Product Summary
Drain source voltage VDS 42 V
On-state resistance RDS
(
on
)
100 m
Nominal load current ID
(
Nom
)
2.4 A
Clamping energy E
A
S2 J
Application
All kinds of resistive, inductive and capacitive loads in switching
or linear applications
μC compatible power switch for 12 V DC applications
Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET in Smart SIPMOS
technology. Fully protected by embedded
protection functions.
Gate-Driving
Unit
ESD Overload
Protection
Over-
temperature
Protection
Short circuit
Protection
Overvoltage-
Protection
Current
Limitation
M
Vbb
In
Source
Drain
HITFET
Pin 1
Pin 2 and 4 (TAB)
Pin 3
P / PG-TO252-3-11
Features
· Logic Level Input
· Input Protection (ESD)
· Thermal shutdown
• Green product (RoHS compliant)
· Overload protection
· Short circuit protection
· Overvoltage protection
· Current limitation
· Analog driving possible
Datasheet 1 Rev. 1.4, 2013-03-07
Smart Low Side Power Switch
Power HITFET BTS 3118D
Maximum Ratings at T
j
= 25 °C, unless otherwise specified 1)
Parameter Symbol Value Unit
Drain source voltage V
DS
42 V
Drain source voltage for short circuit protection
T
j
= -40 ... +150 °C
V
DS(SC)
20
Continuous input current
-0.2V
V
IN
10V
V
IN
< -0.2V or V
IN
> 10V
I
IN
no limit
| I
IN
|
2
mA
Operating temperature T
j
-40 ... +150 °C
Storage temperature T
stg
-55 ... +150
Power dissipation 4)
T
C
= 85 °C
6cm
2
cooling area , T
A
= 85 °C
P
tot
21
1.1
W
Unclamped single pulse inductive energy
1)
E
A
S
2J
Load dump protection V
LoadDump2)
= V
A
+ V
S
V
IN
= 0 and 10 V, td = 400 ms, R
I
= 2
,
R
L
= 6
, V
A
= 13.5 V
V
LD
58 V
Electrostatic discharge voltage
(Human Body Model)
according to ANSI/ESDA/JEDEC JS-001
(1.5 kΩ, 100 pF)
V
ESD
2 kV
Thermal resistance
junction - case: R
thJC
3 K/W
SMD: junction - ambient
@ min. footprint
@ 6 cm
2
cooling area
3)
R
thJA
115
55
1 Not subject to production test, specified by design.
2VLoaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
3 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70μm thick) copper area for drain
connection. PCB mounted vertical without blown air.
4 Not subject to production test, calculated by R
thJA
/R
thJC
and maximum allowed junction temperature
Datasheet 2 Rev. 1.4, 2013-03-07
Smart Low Side Power Switch
Power HITFET BTS 3118D
Electrical Characteristics
Parameter Symbol Values Unit
at T
j
= 25 °C, unless otherwise specified min. typ. max.
Characteristics
Drain source clamp voltage
T
j
= -40 ... +150 °C, I
D
= 10 mA
V
DS(AZ)
42 - 55 V
Off-state drain current T
j
= -40 ... +150 °C
V
DS
= 32 V, V
IN
= 0 V
I
DSS
- 1.5 10 μA
Input threshold voltage
I
D
= 0.6 mA, T
j
= 25 °C
I
D
= 0.6 mA, T
j
= 150 °C
V
IN(th)
1.3
0.8
1.7
-
2.2
-
V
On state input current I
IN
(
on
)
- 10 30 μA
On-state resistance
V
IN
= 5 V, I
D
= 2.2 A, T
j
= 25 °C
V
IN
= 5 V, I
D
= 2.2 A, T
j
= 150 °C
R
DS(on)
-
-
90
160
120
240
m
On-state resistance
V
IN
= 10 V, I
D
= 2.2 A, T
j
= 25 °C
V
IN
= 10 V, I
D
= 2.2 A, T
j
= 150 °C
R
DS(on)
-
-
70
130
100
200
Nominal load current 1)
T
j
< 150 °C, V
IN
= 10 V, T
A
= 85 °C, SMD
2)
I
D(Nom)
2.4 - -
A
Nominal load current 1)
V
IN
= 10 V, V
DS
= 0.5 V, T
C
= 85 °C, T
j
< 150 °C
I
D(ISO)
3.5 - -
Current limit (active if V
DS
> 2.5 V) 3
)
V
IN
= 10 V, V
DS
= 12 V, t
m
= 200 μs
I
D(lim)
10 15 20
1 Not subject to production test, calculated by R
thJA
/R
thJC
and R
DS(on)
2 @ 6 cm
2
cooling area
3
Device switched on into existing short circuit (see diagram Determination of I
D(lim)
). If the device is in on condition
and a short circuit occurs, these values might be exceeded for max. 50 μs.
Datasheet 3 Rev. 1.4, 2013-03-07
Smart Low Side Power Switch
Power HITFET BTS 3118D
Electrical Characteristics
Parameter Symbol Values Unit
at T
j
= 25 °C, unless otherwise specified min. typ. max.
Dynamic Characteristics
Turn-on time V
IN
to 90% I
D
:
R
L
= 4.7
, V
IN
= 0 to 10 V, V
bb
= 12 V
t
on
- 40 100 μs
Turn-off time V
IN
to 10% I
D
:
R
L
= 4.7
, V
IN
= 10 to 0 V, V
bb
= 12 V
t
off
- 70 100
Slew rate on 70 to 50% V
bb
:
R
L
= 4.7
, V
IN
= 0 to 10 V, V
bb
= 12 V
-dV
DS
/dt
on
- 0.4 1.5 V/μs
Slew rate off 50 to 70% V
bb
:
R
L
= 4.7
, V
IN
= 10 to 0 V, V
bb
= 12 V
dV
DS
/dt
off
- 0.6 1.5
Protection Functions
1)
Thermal overload trip temperature T
t
150 175 - °C
Input current protection mode I
IN
(
Prot
)
60 120 300 μA
Input current protection mode
T
j
= 150 °C
I
IN(Prot)
- 100 300
Unclamped single pulse inductive energy
2)
I
D
= 2.2 A, T
j
= 25 °C, V
bb
= 12 V
E
AS
2 - - J
Inverse Diode
Inverse diode forward voltage
I
F
= 10.9 A, t
m
= 250 μs, V
IN
= 0 V,
t
P
= 300 μs
V
SD
- 1.0 - V
1Integrated protection functions are designed to prevent IC destruction under fault conditions
described in the data sheet. Fault conditions are considered as "outside" normal operating range.
Protection functions are not designed for continuous repetitive operation.
2 Not tested, specified by design.
Datasheet 4 Rev. 1.4, 2013-03-07
Smart Low Side Power Switch
Power HITFET BTS 3118D
Block diagram
Inductive and overvoltage
output clamp
Terms
HITFET
IN D
VIN
IDVDS
1
IIN
S
Vbb
RL
2
3
HITFET
VZ
D
S
Short circuit behaviour
Input circuit (ESD protection)
IN
t
V
t
I
IN
t
I
D
t
T
j
Gate Drive
Source/
Ground
Input
Datasheet 5 Rev. 1.4, 2013-03-07
Smart Low Side Power Switch
Power HITFET BTS 3118D
1 Maximum allowable power dissipation
Ptot = f(TC) resp.
Ptot = f(TA) @ RthJA=55 K/W
-50 -25 0 25 50 75 100 °C 150
T
A
;T
C
0
0.5
1
1.5
2
W
3
Ptot
SMD @ 6cm2
Rthjc = 3 K/W
2 On-state resistance
RON = f(Tj); ID=2.2A; VIN=10V
-50 -25 0 25 50 75 100 125
°C
175
Tj
0
25
50
75
100
125
150
175
m
225
RDS(on)
typ.
max.
3 On-state resistance
RON = f(Tj); ID=2.2A; VIN=5V
-50 -25 0 25 50 75 100 125
°C
175
T
j
0
25
50
75
100
125
150
175
200
m
250
RDS(on)
typ.
max.
4 Typ. input threshold voltage
VIN(th) = f(Tj); ID = 0.3 mA; VDS = 12V
-50 -25 0 25 50 75 100
°C
150
T
j
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
V
2
VGS(th)
Datasheet 6 Rev. 1.4, 2013-03-07
Smart Low Side Power Switch
Power HITFET BTS 3118D
5 Typ. transfer characteristics
I
D
=f(V
IN
); V
DS
=12V; T
Jstart
=25 °C
1 2 3 4 5 6 7 8
V10
V
IN
0
2
4
6
8
10
12
A
16
ID
6 Typ. short circuit current
I
D(lim)
= f(T
j
); V
DS
=12V
Parameter: V
IN
-50 -25 0 25 50 75 100 125 °C 175
T
j
10
12
14
16
18
20
A
24
ID
5V
Vin=10V
7 Typ. output characteristics
I
D
=f(V
DS
); T
Jstart
=25 °C
Parameter: V
IN
0 1 2 3 4 V6
V
DS
0
2
4
6
8
10
12
14
16
A
20
I
D
3V
4V
5V
6V
7V
Vin=10V
8 Typ. off-state drain current
I
DSS
= f(T
j
)
-50 -25 0 25 50 75 100 125
°C 175
T
j
0
1
2
3
4
5
6
7
8
9
μA
11
IDSS
typ.
max.
Datasheet 7 Rev. 1.4, 2013-03-07
Smart Low Side Power Switch
Power HITFET BTS 3118D
9 Typ. overload current
ID(lim) = f(t), Vbb=12 V, no heatsink
Parameter: Tjstart
0 0.5 1 1.5 2 2.5 3 3.5 4 ms 5
t
0
5
10
15
A
25
ID(lim)
-40°C
+150°C
85°C
25°C
10 Typ. transient thermal impedance
ZthJA=f(tp) @ 6 cm2 cooling area
Parameter: D=tp/T
10 -8
10 -7
10 -6
10 -5
10 -4
10 -3
10 -2
10 -1
10 0 10 1
10 2 10 4
s
t
p
-3
10
-2
10
-1
10
0
10
1
10
2
10
K/W
Z
thJA
Single pulse
0.01
0.02
0.05
0.1
0.2
D=0.5
11 Determination of ID(lim)
ID(lim) = f(t); tm = 200μs
Parameter: TJstart
0 0.1 0.2 0.3 0.4
ms
0.6
t
0
5
10
15
A
25
ID(lim)
-40°C
25°C
85°C
150°C
Datasheet 8 Rev. 1.4, 2013-03-07
Smart Low Side Power Switch
Power HITFET BTS 3118D
Datasheet 9 Rev. 1.4, 2013-03-07
Smart Low Side Power Switch
Power HITFET BTS 3118D
Package Outlines
1 Package Outlines
5.4 ±0.1
-0.05
6.5 +0.15
A
±0.5
9.98
6.22
-0.2
1
±0.1
±0.15
0.8
0.15 MAX.
±0.1
per side 0.75
2.28
4.57
+0.08
GPT09277
-0.04
0.5
2.3 -0.10
+0.05
B
0.51 MIN.
+0.08
-0.04
0.5
0...0.15
B
A0.25 M
0.1
All metal surfaces tin plated,
except area of cut.
3x
(5)
(4.24)
-0.01
+0.20
0.9
B
Figure 1 PG-TO252-3-11 (Plastic Dual Small Outline Package) (RoHS-Compliant)
To meet the world-wide customer requirements for environmentally friendly products and to be compliant with
government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pb-
free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020).
Please specify the package needed (e.g. green package) when placing an order
You can find all of our packages, sorts of packing and others in our
Infineon Internet Page “Products”: http://www.infineon.com/products.Dimensions in mm
Datasheet 10 Rev. 1.4, 2013-03-07
Smart Low Side Power Switch
Power HITFET BTS 3118D
Revision History
2 Revision History
Version Date Changes
Rev. 1.4 2013-03-07 page 2:
- added footnote “Not subject to production test, specified by design” for
chapter/table Maximum Ratings
- added footnote “Not subject to prod. test, calculated ...” for parameter Ptot
- updated ESD HBM standard in chapter “Maximum Ratings”
page 3:
- updated test condition ID for parameter input threshold voltage VIN(th)
- added footnote “Not subject to production test, calculated...” to the parameter
Nominal load current ID(nom), ID(ISO)
Rev. 1.3 2006-12-22 released automotive green and robust version (BTS)
Package parameter (humidity and climatic) removed in Maximum ratings
Rev. 1.2 2006-12-11 AEC icon added
RoHS icon added
Green product (RoHS-compliant) added to the feature list
Package information updated to green
Green explanation added
Rev. 1.1 2006-08-08 released non automotive green version (ITS)
Rev. 1.0 2004-03-05 released production version
Edition 2013-03-07
Published by
Infineon Technologies AG
81726 Munich, Germany
© Infineon Technologies AG 2013.
All Rights Reserved.
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disclaims any and all warranties and liabilities of any kind, including without limitation warranties of
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