DISCRETE SEMICONDUCTORS DATA Sir BLV2048 = =I UHF push-pull power transistor Preliminary specification Gi 1999 Apr 23 PHILIPSPhilips Semiconductors meena eee eee UHF push-pull power transistor Preliminary specification BLV2048 FEATURES profile Emitter ballasting resistors for optimum temperature Gold metallization ensures excellent reliability Internal input and output matching for an easy design of wideband circuits. AIN substrate package for environmental safety Linear amplification with low distortion Low spectral regrowth in multichannel power amplifiers according to IS-95. APPLICATIONS Common emitter class-AB operation in base stations for PCN (Personal Communication Network): 1805 - 1880 MHz and PCS (Personal Communication Services): 1910 - 1990 MHz. DESCRIPTION PINNING - SOT494A PIN SYMBOL DESCRIPTION 1 c collector 1 2 c collector 2 3 b base 1 4 b base 2 5 e emitter, connected to flange 1 2 a a Top view L_tL_ > Fig.1 Simplified outline. MBK202 NPN silicon planar push-pull power transistor in a 4-lead AIN SOT494A flange package with two ceramic caps. The emitters are connected to the flange. QUICK REFERENCE DATA RF performance at Tp, = 25 C in a common emitter test circuit. MODE OF f VceE PL Gp Ne dim OPERATION (MHz) (V) (W) (dB) (%) (dBc) CW, class-AB 2000 26 120 28 240 - 2-tone, class-AB | fy = 2000.0; fo = 2000.1 26 120 (PEP) 28.5 233 <-28 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134) Per section unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VoBo collector-base voltage open emitter - 65 Vv VoEo collector-emitter voltage open base - 27 Vv VEBo emitter-base voltage open collector - 3 Vv Io collector current (DC) - 20 A Iovav) average collector current - 10 A Prot total power dissipation Tmb = 25 C - 415 Ww Tstg storage temperature 65 +150 C Tj operating junction temperature - 200 C 1999 Apr 23 2Philips Semiconductors Preliminary specification UHF push-pull power transistor BLV2048 THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE | UNIT Ri j-h thermal resistance from junction to PL = 120 W(PEP); Ty = 40C; note 1: <0.6 K/W heatsink total device; both sections equally loaded Rth mb-h thermal resistance from mounting 0.2 K/W base to heatsink Note 1. Thermal resistance is determined under nominal 2-tone RF operating conditions. CHARACTERISTICS Tj = 25 C; per section; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. | UNIT ViBR)CBO collector-base breakdown voltage | open emitter; lo =40 mA 65 - - Vv V(BR)CEO collector-emitter breakdown open base; lc = 120 mA 27 - - Vv voltage V(BR)EBO emitter-base breakdown voltage open collector; lz = 40 mA 3 - - Vv Ices collector leakage current Voce = 26 V; Veg = 0 - - 8 mA hee DC current gain VoeE=10Vi Ic =4A 45 - 100 Ce collector capacitance Vos = 26 V; le = ig = 0; - 72 - pF f= 1 MHz; note 1 Cre feedback capacitance Voe = 26 V; Ie = 0; f= 1 MHz | 41 - pF Note 1. Capacitance of die only. 1999 Apr 23Philips Semiconductors Preliminary specification UHF push-pull power transistor BLV2048 Voge = 10 V. Fig.2 DC current gain as a function of collector current (per section); typical values. MBK397 160 re (PF) 120 \ 80 N 40 Vos (V) f=1 MHz. Fig.3 Feedback capacitance as a function of collector-base voltage (per section); typical values. 1999 Apr 23Philips Semiconductors Preliminary specification UHF push-pull power transistor BLV2048 APPLICATION INFORMATION RF performance at T, = 25 C in a common emitter test circuit; bias circuit: Rj = 0.2 Q. MODE OF f Vee leq PL Gp Ne dim ACP OPERATION (MHz) (V) (mA) (W) (dB) (%) (dBc) (dBc) CW, class-AB 2000 26 2x300 120 28 >40 - - 2-tone, class-AB | f; = 2000.0; fo = 2000.1 26 2x300 | 120(PEP)| 28.5 233 <28 - 46 CDMA, class-AB 2000 26 2x500 25 typ. 9 | typ. 22 - (note 1) Notes 1. CDMA testsignal with peak to average ratio of 11.9 dB. ACP is measured at +/- 885 kHz offset from the centre of the channel (2000 MHz) using a spectrum analyzer witha resolution set to 30 kHz Ruggedness in class-AB operation The BLV2048 is capable of withstanding a load mismatch corresponding to VSWR = 3: 1 through all phases under the following conditions: fy = 2000.0 MHz; fo = 2000.1 MHz; Vce = 26 V; Iog = 2 x 300 mA; P_ = 120 W (PEP); Tmp = 25 C. 60 Ne (%) 50 40 30 20 0 0 20 40 60 80 100 120 140 Pt (W) (1) log = 2x300 mA (2) loa = 2x100 mA (3) loa = 2x50 mA Veg = 26 V; R1 = R2 =0; f= 2000 MHz Fig.4 Power gain and collector efficiency as a function of load power; typical values. 60 Ne (%) 50 Gp (dB) 10 40 30 20 0 0 20 40 60 80 100 120 140 Pr (W) (1) log = 2x300 mA (2) loa = 2x100 mA (3) loa = 2x50 mA Vog = 26 V; Rt = R2 = 2.4 Q;f = 2000 MHz Fig.5 Power gain and collector efficiency as a function of load power; typical values. 1999 Apr 23Philips Semiconductors Preliminary specification UHF push-pull power transistor BLV2048 160 PL (1) (W) at Ce 120 o4 (3} LE 80 LL Ye [ 40 Y J 0 0 4 8 12 16 20 Pp (W) (1) Vee = 28 V (2) Voce = 26 V (3) Voce = 24 V log = 2x50 mA; R1 = R2 =0; f = 2000 MHz Fig.6 Load power as a function of drive power; typical values. 160 PL 120 go \ \ 80 fi. 0 0 4 ao np o 20 Po (W) 1) loa = 2x300 mA 2) leq = 2x100 mA 3) loa = 2x50 mA Voce = 26 V: R1 = R2 = 2.4.0; f= 2000 MHz ( ( ( Fig.7 Load power as a function of drive power; typical values. 12 60 Gp Nc (dB) (%) 10 50 8 40 6 30 4 20 2 10 0 0 0 40 80 120 160 P. (PEP) (W) 1) loa = 2x300 mA 2) loa = 2x100 mA 3) loa = 2x50 mA Vee = 26 V; R1 = R2 = 0; fy = 2000 MHz; fo = 2000.1 MHz ( ( ( Fig.8 Power gain and collector efficiency as a functions of peak envelope load power; typical values. 60 Ne (%) 50 40 30 20 0 0 40 80 120 160 P, (PEP) (W) log = 2x300 MA; Voce = 26 V; R1 = R2 =2.4Q; fy = 2000 MHz; fo = 2000.1 MHz Fig.9 Power gain and collector efficiency as a function of peak envelope load power; typical values. 1999 Apr 23Philips Semiconductors Preliminary specification UHF push-pull power transistor BLV2048 160 P (PEP) (1) (2) @) (W) Y 120 ZL SAC QA aN 80 Ws 40 ye 4 0 0 2 4 6 8 10 Pp (PEP) (W) (1) log = 2x300 mA (2) leq = 2x100 mA (3) loa = 2x50 mA Voce = 26 V; R1 = R2 =0; fy = 2000 MHz; fo = 2000.1 MHz Fig.10 Peak envelope load power as a function of peak envelope drive power; typical values. O 60 (ip? 2 (P EP) LE (W) 120 Ly a AWN 80 JE Y 40 0 / 0 2 4 6 8 10 Pp (PEP) (W) (1) Vog = 28 V (2) Vog = 26 V (3) Vog = 24V log = 2x300 mA; R1 = R2 = 2.4 Q; fy = 2000 MHz; fo = 2000.1 MHz Fig.11 Peak envelope load power as a function of peak envelope drive power; typical values. (dBc) 290 HY 2 Lf \ \\ \ -60 0 40 80 120 160 P_ (PEP) (W) (1) loa = 2x50 mA (2) loa = 2x100 mA (3) log = 2x300 mA Vee = 26 V; R1 = R2 = 0; fy = 2000 MHz; fo = 2000.1 MHz Fig.12 Intermodulation distortion as a function of peak envelope load power; typical values. 0 ds (dBc) -20 | > - va SZ ] | -40 -60 0 40 80 120 160 PL (PEP) (W) (1) leq = 2x100 mA (2) loa = 2x300 mA (3) loa = 2x500 mA Veg = 26 V; Rt = R2 = 2.4.0; fy = 2000 MHz; fp = 2000.1 MHz Fig.13 Intermodulation products as a function of peak envelope load power; typical values. 1999 Apr 23Philips Semiconductors Preliminary specification UHF push-pull power transistor BLV2048 0 dim (dBc) -20 dg NN A NN, | ds 40 NS ren -60 0 40 80 120 160 PL (PEP) (W) log = 2x100 mA; Vce = 26 V; R1 = R2 =0; fy = 2000 MHz; fo = 2000.1 MHz Fig.14 Intermodulation products as a function of peak envelope load power; typical values. dim (dBe) -20 dg \/ -40 |a -60 0 40 80 120 PL 160 (PEP) (W) log = 2x300 MA; Voce = 26 V; R1 = R2 =2.4Q; fy = 2000 MHz; fo = 2000.1 MHz Fig.15 Intermodulation products as a function of peak envelope load power; typical values. 0 0.76 dg VBE (dBc) (V) -20 0.72 N L 0.68 om -40 |7 (_/ -60 0.64 0 40 80 120 160 P. (PEP) (W) log = 2x300 MA; Vce = 26 V; R1 = R2 =0; fy = 2000 MHz; fo = 2000.1 MHz Fig.16 Minimal intermodulation and corresponding Vee as a function of peak envelope load power; typical values. ACP (dBe) -20 -40 -60 PL (W) log = 2x500MA; Vce = 26 V; R1 = R2 = 2.40; Measured at 885 kHz offset with 30 kHz bandwidth CDMA testsignal with 11.9 dB peak to average ratio Fig.17 Adjacent channel power as a function of the load power; typical values. 1999 Apr 23Philips Semiconductors Preliminary specification UHF push-pull power transistor BLV2048 0 Return Be) PCN iC N\ ~\ oO] wl VA : V -60 1800 1850 1900 1950 2000 # (MHz) Voce = 26 V; Ioq = 2x300 mA; PL = 120 W; R1 = R2 = 0; Optimized for respectively the PCN-band and PCS-band Fig.18 Input return losses as a function of frequency; typical values. 12 60 Gp Nc (dB) (%) 10 50 8 40 6 30 4 20 2 10 0 0 1800 1850 1900 1950 2000 # (MHz) (1) Input tuned for minimal return losses (2) Input tuned at 1.95 GHz VoeE = 26 V; log = 2x300 mA; PL = 120 W (PEP) Fig.19 Power gain and collector efficiency as a functions of frequency; typical values. MBK403 0 1700 1800 1900 2000 f (MHz) Voce = 26 V; Icq = 2x300 mA; PL = 120 W (total device); Timp = 25 C. Fig.20 Inputimpedance per section as a function of frequency (series components); typical values. MBK404 1700 1800 1900 2000 # (MHz) Voce = 26 V; Icq = 2x300 mA; PL = 120 W (total device); Tb = 25 C. Fig.21 Load impedance per section as a function of frequency (series components); typical values. 1999 Apr 23Philips Semiconductors Preliminary specification UHF push-pull power transistor BLV2048 15 oa OQ O Ss I oO Lm + CO , + CO uy _ NS Ch it CO a co oN C it I a oo NI a) = <b N ne - Ce . N = = O OQ Oo al 8 S e Oo D & 7) co Oe g oO & AAMT Oo N N a _ > [ ss o Ww uy Oo i <C) < a) f _I | oO O O- Ww aD Ce 7 C3 w oO on) QD oS + Ss) YS 2 + E ! 4 = So I oa 1999 Apr 23 10Philips Semiconductors Preliminary specification UHF push-pull power transistor BLV2048 List of components COMPONENT DESCRIPTION VALUE DIMENSIONS | CATALOGUE NO. C1, C2, C13, multilayer ceramic chip capacitor; note 1. | 10 pF C17, C21, C22 C3, C4, C19, | Tekelec variable capacitor; type 37271 0.6 to 4.5 pF C20 C5, C9, C14, multilayer ceramic chip capacitor; note 1 10 nF C23 C6, C10, C16, | tantalum SMD capacitor 10 uF, 35V C25 C7, C14 multilayer ceramic chip capacitor, note 2 | 100 pF C8, C12 multilayer ceramic chip capacitor, note2 | 18pF C18 multilayer ceramic chip capacitor; note 1 | 1.2 pF C15, C24 tantalum SMD capacitor 4.7 uF, 50V Li, L3, L28, stripline; note 3 30 Q length 16 mm; L30 width 2 mm L2, L29 semi-rigid cable 50 Q length 32 mm; width 2.2 mm L4L5, L9,L10 | stripline; note 3 25Q length 5 mm; width 2.68 mm L6, L11 stripline; note 3 12.59 length 5.8 mm; width 6.4 mm L7,L12 stripline; note 3 7.3Q length 10.6 mm; width 11.7 mm L8,L13 2 turns enamelled 1 mm copper wire 12 nH int.dia. 3 mm; length 4 mm L14, L23 stripline; note 3 43.7 Q length 12.5 mm; width 1 mm L15, L19 stripline; note 3 5.9Q length 6.5 mm; width 15 mm L16, L20 stripline; note 3 5.9Q length 5 mm; width 15 mm L17, L21 stripline; note 3 9.5Q length 2.5 mm; width 8.8 mm L18, L22 stripline; note 3 25Q length 16 mm; width 2.68 mm L24, L25, L26, | grade 4B1 ferroxcube chip-bead 4322 020 34420 L27 Ri, R2 SMD resistor 2.40 type PRC201 R83, R4 SMD resistor 100 type 0608 Notes 1. American Technical Ceramics type 100B or capacitor of same quality. 2. American Technical Ceramics type 100A or capacitor of same quality. 3. The striplines are on a double copper-clad printed-circuit board with Teflon dielectric (e, = 6.15); thickness 0.64 mm. 1999 Apr 23 11Philips Semiconductors Preliminary specification UHF push-pull power transistor BLV2048 4() 4() af 7 U +Vbias \ / +Vc 60 O O 4c! | Z) o 8 o/ FIET) = C0 25 gli 0 : 128 500hm / coffee IP] 500hm Lip 116 L17 118 oH , Input Toe 7 f _ Output C21 oO Re u30) D2} C22 C\\b26 0 oO oo BO Se, rei) C2 m4 O o LING +Vbias \ +e The components are situated on one side of the copper-clad Teflon board, the other side is unetched and serves as a ground plane. Earth connections from the component side to the ground plane are made by through metallization. Fig.23 Component layout for 2000 MHz class-AB test circuit. 1999 Apr 23 12Philips Semiconductors Preliminary specification UHF push-pull power transistor BLV2048 PACKAGE OUTLINE Flanged double-ended ceramic (AIN) package; 2 mounting holes; 4 leads SOT494A D i A 1 rf JF < Dy Uy me [8] a +o - , -;- EROE | | | 4 ( | 2 1 1 J | f f | | 4 i H Us } - +- - -4- - - p Ey +E | [i | | Fr | felyi@lale| 3 ' im 3 i | p> +|~- Ep @) el ale _[e}_+ 0 5 10mm re | scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c D Dy E Ej e F H Hy p Q q Uy Up w4 Wo W3 5.26 |11.81 | 0.15 | 33.96 | 31.37 | 10.26 | 10.29 1.66 | 16.74] 27.81] 3.30 | 2.21 41.28 | 10.29 mm | 460 |11.56| 0.10 | 28.02 | 30.61 | 10.06| 10.03 | 15-75) 4-60 | 16.48 | 27.05| 3.05 | 2.06 | 297) 41-02} 10.03} O25 | O51 | 025 . 0.207 | 0.465 | 0.006 | 1.337 | 1.235 | 0.404 | 0.405 0.065 | 0.659 | 1.095 | 0.130 | 0.087 1.625 | 0.405 inches | 9 184 |0.455 | 0.004 | 1.103 | 1.205 | 0.396 | 0.395 | - | 0.063 | 0.649 | 1.065] 0.120] 0.081} 142 | 1.615] 0.3905) 0-07 | 002 | 0.01 OUTLINE REFERENCES EUROPEAN ISSUE DATE VERSION IEC JEDEC EIAJ PROJECTION SOT4S4A -} 99-08-30 1999 Apr 23 13Philips Semiconductors Preliminary specification UHF push-pull power transistor BLV2048 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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