IPP080N03L G Type IPB080N03L G TM !"#$%!& 3 Power-Transistor Product Summary Features * Fast switching MOSFET for SMPS * Optimized technology for DC/DC converters V DS 30 V R DS(on),max 8.0 mW ID 50 A * Qualified according to JEDEC1) for target applications * N-channel, logic level * Excellent gate charge x R DS(on) product (FOM) * Very low on-resistance R DS(on) * Avalanche rated * Pb-free plating; RoHS compliant * Halogen-free according to IEC61249-2-21 Type IPP080N03L G IPB080N03L G Package PG-TO220-3-1 PG-TO263-3 Marking 080N03L 080N03L Maximum ratings, at T j=25 C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value V GS=10 V, T C=25 C 50 V GS=10 V, T C=100 C 42 V GS=4.5 V, T C=25 C 48 V GS=4.5 V, T C=100 C 34 Unit A Pulsed drain current2) I D,pulse T C=25 C 350 Avalanche current, single pulse3) I AS T C=25 C 50 Avalanche energy, single pulse E AS I D=12 A, R GS=25 W 50 mJ Reverse diode dv /dt dv /dt I D=50 A, V DS=24 V, di /dt =200 A/s, T j,max=175 C 6 kV/s Gate source voltage V GS 1) 20 V J-STD20 and JESD22 Rev. 1.04 page 1 http://store.iiic.cc/ 2010-01-19 IPP080N03L G IPB080N03L G Maximum ratings, at T j=25 C, unless otherwise specified Parameter Symbol Conditions Power dissipation P tot Operating and storage temperature T j, T stg Value T C=25 C IEC climatic category; DIN IEC 68-1 Parameter Unit 47 W -55 ... 175 C 55/175/56 Values Symbol Conditions Unit min. typ. max. - - 3.2 minimal footprint - - 62 6 cm cooling area4) - - 40 Thermal characteristics Thermal resistance, junction - case R thJC SMD version, device on PCB R thJA K/W Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 30 - - Gate threshold voltage V GS(th) V DS=V GS, I D=250 A 1 - 2.2 Zero gate voltage drain current I DSS V DS=30 V, V GS=0 V, T j=25 C - 0.1 1 V DS=30 V, V GS=0 V, T j=125 C - 10 100 V A Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 10 100 nA Drain-source on-state resistance5) R DS(on) V GS=4.5 V, I D=30 A - 9.5 11.9 mW V GS=10 V, I D=30 A - 6.7 8 - 1.3 - W 30 59 - S Gate resistance RG Transconductance g fs 2) See figure 3 for more detailed information 3) See figure 13 for more detailed information |V DS|>2|I D|R DS(on)max, I D=30 A 4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. 5) Measured from drain tab to source pin Rev. 1.04 page 2 http://store.iiic.cc/ 2010-01-19 IPP080N03L G IPB080N03L G Parameter Values Symbol Conditions Unit min. typ. max. - 1400 1900 - 580 770 Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 29 - Turn-on delay time t d(on) - 4.6 - Rise time tr - 3.6 - Turn-off delay time t d(off) - 18 - Fall time tf - 2.8 - Gate to source charge Q gs - 4.6 - Gate charge at threshold Q g(th) - 2.2 - Gate to drain charge Q gd - 2.1 - Switching charge Q sw - 4.5 - Gate charge total Qg - 8.7 - Gate plateau voltage V plateau - 3.3 - Gate charge total Qg V DD=15 V, I D=30 A, V GS=0 to 10 V - 18 - Gate charge total, sync. FET Q g(sync) V DS=0.1 V, V GS=0 to 4.5 V - 7.6 - Output charge Q oss V DD=15 V, V GS=0 V - 15 - - - 43 - - 350 V GS=0 V, V DS=15 V, f =1 MHz V DD=15 V, V GS=10 V, I D=30 A, R G=1.6 W pF ns Gate Charge Characteristics5) V DD=15 V, I D=30 A, V GS=0 to 4.5 V nC V nC Reverse Diode Diode continuous forward current IS A T C=25 C Diode pulse current I S,pulse Diode forward voltage V SD V GS=0 V, I F=30 A, T j=25 C - 0.91 1.1 V Reverse recovery charge Q rr V R=15 V, I F=I S, di F/dt =400 A/s - - 10 nC 6) See figure 16 for gate charge parameter definition Rev. 1.04 page 3 http://store.iiic.cc/ 2010-01-19 IPP080N03L G IPB080N03L G 1 Power dissipation 2 Drain current P tot=f(T C) I D=f(T C); V GS!10 V 50 60 50 40 40 I D [A] P tot [W] 30 30 20 20 10 10 0 0 0 50 100 150 200 0 50 100 T C [C] 150 200 T C [C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 103 10 limited by on-state resistance 1 s 102 0.5 10 s 1 100 s Z thJC [K/W] 0.2 I D [A] DC 10 1 1 ms 10 ms 10 0.1 0.05 0.02 0.1 single pulse 10-1 10-1 0.01 100 101 102 0 10 0 -6 10 0 -5 10 0 -4 10 0 -3 10 0 -2 10 1 -1 10 0 t p [s] V DS [V] Rev. 1.04 0.01 0 page 4 http://store.iiic.cc/ 2010-01-19 IPP080N03L G IPB080N03L G 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 C R DS(on)=f(I D); T j=25 C parameter: V GS parameter: V GS 160 24 10 V 5V 20 4.5 V 3.2 V 120 3.5 V 4V R DS(on) [mW ] I D [A] 16 4V 80 12 4.5 V 8 40 5V 10 V 11.5 V 3.5 V 4 3.2 V 3V 2.8 V 0 0 0 1 2 3 0 20 40 V DS [V] 60 80 100 80 100 I D [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 C parameter: T j 120 100 80 80 I D [A] g fs [S] 60 40 40 20 175 C 25 C 0 0 0 1 2 3 4 5 Rev. 1.04 0 20 40 60 I D [A] V GS [V] page 5 http://store.iiic.cc/ 2010-01-19 IPP080N03L G IPB080N03L G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=30 A; V GS=10 V V GS(th)=f(T j); V GS=V DS; I D=250 A 14 2.5 12 2 10 R DS(on) [mW ] 98 % 1.5 V GS(th) [V] 8 typ 6 1 4 0.5 2 0 0 -60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180 T j [C] T j [C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 104 1000 10000 25 C 25 C, 98% 103 Ciss 1000 100 175 C, 98% I F [A] C [pF] Coss 175 C 102 10 100 Crss 101 1 10 0 5 10 15 20 25 30 0.0 Rev. 1.04 0.5 1.0 1.5 2.0 V SD [V] V DS [V] page 6 http://store.iiic.cc/ 2010-01-19 IPP080N03L G IPB080N03L G 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 W V GS=f(Q gate); I D=30 A pulsed parameter: T j(start) parameter: V DD 100 12 15 V 6V 24 V 10 25 C 8 V GS [V] I AV [A] 100 C 10 150 C 6 4 2 1 0 10-1 100 101 102 103 0 5 t AV [s] 10 15 20 25 Q gate [nC] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 34 V GS Qg 32 V BR(DSS) [V] 30 28 26 V g s(th) 24 Q g (th) 22 Q sw Q gs 20 -60 -20 20 60 100 140 Q g ate Q gd 180 T j [C] Rev. 1.04 page 7 http://store.iiic.cc/ 2010-01-19 IPP080N03L G IPB080N03L G Package Outline Footprint: Rev. 1.04 PG-TO220-3-1 .... Packaging: page 8 http://store.iiic.cc/ 2010-01-19 IPP080N03L G IPB080N03L G Package Outline Rev. 1.04 PG-TO263-3 .... page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ev. 1.04 page 10 http://store.iiic.cc/ 2010-01-19