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FEATURES
• Double Side Cooling
• High Surge Capability
APPLICATIONS
• High Power Drives
• High Voltage Power Supplies
• Static Switches
VOLTAGE RATINGS
Part and
Ordering
Number
Repetitive Peak
Voltages
VDRM and VRRM
V
Conditions
DCR1300L85
DCR1300L80
DCR1300L75
DCR1300L70
8500
8000
7500
7000
Tvj = -40° C to 125° C,
IDRM = IRRM = 300mA,
VDRM, VRRM tp = 10ms,
VDSM & VRSM =
VDRM & VRRM + 100V
respectively
Lower voltage grades available.
ORDERING INFOR MATION
When ordering, select the required part number
shown in the Voltag e Ratings selection table.
For example:
DCR1300L85
Note: Please use the complete part num ber when ordering
and quote this number in any future correspondence
relating to your order.
KEY PARAMETERS
VDRM 8500V
IT(AV) 1300A
ITSM 17600A
dV/dt* 1500V/µs
dI/dt 400A/µs
* Higher dV/dt selections available
Outline type code: L
(See Package Details for further information)
Fig. 1 Package outline
DCR1300L85
Phase Control Thyristor
Preliminary Infor ma tion
DS5816-1.1 May 2005 (LN23933)
SEMICONDUCTOR
DCR1300L85
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CURRENT RATINGS
Tcase = 60° C unless stated otherwise
Symbol
Parameter
Test Conditions Max. Units
Double Side Cooled
IT(AV) Mean on-state current Half wave resistive load 1300 A
IT(RMS) RMS value -2037 A
ITContinuous (direct) on-state current -1963 A
SURGE RATINGS
Symbol
Parameter
Test Conditions Max. Units
ITSM Surge (non-repetitive) on-state current 10ms half sine, Tcase = 125°C 17.6 kA
I2t I2t for fusing VR = 0 1.55 MA2s
THERMAL AND MECHANICAL RATINGS
Symbol
Parameter
Test Conditions Min. Max. Units
Rth(j-c) Thermal resistance – junction to case Double side cooled DC - 0.0117 °C/W
Single side cooled Anode DC - 0.0187 °C/W
Cathode DC - 0.0329 °C/W
Rth(c-h) Thermal resistance – case to heatsink Clamping force 37kN Double side - 0.0025 °C/W
(with mounting co mpo und) Single side - 0.005 ° C/W
Tvj Virtual junction temperature On-state (conducting) -135 °C
Reverse (blocking) -125 °C
Tstg Storage temperat ure range -55 125 °C
FmClamping force 33 41 kN
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DYNAMIC CH ARACTERIS TICS
Symbol
Parameter
Test Conditions Min. Max. Units
IRRM/IDRM Peak reverse and off-state current At VRRM/VDRM, Tcase = 125°C -300 mA
dV/dt Max. linear rate of rise of off-state voltage To 67% VDRM, Tj = 125°C, gate open -1500 V/µs
dI/dt Rate of rise of on-state current From 67% VDRM to 2x IT(AV) Repetitive 50Hz -200 A/µs
Gate source 30V, 10Ω,Non-repetitive -400 A/µs
tr < 0.5µs, Tj = 125°C
VT(TO) Threshold voltage – Low level 100A to 2000A at Tcase = 125°C - 1.2 V
Threshold volta ge – High level 2000A to 7000A at Tcase = 125°C - 1.35 V
rTOn-state slope resistance – Low level 100A to 2000A at Tcase = 125°C - 0.8615 mΩ
On-state slope resistance – High level 2000A to 7000A at Tcase = 125°C - 0.767 mΩ
tgd Delay time VD = 67% VDRM, gate sour ce 30V, 10ΩTBD TBD µs
tr = 0.5µs, Tj = 25°C
tqTurn-off time Tj = 125°C, VR = 200V, dI/dt = 1A/µs, -1200 µs
dVDR/dt = 20V/µs linear
QSStored charge IT = 2000A, Tj = 125°C, dI/dt – 1A/µs, 4000 6500 µC
ILLatching current Tj = 25°C, VD = 5V TBD TBD mA
IHHolding current Tj = 25°C, RG-K = ∞, ITM = 500A, IT = 5A TBD TBD mA
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GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
Parameter
Test Conditions Max. Units
VGT Gate trigger voltage VDRM = 5V, Tcase = 25°C 1.5 V
VGD Gate non-trigger voltage At VDRM, Tcase = 125°C TBD V
IGT Gate trigger current VDRM = 5V, Tcase = 25°C 250 mA
IGD Gate non-trigger current VDRM = 5V, Tcase = 25°C TBD mA
CURVES
0
1000
2000
3000
4000
5000
6000
7000
1.0
2.0
3.0
4.0
5.0
6.0
7.0
Instantaneous on-state voltage V
T
- (V)
Instantaneous on-state current IT - (A)
min 125° C
max 125° C
min 25° C
max 25° C
Fig.2 Maximum & minimum on-state characteristics
VTM EQUATION Where A = 1.565095
B = -0.121495
VTM = A + Bln (IT) + C.IT+D.√ITC = 0.00 0638
D = 0.02 1051
these values are valid for Tj = 125° C for IT 100A to 10000A
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0
1
2
3
4
5
6
7
8
9
10
11
0
500
1000
1500
2000
Mean on-state current, I
T(AV)
- (A)
Mean power dissipation - (kW)
180
120
90
60
30
0
10
20
30
40
50
60
70
80
90
100
110
120
130
0
500
1000
1500
2000
Mean on-state current, I
T(AV)
- (A)
Maximum case temperature, T case ( oC )
180
120
90
60
30
Fig.3 On-state power dissipation – sine wave Fig.4 Maximum permis sible case temperature,
double side cooled – sine wav e
0
10
20
30
40
50
60
70
80
90
100
110
120
130
0
500
1000
1500
2000
Mean on-state current, I
T(AV)
- (A)
Maximum heatsink temperature, T Heatsink - ( oC )
180
120
90
60
30
0
1
2
3
4
5
6
7
8
9
10
11
12
0
500
1000
1500
2000
2500
3000
Mean on-state current, I
T(AV)
- (A)
Mean power dissipation - (kW)
d.c.
180
120
90
60
30
Fig.5 Maximum permis sible heatsink temperature,
double side cooled – sine wav e Fig.6 On-state power dissipation – rectangular wave
SEMICONDUCTOR
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0
10
20
30
40
50
60
70
80
90
100
110
120
130
0
500
1000
1500
2000
2500
3000
Mean on-state current, I
T(AV)
- (A)
Maximum permissible case temperature , Tcase - (°C)
d.c.
180
120
90
60
30
0
10
20
30
40
50
60
70
80
90
100
110
120
130
0
500
1000
1500
2000
2500
3000
Mean on-state current, I
T(AV
) - (A)
Maximum heatsik temperature Theatsink - (oC)
d.c.
180
120
90
60
30
Fig.7 Maximum permis sible case temperature,
double side cooled – rectangular wave Fig.8 Maximum permis sible heatsink temperature,
double side cooled – rectangular wave
0
5
10
15
20
25
30
35
0.001
0.01
0.1
1
10
100
Time ( s )
Thermal Impedance, Zthj-c ( °C/kW)
Double Side Cooling
Anode Side Cooling
Cathode Sided Cooling
1
2
3
4
Double side cooled
R
i
(° C/kW)
0.8342
2.6074
4.2073
4.041
T
i
(s)
0.008639
0.0533503
0.3309504
1.612
Anode side cooled
R
i
(° C/kW)
0.9647
2.8312
4.9433
9.909
T
i
(s)
0.0096096
0.0627037
0.4198958
8.908
Cathode side cooled
R
i
(° C/kW)
0.9285
2.9366
2.3581
26.683
T
i
(s)
0.0093033
0.0621535
0.3092235
5.835
Z
th
=
Σ
[R
i
x ( 1-exp. (t/t
i
))]
[1]
∆
R
th(j-c)
Conduction
Tables show the increm en t s of thermal resistance R
th(j-c)
when the devic e
operates at condu ction angles other than d.c.
Double side cooling
Anode Side Cooling
Cathode Sided Cooling
∆
Z
th
(z)
∆
Z
th
(z)
∆
Z
th
(z)
θ
°
sine.
rect.
θ
°
sine.
rect.
θ
°
sine.
rect.
180
1.45
0.98
180
1.43
0.97
180
1.44
0.97
120
1.68
1.40
120
1.66
1.39
120
1.66
1.39
90
1.93
1.64
90
1.90
1.62
90
1.91
1.63
60
2.16
1.90
60
2.12
1.88
60
2.14
1.89
30
2.34
2.19
30
2.30
2.15
30
2.31
2.17
15
2.42
2.34
15
2.37
2.30
15
2.39
2.31
Fig.9 Maximum (limit) transient thermal impedance – junction to case (°C/kW)
SEMICONDUCTOR
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1
10
100
1
10
100
Number of cy cles
Surge current, ITSM- (kA)
Conditions:
Tcase = 125° C
V
R
=0
Pulse w idth = 10ms
0
10
20
30
40
50
1
10
100
Pulse width, t
P
- (ms)
Surge current, ITSM - (kA)
0
1
2
3
4
5
I2t (MA2s)
I
2
t
I
TSM
Conditions:
T
case
= 125° C
V
R
= 0
half-sine wave
Fig.10 Multi-cycle surge current Fig.11 Single-cycle surge current
SEMICONDUCTOR
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PACKAGE DETAILS
For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
CATHODE
ANODE
3rd ANGLE PROJECTION
DO NOT SCALE
IF IN DOUB T ASK
HOLE Ø3.60 X 2.00
ELECTRODES)
DEEP (IN BOTH
GATE
FOR PACKAGE HEIGHT
SEE TABLE
Ø1.5
Ø62.85 NOM.
Ø62.85 NOM.
Ø98.9 MAX.
20° OFFSET (NO M. )
TO GATE TUBE
Device
Maximum
Thickness
(mm)
Minimum
Thickness
(mm)
DCR1374SBA18
34.515
33.965
DCR1375SBA28
34.59
34.04
DCR1376SBA36
34.82
34.27
DCR2690L22
34.515
33.965
DCR2480L28
34.59
34.04
DCR2040L42
34.82
34.27
DCR1850L52
34.94
34.39
DCR1570L65
35.2
34.65
DCR1300L85
35.56
35.01
Nominal weight: 1500g
Clamping force: 37kN ±10%
Lead length: 420mm
Lead terminal connector: M4 ring
Package outline type code: L
Fig.15 Package outline
SEMICONDUCTOR
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POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic
semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages
and current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today.
The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the g rowing needs of our
customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
Solution (PACs).
HEATSINKS
The Power Assembly group has its own proprietary range of extruded alumin i um heatsinks which have been designed to optimise
the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is
available on request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or
Customer Services.
Stresses above those listed in this data sheet may cause permanent damage to the device. In extreme conditions, as with all
semiconductors, this may in c lude potentially hazardous rupture of the package. Appropriate safety precaut ions should always be
followed. http://www.dynexsemi.com
e-mail: p o wer_solutions@dynexsemi.com
HEADQUARTERS OPERATIONS CUSTOMER SERVICE
DYNEX SEMICONDUCTOR LTD Tel: +44(0)1522 502753 / 502901. Fax: +44(0)1522 500020
Doddington Road, Lincoln
Lincolnshire, LN6 3LF. United Kingdom.
Tel: +44(0)1522 500500
Fax: +44(0)1522 500550
Dynex S emiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR
RESALE. PRODUCED IN UNITED KINGDOM.
This publication is issued to provide information only which (unless agreed by the Company in wri ting) may not be used, applied or r eproduced for any purpose nor form part of any order or
contract nor to be regarded as a repr es entation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or
suitability of any p roduct or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible
methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user’s responsibility to
fully determine the performance and suitability of any equipment using such inf ormati on and to ensure that any publication or data used is up to date and has not been superseded. These
products are not suitable for use in any medical products whose failure to perform may resul t in significant injury or death to the user. All products and materials are sol d and services provided
subject to the Company’s conditions of sale, which are available on request.
All brand names and product names used in this publication are trademarks, registered trademarks or trade nam es of their respective owners.
