Si3445DV
Vishay Siliconix
Document Number: 70820
S-59643—Rev. A, 21-Sep-98 www .vishay.com FaxBack 408-970-5600
2-1
P-Channel 1.8-V (G-S) MOSFET
 
VDS (V) rDS(on) () ID (A)
8
0.042 @ VGS = –4.5 V 5.6
–8 0.060 @ VGS = –2.5 V 4.7
0.080 @ VGS = –1.8 V 2.9
(4) S
(3) G
(1, 2, 5, 6) D
P-Channel MOSFET
TSOP-6
Top View
6
4
1
2
3
5
2.85 mm
3 mm
      
Parameter Symbol Limit Unit
Drain-Source Voltage VDS –8
V
Gate-Source V oltage VGS 8V
Continuous Drain Current
(
T
J
= 150C
)
a, bTA = 25CI
D
5.6
A
Continuous
Drain
Current
(TJ
=
150 C)a,
b
TA = 70C
ID
4.5 A
Pulsed Drain Current IDM 20
A
Continuous Source Current (Diode Conduction)a, bIS–1.7
Maximum Power Dissipation
a,
bTA = 25C
PD
2.0
W
Maximum
Power
Dissipationa
,
b
TA = 70C
P
D1.3
W
Operating Junction and Storage Temperature Range TJ, Tstg –55 to 150 C
  
Parameter Symbol Typical Maximum Unit
MaximumJunction
-
to
-
Ambient
a t 5 sec
RthJA
62.5
C/W
M
ax
i
mum
J
unc
ti
on-
t
o-
A
m
bi
en
ta
Steady State
R
thJA 106
C/W
Notes
a. Surface Mounted on FR4 Board.
b. t 5 sec.
Si3445DV
Vishay Siliconix
www.vishay.com FaxBack 408-970-5600
2-2 Document Number: 70820
S-59643—Rev. A, 21-Sep-98
     
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGS(th) VDS = VGS, ID = –250 mA –0.45 V
Gate-Body Leakage IGSS VDS = 0 V, VGS = "8 V "100 nA
Zero Gate Voltage Drain Current
IDSS
VDS = –6.4 V, VGS = 0 V –1
mA
Zero
Gate
Voltage
Drain
Current
I
DSS VDS = –6.4 V, VGS = 0 V, TJ = 70C –5 m
A
On-State Drain CurrentaID(on) VDS w –5 V, VGS = –4.5 V –15 A
DiS OS Ri a
VGS = –4.5 V, ID = –5.6 A 0.034 0.042
W
Drain-Source On-State ResistancearDS(on) VGS = –2.5 V, ID = –4.7 A 0.048 0.060 W
VGS = –1.8 V, ID = –2.0 A 0.062 0.080
Forward Transconductanceagfs VDS = –10 V, ID = –5.6 A 15 S
Diode Forward V oltage aVSD IS = –1.7 A, VGS = 0 V 0.7 –1.2 V
Dynamicb
Total Gate Charge Qg
V 4V V 45 VI 56A
15 25
C
Gate-Source Charge Qgs VDS = –4 V, VGS = –4.5 V, ID = –5.6 A 3nC
Gate-Drain Charge Qgd 2
T urn-On Delay Time td(on)
V4VR4W
20 40
Rise T ime trVDD = –4 V, RL = 4 W
I1AV 45VR6W
50 100
T urn-Off Delay Time td(off)
DD ,L
ID^ –1 A, VGEN = –4.5 V, RG = 6 W110 220 ns
Fall T ime tf60 120
Source-Drain Reverse Recovery T ime trr IF = –1.7 A, di/dt = 100 A/ms 60 100
Notes
a. Pulse test; pulse width v300 ms, duty cycle v2%.
b. Guaranteed by design, not subject to production testing.
Si3445DV
Vishay Siliconix
Document Number: 70820
S-59643—Rev. A, 21-Sep-98 www .vishay.com FaxBack 408-970-5600
2-3
    
0
4
8
12
16
20
0 0.5 1.0 1.5 2.0 2.5 3.0
0
0.04
0.08
0.12
0.16
0.20
0 4 8 12 16 20
0
4
8
12
16
20
01234
0
1
2
3
4
5
0 4 8 12 16 0.75
1.00
1.25
1.50
–50 –25 0 25 50 75 100 125 150
0
500
1000
1500
2000
2500
02468
V
GS = 5 thru 3 V 25C
TC = –55C
Crss
Coss
Ciss
VDS = 4 V
ID = 5.6 A VGS = 4.5 V
ID = 5.6 A
VGS = 4.5 V
VGS = 2.5 V
2.5 V
2 V 125C
1.5 V
Output Characteristics T ransfer Characteristics
Gate Charge
On-Resistance vs. Drain Current
VDS – Drain-to-Source Voltage (V)
– Drain Current (A)I D
VGS – Gate-to-Source Voltage (V)
– Drain Current (A)I D
– Gate-to-Source Voltage (V)
Qg – Total Gate Charge (nC)
VDS – Drain-to-Source Voltage (V)
C – Capacitance (pF)
VGS – On-Resistance (rDS(on) )
ID – Drain Current (A)
Capacitance
On-Resistance vs. Junction Temperature
TJ – Junction Temperature (C)
(Normalized)
– On-Resistance (rDS(on) )
VGS = 1.8 V
1 V
1.8 V
Si3445DV
Vishay Siliconix
www.vishay.com FaxBack 408-970-5600
2-4 Document Number: 70820
S-59643—Rev. A, 21-Sep-98
    
10–3 10–2 1 10 60010–1
10–4 100
0.01
01
10
25
5
10 6000.1
15
20
100
0
0.04
0.08
0.12
0.16
0.20
012345
0 0.25 0.50 0.75 1.00 1.25 1.50
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
Threshold Voltage Single Pulse Power
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
0.1
0.01
Normalized Effective T ransient
Thermal Impedance
– On-Resistance (rDS(on) W)
VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V)
– Source Current (A)I S
TJ – Temperature (C) T ime (sec)
Power (W)
–0.2
0.0
0.2
0.4
–50 –25 0 25 50 75 100 125 150
TJ = 150C
TJ = 25C
ID = 5.6 A
ID = 250mA
Variance (V)VGS(th)
20
1
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
1. Duty Cycle, D =
2. Per Unit Base = RthJA = 106C/W
3. TJM – TA = PDMZthJA(t)
t1
t2
t1t2
Notes:
4. Surface Mounted
PDM
10
Square W ave Pulse Dureation (sec)