2008-2012 Microchip Technology Inc. DS22092E-page 1
MCP1415/16
Features
• High Peak Output Current: 1.5A (typical)
• Wide Input Supply Voltage Operating Range:
- 4.5V to 18V
• Low Shoot-Through/Cross-Conduction Current in
Output St age
• High Capacitive Load Drive Capability:
- 470 pF in 13 ns (typical)
- 1000 pF in 20 ns (typic al)
• Short D elay Times: 41 ns (tD1), 48 ns (tD2) (typical)
• Low Supply Current:
- With Logic ‘1’ Input - 0.65 mA (typical)
- With Logic ‘0’ Input - 0.1 mA (typical)
• Latch-Up Prote cte d: will withs t and 500 mA
Reverse Current
• Logic Input will withstand Negative Swing up to 5V
• Space-saving 5L SOT-23 Package
Applications
• Switch Mode Power Supplies
• Pulse Transformer Drive
• Line Drivers
• Level Translator
• Motor and Solenoid Drive
General Description
MCP1415/1 6 devices are hi gh-speed MOSFET dri vers
that ar e capab le of p rov idi ng 1.5A of pe ak cu rrent. The
inverting or non-inverting single channel output is
directly controlled from either TTL or CMOS (3V to
18V) logic. These devices also feature low shoot-
through current, matched rise and fall time, and short
propagation delays which make them ideal for high
switching frequency applications.
MCP1415/16 devices operate from a single 4.5V to
18V pow er supply and can easily cha rge and discharge
1000 pF gate capacitance in under 20 ns (typical).
They provide low enough impedances in both the on
and off states to ensure that the intended state of the
MOSFET will not be af f ected, even by large transie nts .
These devices are highly latch-up resistant under any
condition within their power and voltage ratings. They
are not subject to damage when noise spiking (up to
5V, of either polarity) occurs on the ground pin. They
can accept, without damage or logic upset, up to
500 mA of r evers e cur re nt bei ng fo rce d back into thei r
outputs. All terminals are fully protected against
Electrostatic Discharge (ESD) up to 2.0 kV (HBM) and
300V (MM).
Package Types:
4
1
2
3
5
4
1
2
3
5
4
1
2
3
5
4
1
2
3
5
VDD
NC
IN
VDD
NC
IN
NC
IN
GND
NC
IN
GND
SOT-23-5
MCP1415 MCP1416
MCP1415R MCP1416R
OUT
GND
OUT
GND
VDD
OUT OUT
VDD
Tiny 1.5A, High-Speed Power MOSFET Driver
MCP1415/16
DS22092E-page 2 2008-2012 Microchip Technology Inc.
Functional Block Diagram
Effective
Input C = 25 pF
MCP1415 In ver ti ng
MCP1416 Non-inverting
Input
GND
VDD
300 mV
4.7V
Inverting
Non-inverting
Note: Unused inputs should be grounded.
650 µA
Output
(Each Input)
2008-2012 Microchip Technology Inc. DS22092E-page 3
MCP1415/16
1.0 ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings †
VDD, Supply Voltage.............................................+20V
VIN, Input Voltage..............(VDD + 0.3V) to (GND - 5V)
Package Power Dissipation (TA=50°C)
5L SOT23......................................................0.39W
ESD Protection on all Pins......................2.0 kV (HBM)
....................................................................400V (MM)
† Notice: S tresses above those listed under “Maximum
Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of
the devi ce at those or any other c onditions ab ove those
indicated in the operational sections of this specifica-
tion is not intended. Exposure to maximum rating con-
ditions for extended periods may affect device
reliability.
DC CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, TA= + 25°C, w ith 4.5V VDD 18V
Parameters Sym Min Typ Max Units Conditions
Input
Logic ‘1’ High Input Voltage VIH 2.4 1.9 — V
Logic ‘0’ Low Input Voltage VIL —1.60.8V
Input Current IIN -1 — +1 µA 0V VIN VDD
Input Voltage VIN -5 — VDD+0.3 V
Output
High Output Voltage VOH VDD - 0.025 — — V DC Test
Low Ou tput Voltage VOL — — 0.025 V DC Test
Output Re si stanc e, High ROH —67.5IOUT =10mA, V
DD = 18V
(Note 2)
Output Re si stanc e, Low ROL —45.5IOUT =10mA, V
DD = 18V
(Note 2)
Peak Output Current IPK —1.5—AV
DD =18V (Note 2)
Latch-Up Protection Withstand
Reverse Current IREV 0.5 — — A Duty cycle 2%, t 300 µs
(Note 2)
Switching Time (Note 1)
Rise Time tR—2025nsFigure 4-1, Figure 4-2
CL= 1000 pF (Note 2)
Fall Time tF—2025nsFigure 4-1, Figure 4-2
CL= 1000 pF (Note 2)
Delay Time tD1 —4150nsFigure 4-1, Figure 4-2 (Note 2)
Delay Time tD2 —4855nsFigure 4-1, Figure 4-2 (Note 2)
Power Supply
Supply Voltage VDD 4.5 — 18 V
Power Supply Current IS— 0.65 1.1 mA VIN =3V
IS— 0.1 0.15 mA VIN =0V
Note 1: Switching times ensured by design.
2: Tested during characterization, not production tested.
MCP1415/16
DS22092E-page 4 2008-2012 Microchip Technology Inc.
DC CHARACTERISTICS (OVER OPERATING TEMPERATURE RANGE)
TEMPERATURE CHARACTERISTICS
Electrical Specifications: Unless otherwise indicated, over operating range with 4.5V VDD 18V.
Parameters Sym Min Typ Max Units Conditions
Input
Logic ‘1’, High Input Voltage VIH 2.4 — — V
Logic ‘0’, Low Input Voltage VIL ——0.8V
Input Current IIN -10 — +10 µA 0V VIN VDD
Input Voltage VIN -5 — VDD+0.3 V
Output
High Output Voltage VOH VDD - 0.025 — — V DC Test
Low Ou tput Voltage VOL — — 0.025 V DC Test
Output Re si stanc e, High ROH —8.59.5IOUT =10mA, V
DD = 18V
(Note 2)
Output Re si stanc e, Low ROL —67IOUT =10mA, V
DD = 18V
(Note 2)
Switching Time (Note 1)
Rise Time tR—3040nsFigure 4-1, Figure 4-2
CL= 1000 pF (Note 2)
Fall Time tF—3040nsFigure 4-1, Figure 4-2
CL= 1000 pF (Note 2)
Delay Time tD1 —4555nsFigure 4-1, Figure 4-2 (Note 2)
Delay Time tD2 —5060 Figure 4-1, Figure 4-2 (Note 2)
Power Supply
Supply Voltage VDD 4.5 — 18 V
Power Supply Current IS— 0.75 1.5 mA VIN =3.0V
IS— 0.15 0.25 mA VIN =0V
Note 1: Switching times en sured by desi gn.
2: Tested during characterization, not production tested.
Electrical Specifications: Unless otherwise noted, all parameters apply with 4.5V VDD 18V
Parameter Sym Min Typ Max Units Comments
Temperature Ranges
Specified Temperature Range TA-40 — +125 °C
Maximum Jun ction Temperature TJ— — +150 °C
Storage Temperature Range TA-65 — +150 °C
Package Thermal Resistances
Thermal Resistance, 5LD SOT23 JA — 256 — °C/W
2008-2012 Microchip Technology Inc. DS22092E-page 5
MCP1415/16
2.0 TYPICAL PERFORMANCE CURVES
Note: Unless otherwise indicated, TA = +25°C with 4.5V VDD = 18V.
FIGURE 2-1: Rise Time vs. Supply
Voltage.
FIGURE 2-2: Rise Time vs. Capacitive
Load.
FIGURE 2-3: Rise and Fall Times vs.
Temperature.
FIGURE 2-4: Fall Time vs. Supply
Voltage.
FIGURE 2-5: Fall Time vs. Capacitive
Load.
FIGURE 2-6: Propagation Delay Time vs.
Input Amplitude.
Note: The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only . The performance ch aracteristics listed herei n are
not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
0
50
100
150
200
250
300
350
400
4 6 8 10 12 14 16 18
Supply Voltage (V)
Rise Time (ns)
10,000 pF
6,800 pF
3,300 pF
1,000 pF
470 pF
0
25
50
75
100
125
150
175
200
225
100 1000 10000
Capacitive Load (pF)
Rise Time (ns)
5V
12V
18V
10
15
20
25
30
35
-40 -25 -10 5 20 35 50 65 80 95 110 125
Temperature (°C)
Time (ns)
CLOAD = 1000 pF
VDD = 18V
tFALL
tRISE
0
50
100
150
200
250
300
4 6 8 1012141618
Supply Voltage (V)
Fall Time (ns)
10,000 pF
6,800 pF
3,300 pF
1,000 pF
470 pF
0
25
50
75
100
125
150
175
200
100 1000 10000
Capacitive Load (pF)
Fall Time (ns)
5V
12V
18V
40
42
44
46
48
50
52
54
4 5 6 7 8 9 10 11 12
Input Amplitude (V)
Propagation Delay (ns)
VDD = 12V
t
D2
t
D1
MCP1415/16
DS22092E-page 6 2008-2012 Microchip Technology Inc.
Note: Unless otherwise indicated, TA = +25°C with 4.5V VDD = 18V.
FIGURE 2-7: Propagation Delay Time vs.
Supply Voltage.
FIGURE 2-8: Propagation Delay Time vs.
Temperature.
FIGURE 2-9: Quiescent Current vs.
Supply Voltage.
FIGURE 2-10: Quiescent Current vs.
Temperature.
FIGURE 2-11: Input Threshold vs. Supply
Voltage.
FIGURE 2-12: Input Threshold vs.
Temperature.
35
45
55
65
75
85
95
105
115
4 6 8 1012141618
Supply Voltage (V)
Propagation Delay (ns)
tD2
tD1
30
35
40
45
50
55
60
-40 -25 -10 5 20 35 50 65 80 95 110 125
Temperature (°C)
Propagation Delay (ns)
tD2
tD1
VDD
= 18
V
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
4 6 8 10 12 14 16 18
Supply Voltage (V)
Quiescent Current (mA)
Input = 1
Input = 0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
-40 -25 -10 5 20 35 50 65 80 95 110 125
Temperature (°C)
Quiescent Current (mA)
Input = 1
Input = 0
VDD = 18V
0.5
1.0
1.5
2.0
2.5
3.0
4 6 8 10 12 14 16 18
Supply Voltage (V)
Input Threshold (V)
VLO
V
HI
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0
-40 -25 -10 5 20 35 50 65 80 95 110 125
Temperature (°C)
Input Threshold (V)
VLO
VHI
VDD = 12V
2008-2012 Microchip Technology Inc. DS22092E-page 7
MCP1415/16
Note: Unless otherwise indicated, TA = +25°C with 4.5V VDD = 18V.
FIGURE 2-13: Supply Curr ent vs.
Capacitive Load .
FIGURE 2-14: Suppl y Curr ent vs.
Capacitive Load .
FIGURE 2-15: Supply Curr ent vs.
Capacitive Load .
FIGURE 2-16: Supply Current vs.
Frequency.
FIGURE 2-17: Supply Current vs.
Frequency.
FIGURE 2-18: Supply Current vs.
Frequency.
0
20
40
60
80
100
120
140
160
100 1000 10000
Capacitive Load (pF)
Supply Current (mA)
VDD = 18V
1 MHz
500 kHz
200 kHz
100 kHz
50 kHz
0
10
20
30
40
50
60
70
80
90
100 1000 10000
Capacitive Load (pF)
Supply Current (mA)
VDD = 12V
1 MHz
500 kHz
200 kHz
100 kHz
50 kHz
0
5
10
15
20
25
30
35
40
100 1000 10000
Capacitive Load (pF)
Supply Current (mA)
VDD = 6V 1 MHz
500 kHz
200 kHz
100 kHz
50 kHz
0
20
40
60
80
100
120
140
10 100 1000
Frequency (kHz)
Supply Current (mA)
VDD = 18V 10,000 pF
6,800 pF
3
,300 pF
1,000 pF
470 pF
0
20
40
60
80
100
120
100 1000 10000
Frequency (kHz)
Supply Current (mA)
V
DD = 12V 10,000 pF
6,800 pF
3,300 pF
1,000 pF
470 pF
0
10
20
30
40
50
60
100 1000 10000
Frequency (kHz)
Supply Current (mA)
VDD = 6V 10,000 pF
6,800 pF
3,300 pF
1,000 pF
470 pF
MCP1415/16
DS22092E-page 8 2008-2012 Microchip Technology Inc.
Note: Unless otherwise indicated, TA = +25°C with 4.5V VDD = 18V.
FIGURE 2-19: Output R esistance (Output
High) vs. Supply Voltage.
FIGURE 2-20: Output R esistance (Output
Low) vs. Supply Voltage.
FIGURE 2-21: Cros so ve r Energy vs .
Supply Voltage.
0
5
10
15
20
25
30
4 6 8 1012141618
Supply Voltage (V)
ROUT-HI (Ω)
TA = +125°C
VIN = 0V (MCP1415)
VIN
= 5V (MCP1416)
A = +25°C
0
5
10
15
20
25
4 6 8 1012141618
Supply Voltage (V)
ROUT-LO (Ω)
TA = +125°C
VIN = 5V (MCP1415)
VIN
= 0V (MCP1416)
TA = +25°C
1E-10
1E-09
1E-08
1E-07
4 6 8 1012141618
Supply Voltage (V)
Crossover Energy (A*sec)
2008-2012 Microchip Technology Inc. DS22092E-page 9
MCP1415/16
3.0 PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 3-1.
3.1 Supply Input (VDD)
VDD is the bias su pply input for the M OSFET driver and
has a voltage range of 4.5V to 18V. This input must be
decoupled to ground with a local capacitor . This bypass
capacitor provides a localized low impedance path for
the peak currents that are to be provided to the load.
3.2 Control Input (IN)
The MOSFET driver input is a high impedance, TTL/
CMOS compatible input. The input also has hysteresis
betwee n the hig h and low i nput leve ls, allo wing the m to
be driven from a slow rising and falling signals, and to
provide noise immunity.
3.3 Ground (GND)
Ground is th e d ev ic e re turn pi n. The gro und pin sh ould
have a low impedance connection to the bias supply
source return. High peak currents will flow out the
ground pin when the capacitive load is being
discharged.
3.4 Output (OUT)
The output is a CMOS push-pull output that is capable
of sourcing and sinking 1.5A of peak current
(VDD = 18V). The low output impedance ensures the
gate of the external MOSFET will stay in the intended
state even durin g large trans ient s. Th is out put also has
a reverse current latch-up rating of 500 mA.
TABLE 3-1: PIN FUNCTION TABLE
SOT-23-5 Symbol
Description
Pin MCP1415/6 MCP1415R/6R
1 NC NC No Connection
2V
DD GND Supply Input
3 IN IN Control Input
4GNDOUTGround
5OUTV
DD Output
MCP1415/16
DS22092E-page 10 2008-2012 Microchip Technology Inc.
4.0 APPLICATION INFORMATION
4.1 General Information
MOSFET drivers are high-speed, high current devices
which are intended to source/sink hi gh peak current s to
charge/discharge the gate capacitance of external
MOSFETs o r IGBTs. In high frequenc y switch ing po wer
supplies, the PWM controller may not have the drive
capability to directly drive the power MOSFET. A
MOSFET driver like the MCP1415/16 family can be
used to provide additional source/sink current
capability.
4.2 MOSFET Driver Timing
The abil ity of a MOSFET driver to transition from a fully-
off state to a fully-on state are characterized by the
drivers rise time (tR), fall time (tF), and propagation
delays (tD1 and tD2). Th e MCP1415/1 6 family of dri vers
can typically charge and discharge a 1000 pF load
capacitance in 20 ns along with a typical turn on (tD1)
propagation delay of 41 ns. Figure 4-1 and Figure 4-2
show the test circuit and timing wavef orm used to v erify
the MCP1415/16 timing.
FIGURE 4-1: Inverting Driver Timing
Waveform.
FIGURE 4-2: Non-Inverting Driver Timing
Waveform.
4.3 Decoupling Capacitors
Careful layout and decoupling capacitors are required
when using power MOSFET drivers. Large current are
required to charge and discharge capacitive loads
quickly. For example, approximately 720 mA are
needed to charge a 1000 pF load with 18V in 25 ns.
To operate the MOSFET driver over a wide frequency
range w ith l ow supply im pe da nce , a ceram ic a nd a l ow
ESR film capacitor are recommended to be placed in
paral lel between the drive r VDD and GND. A 1. 0 µF low
ESR film capacitor and a 0.1 µF ceramic capacitor
placed between pins 2 and 4 is required for reliable
oper at ion . T hes e ca pac it o rs sh ou ld be p la c ed c lo se t o
the driver to minimize circuit board parasitics and
provide a local source for the required current.
0.1 µF
+5V
10%
90%
10%
90%
10%
90%
18V
1µF
0V
0V
MCP1415
CL = 1000 pF
Input
Input
Output
tD1 tFtD2
Output
tR
VDD = 18V
Ceramic
90%
Input
tD1 tF
tD2
Output tR
10%
10% 10%
+5V
18V
0V
0V
90%
90%
0.1 µF
1µF
MCP1416
CL = 1000 pF
Input Output
VDD = 18V
Ceramic
2008-2012 Microchip Technology Inc. DS22092E-page 11
MCP1415/16
4.4 Power Dissipation
The tot al internal power dissipation in a MOSFET driver
is the summation of three separate power dissipation
elements.
EQUATION 4-1:
4.4.1 CAPACITIVE LOAD DISSIPATION
The power dissipation caused by a capacitive load is a
direct function of the frequency, total capacitive load,
and supply voltage. The power lost in the MOSFET
driver fo r a com plete c hargin g and di scha rging c ycle of
a MOSFET is shown in Equation 4-2.
EQUATION 4-2:
4.4.2 QUIESCENT POWER DISSIPATION
The power dissipation associated with the quiescent
current draw depends upon the state of the input pin.
The MCP1415/16 devices have a quiescent current
draw when the input is high of 0.65 mA (typical) and
0.1 mA (typical) when the input is low. The quiescent
power dissipation is shown in Equation 4-3.
EQUATION 4-3:
4.4.3 OPERATI NG POWER DISSIPATION
The operating power dissipation occurs each time the
MOSFET driver output transitions because for a very
short peri od of tim e bot h MO SFETs in the out put s t ag e
are on simultaneously. This cross-conduction current
leads to a power dissipation describe in Equation 4-4.
EQUATION 4-4:
4.5 PCB Layout Considerations
Proper PCB layout is important in high current, fast
switching circuits to provide proper device operation
and robustness of design. Improper component
placement may cause errant switching, excessive
volt age ring ing, or c ircuit lat ch-up. PCB tra ce loo p area
and inductance must be minimized. This is
accom plished by placing the MO SFET drive r directl y at
the load a nd placing the byp ass capacitor directly at the
MOSFET driver (Figure 4-3). Locating ground planes
or ground return traces directly beneath the driver
output signal also reduces trace inductance. A ground
plane w ill also help as a radiated noise shie ld as we ll as
providing some heat sinking for power dissipated within
the device (Figure 4-4).
FIGURE 4-3: Recommended PCB Layout
(TOP).
FIGURE 4-4: Recommended PCB Layout
(BOTTOM).
PTPLPQPCC
++=
Where:
PT= Total power dissipation
PL= Load power dissipation
PQ= Q uiescent power dissipation
PCC = Operating power dissipation
PLfC
T
VDD2
=
Where:
f = Switching frequency
CT= Tota l load capacitance
VDD = MOSFET driver supply voltage
PQIQH DI
QL 1D–+VDD
=
Where:
IQH = Q uiescent current in the high
state
D = Duty cycle
IQL = Q uiescent current in the low
state
VDD = MOSFET driver supply voltage
PCC CC fVDD
=
Where:
CC = Cross-conduction constant
(A*sec)
f = Switching frequency
VDD = MOSFET driver supply voltage
MCP1415/16
DS22092E-page 12 2008-2012 Microchip Technology Inc.
5.0 PACKAGING INFORMATION
5.1 Package Marking Information
Legend: XX...X Customer-specific information
Y Year code (last digit of calendar year)
YY Year code (last 2 digits of calendar year)
WW Week code (week of January 1 is week ‘01’)
NNN Alphanu meric tracea bil ity code
Pb-free JEDEC designator for Matte Ti n (Sn)
*This package is Pb-f ree. The Pb-f ree JEDEC designator ( )
can be found on the outer packaging for this package.
Note: In the even t the full M icroc hip p art numb er cann ot be mark ed on one line, it w ill
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.
3
e
3
e
5-Lead SOT-23 Example
1
Standard Markings for SOT-23
Part Number Code
MCP1415T-E/OT FYNN
MCP1416T-E/OT FZNN
MCP1415RT-E/OT F7NN
MCP1416RT-E/OT F8NN
XXNN
1
FYNN
2008-2012 Microchip Technology Inc. DS22092E-page 13
MCP1415/16
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/HDG:LGWK E  ± 
φ
N
b
E
E1
D
123
e
e1
A
A1
A2 c
L
L1
0LFURFKLS 7HFKQRORJ\ 'UDZLQJ &%
MCP1415/16
DS22092E-page 14 2008-2012 Microchip Technology Inc.
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
2008-2012 Microchip Technology Inc. DS22092E-page 15
MCP1415/16
APPENDIX A: REVISION HISTORY
Revision E (May 2012)
The following is the list of modifications:
Updated the Electrostatic Discharge (ESD) value to
300V (MM).
Revision D (December 2010)
The following is the list of modifications:
1. Updated Figure 2-19 and Figure 2-20.
2. Updated the package out line drawings.
Revision C (December 2008)
The following is the list of modifications:
Added the MCP1415R/16R devices throughout the
document.
Revision B (June 2008)
The following is the list of modifications:
1. DC Characteristics table, Switching Time, Rise
Time: changed from 13 to 20.
2. DC Characteristics table, Switching Time, Fall
Time: changed from 13 to 20.
3. DC Characteristics (Over Operating Tempera-
ture Range) table, Switching Time, Rise Time:
changed maximum from 35 to 40.
4. DC Characteristics (Over Operating Tempera-
ture Range) table, Switching Time, Rise Time:
changed typical from 25 to 30.
5. DC Characteristics (Over Operating Tempera-
ture Range) table, Switching Time, Fall Time:
changed maximum from 35 to 40.
6. DC Characteristics (Over Operating Tempera-
ture Range) table, Switching Time, Fall Time:
changed typical from 25 to 30.
Revision A (June 2008)
Original release of this document.
MCP1415/16
DS22092E-page 16 2008-2012 Microchip Technology Inc.
NOTES:
2008-2012 Microchip Technology Inc. DS22092E-page 17
MCP1415/16
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
PART NO. -X /XX
PackageTemperature
Range
Device
Device: MCP1415T: 1.5A MOSFET Driver, Inverting
(Tape and Ree l)
MCP1415RT:1.5A MOSFET Driver, Inverting
(Tape and Ree l)
MCP1416T: 1.5A MOSFET Driver, Non-Inverting
(Tape and Ree l)
MCP1416RT:1.5A MOSFET Driver, Non-Inverting
(Tape and Ree l)
Temper atu re R ang e: E = -40C to +125C
Package: * OT = Plastic Thin Small Outline Transistor (OT), 5-Lead
* All package offerings are Pb Free (Lead Free)
Examples:
a) MCP1415T-E/OT: 1.5A Inverting,
MOSFET Driver
5LD SOT-23 Package
b) MCP1415RT-E/OT: 1.5A Inverting,
MOSFET Driver
5LD SOT-23 Package
a) MCP1416T-E/OT: 1.5A Non-Inverting,
MOSFET Driver
5LD SOT-23 Package
b) MCP1416RT-E/OT: 1.5A Non-Inverting,
MOSFET Driver
5LD SOT-23 Package
MCP1415/16
DS22092E-page 18 2008-2012 Microchip Technology Inc.
NOTES:
2008-2012 Microchip Technology Inc. DS22092E-page 19
Information contained in this publication regarding device
applications and t he lik e is provid ed only f or your c on ve nience
and may be supersed ed by u pdates. I t is your r es ponsibility to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR
WARRANTIES OF ANY KIND WHETHER EXPRESS OR
IMPLIED, WRITTEN OR ORAL, STATUTORY OR
OTHERWISE, RELATED TO THE INFORMATION,
INCLUDING BUT NOT LIMITED TO ITS CONDITION,
QUALITY, PERFORMANCE, MERCHANTABILITY OR
FITNESS FOR PURPOSE. Microchip disclaims all liability
arising from this information and its use. Use of Microchip
devices in life support and/or safety applications is entirely at
the buyer’s risk, and the buyer agrees to defend, indemnify and
hold harmless Microchip from any and all damages, claims,
suits, or expenses resulting from such use. No licenses are
conveyed, implicitly or otherwise, under any Microchip
intellectual property rights.
Trademarks
The Microchip name and logo, the Microchip logo, dsPIC,
KEELOQ, KEELOQ logo, MPLAB, PIC, PICmicro, PI CSTART,
PIC32 logo, rfPIC and UNI/O are registered trademarks of
Microchip Technology I ncorporat ed in the U.S.A. and other
countries.
FilterLab, Hampshire, HI-TECH C, Linear Active Thermistor,
MXDEV, MXLAB, SEEVAL and The Embedded Control
Solutions Company are registered trademarks of Microchip
Technology Incorporated in the U.S.A.
Analog-for-the-Digital Age, Application Maestro, chipKIT,
chipKIT logo, CodeGuard, dsPICDEM, dsPICDEM.net,
dsPICworks, dsSPEAK, ECAN, ECONOMONITOR,
FanSense, HI-TIDE, In-Circuit Serial Programming, ICSP,
Mindi, MiWi, MPASM, MPLAB Certified logo, MPLIB,
MPLINK, mTouch, Omniscient Code Generation, PICC,
PICC-18, PICDEM, PICDEM.net, PICkit, PICtail, REAL ICE,
rfLAB, Select Mode, Total Endurance, TSHARC,
UniWinDriver, WiperLock and ZENA are trademarks of
Microchip Technology I ncorporat ed in the U.S.A. and other
countries.
SQTP is a service mark of Microchip T echnology Incorporated
in the U.S.A.
All other trademarks mentioned herein are property of their
respective companies.
© 2008-2012, Microchip Technology Incorporated, Printed in
the U.S.A., All Rights Reserved.
Printed on recycled paper.
ISBN: 978-1-62076-110-6
Note the following details of the code protection feature on Microchip devices:
• Microchip products meet the specification contained in their particular Microchip Data Sheet.
• Microchip believes that its family of products is one of the most secure families of it s kind on the market today, when used in t he
intended manner and under normal conditions.
• There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
• Microchip is willing to work with the customer who is concerned about the integrity of their code.
• Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is c onstantly evolving. We a t Microc hip are co m mitted to continuously improving the code prot ect ion featur es of our
products. Attempts to break Microchip’ s code protection feature may be a violation of the Digital Mill ennium Copyright Act. If such act s
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Microchip received ISO/TS-16949:2009 certification for its worldwide
headquarters, design and wafer fabrication facilities in Chandler and
Tempe, Arizona; Gresham, Oregon and design centers in California
and India. The Company’s quality system processes and procedures
are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping
devices, Serial EEPROMs, microperiph erals, nonvolatile memory and
analog products. In addition, Microchip’s quality system for the design
and manufacture of development systems is ISO 9001:2000 certified.
QUALITY MANAGEMENT S
YSTEM
CERTIFIED BY DNV
== ISO/TS 16949 ==
DS22092E-page 20 2008-2012 Microchip Technology Inc.
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