SOT-23 Plastic-Encapsulate Transistors Wi. A. 1.BASE 2.EMITTER 3.COLLECTOR 3 Sy UNIT; mm SS8050LT1 TRANSISTOR (NPN) FEATURES Hipieet dissipation Pom: 0.625 W (Tamb=25 ) hbase voltage Vipr)cBo:40V Operatin pandstorage Junction temperature range Tu, Tstg :-55C to#150C ELECTRICAL CHARACTERISTICS (Tamp=25'C_ unless otherwise specified) Collector-base breakdown voltage V(BR)CBO Ic=1001n A, te=0 40 Vv Collector-emitter breakdown voltage V(BR)CEO ic=0.1mA, Ip=0 25 Vv Emitter-base breakdown voltage V(BR)EBO le=100LA, Ic=0 6 Vv Collector cut-off current IcBo Vce=40V,le=0 0.1 BA Collector cut-off current IcEO Vce=20V, IB=0 0,1 BA Emitter cut-off current lEBO Ves=5V, Ic=O0mA 0.1 uA 06 curent gain oe yaesty esona [a | seo Collector-emitter saturation voltage VcEsat Ic=500mA,l8=50mA 0.5 v Base-emitter saturation voltage VBEsat tc=500mA,IB=50mA . 1.2 Vv Base-emitter voltage VBEF leE=100mMA 1.6 Vv Transition frequency ft VcE=6V,ic=20mA,f=30MHz| 100 MHz CLASSIFICATION OF hre(1) 120-200 200-350 DEVICE MARKING : SS8050LT1=Y1 172173 Typical Characteristics - = z 3 3 ke S 3 5 WwW le = 1.5mA 5 a 3 Q o In = 1.0mA Ez & a _ias 0 04 a8 1.2 44 2.6 Vee[V], COLLECTOR-EMITTER VOLTAGE Static Characteristic uy g 10000 oe a lo = 1010 = bt 9 = yj s $000 bre eee ec maa x > areens Siemens > rr meee G- 3 6 = Oo = 100 & } e a >. B = z 3 _ > 40 0.4 1 10 100 4000 IeimA], COLLECTOR CURRENT Base-Emitter Saturation Voitage Collector-Emitter Saturation Voltage 1000 vs te=0 5 f= IMHz a 9 & 8 : 100 : pot z poo 5 Q pe w & : bo. oe . : i. = 2 oO : : = c +0 Pe : =z & at 5 WwW e x 2 1 oO 4 10 100 SS8050LT1 ; Vea 2 1V 100 10 ~* 1 of 4 40 100 1900 icfmA], COLLECTOR CURRENT DC current Gain 100 T Veg = 1V 10 t ~ _| 4 i : i Of 6.0 0.2 0.4 0.6 08 1.0 1.2 Vae[V]. BASE-EMITTER VOLTAGE Base-Emitter On Voltage t 1006 De Vee 10V ~