PROFET(R) BTS 6163 D Smart Highside Power Switch Reversave Product Summary Operating voltage On-state resistance Nominal current Load current (ISO) Current limitation Package * Reverse battery protection by self turn on of power MOSFET Features * Short circuit protection with latch * Current limitation * Overload protection * Thermal shutdown with restart * Overvoltage protection (including load dump) * Loss of ground protection * Loss of Vbb protection (with external diode for charged inductive loads) * Very low standby current * Fast demagnetization of inductive loads * Electrostatic discharge (ESD) protection * Optimized static electromagnetic compatibility (EMC) * Green Product (RoHS compliant) * AEC qualified Vbb(on) 5.5 ... 62 RON IL(nom) IL(ISO) IL12(SC) V 20 m 5.5 A 17 A 70 A PG-TO252-5-11 (DPAK 5 pin; less than half the size as TO 220 SMD) Diagnostic Function * Proportional load current sense (with defined fault signal in case of overload operation, overtemperature shutdown and/or short circuit shutdown) Application * Power switch with current sense diagnostic feedback for 42V and 24 V DC grounded loads * All types of resistive, inductive and capacitive loads * Replaces electromechanical relays, fuses and discrete circuits General Description N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load current sense, integrated in Smart SIPMOS chip on chip technology. Providing embedded protective functions. 3 & Tab R Voltage source Voltage sensor Overvoltage Current Gate protection limit protection Charge pump Level shifter Rectifier 2 IN Logic ESD I IN Limit for unclamped ind. loads Output Voltage detection + V bb bb OUT 1, 5 IL Current Sense Load Temperature sensor IS PROFET I IS Load GND 4 VIN V IS R IS Logic GND Data Sheet 1 of 18 http://store.iiic.cc/ Rev. 1.0, 2007-07-23 PROFET(R) BTS 6163 D Pin Symbol Function 1 OUT O Output; output to the load; pin 1 and 5 must be externally shorted* . 2 IN I Input; activates the power switch if shorted to ground. Tab/(3) Vbb + Supply Voltage; positive power supply voltage; tab and pin3 are internally shorted. 4 IS S Sense Output; Diagnostic feedback; provides at normal operation a sense current proportional to the load current; in case of overload, overtemperature and/or short circuit a defined current is provided (see Truth Table on page 8) 5 OUT O Output; output to the load; pin 1 and 5 must be externally shorted* . *) Not shorting all outputs will considerably increase the on-state resistance, reduce the peak current capability and decrease the current sense accuracy Maximum Ratings at Tj = 25 C unless otherwise specified Parameter Supply voltage (overvoltage protection see page 4) Supply voltage for full short circuit protection 1) Load dump protection VLoadDump = UA + Vs, UA = 24 V RI= 2 , RL= 4.4 , td= 400 ms, IN= low or high Load current (Short-circuit current, see page 5) Operating temperature range Storage temperature range Power dissipation (DC) Inductive load switch-off energy dissipation, 3) single pulse IL = 20 A, Vbb= 24V Tj=150 C: Electrostatic discharge capability (ESD) (Human Body Model) acc. ESD assn. std. S5.1-1993; R=1.5k; C=100pF Current through input pin (DC) Current through current sense pin (DC) Symbol Vbb Vbb VLoad dump 2) Values IL Tj Tstg Ptot self-limited -40 ...+150 -55 ...+150 59 A C EAS 0.25 J 3.0 kV +15, -120 +15, -120 mA self-limited 20 V/s VESD IIN IIS 62 48 70 Unit V V V W see internal circuit diagrams page 9 Input voltage slew rate Vbb 16V : dVbIN / dt Vbb > 16V 4): 1) 2) 3) 4) Short circuit is defined as a combination of remaining resistances and inductances. See schematic on page11. VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 See also diagram on page 11. See also on page 8. Slew rate limitation can be achieved by means of using a series resistor RIN in the input path. This resistor is also required for reverse operation. See also page 10. Data Sheet 2 of 18 http://store.iiic.cc/ Rev. 1.0, 2007-07-23 PROFET(R) BTS 6163 D Thermal Characteristics Parameter and Conditions Symbol chip - case: RthJC junction - ambient (free air): RthJA SMD version, device on PCB 6): Thermal resistance min ---- Values Unit typ max -1.1 K/W 80 -45 55 Electrical Characteristics Parameter and Conditions Symbol at Tj= 25, Vbb = 24 V unless otherwise specified Values min typ max Unit Load Switching Capabilities and Characteristics On-state resistance (pin 3 to pin 1,5) VIN= 0, Vbb= 5.5V, IL = 7.5 A Tj=25 C: RON Tj=150 C: Tj=25 C: Tj=150 C: Output voltage drop limitation at small load currents (Tab to pin 1,5) 5) Tj=-40...150 C: Nominal load current (Tab to pin 1,5) ISO Proposal: VON 0.5 V, TC = 85C, Tj 150C SMD 6), VON 0.5 V, TA = 85C, Tj 150C Turn-on time to 90% VOUT: Turn-off time to 10% VOUT: RL = 3.9 , Tj=-40...150 C Slew rate on 25 to 50% VOUT, RL = 3.9 , Tj=-40...150 C Slew rate off 50 to 25% VOUT, RL = 3.9 , Tj=-40...150 C --- 19 38 25 50 ---- 16 32 40 20 40 65 17 5.5 --- 21.5 6.5 150 200 --300 550 dV /dton -- 0.65 1.0 V/s -dV/dtoff -- 0.65 1.2 V/s VIN= 0, Vbb= 12..24V, IL = 7.5 A VON(NL) IL(ISO) IL(nom) ton toff m mV 5) See figure 7a on page 15. 6) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70m thick) copper area for Vbb connection. PCB is vertical without blown air. Data Sheet 3 of 18 http://store.iiic.cc/ A s Rev. 1.0, 2007-07-23 PROFET(R) BTS 6163 D Parameter and Conditions Symbol at Tj= 25, Vbb = 24 V unless otherwise specified min. Operating Parameters Operating voltage (VIN=0) Tj=-40...150 C: Vbb(on) Undervoltage shutdown 7) 8) VbIN(u) Undervoltage restart of charge pump Vbb(ucp) Overvoltage protection 9) Ibb=15 mA Standby current IIN=0 Values typ. Unit max. 5.5 --- -2.5 4 62 3.5 5.5 V V V VZ,IN 68 73 -- V Tj=-40...+120C: Ibb(off) Tj=150C: --- 3 6 6 14 A -- -- 16 V --- 19 35 25 44 m --- 18 33 23 40 -- 100 150 --- 700 300 --- mV -- 1 -- ms Reverse Battery Reverse battery voltage 10) -Vbb On-state resistance (pin 1,5 to pin 3) Vbb= - 8V, VIN= 0, IL = -7.5 A, RIS = 1 k, 8) Tj=25 C: RON(rev) Tj=150 C: Vbb= -12..-24V, VIN= 0, IL = -7.5 A, RIS = 1 k, Tj=25 C: Tj=150 C: Integrated resistor in Vbb line Rbb Inverse Operation 11) Output voltage drop (pin 1,5 to pin 3) 8) Tj=25 C: -VON(inv) IL = -7.5 A, RIS = 1 k, IL = -7.5 A, RIS = 1 k, Tj=150 C: Turn-on delay after inverse operation; IL > 0A 8) VIN(inv) = VIN(fwd) = 0 V td(inv) 7) VbIN=Vbb-VIN see diagram page 14. Not subject to production test, specified by design. 9) See also VON(CL) in circuit diagram page 9. 10) For operation at voltages higher then |16V| please see required schematic on page 10. 11) Permanent Inverse operation results eventually in a current flow via the intrinsic diode of the power DMOS. In this case the device switches on with a time delay td(inv)) after the transition from inverse to forward mode. 8) Data Sheet 4 of 18 http://store.iiic.cc/ Rev. 1.0, 2007-07-23 PROFET(R) BTS 6163 D Parameter and Conditions Symbol at Tj= 25, Vbb = 24 V unless otherwise specified Values min. Protection Functions 12) Short circuit current limit (Tab to pin 1,5) 13) Short circuit current limit at VON = 6V14) Tj =-40C: Tj =25C: Tj =+150C: Short circuit current limit at VON = 12V 14) Tj =-40C: Tj =25C: Tj =+150C: Short circuit current limit at VON = 18V 14) Tj =-40C: Tj =25C: =+150C: Tj Short circuit current limit at VON = 24V Tj =-40C: tm=170s Tj =25C: =+150C: Tj Short circuit current limit at VON = 30V Tj =-40C: tm=170s Tj =25C: Tj =+150C: Short circuit current limit at VON = 45V 14) Tj =-40C: Tj =25C: Tj =+150C: Short circuit shutdown detection voltage (pin 3 to pins 1,5) Short circuit shutdown delay after input current positive slope, VON > VON(SC), Tj = -40...+150C IL6(SC) max. --50 --40 --30 --25 --20 --15 90 80 65 80 70 55 55 50 48 45 40 35 30 30 30 22 22 22 110 --100 --80 --60 --50 --35 --- A VON(SC) 2.5 3.5 4.5 V td(SC1) 350 650 1200 s td(SC2) -- 2 -- s VON(CL) 63 67 -- V 150 -- 175 10 --- C K IL12(SC) IL18(SC) IL24(SC) IL30(SC) IL45(SC) min. value valid only if input "off-signal" time exceeds 30 s Short circuit shutdown delay during on condition13) VON > VON(SC) Output clamp (inductive load switch off) 15) at VOUT = Vbb - VON(CL) (e.g. overvoltage) IL= 40 mA Thermal overload trip temperature Thermal hysteresis typ. Unit Tjt Tjt A A A A A Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation. 13) Short circuit current limit for max. duration of t d(SC1) , prior to shutdown, see also figures 3.x on page 13. 14) Not subject to production test, specified by design. 15) See also figure 2b on page 12. 12) Data Sheet 5 of 18 http://store.iiic.cc/ Rev. 1.0, 2007-07-23 PROFET(R) BTS 6163 D Parameter and Conditions Symbol at Tj= 25, Vbb = 24 V unless otherwise specified Values min. Diagnostic Characteristics Current sense ratio, static on-condition kILIS = IL : IIS, IIS < IIS,lim 16), VIS <VOUT - 5 V, VbIN > 4.5 V kILIS typ. Unit max. -- 9000 -- 8300 9000 10000 8200 9000 9800 8100 8800 9500 8200 8900 10000 8100 8900 9800 8000 8700 9500 7200 8900 11000 7500 8900 10600 7700 8700 10000 5000 9500 16000 6000 10000 15000 7500 10500 13000 IL = 30A, Tj = -40C: Tj = +25C: Tj = +150C: IL = 7.5A, Tj = -40C: Tj = +25C: Tj = +150C: IL = 2.5A, Tj = -40C: Tj = +25C: Tj = +150C: IL = 0.5A, Tj = -40C: Tj = +25C: Tj = +150C: IIN = 0 (e.g. during deenergizing of inductive loads): -- 0 -- Sense current under fault conditions 17) VON>1V, typ Tj = -40...+150C: IIS,fault 4.0 5.2 7.5 mA Tj = -40...+150C: IIS,lim 4.0 6.0 7.5 mA 350 650 1200 s Sense current saturation VON<1V, typ Fault-Sense signal delay after input current positive tdelay(fault) slope, VON >1V, Tj = -40...+150C Current sense leakage current, IIN = 0 IIS(LL) -- 0.1 0.5 A Current sense offset current, VIN = 0, IL 0 Current sense settling time to IIS static after input current positive slope, 18) 20 A, Tj= -40...+150C IL = 0 Current sense settling time during on condition, 18) IL = 10 20 A, Tj= -40...+150C Overvoltage protection Ibb = 15 mA Tj = -40...+150C: IIS(LH) -- 1.0 2.0 A tson(IS) -- 250 500 s tslc(IS) -- 50 100 s VZ,IS 68 73 -- V 16) See also figures 4.x and 6.x on page 13 and 14. Fault conditions are overload during on (i.e. VON>1V typ.), overtemperature and short circuit; see also truth table on page 8. 18) Not subject to production test, specified by design. 17) Data Sheet 6 of 18 http://store.iiic.cc/ Rev. 1.0, 2007-07-23 PROFET(R) BTS 6163 D Parameter and Conditions Symbol at Tj= 25, Vbb = 24 V unless otherwise specified min. Input Required current capability of input switch IIN(on) Tj =-40..+150C: Input current for turn-off Tj =-40..+150C: IIN(off) Data Sheet Values 7 of 18 http://store.iiic.cc/ typ. Unit max. -- 1.6 2.4 mA -- -- 30 A Rev. 1.0, 2007-07-23 PROFET(R) BTS 6163 D Truth Table Input Current level L H L H L H L H L H L H Normal operation Overload 19) Short circuit to GND 20) Overtemperature Short circuit to Vbb Open load L = "Low" Level, H = "High" Level Output level L H L H L L L L H H Z H Current Sense IIS 0 (IIS(LL)) nominal 0 (IIS(LL)) IIS,fault 0 (IIS(LL)) IIS,fault 0 (IIS(LL)) IIS,fault 0 (IIS(LL)) <nominal 21) 0 (IIS(LL)) 0 (IIS(LH)) Z = high impedance, potential depends on external circuit Terms I bb 3 VbIN VON Vbb IL V 2 bb OUT IN PROFET RIN V IN I IN 1,5 IS VbIS 4 I IS DS VIS VOUT R IS Two or more devices can easily be connected in parallel to increase load current capability. 19) Overload is detected at the following condition: 1V (typ.) < VON < 3.5V (typ.). See also page 11. Short Circuit is detected at the following condition: VON > 3.5V (typ.). See also page 11. 21) Low ohmic short to V may reduce the output current I and therefore also the sense current I . bb L IS 20) Data Sheet 8 of 18 http://store.iiic.cc/ Rev. 1.0, 2007-07-23 PROFET(R) BTS 6163 D Input circuit (ESD protection) Inductive and overvoltage output clamp + Vbb V bb VZ1 R bb ZD V V Z,IN V bIN IN ON OUT I PROFET IN VON is clamped to VON(Cl) = 67 V typ V IN Overvoltage protection of logic part ESD-Zener diode: 73 V typ.., max 15 mA; + Vbb Current sense output R IN Vbb Rbb ZD R bb V Z,IN V Z,IS Normal operation IN Logic V OUT V Z,IS IIS,fault PROFET IS IS R IIS V R IS IS R V V Z,VIS Signal GND IS VZ,IS = 73 V (typ.), RIS = 1 k nominal (or 1 k /n, if n devices are connected in parallel). IS = IL/kilis can be only driven by the internal circuit as long as Vout - VIS > 5V. Therefore RIS should be less than Rbb = 100 typ., VZ,IN = VZ,IS = 73 V typ., RIS = 1 k nominal. Note that when overvoltage exceeds 73 V typ. a voltage above 5V can occur between IS and GND, if RV, VZ,VIS are not used. Vbb - 5V . 7.5mA Note: For large values of RIS the voltage VIS can reach almost Vbb. See also overvoltage protection. If you don't use the current sense output in your application, you can leave it open. Data Sheet 9 of 18 http://store.iiic.cc/ Rev. 1.0, 2007-07-23 PROFET(R) BTS 6163 D Reversave (Reverse battery protection) - V bb R Vbb disconnect with energised inductive load Provide a current path with load current capability by using a diode, a Z-diode, or a varistor. (VZL+VD<63 V if RIN = 0). For higher clamp voltages currents at IN and IS have to be limited to 120 mA. bb IN Version a: OUT R IN Power Transistor Logic V bb V IN bb PROFET OUT RL D IS R IS Signal GND VD Power GND RIS typ. 1 k. Add RIN for reverse battery protection in applications with Vbb above 16V; recommended value: V ZL 0.08 A 1 1 + = RIN RIS | Vbb | -12V To minimise power dissipation at reverse battery operation, the overall current into the IN and IS pin should be about 80mA. The current can be provided by using a small signal diode D in parallel to the input switch, by using a MOSFET input switch or by proper adjusting the current through RIS. Since the current via Rbb generates additional heat in the device, this has to be taken into account in the overall thermal consideration. Inverse load current operation Vbb V bb - IL IN + PROFET V OUT + IS - OUT IIS V IN V IS R IS - The device can be operated in inverse load current mode (VOUT > Vbb > 0V). The current sense feature is not available during this kind of operation (IIS = 0). In case of inverse operation the intrinsic drain source diode is eventually conducting resulting in considerably increased power dissipation. The transition from inverse to forward mode can result in a delayed switch on. Note: Temperature protection during inverse load current operation is not possible! Data Sheet 10 of 18 http://store.iiic.cc/ Rev. 1.0, 2007-07-23 PROFET(R) BTS 6163 D Short circuit detection Fault Condition: VON > VON(SC) (3.5 V typ.) and t> td(SC) (typ.650 s). Inductive load switch-off energy dissipation E bb E AS Overload detection Fault Condition: VON > 1 V typ. V i L(t) V bb + V bb IN VO N PROFET OUT IS I OUT IN detection circuit Logic unit ELoad bb ZL RIS L { RL EL ER Energy stored in load inductance: 2 EL = 1/2*L*I L Short circuit While demagnetizing load inductance, the energy dissipated in PROFET is Short circuit is a combination of primary and secondary impedance's and a resistance's. EAS= Ebb + EL - ER= VON(CL)*iL(t) dt, with an approximate solution for RL > 0 : V 5uH bb OUT EAS= L SC IN ln (1+ |V IL*RL OUT(CL)| ) PROFET 10mOhm IS I IL* L (V + |VOUT(CL)|) 2*RL bb Maximum allowable load inductance for a single switch off R SC L = f (IL ); Tj,start = 150C, Vbb = 24 V, RL = 0 IN SC V bb Z L 1000 L [m H ] Allowable combinations of minimum, secondary resistance for full protection at given secondary inductance and supply voltage for single short circuit event: [uH] 15 L SC V bb : 32V 36V 100 10 40V 48V 10 1 5 0 ,1 R SC 0 0 100 200 300 [mOhm] 0 ,0 1 1 Data Sheet 11 of 18 http://store.iiic.cc/ 10 I_ L [A ] 1 0 0 Rev. 1.0, 2007-07-23 PROFET(R) BTS 6163 D Timing diagrams Figure 2a: Switching motors and lamps: Figure 1a: Switching a resistive load, change of load current in on-condition: IIN IIN VOUT 90% t on dV/dton IIL t off 10% IL VOUT dV/dtoff tslc(IS) t slc(IS) IIS Load 1 IIS tson(IS) IIS,faut / I IS,lim t Load 2 As long as VbIS < VZ,IS the sense current will never exceed IIS,fault and/or IIS,lim. t t soff(IS) The sense signal is not valid during a settling time after turn-on/off and after change of load current. Figure 2b: Switching an inductive load: IIN VOUT VON(CL) IL IIS t Data Sheet 12 of 18 http://store.iiic.cc/ Rev. 1.0, 2007-07-23 PROFET(R) BTS 6163 D Figure 3a: Typ. current limitation characteristic [A] Figure 3c: Short circuit type two: shut down by short circuit detection, reset by IIN = 0. I L(SC) IIN 80 IL 60 Internal Switch off td(SC2) depending on the external impedance VON 40 1V typ. 20 IIS V ON 0 0 V 10 20 ON(SC) 30 [V] IL k ilis 50 In case of VON > VON(SC) (typ. 3.5 V) the device will be switched off by internal short circuit detection. Figure 3b: Short circuit type one: shut down by short circuit detection, reset by IIN = 0. IS,fault t Shut down remains latched until next reset via input. Figure 4a: Overtemperature Reset if Tj<Tjt IIN IL I IIN VON > VON(SC) IL(SC) IIS IIS,fault td(SC1) tm VOUT Auto Restart IIS I IS,fault tdelay(fault) t Shut down remains latched until next reset via input. Tj t Data Sheet 13 of 18 http://store.iiic.cc/ Rev. 1.0, 2007-07-23 PROFET(R) BTS 6163 D Figure 4b: Overload Tj<Tjt Figure 6a: Current sense versus load current: [mA] I IS I IS,lim 4 IIN IL 3 Vbb -V OUT I L,lim 2 VON=1V typ. RON *I L,lim 1 IS t IL k ilis IIS,lim I IS(LH) 0 0 IL 10 20 30 40 [A] IIS,fault Figure 6b: Current sense ratio22: Figure 5a: Undervoltage restart of charge pump, overvoltage clamp kILIS VOUT 20000 VIN = 0 15000 V dynamic, short Undervoltage not below ON(CL) 10000 VbIN(u) 5000 IL IIN = 0 0 VON(CL) 0 0 V bIN(u) V bIN(ucp) 10 10 20 [A] 30 V12 bb 22 Data Sheet 5 This range for the current sense ratio refers to all devices. The accuracy of the kILIS can be raised by means of calibration the value of kILIS for every single device. 14 of 18 http://store.iiic.cc/ Rev. 1.0, 2007-07-23 PROFET(R) BTS 6163 D Figure 7a: Output voltage drop versus load current: [V] 0.1 VON R ON V ON(NL) 0.05 IL 0.0 0 Data Sheet 1 2 3 4 5 6 7 [A] 15 of 18 http://store.iiic.cc/ Rev. 1.0, 2007-07-23 PROFET(R) BTS 6163 D Package Outlines All dimensions in mm D-Pak-5 Pin: PG-TO252-5-11 Sales Code BTS6163D Green Product (RoHS compliant) To meet the world-wide customer requirements for environmentally friendly products and to be compliant with government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pbfree finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020). Data Sheet 16 of 18 http://store.iiic.cc/ Rev. 1.0, 2007-07-23 PROFET(R) BTS 6163 D Revision History Version Date Changes Rev. 1.0 2007-02-21 RoHS-compliant version of BTS6163D Page 1, page 16: RoHS compliance statement and Green product feature added Page 1, page 16: Change to RoHS compliant package PG-TO252-5-11 Legal disclaimer updated Data Sheet 17 of 18 http://store.iiic.cc/ Rev. 1.0, 2007-07-23 Edition 2007-07-23 Published by Infineon Technologies AG 81726 Munich, Germany (c) 2007 Infineon Technologies AG. All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. http://store.iiic.cc/