BGA3012,115 - NXP Semiconductors

1. Product profile

1.1 General description

The BGA3012 MMIC is a wideband amplifier with internal biasing. It is designed

specifically for high linearity CATV line extenders and drop amplifiers over a frequency

range of 5 MHz to 1006 MHz. The LNA is housed in a lead free 3-pin SOT89 package.

1.2 Features and benefits

1.3 Applications

General wideband amplifiers.

CATV return amplifier; frequency ranges of 5 MHz to 300 MHz.

CATV infrastructure network driver in optical nodes (FTTx), distribution amplifiers,

trunk amplifiers and line extenders in the frequency range from 40 MHz to 1006 MHz.

The product is ideally suited for applications as drop amplifiers in CATV distribution

systems such as FTTH

1.4 Quick reference data

[1] The fundamental frequencies (f1) and (f2) lay between 40 MHz and 1006 MHz. The intermodulation product (IM3) is 2 f2f1, where

f2=f

16 MHz. Input power Pi=20 dBm.

[2] The fundamental frequencies (f1) and (f2) lay between 40 MHz and 1006 MHz. The intermodulation product (IM2) is f2f1, with

40 MHz < f1-f2 < 1006 MHz. Input power Pi=20 dBm.

BGA3012

1 GHz 12 dB gain wideband amplifier MMIC

Rev. 3 — 26 September 2013 Product data sheet

SOT89

Internally biased Noise figure of 3.1 dB

Flat gain 75  input and output impedance

High linearity with an IP3O of 40 dBm and

an IP2O of 60 dBm

Operating from 5 V to 8 V supply

Table 1. Quick reference data

Bandwidth 40 MHz to 1006 MHz; Tamb =25



C; typical values at VCC = 8 V; ZS=Z

L=75



; R1 = 100



; R2 = 300



Symbol Parameter Conditions Min Typ Max Unit

VCC supply voltage RF input AC coupled 7.6 8 8.4 V

ICC(tot) total supply current - 110 125 mA

Tamb ambient temperature 40 - +85 C

NF noise figure f = 500 MHz - 3.1 3.6 dB

PL(1dB) output power at 1 dB gain compression 21.5 23 - dBm

IP3Ooutput third-order intercept point [1] 36 40 - dBm

IP2Ooutput second-order intercept point [2] -60- dBm

Product data sheet Rev. 3 — 26 September 2013 2 of 15

NXP Semiconductors BGA3012

1 GHz 12 dB gain wideband amplifier MMIC

2. Pinning information

[1] This pin is DC-coupled and requires an external DC-blocking capacitor.

[2] The center metal base of the SOT89 also functions as heatsink for the power amplifier.

3. Ordering information

4. Marking

5. Limiting values

Ta ble 2. Pinning

Pin Description Simplified outline Graphic symbol

1 RF_OUT and biasing [1]

2GND [2]

3RF_IN [1]

321

sym130

Table 3. Ordering i nformation

Type number Package

Name Description Version

BGA3012 - plastic surface-mounted package; exposed die pad

for good heat transfer; 3 leads SOT89

OM7858 EVB 1 GHz 12 dB gain wideband amplifier application -

OM7862 EVB 5 MHz to 300 MHz 12 dB reverse amplifier application -

OM7866 EVB 40 MHz to 1006 MHz push-pull amplifier application -

Table 4. Marking codes

Type number Marking code Description

BGA3012 *6W * = W : made in China

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VCC supply voltage RF input AC coupled 0.6 +15 V

Piinput pow e r single to ne - 20 dBm

Tstg storage temperature 65 +150 C

Tjjunction temperature - 150 C

Tamb ambient temperature 40 +85 C

VESD electrostatic discharge

voltage Human Body Model (HBM);

According JEDEC standard 22-A114E 2- kV

Charged Device Model (CDM);

According JEDEC standard 22-C101B 2- kV

Product data sheet Rev. 3 — 26 September 2013 3 of 15

NXP Semiconductors BGA3012

1 GHz 12 dB gain wideband amplifier MMIC

6. Thermal characteristics

7. Characteristics

7.1 Forward application

[1] The fundamental frequencies (f1) and (f2) lay between 40 MHz and 1006 MHz. The intermodulation product

(IM3) is 2 f2f1, where f2=f

16 MHz. Input power Pi=20 dBm.

[2] The fundamental frequencies (f1) and (f2) lay between 40 MHz and 1006 MHz. The intermodulation product

(IM2) is f2f1, with 40 MHz < f1-f2 < 1006 MHz. Input power Pi=20 dBm.

[3] Measured with 132 NTSC channels VO = 30 dBmV.

Table 6. Thermal characteristics

Symbol Parameter Conditions Typ Unit

Rth(j-sp) thermal resistance from junction to solder point 40 K/W

Ta ble 7. Characteristics at VCC = 8 V

Bandwidth 40 MHz to 1006 MHz; Tamb = 25



C; typical values at VCC = 8 V; ZS=Z

L=75



;

R1 = 100



; R2 = 30 0



Symbol Parameter Conditions Min Typ Max Unit

VCC supply voltage RF input AC coupled 7.6 8 8.4 V

ICC(tot) total supply current - 110 125 mA

s212insertion power gain 11 12 13 dB

SLsl slope straight line - 0.5 - dB

FL flatness of frequency response - 0.5 - dB

NF noise figure f = 50 MHz - 3.0 3.5 dB

f = 500 MHz - 3.1 3.6 dB

f = 1000 MHz - 3.4 3.9 dB

RLin input return loss f = 50 MHz - 22 - dB

f = 500 MHz - 27 - dB

f = 1000 MHz - 29 - dB

RLout output return loss f = 50 MHz - 21 - dB

f = 500 MHz - 22 - dB

f = 1000 MHz - 15 - dB

PL(1dB) output power at 1 dB

gain compression 21.5 23 - dBm

IP3Ooutput third-order intercept point [1] 36 40 - dBm

IP2Ooutput second-order intercept point [2] -60-dBm

CTB composite triple beat [3] -75 - dBc

CSO co mposite second -order distortion [3] -60 - dBc

Product data sheet Rev. 3 — 26 September 2013 4 of 15

NXP Semiconductors BGA3012

1 GHz 12 dB gain wideband amplifier MMIC

[1] The fundamental frequencies (f1) and (f2) lay between 40 MHz and 1006 MHz. The intermodulation product

(IM3) is 2 f2f1, where f2=f

16 MHz. Input power Pi=20 dBm.

[2] The fundamental frequencies (f1) and (f2) lay between 40 MHz and 1006 MHz. The intermodulation product

(IM2) is f2f1, with 40 MHz < f1-f2 < 1006 MHz. Input power Pi=20 dBm.

[3] Measured with 132 NTSC channels VO = 30 dBmV.

Ta ble 8. Characteristics at VCC = 5 V

Bandwidth 40 MHz to 1006 MHz; Tamb = 25



C; typical values at VCC = 5 V; ZS=Z

L=75



;

R1 = 100



; R2 = 30 0



Symbol Parameter Conditions Min Typ Max Unit

VCC supply voltage RF input AC coupled 4.75 5 5.25 V

ICC(tot) total supply current - 70 85 mA

s212insertion power gain - 12 - dB

SLsl slope straight line - 0.5 - dB

FL flatness of frequency response - 0.5 - dB

NF noise figure f = 50 MHz - 2.9 - dB

f = 500 MHz - 2.9 - dB

f = 1000 MHz - 3.2 - dB

RLin input return loss f = 50 MHz - 22 - dB

f = 500 MHz - 25 - dB

f = 1000 MHz - 25 - dB

RLout output return loss f = 50 MHz - 22 - dB

f = 500 MHz - 22 - dB

f = 1000 MHz - 12 - dB

PL(1dB) output power at 1 dB

gain compression -18-dBm

IP3Ooutput third-order intercept point [1] -36-dBm

IP2Ooutput second-order intercept point [2] -54-dBm

CTB composite triple beat [3] -70 - dBc

CSO composite second-order distortion [3] -54 - dBc

Product data sheet Rev. 3 — 26 September 2013 5 of 15

NXP Semiconductors BGA3012

1 GHz 12 dB gain wideband amplifier MMIC

7.2 Return application

[1] The fundamental frequencies (f1) and (f2) lay between 5 MHz and 300 MHz. The intermodulation product

(IM3) is 2 f2f1, where f2=f

16 MHz. Input power Pi=20 dBm.

[2] The fundamental frequencies (f1) and (f2) lay between 5 MHz and 300 MHz. The intermodulation product

(IM2) is f2f1, with 40 MHz < f1-f2< 300 MHz. Input power Pi=20 dBm.

Ta ble 9. Characteristics at VCC = 8 V

Bandwidth 5 MHz to 300 MHz; Tamb =25



C; typical values at VCC = 8 V; ZS=Z

L=75



;

R1 = 100



; R2 = 30 0



Symbol Parameter Conditions Min Typ Max Unit

VCC supply voltage RF input AC coupled 7.6 8 8.4 V

ICC(tot) total supply current - 110 125 mA

s212insertion power gain - 12 - dB

SLsl slope straight line - 0.5 - dB

FL flatness of frequency response - 0.5 - dB

NF noise figure f = 50 MHz - 3.0 - dB

RLin input return loss f = 5 MHz - 18.5 - dB

f = 100 MHz - 18.5 - dB

f = 200 MHz - 18.5 - dB

f = 300 MHz - 18.5 - dB

RLout output return loss f = 5 MHz - 18.5 - dB

f = 100 MHz - 18.5 - dB

f = 200 MHz - 18.5 - dB

f = 300 MHz - 18.5 - dB

PL(1dB) output power at 1 dB

gain compression -23- dBm

IP3Ooutput third-order intercept point [1] -40- dBm

IP2Ooutput second-order intercept point [2] -60- dBm

Product data sheet Rev. 3 — 26 September 2013 6 of 15

NXP Semiconductors BGA3012

1 GHz 12 dB gain wideband amplifier MMIC

[1] The fundamental frequencies (f1) and (f2) lay between 5 MHz and 300 MHz. The intermodulation product

(IM3) is 2 f2f1, where f2=f

16 MHz. Input power Pi=20 dBm.

[2] The fundamental frequencies (f1) and (f2) lay between 5 MHz and 300 MHz. The intermodulation product

(IM2) is f2f1, with 40 MHz < f1-f2< 300 MHz. Input power Pi=20 dBm.

Ta ble 10. Characteristics at VCC = 5 V

Bandwidth 5 MHz to 300 MHz; Tamb =25



C; typical values at VCC = 5 V; ZS=Z

L=75



;

R1 = 100



; R2 = 30 0



Symbol Parameter Conditions Min Typ Max Unit

VCC supply voltage RF input AC coupled 4.75 5 5.25 V

ICC(tot) total supply current - 70 85 mA

s212insertion power gain - 12 - dB

SLsl slope straight line - 0.5 - dB

FL flatness of frequency response - 0.5 - dB

NF noise figure f = 50 MHz - 2.9 - dB

RLin input return loss f = 5 MHz - 18.5 - dB

f = 100 MHz - 18.5 - dB

f = 200 MHz - 18.5 - dB

f = 300 MHz - 18.5 - dB

RLout output return loss f = 5 MHz - 18.5 - dB

f = 100 MHz - 18.5 - dB

f = 200 MHz - 18.5 - dB

f = 300 MHz - 18.5 - dB

PL(1dB) output power at 1 dB

gain compression -17-dBm

IP3Ooutput third-order intercept point [1] -40-dBm

IP2Ooutput second-order intercept point [2] -55-dBm

Product data sheet Rev. 3 — 26 September 2013 7 of 15

NXP Semiconductors BGA3012

1 GHz 12 dB gain wideband amplifier MMIC

8. Application information

8.1 Forward application 40 MHz to 1006 MHz

The BGA3012 can be used in other applications. Please contact your local sales

representative for more information. Application notes are available o n the NXP website.

8.1.1 Forward application circuit

All control and supply lines must be decoupled properly. The decoupling capacitors must

be placed as close to the device as possible.

Components are listed in Table 11.

Fig 1. BGA3012 app lication circuit

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Product data sheet Rev. 3 — 26 September 2013 8 of 15

NXP Semiconductors BGA3012

1 GHz 12 dB gain wideband amplifier MMIC

8.1.2 Forward application circuit board layout

PCB (Printed-Circuit Board) material = FR4; thickness = 1.5 mm; size = 40 mm 40 mm; r = 4.6; thickness of copper

layer = 35 m;

Components are listed in Table 11.

Fig 2. BGA3012 application circuit board layout

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Table 11. List of comp onents

See Figure 1 and Figure 2.

Component Description Value Size Remarks

C1, C2, C3, C4 capacitor 10 nF SMD 0402 Murata GRM155R71E103KA01D or capacitor of same quality

C5 capacitor 100 pF SMD 0402 M urata GRM1555C1H101JZ01D or capacitor of same quality

J1, J2 F-connector 75 - Bomar 861V509ER6 or F-connector of same quality

J3 header 3-way - - Molex 90121-0763 or header of the same quality

L1, L3 inductor 3.9 nH SMD 0402 Murata LQG15HS3N9S02D or inductor of same quality

L2 choke - SMD 0603 Murata BLM18HD182SN1D or choke of same quality

L4 inductor 880 nH SMD 1206 Murata LQH31HNR88K03L or inductor of same quality

R1 resistor 100 SMD 0402 Yageo RC0402FR-07100RL or resistor of sa me quality

R2 resistor 300 SMD 0402 Yag eo RC0402FR-07300RL or resistor of same quality

U1 BGA3012 - - NXP

Product data sheet Rev. 3 — 26 September 2013 9 of 15

NXP Semiconductors BGA3012

1 GHz 12 dB gain wideband amplifier MMIC

8.2 Return application 5 MHz to 300 MHz

The BGA3012 can be used in other applications. Please contact your local sales

representative for more information. Application notes are available o n the NXP website.

8.2.1 Return application circuit

All control and supply lines must be decoupled properly. The decoupling capacitors must

be placed as close to the device as possible.

Components are listed in Table 11.

Fig 3. BGA3012 app lication circuit

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8

DDD

5)BRXW5)BLQ

--

Product data sheet Rev. 3 — 26 September 2013 10 of 15

NXP Semiconductors BGA3012

1 GHz 12 dB gain wideband amplifier MMIC

8.2.2 Return application circuit board layout

PCB (Printed-Circuit Board) material = FR4; thickness = 1.5 mm; size = 40 mm 40 mm; r = 4.6; thickness of copper

layer = 35 m;

Components are listed in Table 11.

Fig 4. BGA3012 application circuit board layout

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Table 12. List of components

See Figure 1 and Figure 2.

Component Description Value Size Remarks

C1, C2, C3, C4 capacitor 10 nF SMD 0402 Murata GRM155R71E 103KA01D or capacitor of same quality

C5 capacitor 100 pF SMD 0402 Murata GRM1555C1H101JZ01D or capacitor of same quality

J1, J2 F-connector 75 - Bomar 861 V509ER6 or F-connector of same quality

J3 header 3-way - - Molex 90121-0763 or header of the same quality

L2 inductor 22 H SMD 1206 Murata LQH31CN220K03L or inductor of same quality

R1 resistor 100 SMD 0402 Yageo RC0402FR-07100RL or resistor of same quality

R2 resistor 300 SMD 0402 Yageo RC0402FR-07300RL or resistor of same quality

U1 BGA3012 - - NXP

Product data sheet Rev. 3 — 26 September 2013 11 o f 15

NXP Semiconductors BGA3012

1 GHz 12 dB gain wideband amplifier MMIC

9. Package outline

Fig 5. Package outline SOT89 (SC-62)

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

DIMENSIONS (mm are the original dimensions)

SOT89 TO-243 SC-62 06-03-16

06-08-29

EHE

0 2 4 mm

scale

bp3

bp2

bp1

Plastic surface-mounted package; exposed die pad for good heat transfer; 3 leads SOT89

123

UNIT A

mm 1.6

1.4 0.48

0.35

0.44

0.23

4.6

4.4

2.6

2.4

HELp

4.25

3.75

3.0

0.13

1.5 1.2

0.8

bp2

bp1

0.53

0.40

bp3

1.8

1.4

Product data sheet Rev. 3 — 26 September 2013 12 of 15

NXP Semiconductors BGA3012

1 GHz 12 dB gain wideband amplifier MMIC

10. Abbreviations

11. Revision history

Table 13. Ab breviations

Acronym Description

CATV Community Antenna TeleVision

FTTH Fiber To The Home

FTTx Fiber To The “x”

LNA Low-Noise Amplifier

MMIC Monolithic Microwave Integrate d Circuit

Table 14. Revision history

Document ID Release date Data sheet status Change notice Supersedes

BGA3012 v.3 20130926 Produ ct data sheet - BGA3012 v.2

Modifications: •Table 3 on page 2: Evaluation bo ards have been added.

BGA3012 v.2 20130415 Produ ct data sheet - BGA3012 v.1

BGA3012 v.1 20130319 Preli mi nary data sheet - -

Product data sheet Rev. 3 — 26 September 2013 13 of 15

NXP Semiconductors BGA3012

1 GHz 12 dB gain wideband amplifier MMIC

12. Legal information

12.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Definitions”.

[3] The product status of de vice(s) descr ibed in th is docume nt may have cha nged since this docume nt was publis hed and ma y dif fer in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

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Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

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Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and tit le. A short data sh eet is intended

for quick reference only and shou ld not be rel ied u pon to cont ain det ailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semiconductors sales

office. In case of any inconsistency or conf lict with the short data sheet, the

full data sheet shall pre vail.

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data sheet shall define the specification of the product as agreed between

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Product data sheet.

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Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanent ly and irreversibly affect

the quality and reliability of the device.

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Document status[1][2] Product status[3] Definition

Objective [short] data sheet Development This document contains data from the objective specification for product development.

Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.

Product [short] dat a sheet Production This document contains the product specification.

Product data sheet Rev. 3 — 26 September 2013 14 of 15

NXP Semiconductors BGA3012

1 GHz 12 dB gain wideband amplifier MMIC

Export control — This document as well as the item(s) described herein

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Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

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In the event that customer uses the product for design-in and use in

automotive applications to automot ive specifications and standard s, customer

(a) shall use the product without NXP Semiconductors’ warranty of the

product for such automotive applications, use and specifications, and (b)

whenever customer uses the product for automotive applications beyond

NXP Semiconductors’ specifications such use shall be solely at customer’s

own risk, and (c) customer fully indemnifies NXP Semiconductors for any

liability, damages or failed product cl aims resulting f rom customer design an d

use of the product for automotive applications beyond NXP Semiconductors’

standard warranty and NXP Semiconductors’ product specif ications.

Translations — A non-English (translated) version of a document is for

reference only. The English version shall prevail in case of any discrepancy

between the translated and English versions.

12.4 Trademarks

Notice: All referenced b rands, produc t names, service names and trademarks

are the property of their respect i ve ow ners.

13. Contact information

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

NXP Semiconductors BGA3012

1 GHz 12 dB gain wideband amplifier MMIC

For more information, please visit: http://www.nxp.co m

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 26 September 2013

Document identifier: BG A3012

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

14. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

6 Thermal characteristics . . . . . . . . . . . . . . . . . . 3

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3

7.1 Forward application . . . . . . . . . . . . . . . . . . . . . 3

7.2 Return application. . . . . . . . . . . . . . . . . . . . . . . 5

8 Application information. . . . . . . . . . . . . . . . . . . 7

8.1 Forward application 40 MHz to 1006 MHz . . . . 7

8.1.1 Forward application circuit . . . . . . . . . . . . . . . . 7

8.1.2 Forward application circuit board layout. . . . . . 8

8.2 Return application 5 MHz to 300 MHz . . . . . . . 9

8.2.1 Return application circuit . . . . . . . . . . . . . . . . . 9

8.2.2 Return application circuit board layout . . . . . . 10

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11

10 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 12

11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 12

12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 13

12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13

12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

12.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 13

12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14

13 Contact information. . . . . . . . . . . . . . . . . . . . . 14

14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

Mouser Electronics

Authorized Distributor

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NXP:

BGA3012,115