Type IPP080N03L G
IPB080N03L G
!"#$
%!&
3 Power-Transistor
Features
Fast switching MOSFET for SMPS
Optimized technology for DC/DC converters
Qualified according to JEDEC1) for target applications
N-channel, logic level
Excellent gate charge x RDS(on) product (FOM)
Very low on-resistance RDS(on)
Avalanche rated
Pb-free plating; RoHS compliant
Halogen-free according to IEC61249-2-21
Maximum ratings, at Tj=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current IDVGS=10 V, TC=25 °C 50 A
VGS=10 V, TC=100 °C 42
VGS=4.5 V, TC=25 °C 48
VGS=4.5 V,
TC=100 °C 34
Pulsed drain current2) ID,pulse TC=25 °C 350
Avalanche current, single pulse3) IAS TC=25 °C 50
Avalanche energy, single pulse EAS ID=12 A, RGS=25 W50 mJ
Reverse diode dv/dtdv/dtID=50 A, VDS=24 V,
di/dt=200 A/µs,
Tj,max=175 °C 6 kV/µs
Gate source voltage VGS ±20 V
Value
1) J-STD20 and JESD22
VDS 30 V
RDS(on),max 8.0 mW
ID50 A
Product Summary
Type IPP080N03L G IPB080N03L G
Package PG-TO220-3-1 PG-TO263-3
Marking 080N03L 080N03L
Rev. 1.04 page 1 2010-01-19
http://store.iiic.cc/
IPP080N03L G
IPB080N03L G
Maximum ratings, at Tj=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Power dissipation Ptot TC=25 °C 47 W
Operating and storage temperature Tj,Tstg -55 ... 175 °C
IEC climatic category; DIN IEC 68-1 55/175/56
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
Thermal resistance, junction - case RthJC - - 3.2 K/W
SMD version, device on PCB RthJA minimal footprint - - 62
6 cm² cooling area4) - - 40
Electrical characteristics, at Tj=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V(BR)DSS VGS=0 V, ID=1 mA 30 - - V
Gate threshold voltage VGS(th) VDS=VGS,ID=250 µA 1 - 2.2
Zero gate voltage drain current IDSS VDS=30 V, VGS=0 V,
Tj=25 °C - 0.1 1 µA
VDS=30 V, VGS=0 V,
Tj=125 °C - 10 100
Gate-source leakage current IGSS VGS=20 V, VDS=0 V - 10 100 nA
RDS(on) VGS=4.5 V, ID=30 A - 9.5 11.9 mW
VGS=10 V, ID=30 A - 6.7 8
Gate resistance RG- 1.3 - W
Transconductance gfs |VDS|>2|ID|RDS(on)max,
ID=30 A 30 59 - S
4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
5) Measured from drain tab to source pin
3) See figure 13 for more detailed information
Value
Values
2) See figure 3 for more detailed information
Drain-source on-state resistance5)
Rev. 1.04 page 2 2010-01-19
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IPP080N03L G
IPB080N03L G
Parameter Symbol Conditions Unit
min. typ. max.
Dynamic characteristics
Input capacitance Ciss - 1400 1900 pF
Output capacitance Coss - 580 770
Reverse transfer capacitance Crss - 29 -
Turn-on delay time td(on) - 4.6 - ns
Rise time tr- 3.6 -
Turn-off delay time td(off) - 18 -
Fall time tf- 2.8 -
Gate Charge Characteristics
5)
Gate to source charge Qgs - 4.6 - nC
Gate charge at threshold Qg(th) - 2.2 -
Gate to drain charge Qgd - 2.1 -
Switching charge Qsw - 4.5 -
Gate charge total Qg- 8.7 -
Gate plateau voltage Vplateau - 3.3 - V
Gate charge total QgVDD=15 V, ID=30 A,
VGS=0 to 10 V - 18 -
Gate charge total, sync. FET Qg(sync) VDS=0.1 V,
VGS=0 to 4.5 V - 7.6 - nC
Output charge Qoss VDD=15 V, VGS=0 V - 15 -
Reverse Diode
Diode continuous forward current IS- - 43 A
Diode pulse current IS,pulse - - 350
Diode forward voltage VSD VGS=0 V, IF=30 A,
Tj=25 °C - 0.91 1.1 V
Reverse recovery charge Qrr VR=15 V, IF=IS,
diF/dt=400 A/µs - - 10 nC
6) See figure 16 for gate charge parameter definition
TC=25 °C
Values
VGS=0 V, VDS=15 V,
f=1 MHz
VDD=15 V, VGS=10 V,
ID=30 A, RG=1.6 W
VDD=15 V, ID=30 A,
VGS=0 to 4.5 V
Rev. 1.04 page 3 2010-01-19
http://store.iiic.cc/
IPP080N03L G
IPB080N03L G
1 Power dissipation 2 Drain current
Ptot=f(TC)ID=f(TC); VGS!10 V
3 Safe operating area 4 Max. transient thermal impedance
ID=f(VDS); TC=25 °C; D=0 ZthJC=f(tp)
parameter: tpparameter: D=tp/T
1 µs
10 µs
100 µs
1 ms
10 ms
DC
102
101
100
10-1
103
102
101
100
10-1
VDS [V]
ID[A]
limited by on-state
resistance
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
100
10-1
10-2
10-3
10-4
10-5
10-6
0.01
0.1
1
10
0000001
tp[s]
ZthJC [K/W]
0
10
20
30
40
50
0 50 100 150 200
TCC]
Ptot [W]
0
10
20
30
40
50
60
0 50 100 150 200
TCC]
ID[A]
Rev. 1.04 page 4 2010-01-19
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IPP080N03L G
IPB080N03L G
5 Typ. output characteristics 6 Typ. drain-source on resistance
ID=f(VDS); Tj=25 °C RDS(on)=f(ID); Tj=25 °C
parameter: VGS parameter: VGS
7 Typ. transfer characteristics 8 Typ. forward transconductance
ID=f(VGS); |VDS|>2|ID|RDS(on)max gfs=f(ID); Tj=25 °C
parameter: Tj
3.2 V 3.5 V 4 V
4.5 V
5 V
10 V
11.5 V
0
4
8
12
16
20
24
0 20 40 60 80 100
ID[A]
RDS(on) [mW
W
W
W]
25 °C
175 °C
0
40
80
120
012345
VGS [V]
ID[A]
0
20
40
60
80
100
0 20 40 60 80 100
ID[A]
gfs [S]
2.8 V
3 V
3.2 V
3.5 V
4 V
4.5 V
5 V
10 V
0
40
80
120
160
0 1 2 3
VDS [V]
ID[A]
Rev. 1.04 page 5 2010-01-19
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IPP080N03L G
IPB080N03L G
9 Drain-source on-state resistance 10 Typ. gate threshold voltage
RDS(on)=f(Tj); ID=30 A; VGS=10 V VGS(th)=f(Tj); VGS=VDS;ID=250 µA
11 Typ. capacitances 12 Forward characteristics of reverse diode
C=f(VDS); VGS=0 V; f=1 MHz IF=f(VSD)
parameter: Tj
typ
98 %
0
2
4
6
8
10
12
14
-60 -20 20 60 100 140 180
TjC]
RDS(on) [mW
W
W
W]
0
0.5
1
1.5
2
2.5
-60 -20 20 60 100 140 180
TjC]
VGS(th) [V]
Ciss
Coss
Crss
104
103
102
10110
100
1000
10000
0 5 10 15 20 25 30
VDS [V]
C[pF]
25 °C
175 °C
25 °C, 98%
175 °C, 98%
1
10
100
1000
0.0 0.5 1.0 1.5 2.0
VSD [V]
IF[A]
Rev. 1.04 page 6 2010-01-19
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IPP080N03L G
IPB080N03L G
13 Avalanche characteristics 14 Typ. gate charge
IAS=f(tAV); RGS=25 WVGS=f(Qgate); ID=30 A pulsed
parameter: Tj(start) parameter: VDD
15 Drain-source breakdown voltage 16 Gate charge waveforms
VBR(DSS)=f(Tj); ID=1 mA
20
22
24
26
28
30
32
34
-60 -20 20 60 100 140 180
TjC]
VBR(DSS) [V]
V
GS
Q
gate
V
gs(th)
Q
g(th)
Q
gs
Q
gd
Q
sw
Q
g
25 °C
100 °C
150 °C
103
102
101
100
10-1
1
10
100
tAV [µs]
IAV [A]
6 V
15 V
24 V
0
2
4
6
8
10
12
0 5 10 15 20 25
Qgate [nC]
VGS [V]
Rev. 1.04 page 7 2010-01-19
http://store.iiic.cc/
IPP080N03L G
IPB080N03L G
Package Outline PG-TO220-3-1
….
Footprint: Packaging:
Rev. 1.04 page 8 2010-01-19
http://store.iiic.cc/
IPP080N03L G
IPB080N03L G
Package Outline PG-TO263-3
….
Rev. 1.04 page 9 2010-01-19
IPP080N03L G
IPB080N03L G
….
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Rev. 1.04 page 10 2010-01-19
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