GWM 120-0075X1 Three phase full Bridge VDSS = 75 V = 110 A ID25 RDSon typ. = 4.0 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G3 G5 S3 S5 L1 L2 L3 G2 S2 G4 G6 S4 S6 Straight leads Surface Mount Device L- Applications MOSFETs Conditions Maximum Ratings VDSS TVJ = 25C to 150C 75 V 20 V 110 85 A A ID25 ID90 TC = 25C TC = 90C IF25 IF90 TC = 25C (diode) TC = 90C (diode) -o u VGS Symbol Conditions Characteristic Values A A e 110 80 (TVJ = 25C, unless otherwise specified) s min. RDSon on chip level at VGS = 10 V; ID = 60 A VGS(th) VDS = 20 V; ID = 1 mA IDSS VDS = VDSS; VGS = 0 V IGSS VGS = 20 V; VDS = 0 V Qg Qgs Qgd VGS = 10 V; VDS = 36 V; ID = 25 A td(on) tr td(off) tf Eon Eoff Erecoff RthJC RthJH a TVJ = 25C TVJ = 125C h TVJ = 25C TVJ = 125C TVJ = 125C max. 4.0 7.2 4.9 8.4 mW mW 4 V 1 A mA 0.2 A 0.1 115 30 30 nC nC nC 130 100 500 100 ns ns ns ns 0.20 0.50 0.01 mJ mJ mJ p VGS = 10 V; VDS = 30 V ID = 80 A; RG = 39 inductive load typ. 2 with heat transfer paste (IXYS test setup) 1.3 1.0 1.6 AC drives * in automobiles - electric power steering - starter generator * in industrial vehicles - propulsion drives - fork lift drives * in battery supplied equipment t Symbol Features * MOSFETs in trench technology: - low RDSon - optimized intrinsic reverse diode * package: - high level of integration - high current capability 300 A max. - aux. terminals for MOSFET control - terminals for soldering or welding connections - isolated DCB ceramic base plate with optimized heat transfer * Space and weight savings Package options * 2 lead forms available - straight leads (SL) - SMD lead version (SMD) K/W K/W Recommended replacement: MTI 90W75GA / MTI 90W75GC IXYS reserves the right to change limits, test conditions and dimensions. (c) 2011 IXYS All rights reserved 20110407d 1-6 GWM 120-0075X1 Source-Drain Diode Symbol Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1.2 VSD (diode) IF = 80 A; VGS = 0 V 0.9 trr QRM IRM IF = 80 A; -diF/dt = 800 A/s VR = 30 V; TJ = 125C 55 0.9 30 V ns C A Component Conditions IRMS per pin in main current paths (P+, N-, L1, L2, L3) may be additionally limited by external connections Maximum Ratings TVJ Tstg VISOL IISOL < 1 mA, 50/60 Hz, f = 1 minute FC mounting force with clip Symbol Conditions 300 A -55...+175 -55...+125 C C 1000 V~ 50 - 250 t Symbol N CP coupling capacity between shorted pins and mounting tab in the case Weight typ. 0.6 mW 160 pF 25 g -o with heatsink compound max. p h a s e Rpin to chip typ. u Characteristic Values min. IXYS reserves the right to change limits, test conditions and dimensions. (c) 2011 IXYS All rights reserved 20110407d 2-6 GWM 120-0075X1 Straight Leads GWM 120-0075X1-SL 37,5 +0,20 5 0,05 (11x) 3 0,05 1,5 1 0,05 0,5 0,02 1 0,05 S6 G6 S5 G5 S4 G4 S3 G3 S2 G2 S1 G1 L2 L1 L- 25 +0,20 53 0,15 L3 L+ t 2,1 4,5 12 0,05 u 4 0,05 (3x) 6 0,05 Surface Mount Device 37,5 +0,20 (11x) 3 0,05 1,5 -o GWM 120-0075X1-SMD 5 0,05 e 1 0,05 0,5 0,02 a s R1 0,2 S6 G6 S5 G5 S4 G4 S3 G3 S2 G2 S1 G1 h p L2 L1 L- L+ 2,1 1 0,05 12 0,05 4,5 25 +0,20 39 0,15 L3 5 0,10 4 0,05 5 2 (3x) 6 0,05 Leads Ordering Straight Standard SMD Standard Part Name & Packing Unit Marking Part Marking Delivering Mode Base Qty. Ordering Code GWM 120-0075X1 - SL GWM 120-0075X1 Blister 28 505 960 GWM 120-0075X1 - SMD GWM 120-0075X1 Blister 28 505 581 IXYS reserves the right to change limits, test conditions and dimensions. (c) 2011 IXYS All rights reserved 20110407d 3-6 GWM 120-0075X1 250 1,2 VDS = 30 V 1,1 200 1,0 150 ID [A] VDSS [V] Normalized IDSS = 0.25 mA 0,9 100 0,8 50 0,7 -25 0 0 25 50 75 100 125 150 0 1 2 3 4 VGS [V] TJ [C] 250 u 250 TJ = 25C 7V 6.5 V ID [A] 150 5.5 V e 2 3 VDS [V] 4 s 1 5 6V 5.5 V 5V 50 4.5 V 4V 0 6.5 V 150 0 6 a 0 TJ = 125C 7V 10 V 100 5V 50 7 200 6V 100 VGS = 20 V 15 V -o ID [A] 200 6 Fig. 2 Typical transfer characteristic 300 VGS = 20 V 15 V 10 V 5 t Fig. 1 Drain source breakdown voltage VDSS vs. junction temperature TVJ 300 TJ = 25C TJ = 125C 4V 0 1 2 3 VDS [V] 4 5 6 Fig. 4 Typical output characteristic h Fig. 3 Typical output characteristic 4.5 V 4,0 4 V 4.5 V 12 3,5 10 1,6 RDS(on) 1,2 RDS(on) normalized 8 6 0,8 4 0,4 -25 0 25 50 75 100 125 2 150 TJ [C] Fig. 5 Drain source on-state resistance RDS(on) versus junction temperature TJ IXYS reserves the right to change limits, test conditions and dimensions. (c) 2011 IXYS All rights reserved RDS(ON) Normalized p VGE = 10 V ID = 125 A RDS(on) [m] RDS(ON) Normalized 2,0 5V 5.5 V VGS = 10 V ID = 125 A 6V 6.5 V 3,0 TJ = 125C 2,5 2,0 7V 1,5 10 V 1,0 0,5 15 V 20 V 0 50 100 150 ID [A] 200 250 300 Fig. 6 Drain source on-state resistance RDS(on) versus ID 20110407d 4-6 GWM 120-0075X1 14 140 ID = 125 A TJ = 25C 12 120 100 VDS = 15 V VDS = 55 V 6 80 60 4 40 2 20 0 20 40 60 80 100 120 0 140 0 20 40 60 QG [nC] 200 td(on) 0.8 0.2 80 u 0.6 900 800 RG = 39 700 TJ = 125C 600 0.5 td(off) -o 120 Eoff [mJ] 0.7 tr t [ns] TJ = 125C 0.4 0.3 0.1 40 Eon Erec(off) x10 0 20 40 60 80 100 120 0.2 0 140 0.0 ID [A] p td(on) 300 0.50 100 Eon 20 40 60 1.2 50 Erec(off) x10 0 80 100 80 100 120 100 0 140 0 120 Fig. 11 Typ. turn-on energy & switching times vs. gate resistor, inductive switching IXYS reserves the right to change limits, test conditions and dimensions. 1600 1400 td(off) 1.0 0.8 0.6 1000 600 Eoff 0.4 tf 0.2 0.0 1200 800 0 20 40 60 80 100 400 200 0 120 RG [] RG [] (c) 2011 IXYS All rights reserved 60 200 1800 1.4 200 150 0.00 40 VDS = 30 V VGS = +10/0 V ID = 125 A TJ = 125C 1.6 250 0.75 0.25 20 1.8 Eoff [mJ] 1.00 tr t [ns] 1.25 tf Fig. 10 Typ. turn-off energy & switching times vs. collector current, inductive switching a h VDS = 30 V VGS = +10/0 V ID = 125 A TJ = 125C 400 ID [A] Fig. 9 Typ. turn-on energy & switching times vs. collector current, inductive switching 1.50 0 500 300 Eoff 0.1 e 0.0 Eon, Erec(off) [mJ] t 160 1000 VDS = 30 V VGS = +10/0 V 0.9 RG = 39 0.3 1.0 s Eon, Erec(off) [mJ] Fig. 8 Drain current ID vs. case temperature TC VDS = 30 V VGS = +10/0 V 0.4 100 120 140 160 180 TJ [C] Fig.7 Gate charge characteristic 0.5 80 t [ns] 0 t [ns] 8 ID - [A] VGS [V] 10 Fig. 12 Typ. turn-off energy & switching times vs. gate resistor, inductive switching 20110407d 5-6 GWM 120-0075X1 70 50 VR = 30 V TVJ = 125C 60 125 A 80A 55 400 600 800 1000 35 40 A 30 25 20 15 40 A 50 1200 10 200 1400 400 600 Fig. 13 Reverse recovery time trr of the body diode vs. di/dt 250 VR = 30 V TVJ = 125C Reverse recovery current IRM of the body diode vs. di/dt IS [A] e 0.8 800 1000 1200 100 TJ = -25C 25C 125C 150C 50 s 0.6 600 150 -o Qrr [C] 40 A 0 1400 0.0 0.2 0.4 -diF/dt [A/s] a 0.9 ID 0.9 ID 0.1 ID 0.1 ID td(off) t tf Thermal Response [K/W] p 0.9 VGS t tr 1.0 1.2 1.4 0.1 VGS td(on) 0.8 Fig. 16 Source current IS vs. source drain voltage VSD (body diode) h VDS ID 0.6 VSD [V] Reverse recovery charge Qrr of the body diode vs. di/dt VGS 1400 200 80A 1.0 Fig. 15 1200 u 125 A 1.2 400 1000 t Fig. 14 1.6 0.4 800 -diF/dt [A/s] -diF /dt [A/s] 1.4 80 A 40 IRM [A] trr [ns] 65 125 A VR = 30 V TVJ = 125C 45 1.2 1.0 0.8 0.6 0.4 0.2 0.0 GWM 120-0075X1 1 10 100 1000 10000 Time [ms] Fig. 17 Definition of switching times IXYS reserves the right to change limits, test conditions and dimensions. (c) 2011 IXYS All rights reserved Fig. 18 Typ. therm. impedance junction to heatsink ZthJC 20110407d 6-6 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: IXYS: GWM120-0075X1-SMDSAM GWM120-0075X1-SLSAM