2N7002CK,215 - NXP Semiconductors

1. Product proﬁle

1.1 General description

ESD protected N-channel enhancement mode Field-Effect Transistor (FET) in a

small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using

Trench MOSFET technology.

1.2 Features

nLogic-level compatible

nVery fast switching

nTrench MOSFET technology

nESD protection up to 3 kV

1.3 Applications

nRelay driver

nHigh-speed line driver

nLow-side loadswitch

nSwitching circuits

1.4 Quick reference data

2N7002CK

60 V, 0.3 A N-channel Trench MOSFET

Rev. 01 — 11 September 2009 Product data sheet

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

VDS drain-source voltage - - 60 V

IDdrain current - - 300 mA

IDM peak drain current single pulse;

tp≤10 µs- - 1.2 A

RDSon drain-source on-state

resistance VGS =10V;

ID= 500 mA - 1.1 1.6 Ω

Product data sheet Rev. 01 — 11 September 2009 2 of 13

NXP Semiconductors 2N7002CK

60 V, 0.3 A N-channel Trench MOSFET

2. Pinning information

3. Ordering information

4. Marking

[1] * = -: made in Hong Kong

* = p: made in Hong Kong

* = t: made in Malaysia

* = W: made in China

Table 2. Pinning

Pin Symbol Description Simpliﬁed outline Graphic symbol

1 G gate

2 S source

3 D drain

017aaa000

Table 3. Ordering information

Type number Package

Name Description Version

2N7002CK TO-236AB plastic surface-mounted package; 3 leads SOT23

Table 4. Marking codes

Type number Marking code[1]

2N7002CK LP*

Product data sheet Rev. 01 — 11 September 2009 3 of 13

NXP Semiconductors 2N7002CK

60 V, 0.3 A N-channel Trench MOSFET

5. Limiting values

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad

for drain 1 cm2.

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VDS drain-source voltage 25 °C≤Tj≤150 °C - 60 V

VGS gate-source voltage - ±20 V

IDdrain current VGS =10V

Tamb =25°C - 300 mA

Tamb = 100 °C - 190 mA

IDM peak drain current Tamb =25°C; tp≤10 µs - 1.2 A

Ptot total power dissipation Tamb =25°C[1] - 350 mW

Tjjunction temperature 150 °C

Tamb ambient temperature −55 +150 °C

Tstg storage temperature −65 +150 °C

Source-drain diode

ISsource current Tamb =25°C - 200 mA

ISM peak source current Tamb =25°C; tp≤10 µs - 1.2 A

ElectroStatic Discharge (ESD)

VESD electrostatic discharge

voltage all pins;

human body model;

C = 100 pF;

R = 1.5 kΩ

-3kV

Fig 1. Normalized total power dissipation as a

function of ambient temperature Fig 2. Normalized continuous drain current as a

function of ambient temperature

Tamb (°C)

−75 17512525 75−25

017aaa001

120

Pder

(%)

Tamb (°C)

−75 17512525 75−25

017aaa002

120

Ider

(%)

Pder Ptot

Ptot 25°C()

------------------------100 %×=Ider ID

ID25°C()

-------------------- 100 %×=

Product data sheet Rev. 01 — 11 September 2009 4 of 13

NXP Semiconductors 2N7002CK

60 V, 0.3 A N-channel Trench MOSFET

6. Thermal characteristics

Tsp =25°C; IDM = single pulse; VGS =10V

Fig 3. Safe operating area; junction to solder point; continuous and peak drain currents as a function of

drain-source voltage

Tamb =25°C; IDM = single pulse; VGS =10V

Fig 4. Safe operating area; junction to ambient; continuous and peak drain currents as a function of

drain-source voltage

017aaa003

VDS (V)

10−1102

101

10−1

(A)

10−2

Limit RDSon = VDS/ID

tp = 10 µs

100 ms

100 µs

1 ms

10 ms

017aaa004

10−1

10−2

(A)

10−3

VDS (V)

10−1102

101

Limit RDSon = VDS/ID

tp = 10 µs

100 ms

100 µs

1 ms

10 ms

Table 6. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

Rth(j-a) thermal resistance from

junction to ambient in free air [1] - 350 500 K/W

Product data sheet Rev. 01 — 11 September 2009 5 of 13

NXP Semiconductors 2N7002CK

60 V, 0.3 A N-channel Trench MOSFET

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

7. Characteristics

Rth(j-sp) thermal resistance from

junction to solder point - - 150 K/W

Table 6. Thermal characteristics

…continued

Symbol Parameter Conditions Min Typ Max Unit

Table 7. Characteristics

amb

=25

C unless otherwise speciﬁed.

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

V(BR)DSS drain-source breakdown

voltage ID=10µA; VGS =0V

Tj=25°C 60--V

Tj=−55 °C 55--V

VGS(th) gate-source threshold

voltage ID= 250 µA; VDS =V

GS;

Tj=25°C1 1.75 2.5 V

IDSS drain leakage current VDS =60V; V

GS =0V

Tj=25°C - - 100 nA

Tj= 150 °C --1µA

IGSS gate leakage current VGS =±20 V; VDS =0V - - 5 µA

VGS =±10 V; VDS = 0 V - 50 450 nA

VGS =±5 V; VDS = 0 V - - 100 nA

RDSon drain-source on-state

resistance VGS = 4.5 V;

ID= 200 mA

Tj=25°C - 1.3 3 Ω

Tj= 150 °C - 2.8 4.4 Ω

VGS =10V;I

D= 500 mA - 1.1 1.6 Ω

Dynamic characteristics

QG(tot) total gate charge ID= 200 mA;

VDS =10V;

VGS = 4.5 V

- 1.09 1.3 nC

QGS gate-source charge - 0.22 - nC

QGD gate-drain charge - 0.23 - nC

Ciss input capacitance VGS =0V; V

DS =25V;

f=1MHz - 47.2 55 pF

Coss output capacitance - 11 20 pF

Crss reverse transfer

capacitance - 5 7.5 pF

td(on) turn-on delay time VDS =15V;

RL=15Ω;

VGS =10V;

RG=6Ω

- 8 15 ns

trrise time - 8 15 ns

td(off) turn-off delay time - 38 50 ns

tffall time - 22 35 ns

Source-drain diode

VSD source-drain voltage IS= 200 mA; VGS = 0 V 0.47 0.79 1.1 V

Product data sheet Rev. 01 — 11 September 2009 6 of 13

NXP Semiconductors 2N7002CK

60 V, 0.3 A N-channel Trench MOSFET

Tj=25°C

(1) VGS =10V

(2) VGS =5V

(3) VGS = 4.5 V

(4) VGS =4V

(5) VGS = 3.5 V

Tj=25°C; VDS =5V

(1) minimum values

(2) typical values

(3) maximum values

Fig 5. Output characteristics: drain current as a

function of drain-source voltage; typical

values

Fig 6. Sub-threshold drain current as a function of

gate-source voltage

Tj=25°C

(1) VGS =4V

(2) VGS = 4.5 V

(3) VGS =5V

(4) VGS =10V

ID= 500 mA

(1) Tj= 150 °C

(2) Tj=25°C

(3) Tj=−55 °C

Fig 7. Drain-source on-state resistance as a function

of drain current; typical values Fig 8. Drain-source on-resistance as a function of

gate-source voltage; typical values

VDS (V)

04312

017aaa005

0.4

0.6

0.2

0.8

1.0

(A)

0.0

(2)(1) (3)

(4)

(5)

017aaa006

VGS (V)

0321

10−4

10−5

10−3

(A)

10−6

(2)(1) (3)

ID (A)

0.0 1.00.80.4 0.60.2

017aaa007

1.5

1.0

2.0

2.5

RDSon

(Ω)

0.5

(4)

(2)

(1)

(3)

VGS (V)

0108462

017aaa008

RDSon

(Ω)

(1)

(2)

(3)

Product data sheet Rev. 01 — 11 September 2009 7 of 13

NXP Semiconductors 2N7002CK

60 V, 0.3 A N-channel Trench MOSFET

ID= 0.25 mA; VDS =V

(1) maximum values

(2) typical values

(3) minimum values

Fig 9. Normalized drain-source on-state resistance

factor as a function of junction temperature Fig 10. Gate-source threshold voltage as a function of

junction temperature

VGS = 0 V; f = 1 MHz

(1) Ciss

(2) Coss

(3) Crss

Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values

Tj (°C)

−60 180120060

017aaa009

1.2

0.6

1.8

2.4

0.0

Tj (°C)

−60 180120060

017aaa010

VGS(th)

(V)

(2)

(1)

(3)

aRDSon

RDSon 25°C()

------------------------------

017aaa011

VDS (V)

10−1102

101

102

(pF)

(2)

(1)

(3)

Product data sheet Rev. 01 — 11 September 2009 8 of 13

NXP Semiconductors 2N7002CK

60 V, 0.3 A N-channel Trench MOSFET

ID= 200 mA; VDD = 30 V; Tj=25°CV

GS =0V

(1) Tj= 150 °C

(2) Tj=25°C

(3) Tj=−55 °C

Fig 12. Gate-source voltage as a function of gate

charge; typical values Fig 13. Source current as a function of source-drain

voltage; typical values

017aaa012

QG (nC)

0.0 1.20.80.4

VGS

(V)

VSD (V)

0.2 1.21.00.6 0.80.4

017aaa013

0.4

0.6

0.2

0.8

1.0

(A)

0.0

(1) (2) (3)

Product data sheet Rev. 01 — 11 September 2009 9 of 13

NXP Semiconductors 2N7002CK

60 V, 0.3 A N-channel Trench MOSFET

8. Package outline

Fig 14. Package outline SOT23 (TO-236AB)

UNIT A1

max. bpcDE e1HELpQwv

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

04-11-04

06-03-16

IEC JEDEC JEITA

mm 0.1 0.48

0.38 0.15

0.09 3.0

2.8 1.4

1.2 0.95

1.9 2.5

2.1 0.55

0.45 0.1

0.2

DIMENSIONS (mm are the original dimensions)

0.45

0.15

SOT23 TO-236AB

detail X

vMA

0 1 2 mm

scale

1.1

0.9

Plastic surface-mounted package; 3 leads SOT23

Product data sheet Rev. 01 — 11 September 2009 10 of 13

NXP Semiconductors 2N7002CK

60 V, 0.3 A N-channel Trench MOSFET

9. Soldering

Fig 15. Reﬂow soldering footprint SOT23 (TO-236AB)

Fig 16. Wave soldering footprint SOT23 (TO-236AB)

solder lands

solder resist

occupied area

solder paste

sot023_fr

0.5

(3×)

0.6

(3×)

0.6

(3×)

0.7

(3×)

3.3

2.9

1.7

1.9

Dimensions in mm

solder lands

solder resist

occupied area

preferred transport direction during soldering

sot023_fw

2.8

4.5

1.4

4.6

1.4

(2×)

1.2

(2×)

2.2

2.6

Dimensions in mm

Product data sheet Rev. 01 — 11 September 2009 11 of 13

NXP Semiconductors 2N7002CK

60 V, 0.3 A N-channel Trench MOSFET

10. Revision history

Table 8. Revision history

Document ID Release date Data sheet status Change notice Supersedes

2N7002CK_1 20090911 Product data sheet - -

Product data sheet Rev. 01 — 11 September 2009 12 of 13

NXP Semiconductors 2N7002CK

60 V, 0.3 A N-channel Trench MOSFET

11. Legal information

11.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Deﬁnitions”.

[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

11.2 Deﬁnitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modiﬁcations or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liability for the consequences of

use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and title. A short data sheet is intended

for quick reference only and should not be relied upon to contain detailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semiconductors sales

ofﬁce. In case of any inconsistency or conﬂict with the short data sheet, the

full data sheet shall prevail.

11.3 Disclaimers

General — Information in this document is believed to be accurate and

reliable. However, NXP Semiconductors does not give any representations or

warranties, expressed or implied, as to the accuracy or completeness of such

information and shall have no liability for the consequences of use of such

information.

Right to make changes — NXP Semiconductors reserves the right to make

changes to information published in this document, including without

limitation speciﬁcations and product descriptions, at any time and without

notice. This document supersedes and replaces all information supplied prior

to the publication hereof.

Suitability for use — NXP Semiconductors products are not designed,

authorized or warranted to be suitable for use in medical, military, aircraft,

space or life support equipment, nor in applications where failure or

malfunction of an NXP Semiconductors product can reasonably be expected

to result in personal injury, death or severe property or environmental

damage. NXP Semiconductors accepts no liability for inclusion and/or use of

NXP Semiconductors products in such equipment or applications and

therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty that such applications will be suitable for the

speciﬁed use without further testing or modiﬁcation.

Limiting values — Stress above one or more limiting values (as deﬁned in

the Absolute Maximum Ratings System of IEC 60134) may cause permanent

damage to the device. Limiting values are stress ratings only and operation of

the device at these or any other conditions above those given in the

Characteristics sections of this document is not implied. Exposure to limiting

values for extended periods may affect device reliability.

Terms and conditions of sale — NXP Semiconductors products are sold

subject to the general terms and conditions of commercial sale, as published

at http://www.nxp.com/proﬁle/terms, including those pertaining to warranty,

intellectual property rights infringement and limitation of liability, unless

explicitly otherwise agreed to in writing by NXP Semiconductors. In case of

any inconsistency or conﬂict between information in this document and such

terms and conditions, the latter will prevail.

No offer to sell or license — Nothing in this document may be interpreted

or construed as an offer to sell products that is open for acceptance or the

grant, conveyance or implication of any license under any copyrights, patents

or other industrial or intellectual property rights.

Export control — This document as well as the item(s) described herein

may be subject to export control regulations. Export might require a prior

authorization from national authorities.

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

11.4 Trademarks

Notice: All referenced brands, product names, service names and trademarks

are the property of their respective owners.

12. Contact information

For more information, please visit: http://www.nxp.com

For sales ofﬁce addresses, please send an email to: salesaddresses@nxp.com

Document status[1][2] Product status[3] Deﬁnition

Objective [short] data sheet Development This document contains data from the objective speciﬁcation for product development.

Preliminary [short] data sheet Qualiﬁcation This document contains data from the preliminary speciﬁcation.

Product [short] data sheet Production This document contains the product speciﬁcation.

NXP Semiconductors 2N7002CK

60 V, 0.3 A N-channel Trench MOSFET

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 11 September 2009

Document identifier: 2N7002CK_1

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

13. Contents

1 Product proﬁle . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3

6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5

8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9

9 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

10 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11

11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12

11.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12

11.2 Deﬁnitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

11.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 12

11.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12

12 Contact information. . . . . . . . . . . . . . . . . . . . . 12

13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13