BF391 $ FERRANTI BF392 SEMICONGUCTOIS} BF393 NPN Silicon Planar High Voltage Transistors DESCRIPTION These plastic encapsulated general purpose transistors are designed for applications requiring high breakdown voltage and low capacitance. The E-line package is formed by injection moulding a SILICONE plastic specially selected to provide a rugged one-piece encap- sulation resistant to severe environments and allow the high junction temperature operation normally associated with metal can devices. PLASTIC E-LINE (T0-92) E-line encapsulated devices are approved for use in military, industrial and professional equipments. Alternative lead configurations are available as plug-in replacements of TO-5/39 and TO-18 metal can types, and for flat mounting. ABSOLUTE MAXIMUM RATINGS Parameter Symbol BF391 | BF392 | BF393 Unit Collector-Base Voltage Vcso 200 250 300 Vv Collector-Emitter Voltage Vceo 200 250 300 Vv Emitter-Base Voltage Veso 6 6 6 Vv Continuous Collector Current Ic 500 mA Power Dissipation at Tamp = 25C Prot 625 mw at Tease = 25C 1.5 Ww Operating and Storage Temperature Range TT stg ~ 55 to +175 C THERMAL CHARACTERISTICS Parameter Symbol Maximum Unit Thermal Resistance Junction to Ambient Rihg-amb) 220 C/W Junction to Case Rin(j-case? 80 C/W SE13