Si3445DV Vishay Siliconix P-Channel 1.8-V (G-S) MOSFET VDS (V) -8 8 rDS(on) () ID (A) 0.042 @ VGS = -4.5 V 5.6 0.060 @ VGS = -2.5 V 4.7 0.080 @ VGS = -1.8 V 2.9 (4) S TSOP-6 Top View 1 6 (3) G 3 mm 2 5 3 4 (1, 2, 5, 6) D 2.85 mm P-Channel MOSFET Parameter Symbol Limit Drain-Source Voltage VDS -8 Gate-Source Voltage VGS 8 Continuous Drain Current (TJ = 150C) 150 C)a, b TA = 25C TA = 70C Pulsed Drain Current Continuous Source Current (Diode Conduction)a, b TA = 25C Maximum Power Dissipationa, b TA = 70C Operating Junction and Storage Temperature Range Unit V 5.6 ID 4.5 IDM 20 IS -1.7 A 2.0 PD W 1.3 TJ, Tstg C -55 to 150 Parameter Maximum Junction-to-Ambienta Symbol t 5 sec Steady State Typical Maximum 62.5 RthJA 106 Unit C/W Notes a. Surface Mounted on FR4 Board. b. t 5 sec. Document Number: 70820 S-59643--Rev. A, 21-Sep-98 www.vishay.com FaxBack 408-970-5600 2-1 Si3445DV Vishay Siliconix Parameter Symbol Test Condition Min Typ Max VGS(th) VDS = VGS, ID = -250 mA -0.45 Gate-Body Leakage IGSS VDS = 0 V, VGS = "8 V "100 IDSS VDS = -6.4 V, VGS = 0 V -1 Zero Gate Voltage Drain Current VDS = -6.4 V, VGS = 0 V, TJ = 70C -5 Unit Static Gate Threshold Voltage On-State Drain Currenta a D i S Drain-Source On-State O S Resistance R i Forward Transconductancea Diode Forward Voltagea ID(on) rDS(on) VDS w -5 V, VGS = -4.5 V V -15 nA mA A VGS = -4.5 V, ID = -5.6 A 0.034 0.042 VGS = -2.5 V, ID = -4.7 A 0.048 0.060 VGS = -1.8 V, ID = -2.0 A 0.062 0.080 gfs VDS = -10 V, ID = -5.6 A 15 VSD IS = -1.7 A, VGS = 0 V 0.7 -1.2 15 25 W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs VDS = -4 4 V, V VGS = -4.5 4 5 V, V ID = -5.6 56A nC C 3 Gate-Drain Charge Qgd 2 Turn-On Delay Time td(on) 20 40 Rise Time Turn-Off Delay Time tr td(off) Fall Time tf Source-Drain Reverse Recovery Time trr VDD = -4 4V V,, RL = 4 W ID ^ -1 1 A, A VGEN = -4.5 45V V, RG = 6 W IF = -1.7 A, di/dt = 100 A/ms 50 100 110 220 60 120 60 100 ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. www.vishay.com FaxBack 408-970-5600 2-2 Document Number: 70820 S-59643--Rev. A, 21-Sep-98 Si3445DV Vishay Siliconix Output Characteristics Transfer Characteristics 20 20 2.5 V TC = -55C 16 16 25C I D - Drain Current (A) I D - Drain Current (A) VGS = 5 thru 3 V 2V 12 1.8 V 8 1.5 V 4 12 125C 8 4 1V 0 0 0 1 2 3 4 0 0.5 VDS - Drain-to-Source Voltage (V) 1.0 1.5 2.5 3.0 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 0.20 2500 VGS = 1.8 V 0.16 Ciss 2000 C - Capacitance (pF) r DS(on) - On-Resistance ( ) 2.0 0.12 0.08 VGS = 2.5 V 1500 1000 Coss VGS = 4.5 V 0.04 500 Crss 0 0 0 4 8 12 16 20 0 2 ID - Drain Current (A) 6 8 VDS - Drain-to-Source Voltage (V) Gate Charge On-Resistance vs. Junction Temperature 1.50 5 VDS = 4 V ID = 5.6 A 4 r DS(on) - On-Resistance () (Normalized) V GS - Gate-to-Source Voltage (V) 4 3 2 1 0 0 4 8 12 Qg - Total Gate Charge (nC) Document Number: 70820 S-59643--Rev. A, 21-Sep-98 16 VGS = 4.5 V ID = 5.6 A 1.25 1.00 0.75 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (C) www.vishay.com FaxBack 408-970-5600 2-3 Si3445DV Vishay Siliconix Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 10 0.16 r DS(on)- On-Resistance ( W ) 0.20 I S - Source Current (A) 20 TJ = 150C TJ = 25C 0.12 ID = 5.6 A 0.08 0.04 0 1 0 0.25 0.50 0.75 1.00 1.25 0 1.50 VSD - Source-to-Drain Voltage (V) 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) Threshold Voltage Single Pulse Power 0.4 25 V GS(th) Variance (V) 20 Power (W) 0.2 ID = 250 mA 15 10 0.0 5 -0.2 -50 0 -25 0 25 50 75 100 125 150 0.01 0.1 1 TJ - Temperature (C) 10 100 600 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 2. Per Unit Base = RthJA = 106C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 10-4 4. Surface Mounted 10-3 www.vishay.com FaxBack 408-970-5600 2-4 t1 t2 10-2 10-1 1 Square Wave Pulse Dureation (sec) 10 100 600 Document Number: 70820 S-59643--Rev. A, 21-Sep-98