Voltage 1.8 15 V
IdTotal Quiescent Drain Current 15 mA
VOQuiescent Output Voltage 2.7 V
VS = 3V 1.2 V
IbInput Bias Current 100 nA
POOutput Power (each channel)
(f = 1KHz, d = 10%) VS = 9V
VS = 6V
RL = 32Ω VS = 4.5V
VS = 3V
VS = 2V
300
120
60
20
5
mW
RL = 16Ω VS = 6V 170 220 mW
RL = 8Ω VS = 6V 300 380 mW
RL = 4Ω VS = 4.5V
VS = 3V 320
110 mW
mW
d Distortion RL = 32Ω PO = 40mW 0.2 %
RL = 16Ω PO = 75mW 0.2 %
RL = 8Ω PO = 150mW 0.2 %
GVClosed Loop Voltage Gain f = 1KHz 36 39 41 dB
∆GVChannel Balance ±1dB
R
iInput Resistance f = 1KHz 100 KΩ
eNTotal Input Noise Rs = 10kΩ B = Curve A 2 µV
Rs = 10kΩ B = 22Hz to 22KHz 2.5 µV
SVR Supply Voltage Rejection f = 100Hz C1 = C2 = 100µF24 30 dB
C
sChannel Separation f = 1KHz 50 dB
BRIDGE (Test circuit of fig.2)
VSSupply Voltage 1.8 15 V
IdTotal Quiescent Drain Current RL = ∞15 mA
Vos Output Offset Voltage (between
the outputs) RL = 8Ω ±80 mV
IbInput Bias Current 100 nA
POOutput Power
(f = 1KHz, d = 10%) VS = 9V
VS = 6V
RL = 32Ω VS = 4.5V
VS = 3V
VS = 2V
320
50
1000
400
200
65
8
mW
RL = 16Ω VS = 6V
RL = 16W VS = 3V 800
120 mW
mW
RL = 8Ω VS = 4.5V
RL = 8W VS = 3V 700
220 mW
mW
RL = 4Ω VS = 3V
RL = 4W VS = 2V 350
80 mW
mW
d Distortion RL = 8Ω PO = 0.5W f = 1KHz 0.2 %
GVClosed Loop Voltage Gain f = 1KHz 39 dB
RiInput Resistance f = 1KHz 100 KΩ
eNTotal Input Noise Rs = 10kΩ B = Curve A 2.5 µV
Rs = 10kΩ B = 22Hz to 22KHz 3 µV
SVR Supply Voltage Rejection f = 100Hz 40 dB
B Power Bandwidth (-3dB) RL = 8Ω PO = 1W 120 KHz
TDA2822D
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