INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
IRGP4072DPbF
PD - 97317
1www.irf.com
04/16/08
E
G
n-channel
C
VCES = 300V
IC = 40A, TC = 100°C
VCE(on) typ. = 1.46V
Features
• Low VCE (ON) Trench IGBT Technology
• Low switching losses
• Maximum Junction temperature 150 °C
• Square RBSOA
• 100% of the parts tested for clamped inductive load
• Ultra fast soft Recovery Co-Pak Diode
• Tight parameter distribution
• Lead Free Package
Benefits
• High Efficiency in a wide range of applications
• Suitable for a wide range of switching frequencies due to
Low VCE (ON) and Low Switching losses
• Rugged transient Performance for increased reliability
• Low EMI
GC E
Gate Collector Emitter
GCE
TO-247AC
C
Applications
• Uninterruptible Power Supplies
• Battery operated vehicles
• Welding
• Solar converters and inverters
Absolute Maximum Ratings
Parameter Max. Units
V
CES
Collector-to-Emitter Voltage 300 V
I
C
@ T
C
= 25°C Continuous Collector Current 70
I
C
@ T
C
= 100°C Continuous Collector Current 40
I
CM
Pulse Collector Current 120
I
LM
Clamped Inductive Load Current
c
120 A
I
F
@ T
C
= 25°C Diode Continous Forward Current 70
I
F
@ T
C
= 100°C Diode Continous Forward Current 40
I
FM
Diode Maximum Forward Current
e
120
V
GE
Continuous Gate-to-Emitter Voltage ±20 V
Transient Gate-to-Emitter Voltage ±30
P
D
@ T
C
= 25°C Maximum Power Dissipation 180 W
P
D
@ T
C
= 100°C Maximum Power Dissipation 71
T
J
Operating Junction and -55 to +150
T
STG
Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter Min. Typ. Max. Units
R
θJC
(IGBT) Thermal Resistance Junction-to-Case-(each IGBT) ––– ––– 0.70 °C/W
R
θJC
(Diode) Thermal Resistance Junction-to-Case-(each Diode) ––– ––– 0.87
R
θCS
Thermal Resistance, Case-to-Sink (flat, greased surface) ––– 0.24 –––
R
θJA
Thermal Resistance, Junction-to-Ambient (typical socket mount) ––– 80 –––
IRGP4072DPbF
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Notes:
VCC = 80% (VCES), VGE = 15V, L = 200µH, RG = 10Ω.
This is only applied to TO-247AC package.
Pulse width limited by max. junction temperature.
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Ref.Fig
V
(BR)CES
Collector-to-Emitter Breakdown Voltage 300 — — V V
GE
= 0V, I
C
= 1.0mA
∆V
(BR)CES
/∆T
J
Temperature Coeff. of Breakdown Voltage —0.20—V/°C
V
GE
= 0V, I
C
= 1mA (25°C-150°C)
V
CE(on)
Collector-to-Emitter Saturation Voltage — 1.46 1.70 V I
C
= 40A, V
GE
= 15V, T
J
= 25°C 5,6,7
—1.59— I
C
= 40A, V
GE
= 15V, T
J
= 150°C 9,10,11
V
GE(th)
Gate Threshold Voltage 2.6 — 5.0 V V
CE
= V
GE
, I
C
= 500µA 9, 10,
∆V
GE(th)
/∆TJ Threshold Voltage temp. coefficient — -13 — mV/°C V
CE
= V
GE
, I
C
= 1.0mA (25°C - 150°C) 11, 12
gfe Forward Transconductance — 28 — S V
CE
= 25V, I
C
= 40A
I
CES
Collector-to-Emitter Leakage Current — 1.0 25 µA V
GE
= 0V, V
CE
= 300V
—450— V
GE
= 0V, V
CE
= 300V, T
J
= 150°C
V
FM
Diode Forward Voltage Drop — 2.26 2.69 V I
F
= 40A 8
—1.53— I
F
= 40A, T
J
= 150°C
I
GES
Gate-to-Emitter Leakage Current — — ±100 nA V
GE
= ±30V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
Ref.Fig
Q
g
Total Gate Charge (turn-on) — 73 110 I
C
= 40A 23
Q
ge
Gate-to-Emitter Charge (turn-on) — 13 20 nC V
GE
= 15V CT1
Q
gc
Gate-to-Collector Charge (turn-on) — 26 39 V
CC
= 240V
E
on
Turn-On Switching Loss — 409 525 I
C
= 40A, V
CC
= 240V, V
GE
= 15V CT3
E
off
Turn-Off Switching Loss — 838 1017 µJ R
G
= 10Ω, L = 200µH, T
J
= 25°C
E
total
Total Switching Loss — 1247 1542 Energy losses include tail & diode reverse recovery
t
d(on)
Turn-On delay time — 18 23 I
C
= 40A, V
CC
= 240V, V
GE
= 15V CT3
t
r
Rise time — 36 50 ns R
G
= 10Ω, L = 200µH, T
J
= 25°C
t
d(off)
Turn-Off delay time — 144 121
t
f
Fall time — 95 124
E
on
Turn-On Switching Loss — 713 — I
C
= 40A, V
CC
= 240V, V
GE
=15V 13, 15
E
off
Turn-Off Switching Loss — 1076 — µJ R
G
=10Ω, L=200µH, T
J
= 150°C CT3
E
total
Total Switching Loss — 1789 — Energy losses include tail & diode reverse recovery WF1, WF2
t
d(on)
Turn-On delay time — 16 — I
C
= 40A, V
CC
= 240V, V
GE
= 15V 14, 16
t
r
Rise time — 39 — ns R
G
= 10Ω, L = 200µH CT3
t
d(off)
Turn-Off delay time — 176 — T
J
= 150°C WF1
t
f
Fall time — 133 — WF2
C
ies
Input Capacitance — 2265 — pF V
GE
= 0V 22
C
oes
Output Capacitance — 190 — V
CC
= 30V
C
res
Reverse Transfer Capacitance — 58 — f = 1.0Mhz
T
J
= 150°C, I
C
= 120A 4
RBSOA Reverse Bias Safe Operating Area FULL SQUARE V
CC
= 240V, Vp =300V CT2
Rg = 10Ω, V
GE
= +15V to 0V
Erec Reverse Recovery Energy of the Diode — 909 — µJ T
J
= 150°C 17, 18, 19
t
rr
Diode Reverse Recovery Time — 122 — ns V
CC
= 240V, I
F
= 40A 20, 21
I
rr
Peak Reverse Recovery Current — 36 — A V
GE
= 15V, Rg = 10Ω, L =200µH, L
s
= 150nH
WF3
Conditions
IRGP4072DPbF
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Fig. 1 - Maximum DC Collector Current vs.
Case Temperature
Fig. 2 - Power Dissipation vs. Case
Temperature
Fig. 3 - Forward SOA
TC = 25°C, TJ ≤ 150°C; VGE =15V
Fig. 4 - Reverse Bias SOA
TJ = 150°C; VGE =15V
Fig. 5 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 60µs
Fig. 6 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 60µs
0 25 50 75 100 125 150
TC (°C)
0
25
50
75
100
125
150
175
200
Ptot (W)
10 100 1000
VCE (V)
1
10
100
1000
IC (A)
0246810
VCE (V)
0
20
40
60
80
100
120
140
160
180
200
ICE (A)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
0246810
VCE (V)
0
20
40
60
80
100
120
140
160
180
200
ICE (A)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
25 50 75 100 125 150
TC (°C)
0
10
20
30
40
50
60
70
80
IC (A)
1 10 100 1000
VCE (V)
1
10
100
1000
IC (A)
1msec
10µsec
100µsec
TC = 25°C
TJ = 150°C
Single Pulse
IRGP4072DPbF
4www.irf.com
Fig. 7 - Typ. IGBT Output Characteristics
TJ = 150°C; tp = 60µs
Fig. 8 - Typ. Diode Forward Characteristics
tp = 60µs
Fig. 10 - Typical VCE vs. VGE
TJ = 25°C
Fig. 11 - Typical VCE vs. VGE
TJ = 150°C
Fig. 12 - Typ. Transfer Characteristics
VCE = 50V; tp = 10µs
Fig. 9 - Typical VCE vs. VGE
TJ = -40°C
0246810
VCE (V)
0
20
40
60
80
100
120
140
160
180
200
ICE (A)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
0.0 1.0 2.0 3.0 4.0
VF (V)
0
20
40
60
80
100
IF (A)
-40°c
25°C
150°C
5 101520
VGE (V)
0
2
4
6
8
10
12
14
16
18
20
VCE (V)
ICE = 20A
ICE = 40A
ICE = 80A
5 101520
VGE (V)
0
2
4
6
8
10
12
14
16
18
20
VCE (V)
ICE = 20A
ICE = 40A
ICE = 80A
5 101520
VGE (V)
0
2
4
6
8
10
12
14
16
18
20
VCE (V)
ICE = 20A
ICE = 40A
ICE = 80A
0 5 10 15
VGE (V)
0
20
40
60
80
100
120
140
160
180
200
ICE (A)
TJ = 25°C
TJ = 150°C
IRGP4072DPbF
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Fig. 13 - Typ. Energy Loss vs. IC
TJ = 150°C; L = 200µH; VCE = 240V, RG = 10Ω; VGE = 15V
Fig. 14 - Typ. Switching Time vs. IC
TJ = 150°C; L = 200µH; VCE = 240V, RG = 10Ω; VGE = 15V
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 150°C; L = 200µH; VCE = 240V, ICE = 40A; VGE = 15V
Fig. 16 - Typ. Switching Time vs. RG
TJ = 150°C; L = 200µH; VCE = 240V, ICE = 40A; VGE = 15V
Fig. 17 - Typ. Diode IRR vs. IF
TJ = 150°C
Fig. 18 - Typ. Diode IRR vs. RG
TJ = 150°C
0 25 50 75 100 125
Rg (Ω)
500
1000
1500
2000
2500
Energy (µJ)
EOFF
EON
025 50 75 100 125
RG (Ω)
10
100
1000
Swiching Time (ns)
tR
tdOFF
tF
tdON
020 40 60 80
IF (A)
15
20
25
30
35
40
IRR (A)
RG = 10Ω
RG = 22Ω
RG = 47Ω
RG = 100Ω
025 50 75 100
RG (Ω)
20
25
30
35
40
IRR (A)
0 1020304050607080
IC (A)
0
500
1000
1500
2000
2500
3000
Energy (µJ)
EOFF
E
ON
010 20 30 40 50 60 70 80
IC (A)
10
100
1000
Swiching Time (ns)
tR
tdOFF
tF
tdON
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Fig. 19 - Typ. Diode IRR vs. diF/dt
VCC = 240V; VGE = 15V; IF = 40A; TJ = 150°C
Fig. 20 - Typ. Diode QRR vs. diF/dt
VCC = 240V; VGE = 15V; TJ = 150°C
Fig. 23 - Typical Gate Charge vs. VGE
ICE = 40A; L = 100µH
Fig. 21 - Typ. Diode ERR vs. IF
TJ = 150°C
300 400 500 600 700 800
diF /dt (A/µs)
20
25
30
35
40
IRR (A)
300 400 500 600 700 800
diF /dt (A/µs)
1000
1200
1400
1600
1800
2000
2200
2400
2600
QRR (µC)
10Ω
22Ω
100Ω
47Ω
40A
20A
80A
20 30 40 50 60 70 80
IF (A)
0
200
400
600
800
1000
1200
Energy (µJ)
RG = 10Ω
RG = 22Ω
RG = 47Ω
RG = 100Ω
0 255075
Q G, Total Gate Charge (nC)
0
2
4
6
8
10
12
14
16
VGE, Gate-to-Emitter Voltage (V)
VCES
= 150V
VCES
= 240V
Fig. 22 - Typ. Capacitance vs. VCE
VGE= 0V; f = 1MHz
050 100 150 200
VCE (V)
10
100
1000
10000
Capacitance (pF)
Cies
Coes
Cres
IRGP4072DPbF
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Fig. 25. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
Fig 24. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
Thermal Response ( Z thJC )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE ) Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
τJ
τJ
τ1
τ1
τ2
τ2τ3
τ3
R1
R1R2
R2R3
R3
Ci i/Ri
Ci= τi/Ri
τ
τC
τ4
τ4
R4
R4Ri (°C/W) τi (sec)
0.01788 0.00001
0.12215 0.000108
0.33816 0.001262
0.22196 0.007931
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)
0.0001
0.001
0.01
0.1
1
10
Thermal Response ( Z thJC )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE ) Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Ri (°C/W) τi (sec)
0.2758 0.000776
0.3708 0.002206
0.2252 0.013373
τJ
τJ
τ1
τ1
τ2
τ2τ3
τ3
R1
R1R2
R2R3
R3
τ
τC
Ci i/Ri
Ci= τi/Ri
IRGP4072DPbF
8www.irf.com
1K
VC C
DUT
0
L
L
Rg
80 V DUT
480V
Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit
L
Rg
VCC
diode clamp /
DUT
DU T /
DRIVER
- 5V
Fig.C.T.3 - Switching Loss Circuit
Rg
VCC
DUT
R =
V
CC
I
CM
Fig.C.T.4 - Resistive Load Circuit
IRGP4072DPbF
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Fig. WF1 - Typ. Turn-off Loss Waveform
@ TJ = 150°C using Fig. CT.3
Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 150°C using Fig. CT.3
-100
0
100
200
300
400
-0.35 0.15 0.65
time(µs)
V
CE
(V)
-20
0
20
40
60
80
I
CE
(A)
90% I
CE
5% V
CE
5% I
CE
Eoff Loss
tf
-100
0
100
200
300
400
-0.4 -0.3 -0.2 -0.1 0.0 0.1 0.2
time (µs)
V
CE
(V)
-30
0
30
60
90
120
I
CE
(A)
TEST CURRENT
90% test
current
5% V
CE
10% test
current
tr
Eon
Fig. WF3 - Typ. Diode Recovery Waveform
@ TJ = 150°C using Fig. CT.3
-400
-350
-300
-250
-200
-150
-100
-50
0
50
100
-1.00 0.00 1.00 2.00 3.00
time (µS)
V
F
(V)
-50
-40
-30
-20
-10
0
10
20
30
40
50
I
F
(A)
Peak
IRR
t
RR
Q
RR
10%
Peak
IRR
IRGP4072DPbF
10 www.irf.com
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 04/08
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial market.
Qualification Standards can be found on IR’s Web site.
TO-247AC Part Marking Information
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
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Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
TO-247AC package is not recommended for Surface Mount Application.