1. Product profile
1.1 General description
The BGA3012 MMIC is a wideband amplifier with internal biasing. It is designed
specifically for high linearity CATV line extenders and drop amplifiers over a frequency
range of 5 MHz to 1006 MHz. The LNA is housed in a lead free 3-pin SOT89 package.
1.2 Features and benefits
1.3 Applications
General wideband amplifiers.
CATV return amplifier; frequency ranges of 5 MHz to 300 MHz.
CATV infrastructure network driver in optical nodes (FTTx), distribution amplifiers,
trunk amplifiers and line extenders in the frequency range from 40 MHz to 1006 MHz.
The product is ideally suited for applications as drop amplifiers in CATV distribution
systems such as FTTH
1.4 Quick reference data
[1] The fundamental frequencies (f1) and (f2) lay between 40 MHz and 1006 MHz. The intermodulation product (IM3) is 2 f2f1, where
f2=f
16 MHz. Input power Pi=20 dBm.
[2] The fundamental frequencies (f1) and (f2) lay between 40 MHz and 1006 MHz. The intermodulation product (IM2) is f2f1, with
40 MHz < f1-f2 < 1006 MHz. Input power Pi=20 dBm.
BGA3012
1 GHz 12 dB gain wideband amplifier MMIC
Rev. 3 — 26 September 2013 Product data sheet
SOT89
Internally biased Noise figure of 3.1 dB
Flat gain 75 input and output impedance
High linearity with an IP3O of 40 dBm and
an IP2O of 60 dBm
Operating from 5 V to 8 V supply
Table 1. Quick reference data
Bandwidth 40 MHz to 1006 MHz; Tamb =25
C; typical values at VCC = 8 V; ZS=Z
L=75
; R1 = 100
; R2 = 300
.
Symbol Parameter Conditions Min Typ Max Unit
VCC supply voltage RF input AC coupled 7.6 8 8.4 V
ICC(tot) total supply current - 110 125 mA
Tamb ambient temperature 40 - +85 C
NF noise figure f = 500 MHz - 3.1 3.6 dB
PL(1dB) output power at 1 dB gain compression 21.5 23 - dBm
IP3Ooutput third-order intercept point [1] 36 40 - dBm
IP2Ooutput second-order intercept point [2] -60- dBm
BGA3012 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 3 — 26 September 2013 2 of 15
NXP Semiconductors BGA3012
1 GHz 12 dB gain wideband amplifier MMIC
2. Pinning information
[1] This pin is DC-coupled and requires an external DC-blocking capacitor.
[2] The center metal base of the SOT89 also functions as heatsink for the power amplifier.
3. Ordering information
4. Marking
5. Limiting values
Ta ble 2. Pinning
Pin Description Simplified outline Graphic symbol
1 RF_OUT and biasing [1]
2GND [2]
3RF_IN [1]
321
sym130
2
13
Table 3. Ordering i nformation
Type number Package
Name Description Version
BGA3012 - plastic surface-mounted package; exposed die pad
for good heat transfer; 3 leads SOT89
OM7858 EVB 1 GHz 12 dB gain wideband amplifier application -
OM7862 EVB 5 MHz to 300 MHz 12 dB reverse amplifier application -
OM7866 EVB 40 MHz to 1006 MHz push-pull amplifier application -
Table 4. Marking codes
Type number Marking code Description
BGA3012 *6W * = W : made in China
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VCC supply voltage RF input AC coupled 0.6 +15 V
Piinput pow e r single to ne - 20 dBm
Tstg storage temperature 65 +150 C
Tjjunction temperature - 150 C
Tamb ambient temperature 40 +85 C
VESD electrostatic discharge
voltage Human Body Model (HBM);
According JEDEC standard 22-A114E 2- kV
Charged Device Model (CDM);
According JEDEC standard 22-C101B 2- kV
BGA3012 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 3 — 26 September 2013 3 of 15
NXP Semiconductors BGA3012
1 GHz 12 dB gain wideband amplifier MMIC
6. Thermal characteristics
7. Characteristics
7.1 Forward application
[1] The fundamental frequencies (f1) and (f2) lay between 40 MHz and 1006 MHz. The intermodulation product
(IM3) is 2 f2f1, where f2=f
16 MHz. Input power Pi=20 dBm.
[2] The fundamental frequencies (f1) and (f2) lay between 40 MHz and 1006 MHz. The intermodulation product
(IM2) is f2f1, with 40 MHz < f1-f2 < 1006 MHz. Input power Pi=20 dBm.
[3] Measured with 132 NTSC channels VO = 30 dBmV.
Table 6. Thermal characteristics
Symbol Parameter Conditions Typ Unit
Rth(j-sp) thermal resistance from junction to solder point 40 K/W
Ta ble 7. Characteristics at VCC = 8 V
Bandwidth 40 MHz to 1006 MHz; Tamb = 25
C; typical values at VCC = 8 V; ZS=Z
L=75
;
R1 = 100
; R2 = 30 0
.
Symbol Parameter Conditions Min Typ Max Unit
VCC supply voltage RF input AC coupled 7.6 8 8.4 V
ICC(tot) total supply current - 110 125 mA
s212insertion power gain 11 12 13 dB
SLsl slope straight line - 0.5 - dB
FL flatness of frequency response - 0.5 - dB
NF noise figure f = 50 MHz - 3.0 3.5 dB
f = 500 MHz - 3.1 3.6 dB
f = 1000 MHz - 3.4 3.9 dB
RLin input return loss f = 50 MHz - 22 - dB
f = 500 MHz - 27 - dB
f = 1000 MHz - 29 - dB
RLout output return loss f = 50 MHz - 21 - dB
f = 500 MHz - 22 - dB
f = 1000 MHz - 15 - dB
PL(1dB) output power at 1 dB
gain compression 21.5 23 - dBm
IP3Ooutput third-order intercept point [1] 36 40 - dBm
IP2Ooutput second-order intercept point [2] -60-dBm
CTB composite triple beat [3] -75 - dBc
CSO co mposite second -order distortion [3] -60 - dBc
BGA3012 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 3 — 26 September 2013 4 of 15
NXP Semiconductors BGA3012
1 GHz 12 dB gain wideband amplifier MMIC
[1] The fundamental frequencies (f1) and (f2) lay between 40 MHz and 1006 MHz. The intermodulation product
(IM3) is 2 f2f1, where f2=f
16 MHz. Input power Pi=20 dBm.
[2] The fundamental frequencies (f1) and (f2) lay between 40 MHz and 1006 MHz. The intermodulation product
(IM2) is f2f1, with 40 MHz < f1-f2 < 1006 MHz. Input power Pi=20 dBm.
[3] Measured with 132 NTSC channels VO = 30 dBmV.
Ta ble 8. Characteristics at VCC = 5 V
Bandwidth 40 MHz to 1006 MHz; Tamb = 25
C; typical values at VCC = 5 V; ZS=Z
L=75
;
R1 = 100
; R2 = 30 0
.
Symbol Parameter Conditions Min Typ Max Unit
VCC supply voltage RF input AC coupled 4.75 5 5.25 V
ICC(tot) total supply current - 70 85 mA
s212insertion power gain - 12 - dB
SLsl slope straight line - 0.5 - dB
FL flatness of frequency response - 0.5 - dB
NF noise figure f = 50 MHz - 2.9 - dB
f = 500 MHz - 2.9 - dB
f = 1000 MHz - 3.2 - dB
RLin input return loss f = 50 MHz - 22 - dB
f = 500 MHz - 25 - dB
f = 1000 MHz - 25 - dB
RLout output return loss f = 50 MHz - 22 - dB
f = 500 MHz - 22 - dB
f = 1000 MHz - 12 - dB
PL(1dB) output power at 1 dB
gain compression -18-dBm
IP3Ooutput third-order intercept point [1] -36-dBm
IP2Ooutput second-order intercept point [2] -54-dBm
CTB composite triple beat [3] -70 - dBc
CSO composite second-order distortion [3] -54 - dBc
BGA3012 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 3 — 26 September 2013 5 of 15
NXP Semiconductors BGA3012
1 GHz 12 dB gain wideband amplifier MMIC
7.2 Return application
[1] The fundamental frequencies (f1) and (f2) lay between 5 MHz and 300 MHz. The intermodulation product
(IM3) is 2 f2f1, where f2=f
16 MHz. Input power Pi=20 dBm.
[2] The fundamental frequencies (f1) and (f2) lay between 5 MHz and 300 MHz. The intermodulation product
(IM2) is f2f1, with 40 MHz < f1-f2< 300 MHz. Input power Pi=20 dBm.
Ta ble 9. Characteristics at VCC = 8 V
Bandwidth 5 MHz to 300 MHz; Tamb =25
C; typical values at VCC = 8 V; ZS=Z
L=75
;
R1 = 100
; R2 = 30 0
.
Symbol Parameter Conditions Min Typ Max Unit
VCC supply voltage RF input AC coupled 7.6 8 8.4 V
ICC(tot) total supply current - 110 125 mA
s212insertion power gain - 12 - dB
SLsl slope straight line - 0.5 - dB
FL flatness of frequency response - 0.5 - dB
NF noise figure f = 50 MHz - 3.0 - dB
RLin input return loss f = 5 MHz - 18.5 - dB
f = 100 MHz - 18.5 - dB
f = 200 MHz - 18.5 - dB
f = 300 MHz - 18.5 - dB
RLout output return loss f = 5 MHz - 18.5 - dB
f = 100 MHz - 18.5 - dB
f = 200 MHz - 18.5 - dB
f = 300 MHz - 18.5 - dB
PL(1dB) output power at 1 dB
gain compression -23- dBm
IP3Ooutput third-order intercept point [1] -40- dBm
IP2Ooutput second-order intercept point [2] -60- dBm
BGA3012 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 3 — 26 September 2013 6 of 15
NXP Semiconductors BGA3012
1 GHz 12 dB gain wideband amplifier MMIC
[1] The fundamental frequencies (f1) and (f2) lay between 5 MHz and 300 MHz. The intermodulation product
(IM3) is 2 f2f1, where f2=f
16 MHz. Input power Pi=20 dBm.
[2] The fundamental frequencies (f1) and (f2) lay between 5 MHz and 300 MHz. The intermodulation product
(IM2) is f2f1, with 40 MHz < f1-f2< 300 MHz. Input power Pi=20 dBm.
Ta ble 10. Characteristics at VCC = 5 V
Bandwidth 5 MHz to 300 MHz; Tamb =25
C; typical values at VCC = 5 V; ZS=Z
L=75
;
R1 = 100
; R2 = 30 0
.
Symbol Parameter Conditions Min Typ Max Unit
VCC supply voltage RF input AC coupled 4.75 5 5.25 V
ICC(tot) total supply current - 70 85 mA
s212insertion power gain - 12 - dB
SLsl slope straight line - 0.5 - dB
FL flatness of frequency response - 0.5 - dB
NF noise figure f = 50 MHz - 2.9 - dB
RLin input return loss f = 5 MHz - 18.5 - dB
f = 100 MHz - 18.5 - dB
f = 200 MHz - 18.5 - dB
f = 300 MHz - 18.5 - dB
RLout output return loss f = 5 MHz - 18.5 - dB
f = 100 MHz - 18.5 - dB
f = 200 MHz - 18.5 - dB
f = 300 MHz - 18.5 - dB
PL(1dB) output power at 1 dB
gain compression -17-dBm
IP3Ooutput third-order intercept point [1] -40-dBm
IP2Ooutput second-order intercept point [2] -55-dBm
BGA3012 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 3 — 26 September 2013 7 of 15
NXP Semiconductors BGA3012
1 GHz 12 dB gain wideband amplifier MMIC
8. Application information
8.1 Forward application 40 MHz to 1006 MHz
The BGA3012 can be used in other applications. Please contact your local sales
representative for more information. Application notes are available o n the NXP website.
8.1.1 Forward application circuit
All control and supply lines must be decoupled properly. The decoupling capacitors must
be placed as close to the device as possible.
Components are listed in Table 11.
Fig 1. BGA3012 app lication circuit
DDD
5)BRXW
& &
/
5
9&&
-
5
/
/&
&
&
/
8
5)BLQ
--
BGA3012 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 3 — 26 September 2013 8 of 15
NXP Semiconductors BGA3012
1 GHz 12 dB gain wideband amplifier MMIC
8.1.2 Forward application circuit board layout
PCB (Printed-Circuit Board) material = FR4; thickness = 1.5 mm; size = 40 mm 40 mm; r = 4.6; thickness of copper
layer = 35 m;
Components are listed in Table 11.
Fig 2. BGA3012 application circuit board layout
DDD
6HPLFRQGXFWRUV
%*$[[(9%
YHUVLRQ
1RYHPEHU
0+]0+]
3&%6SHF)5(U 
5)OD\HU PP2KP
5),1 5)287
&
-
*1'
9&&
*1'
/
&
5 5
//&
-
&
&
/
8
-
Table 11. List of comp onents
See Figure 1 and Figure 2.
Component Description Value Size Remarks
C1, C2, C3, C4 capacitor 10 nF SMD 0402 Murata GRM155R71E103KA01D or capacitor of same quality
C5 capacitor 100 pF SMD 0402 M urata GRM1555C1H101JZ01D or capacitor of same quality
J1, J2 F-connector 75 - Bomar 861V509ER6 or F-connector of same quality
J3 header 3-way - - Molex 90121-0763 or header of the same quality
L1, L3 inductor 3.9 nH SMD 0402 Murata LQG15HS3N9S02D or inductor of same quality
L2 choke - SMD 0603 Murata BLM18HD182SN1D or choke of same quality
L4 inductor 880 nH SMD 1206 Murata LQH31HNR88K03L or inductor of same quality
R1 resistor 100 SMD 0402 Yageo RC0402FR-07100RL or resistor of sa me quality
R2 resistor 300 SMD 0402 Yag eo RC0402FR-07300RL or resistor of same quality
U1 BGA3012 - - NXP
BGA3012 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 3 — 26 September 2013 9 of 15
NXP Semiconductors BGA3012
1 GHz 12 dB gain wideband amplifier MMIC
8.2 Return application 5 MHz to 300 MHz
The BGA3012 can be used in other applications. Please contact your local sales
representative for more information. Application notes are available o n the NXP website.
8.2.1 Return application circuit
All control and supply lines must be decoupled properly. The decoupling capacitors must
be placed as close to the device as possible.
Components are listed in Table 11.
Fig 3. BGA3012 app lication circuit
& &
5
9
&&
-
5
/
&
&
&

8
DDD
5)BRXW5)BLQ
--
BGA3012 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 3 — 26 September 2013 10 of 15
NXP Semiconductors BGA3012
1 GHz 12 dB gain wideband amplifier MMIC
8.2.2 Return application circuit board layout
PCB (Printed-Circuit Board) material = FR4; thickness = 1.5 mm; size = 40 mm 40 mm; r = 4.6; thickness of copper
layer = 35 m;
Components are listed in Table 11.
Fig 4. BGA3012 application circuit board layout
DDD
6HPLFRQGXFWRUV
%*$[[(9%
YHUVLRQ
1RYHPEHU
0+]0+]
3&%6SHF)5(U 
5)OD\HU PP2KP
5),1 5)287
&
-
*1'
9&&
*1'
&
5 5
&&
&
/
8
- -
Table 12. List of components
See Figure 1 and Figure 2.
Component Description Value Size Remarks
C1, C2, C3, C4 capacitor 10 nF SMD 0402 Murata GRM155R71E 103KA01D or capacitor of same quality
C5 capacitor 100 pF SMD 0402 Murata GRM1555C1H101JZ01D or capacitor of same quality
J1, J2 F-connector 75 - Bomar 861 V509ER6 or F-connector of same quality
J3 header 3-way - - Molex 90121-0763 or header of the same quality
L2 inductor 22 H SMD 1206 Murata LQH31CN220K03L or inductor of same quality
R1 resistor 100 SMD 0402 Yageo RC0402FR-07100RL or resistor of same quality
R2 resistor 300 SMD 0402 Yageo RC0402FR-07300RL or resistor of same quality
U1 BGA3012 - - NXP
BGA3012 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 3 — 26 September 2013 11 o f 15
NXP Semiconductors BGA3012
1 GHz 12 dB gain wideband amplifier MMIC
9. Package outline
Fig 5. Package outline SOT89 (SC-62)
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
DIMENSIONS (mm are the original dimensions)
SOT89 TO-243 SC-62 06-03-16
06-08-29
wM
e1
e
EHE
B
B
0 2 4 mm
scale
bp3
bp2
bp1
c
D
Lp
A
Plastic surface-mounted package; exposed die pad for good heat transfer; 3 leads SOT89
123
UNIT A
mm 1.6
1.4 0.48
0.35
c
0.44
0.23
D
4.6
4.4
E
2.6
2.4
HELp
4.25
3.75
e
3.0
w
0.13
e1
1.5 1.2
0.8
bp2
bp1
0.53
0.40
bp3
1.8
1.4
BGA3012 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 3 — 26 September 2013 12 of 15
NXP Semiconductors BGA3012
1 GHz 12 dB gain wideband amplifier MMIC
10. Abbreviations
11. Revision history
Table 13. Ab breviations
Acronym Description
CATV Community Antenna TeleVision
FTTH Fiber To The Home
FTTx Fiber To The “x”
LNA Low-Noise Amplifier
MMIC Monolithic Microwave Integrate d Circuit
Table 14. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BGA3012 v.3 20130926 Produ ct data sheet - BGA3012 v.2
Modifications: Table 3 on page 2: Evaluation bo ards have been added.
BGA3012 v.2 20130415 Produ ct data sheet - BGA3012 v.1
BGA3012 v.1 20130319 Preli mi nary data sheet - -
BGA3012 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 3 — 26 September 2013 13 of 15
NXP Semiconductors BGA3012
1 GHz 12 dB gain wideband amplifier MMIC
12. Legal information
12.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of de vice(s) descr ibed in th is docume nt may have cha nged since this docume nt was publis hed and ma y dif fer in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liab ility for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and tit le. A short data sh eet is intended
for quick reference only and shou ld not be rel ied u pon to cont ain det ailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conf lict with the short data sheet, the
full data sheet shall pre vail.
Product specification The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to off er functions and qualities beyond those described in the
Product data sheet.
12.3 Disclaimers
Limited warr a nty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. NXP Se miconductors takes no
responsibility for the content in this document if provided by an inf ormation
source outside of NXP Semiconductors.
In no event shall NXP Semiconductors be liable for any indirect , incidental,
punitive, special or consequ ential damages (including - wit hout limitatio n - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggreg ate and cumulative l iability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all informa tion supplied prior
to the publication hereof .
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors pro duct can reasonably be expected
to result in perso nal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconducto rs products in such equipment or
applications and ther efore such inclu sion and/or use is at the cu stomer’s own
risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty tha t such application s will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and ope ration of their applications
and products using NXP Semiconductors product s, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suit able and fit for the custome r’s applications and
products planned, as well as fo r the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liabili ty related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessa ry
testing for th e customer’s applications and pro ducts using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by cust omer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanent ly and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individua l agreement. In case an individual
agreement is concluded only the ter ms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing i n this document may be interpreted or
construed as an of fer t o sell product s that is open for accept ance or t he grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.
Product [short] dat a sheet Production This document contains the product specification.
BGA3012 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 3 — 26 September 2013 14 of 15
NXP Semiconductors BGA3012
1 GHz 12 dB gain wideband amplifier MMIC
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Quick reference data The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for aut omo tive use. It i s neit her qua lif ied nor test ed
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automot ive specifications and standard s, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product cl aims resulting f rom customer design an d
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specif ications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
12.4 Trademarks
Notice: All referenced b rands, produc t names, service names and trademarks
are the property of their respect i ve ow ners.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
NXP Semiconductors BGA3012
1 GHz 12 dB gain wideband amplifier MMIC
© NXP B.V. 2013. All rights reserved.
For more information, please visit: http://www.nxp.co m
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 26 September 2013
Document identifier: BG A3012
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
14. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
6 Thermal characteristics . . . . . . . . . . . . . . . . . . 3
7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
7.1 Forward application . . . . . . . . . . . . . . . . . . . . . 3
7.2 Return application. . . . . . . . . . . . . . . . . . . . . . . 5
8 Application information. . . . . . . . . . . . . . . . . . . 7
8.1 Forward application 40 MHz to 1006 MHz . . . . 7
8.1.1 Forward application circuit . . . . . . . . . . . . . . . . 7
8.1.2 Forward application circuit board layout. . . . . . 8
8.2 Return application 5 MHz to 300 MHz . . . . . . . 9
8.2.1 Return application circuit . . . . . . . . . . . . . . . . . 9
8.2.2 Return application circuit board layout . . . . . . 10
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11
10 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 12
11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 12
12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 13
12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13
12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
12.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 13
12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14
13 Contact information. . . . . . . . . . . . . . . . . . . . . 14
14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15