DATA SH EET
Product specification
Supersedes data of 1997 Jun 16 1999 Apr 08
DISCRETE SEMICONDUCTORS
BCV61
NPN general purpose double
transistor
M3D071
1999 Apr 08 2
Philips Semiconductors Product specification
NPN general purpose double transistor BCV61
FEATURES
•Low current (max. 100 mA)
•Low voltage (max. 30 V)
•Matched pairs.
APPLICATIONS
•For use in applications where the working point must be
independent of temperature
•Current mirrors.
DESCRIPTION
NPN double transistor in a SOT143B plastic package.
PNP complement: BCV62.
MARKING
TYPE
NUMBER MARKING
CODE TYPE
NUMBER MARKING
CODE
BCV61 1Mp BCV61B 1Kp
BCV61A 1Jp BCV61C 1Lp
PINNING
PIN DESCRIPTION
1 collector TR2; base TR1 and TR2
2 collector TR1
3 emitter TR1
4 emitter TR2
Fig.1 Simplified outline (SOT143B) and symbol.
handbook, halfpage
4
12
3
MAM293
Top view
21
34
TR1 TR2
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage TR1 open emitter −30 V
VCEO collector-emitter voltage TR1 open base −30 V
VEBS emitter-base voltage VCE =0 −6V
I
Ccollector current (DC) −100 mA
ICM peak collector current −200 mA
IBM peak base current TR1 −200 mA
Ptot total power dissipation Tamb ≤25 °C; note 1 −250 mW
Tstg storage temperature −65 +150 °C
Tjjunction temperature −150 °C
Tamb operating ambient temperature −65 +150 °C
1999 Apr 08 3
Philips Semiconductors Product specification
NPN general purpose double transistor BCV61
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tj=25°C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-a thermal resistance from junction to ambient note 1 500 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Transistor TR1
ICBO collector cut-off current IE= 0; VCB =30V −−15 nA
IE= 0; VCB =30V; T
j= 150 °C−−5µA
I
EBO emitter cut-off current IC= 0; VEB =5V −−100 nA
hFE DC current gain IC= 100 µA; VCE = 5 V 100 −−
I
C
= 2 mA; VCE =5V 110 −800
VCEsat collector-emitter saturation
voltage IC= 10 mA; IB= 0.5 mA −90 250 mV
IC= 100 mA; IB=5mA −200 600 mV
VBEsat base-emitter saturation
voltage IC= 10 mA; IB= 0.5 mA; note 1 −700 −mV
IC= 100 mA; IB= 5 mA; note 1 −900 −mV
VBE base-emitter voltage IC= 2 mA; VCE = 5 V; note 2 580 660 700 mV
IC= 10 mA; VCE = 5 V; note 2 −−770 mV
Cccollector capacitance IE=i
e= 0; VCB =10V; f=1MHz −2.5 −pF
fTtransition frequency IC= 10 mA; VCE = 5 V; f = 100 MHz 100 −−MHz
F noise figure IC= 200 µA; VCE =5V; R
S=2kΩ;
f = 1 kHz; B = 200 Hz −−10 dB
Transistor TR2
VEBS base-emitter forward voltage VCB = 0; IE=−250 mA −−−1.8 V
VCB = 0; IE=−10 µA−400 −−mV
hFE DC current gain IC= 2 mA; VCE =5V
BCV61A 110 −220
BCV61B 200 −450
BCV61C 420 −800
1999 Apr 08 4
Philips Semiconductors Product specification
NPN general purpose double transistor BCV61
Notes
1. Decreasing 1.7 mV/°C with increasing temperature.
2. Decreasing 2 mV/°C with increasing temperature.
3. Device, without emitter resistors, mounted on an FR4 printed-circuit board.
Transistors TR1 and TR2
current matching of
transistors TR1 and TR2 IE2 =−0.5 mA; VCE1 =5V;
T
amb ≤25 °C0.7 −1.3
IE2 =−0.5 mA; VCE1 =5V;
T
amb ≤150 °C0.7 −1.3
IE2 emitter current for thermal
stability of IC1
VCE1 = 5 V; note 3; (see Fig.2) −−−5mA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
IC1
IE2
-------
Fig.2 Test circuit current matching.
VCE1 = 5 V; device, without emitter resistors, mounted on an
FR4 printed-circuit board.
Voltage drop at contacts: VCO 2
3
---
<UT^
=16 mV
handbook, halfpage
MBK078
A
VCO
IC1
VCO
34
TR2 IE2 = constantVCE1 TR1
21
Fig.3 BCV61 with emitter resistors.
handbook, halfpage
MBK079
A
IC1
34
TR2 IE2 = constant
RERE
VCE1 TR1
21
1999 Apr 08 5
Philips Semiconductors Product specification
NPN general purpose double transistor BCV61
Fig.4 Maximum collector-emitter voltage as a function of emitter resistance.
handbook, full pagewidth
0
30
10
20
MBK082
10−11
VCE1max
(V)
10 RE (Ω)102
IE2 =
1 mA
5 mA
10 mA
50 mA
(see Fig.3).
IC1
IE2
-------- 1.3=
1999 Apr 08 6
Philips Semiconductors Product specification
NPN general purpose double transistor BCV61
PACKAGE OUTLINE
UNIT A
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
mm 1.1
0.9
A1
max
0.1
b1
0.88
0.78
c
0.15
0.09
D
3.0
2.8
E
1.4
1.2
HEywvQ
2.5
2.1 0.45
0.15 0.55
0.45
e
1.9
e1
1.7
Lp
0.1 0.10.2
bp
0.48
0.38
DIMENSIONS (mm are the original dimensions)
SOT143B 97-02-28
0 1 2 mm
scale
Plastic surface mounted package; 4 leads SOT143B
D
HE
EA
B
vMA
X
A
A1
Lp
Q
detail X
c
y
wM
e1
e
B
21
34
b1
bp
1999 Apr 08 7
Philips Semiconductors Product specification
NPN general purpose double transistor BCV61
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
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Printed in The Netherlands 115002/00/03/pp8 Date of release: 1999 Apr 08 Document order number: 9397 750 05554
