IXYS reserves the right to change limits, test conditions, and dimensions.
IXFH44N50P IXFK 44N50P
IXFT 44N50P
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
gfs VDS= 20 V; ID = 0.5 ID25, pulse test 20 32 S
Ciss 5440 pF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 639 pF
Crss 40 pF
td(on) 28 ns
trVGS = 10 V, VDS = 0.5 VDSS, ID = ID25 29 ns
td(off) RG = 3 Ω (External) 85 ns
tf27 ns
Qg(on) 98 nC
Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 35 nC
Qgd 30 nC
RthJC 0.19°C/W
RthCS (TO-247) 0.21 °C/W
(TO-264) 0.15 °C/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions Min. Typ. Max.
ISVGS = 0 V 44 A
ISM Repetitive 110 A
VSD IF = IS, VGS = 0 V, 1.5 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
trr IF = 25 A, -di/dt = 100 A/µs 200 ns
QRM VR = 100V, VGS = 0 V 0.6 µC
IRM 6.0 A
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2
TO-247 (IXFH) Outline
Terminals: 1 - Gate 2 - Drain
3 - Source Tab - Drain
1 2 3
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A12.2 2.54 .087 .102
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b11.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
TO-264 (IXFK) Outline
TO-268 (IXFT) Outline
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