A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specif i cations are subjec t to change without notice.
CHARACTERISTICS TC = 25 °C
SYMBOL NONETEST CONDITIO NS MINIMUM TYPICAL MAXIMUM UNITS
V(BR)DSS VGS = 0 v ID = 25 mA 65 V
IDSS VDS = 26 V 1.0 mA
VGS(th) VDS = 10 V ID = 75 mA 3.0 5.0 V
Gfs VDS = 10 V ID = 3.0 A 3.0 Siemens
PG
η
ηη
ηC
P-1dB
Ψ
ΨΨ
Ψ
VDD = 28 V POUT = 70 W IDQ = 600 mA
f = 960 MHz
13.0
45
70
14.5
50
75
10:1
dB
%
W
---
MOS FIELD EFFECT TRANSISTOR
PTF10019
DESCRIPTION:
The ASI PTF10019 is Designed for
Cellular, G SM, and D-AMPS
applicarions f r om 860 tp 960 MHz.
FEATURES:
• 70 W, 860-960 MHz
• Internally matched
• Omnigold™ Metalization System
• Silicon Nitride Passivated
MAXIMUM RATINGS
VDSS 65 V
VGS ±20 V
PDISS 215 W @ TC = 25 °C
TJ -40 °C to +200 °C
TSTG -40 °C to +150 °C
θ
θθ
θJC 0.8 °C/W
PACKAGE STYLE
1 = DRAIN 2 = GATE 3 = SOURCE
