MPQ2907A
PNP SILICON QUAD TRANSISTOR DESCRIPTION:
The CENTRAL SEMICONDUCTOR MPQ2907A type is
comprised of four independent PNP silicon transistors
mounted in a 14-pin DIP, designed for small signal,
general purpose amplifier and switching applications.
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS
Collector-Base Voltage VCBO 60 V
Collector-Emitter Voltage VCEO 60 V
Emitter-Base Voltage VEBO 5.0 V
Continuous Collector Current IC 600 mA
Power Dissipation (per transistor) PD 650 mW
Power Dissipation (total package) PD 2.0 W
Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C)
SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
ICBO V
CB=30V 50 nA
IEBO V
EB=3.0V 50 nA
BVCBO I
C=10μA 60 V
BVCEO I
C=10mA 60 V
BVEBO I
E=10μA 5.0 V
VCE(SAT) I
C=150mA, IB=15mA 0.4 V
VCE(SAT) I
C=300mA, IB=30mA 1.6 V
VBE(SAT) I
C=150mA, IB=15mA 1.3 V
VBE(SAT) I
C=300mA, IB=30mA 2.6 V
hFE V
CE=10V, IC=10mA 75
hFE V
CE=10V, IC=150mA 100
hFE V
CE=10V, IC=300mA 50
fT V
CE=20V, IC=50mA, f=100MHz 200 MHz
Cob V
CB=10V, IE=0, f=1.0MHz 6.0 8.0 pF
Cib V
BE=2.0V, IC=0, f=1.0MHz 20 30 pF
ton V
CC=30V, IC=150mA, IB1=15mA 30 ns
toff V
CC=6.0V, IC=150mA, IB1=IB2=15mA 150 ns
TO-116 CASE
R1 (30-January 2012)
www.centralsemi.com
MPQ2907A
PNP SILICON QUAD TRANSISTOR
TO-116 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Collector Q1 8) Collector Q3
2) Base Q1 9) Base Q3
3) Emitter Q1 10) Emitter Q3
4) No Connection 11) No Connection
5) Emitter Q2 12) Emitter Q4
6) Base Q2 13) Base Q4
7) Collector Q2 14) Collector Q4
MARKING: FULL PART NUMBER
PIN CONFIGURATION
www.centralsemi.com
R1 (30-January 2012)
