Si4416DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.018 @ VGS = 10 V 9.0 0.028 @ VGS = 4.5 V 7.3 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S Ordering Information: Si4416DY Si4416DY-T1 (with Tape and Reel) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Drain-Source Voltage VDS 30 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 150_C)a TA = 25_C TA = 70_C Pulsed Drain Current (10 ms Pulse Width) IS TA = 25_C TA = 70_C Operating Junction and Storage Temperature Range PD V 6.9 7.5 IDM Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa 9.0 ID 5.6 A 50 2.1 1.2 2.5 1.4 1.6 0.9 TJ, Tstg Unit W _C - 55 to 150 THERMAL RESISTANCE RATINGS Parameter Symbol t v 10 sec M i Maximum JJunction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) Steady-State Steady-State RthJA RthJF Typ Max 40 50 72 90 16 20 Unit _C/W C/W Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 72266 S-31062--Rev. E, 26-May-03 www.vishay.com 1 Si4416DY Vishay Siliconix MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min 1 Typa Max Unit "100 nA Static VGS(th) VDS = VGS, ID = 250 mA Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V Zero Gate Voltage Drain Current IDSS On-State Drain Currentb ID(on) Gate Threshold Voltage Drain Source On-State Drain-Source On State Resistanceb Forward Transconductanceb VDS = 24 V, VGS = 0 V 1 VDS = 24 V, VGS = 0 V, TJ = 55_C 25 VDS w 5 V, VGS = 10 V rDS(on) DS( ) mA 20 A VGS = 10 V, ID = 9.0 A 0.012 0.018 VGS = 4.5 V, ID = 7.3 A 0.019 0.028 23 gfs VDS = 15 V, ID = 9.0 A VSD IS = 2.1 A, VGS = 0 V Gate Charge Qg VDS = 15 V, VGS = 5 V, ID = 9.0 A Total Gate Charge Qgt Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Diode Forward Voltageb V W S 1.2 V Dynamica Turn-On Delay Time Rise Time Turn-Off Delay Time 14 20 24 35 nC 4.5 VDS = 15 V,, VGS = 10 V,, ID = 9.0 A 5.9 0.2 1.0 2.4 td(on) 16 20 tr 10 20 34 50 13 20 50 90 VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, RG = 6 W td(off) Fall Time tf Source-Drain Reverse Recovery Time trr IF = 2.1 A, di/dt = 100 A/ms W ns Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 50 50 VGS = 10 thru 5 V 40 I D - Drain Current (A) I D - Drain Current (A) 40 4V 30 20 10 30 20 TC = 125_C 10 25_C 3V - 55_C 0 0 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) www.vishay.com 2 5 0 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) Document Number: 72266 S-31062--Rev. E, 26-May-03 Si4416DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current Capacitance 1800 1500 0.08 C - Capacitance (pF) r DS(on) - On-Resistance ( W ) 0.10 0.06 0.04 VGS = 4.5 V Ciss 1200 900 600 Coss 0.02 300 VGS = 10 V Crss 0.00 0 0 10 20 30 40 50 0 5 Gate Charge 20 25 30 On-Resistance vs. Junction Temperature 10 1.6 VDS = 15 V ID = 9 A 8 r DS(on) - On-Resistance (W) (Normalized) V GS - Gate-to-Source Voltage (V) 15 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) 6 4 2 0 0 5 10 15 20 1.4 1.2 1.0 0.8 0.6 - 50 25 VGS = 10 V ID = 9 A - 25 0 Qg - Total Gate Charge (nC) Source-Drain Diode Forward Voltage 50 75 100 125 150 On-Resistance vs. Gate-to-Source Voltage 0.10 r DS(on) - On-Resistance ( W ) TJ = 150_C 10 TJ = 25_C 0.08 0.06 ID = 9 A 0.04 0.02 0.00 1 0.00 25 TJ - Junction Temperature (_C) 60 I S - Source Current (A) 10 0.2 0.4 0.6 0.8 VSD - Source-to-Drain Voltage (V) Document Number: 72266 S-31062--Rev. E, 26-May-03 1.0 1.2 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) www.vishay.com 3 Si4416DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage Single Pulse Power 0.4 50 0.2 40 - 0.0 Power (W) V GS(th) Variance (V) ID = 250 mA - 0.2 30 20 - 0.4 10 - 0.6 - 0.8 - 50 - 25 0 25 50 75 100 125 150 0 10 -2 10 -1 TJ - Temperature (_C) 1 10 100 600 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 72_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 www.vishay.com 4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10 Document Number: 72266 S-31062--Rev. E, 26-May-03