Alliance Semiconductor
2575 Augustine Drive Santa Clara CA Tel: 408-855-4900 Fax: 408-855-4999 www.alsc.com
rev 1.1
November 2003 ASM3P2110A
Features
Generates an EMI optimized clocking
signal at output.
Input frequency – 12.75 MHz.
Output Frequency – 51 MHz (modulated)
Frequency Deviation: ±1%.
Modulation Rate: 30 KHz.
Supply voltage range 3.3V.
Available in commercial and industrial
temperature ranges.
Available in 20-pin 150-mil SSOP package.
Product Description
The ASM3P2110A is a versatile spread spectrum
frequency modulator. The ASM3P2110A reduces
electromagnetic interference (EMI) at the clock source.
The ASM3P2110A allows significant system cost savings
by reducing the number of circuit board layers and
shielding that are required to pass EMI regulations. The
ASM3P2110A modulates the output of PLL in order to
spread the bandwidth of a synthesized clock, thereby
decreasing the peak amplitudes of its harmonics. This
results in significantly lower system EMI compared to the
typical narrow band signal produced by oscillators and
most clock generators. Lowering EMI by increasing a
signal’s bandwidth is called spread spectrum clock
generation.
Block Diagram
VDD
Crystal
Oscillator
REFOUT
XIN
XOUT
VSS
ClockOut
(51MHz)
PLL
+
SS
Output
Buffer
SSON
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Pin Configuration
Pin Description
Pin # Pin Name Pin Type Description
1 X2 O
Crystal connection or external reference frequency input. This pin has
dual functions. It can be connected to either an external crystal or an
reference clock.
2 X1 I
Crystal connection. If using an external reference, this pin must be left
unconnected.
3 VDD P Power supply to the entire chip. (3.3V)
9, 11,
13-16,
18, 19
NC - No connection.
10 CLK O Modulated output (51MHz).
12 SSON I
Digital logic input used to enable spread spectrum function. (Active
HIGH). Spread spectrum is enabled when HIGH, disabled when LOW.
This pin has an internal pull-low resistor.
17 GND P Ground connection.
20 REFOUT O Un-modulated reference output clock of the input frequency.
X2
ASM3P2110A
X1
N
C
CLK
SSON
REFOUT
1
4
2
3
5
6
7
8
9
10 11
12
13
20
15
19
18
14
16
17
N
C
N
C
N
C
N
C
N
C
N
C
N
C
GND
N
C
N
C
N
C
N
C
N
C
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Absolute Maximum Ratings
Symbol Parameter Rating Unit
VDD Supply voltage, DC (GND – 0.5) to 7 V
VI Input voltage, DC (GND-0.5) to (VDD+0.5) V
VO Output voltage, DC (GND-0.5) to (VDD + 0.5) V
IIK Input clamp current (VI <0 or VI > VDD) -50 to +50 mA
IOK Output clamp current (VI <0 or VI > VDD) -50 to +50 mA
TS Storage temperature -65 to +150 °C
TA Ambient temperature range, under bias -25 to +85 °C
TJ Junction temperature 150 °C
Lead temperature (soldering 10 sec) 260 °C
Input static discharge voltage protection
(MIL –STD 883E, Method 3015.7) 2 kV
Note: These are stress ratings only and functional operation is not implied. Exposure to absolute maximum
ratings for extended periods may affect device reliability.
Operating Conditions
Crystal Specifications
Fundamental AT cut parallel resonant crystal
Nominal frequency 12.75MHz
Frequency tolerance ± 50 ppm or better at 25°C
Operating temperature range -20°C to +85°C
Storage temperature -40°C to +85°C
Load capacitance 18pF
Shunt capacitance 7pF maximum
ESR 25
Parameter Symbol Condition / Description Min Typ Max Unit
Supply Voltage VDD 3.3V ± 10% 3 3.3 3.6 V
Ambient Operating
Temperature
Range
TA
-20 +85 °C
Crystal Resonator
Frequency FXIN 12.75 MHz
Output Driver Load
Capacitance CL 15 pF
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DC Electrical Characteristics
Parameter Symbol Conditions / Description Min Typ Max Unit
Overall
Supply Current,
Dynamic IDD VDD=3.3V, FCLK=12.75MHz,
CL=15pF 43 mA
All input pins
High-Level Input
Voltage VIH V
DD=3.3V 2.0 VDD+0.3 V
Low-Level Input
Voltage VIL V
DD=3.3V VSS-0.3 0.8 V
High-Level Input
Current IIH -1 1 µA
Low-Level Input
Current (pull-up) IIL -20 -36 -80 µA
High-Level Output
Source Current IxOH V
DD=V(XIN) = 3.3V, VO=0V 10 21 30 mA
Low-Level Output
Source Current IxOL V
DD=3.3V, V(XIN)=VO=5.5V -10 -21 -30 mA
Clock Outputs
High-Level Output
Source Current IOH V
O=2.4V -20 mA
Low-Level Output
Sink Current IOL V
O=0.4V 23 mA
ZOH V
O=0.5VDD; output driving high 29
Output Impedance ZOL Vo=0.5VDD; output driving low 27
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AC Electrical Characteristics
Parameter Symbol Conditions/ Description Min Typ Max Unit
Rise Time tr VO = 0.3V to 3.0V;
CL = 15pF 2.1 ns
Fall Time tf VO = 3.0V to 0.3V;
CL = 15pF 1.9 ns
Clock Duty
Cycle
Ratio of pulse width (as measured from
rising edge to next falling edge at 2.5V)
to one clock period
45 55 %
On rising edges 500 µs apart at 2.5 V
relative to an ideal clock, PLL B inactive * 45 ps
Jitter, Long
Term Tj (LT) On rising edges 500 µs apart at 2.5 V
relative to an ideal clock, PLL B active * 165
From rising edge to next rising edge at
2.5 V, PLL B inactive * 110 ps
Jitter, peak to
peak Tj (T) From rising edge to next rising edge at
2.5 V, PLL B active * 390
* CL = 15 pF, Input clock frequency = 12.75 MHz, Output frequency = 51 MHz
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Package Information
20-Pin SSOP package
Symbol Dimensions in inches Dimensions in millimeters
Min Max Min Max
A 0.053 0.069 1.35 1.75
A1 0.004 0.010 0.10 0.25
B 0.008 0.012 0.20 0.30
C 0.007 0.010 0.19 0.25
D 0.337 0.344 8.56 8.74
E 0.150 0.157 3.81 3.99
e 0.025 BSC 0.635BSC
H 0.228 0.244 5.79 6.20
L 0.016 0.050 0.41 1.27
θ 0° 8° 0° 8°
D
E H
D
A1
A
θ
L
C
B
e
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Ordering Codes
Part number Package Configuration Temperature Range
ASM3P2110AF-20-JT 20-pin SSOP TUBE Commercial
ASM3P2110AF-20-JR 20-pin SSOP TAPE & REEL Commercial
ASM3I2110AF-20-JT 20-pin SSOP TUBE Industrial
ASM3I2110AF-20-JR 20-pin SSOP TAPE & REEL Industrial
Ordering Information
ASM3P2110AF-20-JR
Licensed under US patent #5,488,627, #6,646,463 and #5,631,920.
OR - SOT23/T/R ST – SOIC, TUBE
TT – TSSOP, TUBE SR - SOIC, T/R
TR – TSSOP, T/R QR – QFN, T/R
QT - QFN, TUBE VT – TVSOP, TUBE
BT - BGA, TUBE VR – TVSOP, T/R
BR – BGA, T/R JR – SSOP, T/R
JT - SSOP, TUBE
PIN COUNT
X = Automotive I = Industrial P or n/c = Commercial
1 – reserved 6 – power management
2 - Non PLL based 7 – power management
3 – EMI Reduction 8 – power management
4 – DDR support products 9 – Hi performance
5
STD Zero Dela
y
Buffe
r
0 - reserved
Alliance Semiconductor Mixed Signal Product
PART NUMBER
Pb FREE
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Alliance Semiconductor Corporation
2575, Augustine Drive,
Santa Clara, CA 95054
Tel# 408-855-4900
Fax: 408-855-4999
www.alsc.com
Copyright © Alliance Semiconductor
All Rights Reserved
Preliminary Information
Part Number: ASM3P2110A
Document Version: v1.1
Note: This product utilizes US Patent # 6,646,463 Impedance Emulator Patent issued to Dan Hariton / Alliance Semiconductor, dated 11-11-2003