VS-MBR6045WTPbF, VS-MBR6045WT-N3
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Revision: 30-Aug-11 1Document Number: 94298
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Schottky Rectifier, 2 x 30 A
FEATURES
• 150 °C TJ operation
• Very low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long
term reliability
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified according to JEDEC-JESD47
• Halogen-free according to IEC 61249-2-21 definition
(-N3 only)
DESCRIPTION
The VS-MBR6045WT... center tap Schottky rectifier has
been optimized for very low forward voltage drop, with
moderate leakage. The proprietary barrier technology allows
for reliable operation up to 150 °C junction temperature.
Typical applications are in switching power supplies,
converters, freewheeling diodes, and reverse battery
protection.
PRODUCT SUMMARY
Package TO-247AC
IF(AV) 2 x 30 A
VR45 V
VF at IF0.55 V
IRM max. 150 mA at 125 °C
TJ max. 150 °C
Diode variation Common cathode
EAS 27 mJ
Base
common
cathode
Common
cathode
2
2
13
Anode
1
Anode
2
TO-247AC
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
IF(AV) Rectangular waveform 60 A
VRRM 45 V
IFSM tp = 5 μs sine 2900 A
VF30 Apk, TJ = 125 °C (per leg) 0.55 V
TJ- 55 to 150 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-MBR6045WTPbF VS-MBR6045WT-N3 UNITS
Maximum DC reverse voltage VR45 45 V
Maximum working peak reverse voltage VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average
forward current
See fig. 5
per leg
IF(AV) 50 % duty cycle at TC = 122 °C, rectangular waveform
30
A
per device 60
Maximum peak one cycle
non-repetitive surge current per leg
See fig. 7
IFSM
5 µs sine or 3 µs rect. pulse Following any rated load
condition and with rated
VRRM applied
2900
10 ms sine or 6 ms rect. pulse 360
Non-repetitive avalanche energy per leg EAS TJ = 25 °C, IAS = 4 A, L = 3.4 mH 27 mJ
Repetitive avalanche current per leg IAR Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical 6A
VS-MBR6045WTPbF, VS-MBR6045WT-N3
www.vishay.com Vishay Semiconductors
Revision: 30-Aug-11 2Document Number: 94298
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop per leg
See fig. 1 VFM (1)
30 A TJ = 25 °C 0.62
V60 A 0.75
30 A TJ = 125 °C 0.55
Maximum reverse leakage current per leg
See fig. 2 IRM (1) TJ = 25 °C VR = Rated VR
1mA
TJ = 125 °C 150
Threshold voltage VF(TO) TJ = TJ maximum 0.27 V
Forward slope resistance rt7.3 m
Maximum junction capacitance per leg CTVR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C 1400 pF
Typical series inductance per leg LSMeasured lead to lead 5 mm from package body 7.5 nH
Maximum voltage rate of change dV/dt Rated VR10 000 V/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range TJ, TStg - 55 to 150 °C
Maximum thermal resistance,
junction to case per leg RthJC
DC operation
See fig. 4 1.0
°C/W
Maximum thermal resistance,
junction to case per package DC operation 0.5
Typical thermal resistance,
case to heatsink RthCS Mounting surface, smooth and greased 0.24
Approximate weight 6g
0.21 oz.
Mounting torque minimum 6 (5) kgf · cm
(lbf · in)
maximum 12 (10)
Marking device Case style TO-247AC (JEDEC) MBR6045WT
VS-MBR6045WTPbF, VS-MBR6045WT-N3
www.vishay.com Vishay Semiconductors
Revision: 30-Aug-11 3Document Number: 94298
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Fig. 1 - Maximum Forward Voltage Drop Characteristics
(Per Leg)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage (Per Leg)
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage (Per Leg)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg)
1
100
10
1000
IF - Instantaneous
Forward Current (A)
VFM - Forward Voltage Drop (V)
0.2 0.4 0.6 0.8 1.0 1.61.2 1.4
0
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
0.001
1
10
100
0.1
0.01
1000
I
R
- Reverse Current (mA)
V
R
- Reverse Voltage (V)
1051520 40 45
25 30 35
0
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
TJ = 75 °C
TJ = 50 °C
TJ = 25 °C
100
1000
10 000
C
T
- Junction Capacitance (pF)
V
R
- Reverse Voltage (V)
2010 30 40 50
0
TJ = 25 °C
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1
t1 - Rectangular Pulse Duration (s)
ZthJC - Thermal Impedance (°C/W)
100 10
Single pulse
(thermal resistance)
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
PDM
t1
t2
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
VS-MBR6045WTPbF, VS-MBR6045WT-N3
www.vishay.com Vishay Semiconductors
Revision: 30-Aug-11 4Document Number: 94298
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current (Per Leg)
Fig. 6 - Forward Power Loss Characteristics
(Per Leg)
Fig. 7 - Maximum Non-Repetitive Surge Current
(Per Leg)
Fig. 8 - Unclamped Inductive Test Circuit
Note
(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 100 % rated VR
100
110
120
130
140
150
Allowable Case Temperature (°C)
I
F(AV)
- Average Forward Current (A)
10 5 15 20 454030 3525
0
DC
See note (1)
Square wave (D = 0.50)
100 % rated VR applied
0
15
20
25
10
5
30
Average Power Loss (W)
I
F(AV)
- Average Forward Current (A)
1051520 40 4525 30 35
0
DC
RMS limit
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
100
1000
10 000
IFSM - Non-Repetitive Surge Current (A)
tp - Square Wave Pulse Duration (µs)
100 1000 10 000
10
At any rated load condition
and with rated VRRM applied
following surge
Current
monitor
High-speed
switch
D.U.T.
Rg = 25 Ω
+
Freewheel
diode Vd = 25 V
L
IRFP460
40HFL40S02
VS-MBR6045WTPbF, VS-MBR6045WT-N3
www.vishay.com Vishay Semiconductors
Revision: 30-Aug-11 5Document Number: 94298
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ORDERING INFORMATION TABLE
ORDERING INFORMATION (Example)
PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION
VS-MBR6045WTPbF 25 500 Antistatic plastic tube
VS-MBR6045WT-N3 25 500 Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95223
Part marking information TO-247AC PbF www.vishay.com/doc?95226
TO-247AC -N3 www.vishay.com/doc?95007
- Schottky MBR series
- Current rating (60 = 60 A)
- Voltage rating (45 = 45 V)
- Circuit configuration:
Center tap (dual) TO-247
Device code
62 43 5
MBR 60 45 WT PbFVS-
1
-Vishay Semiconductors product
-
PbF = Lead (Pb)-free and RoHS compliant
-N3 = Halogen-free, RoHS compliant, and totally lead (Pb)-free
Environmental digit
2
3
4
5
6
7
1
Outline Dimensions
www.vishay.com Vishay Semiconductors
Revision: 16-Jun-11 1Document Number: 95223
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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DIMENSIONS in millimeters and inches
Notes
(1) Dimensioning and tolerancing per ASME Y14.5M-1994
(2) Contour of slot optional
(3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
(4) Thermal pad contour optional with dimensions D1 and E1
(5) Lead finish uncontrolled in L1
(6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
(7) Outline conforms to JEDEC outline TO-247 with exception of dimension c
SYMBOL MILLIMETERS INCHES NOTES SYMBOL MILLIMETERS INCHES NOTES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
A 4.65 5.31 0.183 0.209 D2 0.51 1.30 0.020 0.051
A1 2.21 2.59 0.087 0.102 E 15.29 15.87 0.602 0.625 3
A2 1.50 2.49 0.059 0.098 E1 13.72 - 0.540 -
b 0.99 1.40 0.039 0.055 e 5.46 BSC 0.215 BSC
b1 0.99 1.35 0.039 0.053 FK 2.54 0.010
b2 1.65 2.39 0.065 0.094 L 14.20 16.10 0.559 0.634
b3 1.65 2.37 0.065 0.094 L1 3.71 4.29 0.146 0.169
b4 2.59 3.43 0.102 0.135 N 7.62 BSC 0.3
b5 2.59 3.38 0.102 0.133 P 3.56 3.66 0.14 0.144
c 0.38 0.86 0.015 0.034 P1 - 6.98 - 0.275
c1 0.38 0.76 0.015 0.030 Q 5.31 5.69 0.209 0.224
D 19.71 20.70 0.776 0.815 3 R 4.52 5.49 1.78 0.216
D1 13.08 - 0.515 - 4 S 5.51 BSC 0.217 BSC
0.10 AC
M M
E
N
(2)
(3)
(4)
(4)
(2) R/2
B
2 x R
S
D
See view B
2 x e
b4
3 x b
2 x b2
L
C
(5) L1
123
Q
D
A
A2
A
A
A1
C
Ø K BD
M M
A
(6) Ø P (Datum B)
FP1
D1 (4)
4
E1
0.01 BD
M M
View A - A
Thermal pad
D2
DDE E
CC
View B
(b1, b3, b5) Base metal
c1
(b, b2, b4)
Section C - C, D - D, E - E
(c)
Planting Lead assignments
Diodes
1. - Anode/open
2. - Cathode
3. - Anode
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Revision: 12-Mar-12 1Document Number: 91000
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