Data Sheet 1 Rev.1.4, 2013-07-26
Speed TEMPFET
BTS244Z
Speed TEMPFET®
®®
®
N-Channel
Enhancement mode
Logic Level Input
Analog driving possible
Fast switching up to 1 MHz
Potential-free temperature sensor with
thyristor characteristics
Overtemperature protection
Avalanche rated
5
Type V
DS
R
DS(on)
Package
BTS244Z
E3062A 55 V 13 m P
G-TO
263-5-2
PG-TO220-5-
1
2
Temperature
Sensor
G
Pin 1
A
Pin 2
D
Pin 3 and TAB
K
Pin 4
S
Pin 5
Pin Symbol Function
1 G Gate
2 A Anode Temperature Sensor
3 D Drain
4 K Cathode Temperature Sensor
5 S Source
•Green Product (RoHS Compliant)
•AEC Qualified
11
5
BTS244Z E3043
PG-TO220-5-12
PG-TO263-5-2
Speed TEMPFET
BTS244Z
Data Sheet 2 Rev.1.4, 2013-07-26
Maximum Ratings
Parameter Symbol Value Unit
Drain source voltage V
DS
55 V
Drain-gate voltage,R
GS
= 20 kV
DGR
55
Gate source voltage V
GS
20
Nominal load current (ISO 10483)
V
GS
= 4.5 V, V
DS
0.5 V, T
C
= 85 °C
V
GS
= 10 V, V
DS
0.5 V, T
C
= 85 °C
I
D(ISO)
19
26
A
Continuous drain current
1)
T
C
= 100 °C, V
GS
= 4.5V
I
D
35
Pulsed drain current I
D
p
uls
188
Avalanche energy, single pulse
I
D
= 19 A, R
GS
= 25
E
AS
1.65 J
Power dissipation
T
C
= 25 °C
P
tot
170 W
Operating temperature
2)
T
j
-40 ...+175 °C
Peak temperature ( single event ) T
jp
eak
200
Storage temperature T
st
g
-55 ... +150
DIN humidity category, DIN 40 040 E
IEC climatic category; DIN IEC 68-1 40/150/56
1current limited by bond wire
2Note: Thermal trip temperature of temperature sensor is below 175°C
Data Sheet 3 Rev.1.4, 2013-07-26
Speed TEMPFET
BTS244Z
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
junction - case: R
thJC
- - 0.88 K/W
Thermal resistance @ min. footprint R
th
JA
- - 62
Thermal resistance @ 6 cm
2
cooling area
1)
R
th
JA
- 33 40
Electrical Characteristics
Parameter Symbol Values Unit
at T
j
= 25°C, unless otherwise specified min. typ. max.
Static Characteristics
Drain-source breakdown voltage
V
GS
= 0 V, I
D
= 0.25 mA
V
(BR)DSS
55 - - V
Gate threshold voltage, V
GS
= V
DS
I
D
= 130 μA
I
D
= 250 μA
V
GS(th)
1.2
-
1.6
1.65
2
-
Zero gate voltage drain current
V
DS
= 50 V, V
GS
= 0 V, T
j
= -40 °C
V
DS
= 50 V, V
GS
= 0 V, T
j
= 25 °C
V
DS
= 50 V, V
GS
= 0 V, T
j
= 150 °C
I
DSS
-
-
-
-
0.1
-
0.1
1
100
μA
Gate-source leakage current
V
GS
= 20 V, V
DS
= 0 V, T
j
= 25 °C
V
GS
= 20 V, V
DS
= 0 V, T
j
= 150 °C
I
GSS
-
-
10
20
100
100
nA
Drain-Source on-state resistance
V
GS
= 4.5 V, I
D
= 19 A
V
GS
= 10 V, I
D
= 19 A
R
DS(on)
-
-
16
11.5
18
13
m
1 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70μm thick) copper area for drain
connection. PCB mounted vertical without blown air.
Speed TEMPFET
BTS244Z
Data Sheet 4 Rev.1.4, 2013-07-26
Electrical Characteristics
Parameter Symbol Values Unit
at T
j
= 25°C, unless otherwise specified min. typ. max.
Dynamic Characteristics
Forward transconductance
V
DS
>2*I
D
*R
DS(on)max
, I
D
= 35 A
g
fs
25 - - S
Input capacitance
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
C
iss
- 2130 2660 pF
Output capacitance
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
C
oss
- 600 750
Reverse transfer capacitance
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
C
rss
- 320 400
Turn-on delay time
V
DD
= 30 V, V
GS
= 4.5 V, I
D
= 47 A,
R
G
= 2.2
t
d(on)
- 15 25 ns
Rise time
V
DD
= 30 V, V
GS
= 4.5 V, I
D
= 47 A,
R
G
= 2.2
t
r
- 70 105
Turn-off delay time
V
DD
= 30 V, V
GS
= 4.5 V, I
D
= 47 A,
R
G
= 2.2
t
d(off)
- 40 60
Fall time
V
DD
= 30 V, V
GS
= 4.5 V, I
D
= 47 A,
R
G
= 2.2
t
f
- 25 40
Gate Charge Characteristics
Gate charge at threshold
V
DD
= 40 V, I
D
= 0.1 A, V
GS
= 0 to 1 V
Q
g(th)
- 2.5 3.8 nC
Gate charge at 5.0 V
V
DD
= 40 V, I
D
= 47 A, V
GS
= 0 to 5 V
Q
g(5)
- 50 75
Gate charge total
V
DD
= 40 V, I
D
= 47 A, V
GS
= 0 to 10 V
Q
g(total)
- 85 130
Gate plateau voltage
V
DD
= 40 V, I
D
= 47 A
V
(plateau)
- 4.5 - V
Data Sheet 5 Rev.1.4, 2013-07-26
Speed TEMPFET
BTS244Z
Electrical Characteristics
Parameter Symbol Values Unit
at T
j
= 25°C, unless otherwise specified min. typ. max.
Reverse Diode
Inverse diode continuous forward current
T
C
= 25 °C
I
S
35 - - A
Inverse diode direct current,pulsed
T
C
= 25 °C
I
FM
188 - -
Inverse diode forward voltage
V
GS
= 0 V, I
F
= 94 A
V
SD
- 1.25 1.8 V
Reverse recovery time
V
R
= 30 V, I
F
=I
S
,di
F
/dt = 100 A/μs
t
rr
- 110 165 ns
Reverse recovery charge
V
R
= 30 V, I
F
=I
S
,di
F
/dt = 100 A/μs
Q
rr
- 0.23 0.35 μC
Sensor Characteristics
For temperature sensing, i.e. temperature protection, please consider application note
"Temperature sense concept - Speed TEMPFET”.
For short circuit protection please consider application note "Short circuit behaviour of
the Speed TEMPFET family”.
All application notes are available at http://www.infineon.com/tempfet/
Forward voltage
I
AK(on)
= 5 mA, T
j
= -40...+150 °C
I
AK(on)
= 1.5 mA, T
j
= 150 °C
V
AK(on)
-
-
1.3
-
1.4
0.9
V
Sensor override
t
P
= 100 μs, T
j
= -40...+150 °C
- - 10
Forward current
T
j
= -40...+150 °C
I
AK(on)
- - 5 mA
Sensor override
t
P
= 100 μs, T
j
= -40...+150 °C
- - 600
Speed TEMPFET
BTS244Z
Data Sheet 6 Rev.1.4, 2013-07-26
Electrical Characteristics
Parameter Symbol Values Unit
at T
j
= 25°C, unless otherwise specified min. typ. max.
Sensor Characteristics
Temperature sensor leakage current
T
j
= 150 °C
I
AK(off)
- - 4 μA
Min. reset pulse duration
1)
T
j
= -40...+150 °C, I
AK(on)
= 0.3 mA,
VAK
(
Reset
)
<0.5V
t
reset
100 - - μs
V
AK
Recovery time
1)2)
T
j
= -40...+150 °C, I
AK(on)
= 0.3 mA
t
recovery
- - 150
Characteristics
Holding current, V
AK(off)
= 5V
T
j
= 25 °C
T
j
= 150 °C
I
AK(hold)
0.05
0.05
-
-
0.5
0.3
mA
Thermal trip temperature
V
TS
= 5V
T
TS(on)
150 160 170 °C
Turn-off time (Pin G+A and K+S connected)
V
TS
= 5V, I
TS(on)
= 2 mA
t
off
0.5 - 2.5 μs
Reset voltage
T
j
= -40...+150°C
V
AK(reset)
0.5 - - V
Sensor recovery behaviour:
VAK [V ]
treset
trecovery
5
4
0
ON Reset OFFSensor
Sensor RESET
1See diagram Sensor recovery behaviour
2Time after reset pulse until VAK reaches 4V again
Data Sheet 7 Rev.1.4, 2013-07-26
Speed TEMPFET
BTS244Z
2 Drain current
I
D
= f(T
C
); V
GS
4.5V
0 20 40 60 80 100 120 140 °C 180
T
C
0
5
10
15
20
25
30
A
40
ID
1 Maximum allowable power dissipation
P
tot
= f(T
C
)
-40 0 40 80 120 °C 180
T
C
0
20
40
60
80
100
120
140
180
Ptot
3 Typ. transient thermal impedance
Z
thJA
=f(t
p
) @ 6 cm
2
cooling area
Parameter: D=t
p
/T
10 -5 10 -4 10 -3 10 -2 10 -1 10 010 110 3
s
t
p
-2
10
-1
10
0
10
1
10
2
10
K/W
Z
thJA
Single pulse
0.01
0.02
0.05
0.1
0.2
D=0.5
4 Transient thermal impedance
Z
thJC
= f(t
p
)
parameter : D=t
p
/T
10 -810 -710 -610 -510 -410 -310 -210 -110 010 110 3
s
t
p
-4
10
-3
10
-2
10
-1
10
0
10
1
10
K/W
Z
thJC
Single pulse
0.01
0.02
0.05
0.1
0.2
D=0.5
Speed TEMPFET
BTS244Z
Data Sheet 8 Rev.1.4, 2013-07-26
5 Safe operating area
I
D
=f(V
DS
); D=0.01; T
C
=25°C
ID
6 Typ. output characteristic
I
D
= f(V
DS
); T
j
=25°C
Parameter: V
GS
0 1 2 V4
V
DS
0
20
40
60
80
100
120
140
A
180
ID
3V
3.5V
4V
4.5V
5V
6V
7V
10V
7 On-state resistance
R
ON
= f(T
j
); I
D
=19A; V
GS
= 4.5V
-50 -25 0 25 50 75 100 125 °C 175
T
j
0
5
10
15
20
25
30
m
40
R
DS(on)
typ.
max.
8 On-state resistance
R
ON
= f(T
j
); I
D
=19A; V
GS
= 10V
-50 -25 0 25 50 75 100 125 °C 175
T
j
0
5
10
15
20
m
30
R
DS(on)
typ.
max.
Data Sheet 9 Rev.1.4, 2013-07-26
Speed TEMPFET
BTS244Z
9 Typ. transfer characteristics
I
D
= f(V
GS
); V
DS
= 12V; T
j
= 25°C
0 1 2 3 V5
V
GS
0
10
20
30
40
50
60
70
80
A
100
ID
10 Typ. input threshold voltage
V
GS(th)
= f(T
j
); V
DS
=V
GS
Parameter: I
D
-50 -25 0 25 50 75 100 125 °C 175
T
j
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
V
2.4
VGS(th)
130μA
1.3mA
13mA
130mA
11 Typ. capacitances
C = f(V
DS
); V
GS
=0 V, f=1 MHz
0 4 8 12 16 20 24 28 32 V40
V
DS
-1
10
0
10
1
10
nF
C
Ciss
Coss
Crss
12 Typ. forward charcteristics of
reverse diode I
F
= f(V
SD
)
t
p
= 80μs (spread); Parameter: T
j
0.0 0.2 0.4 0.6 0.8 1.0 1.2 V1.6
V
SD
-1
10
0
10
1
10
2
10
A
I
F
25°C
150°C
Speed TEMPFET
BTS244Z
Data Sheet 10 Rev.1.4, 2013-07-26
13 Typ. gate charge
V
GS
= f(Q
Gate
); I
D puls
= 47A
0 20 40 60 80 100 nC 140
Q
Gate
0
2
4
6
8
10
12
V
16
BTS 244 Z
VGS
0,8 VDS max
DS max
V
0,2
14 Drain-source break down voltage
V
(BR)DSS
= f(T
j
)
-40 0 40 80 120 °C 180
T
j
50
52
54
56
58
60
62
V
66
V
(BR)DSS
Data Sheet 11 Rev.1.4, 2013-07-26
Speed TEMPFET
BTS244Z
Package Outlines
1 Package Outlines
Figure 1 PG-TO263-5-2
Figure 2 PG-TO220-5-12
BA0.25 M
±0.2
GPT09062
10
8.5 1)
(15)
±0.2
9.25
±0.3
1
0...0.15
5 x 0.8 ±0.1
±0.1
1.27
4.4
B
0.5±0.1
±0.3
2.7
4.7
±0.5
±0.3
1.3
2.4
1.7
0...0.3 A
1)
7.55
4 x
All metal surfaces tin plated, except area of cut.
Metal surface min. X = 7.25, Y = 6.9
Typical
1)
0.1 B
0.1
0.05
8˚ MAX.
A
BA0.25 M
9.9 ±0.2
2.8
1)
15.65 ±0.3
12.95
0...0.15
±0.11.27
4.4
B
9.25 ±0.2
0.05
C
±0.2
17 ±0.3
8.51)
10 ±0.2
3.7 -0.15
C
2.4
0.5 ±0.1
13 ±0.5
±0.5
11
0...0.3
1.74 x
5 x ±0.1
0.8
2.4
All metal surfaces tin plated, except area of cut.
Metal surface min. X = 7.25, Y = 12.3
Typical
1)
Speed TEMPFET
BTS244Z
Package Outlines
Data Sheet 12 Rev.1.4, 2013-07-26
Green Product (RoHS compliant)
To meet the world-wide customer requirements for environmentally friendly products and to be compliant with
government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e
Pb-free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020).
For further information on alternative packages, please visit our website:
http://www.infineon.com/packages.Dimensions in mm
Data Sheet 13 Rev.1.4, 2013-07-26
Speed TEMPFET
BTS244Z
Revision History
2 Revision History
Revision Date Changes
1.4 2013-07-26 page 1, 11: updated package name and package drawing:
PG-TO220-5-62 to PG-TO263-5-2 (SMD)
PG-TO220-5-43 to PG-TO220-5-12 (THD, straight leads);
page 1, 11/12: removed package: PG-TO220-5-3 (THD, staggered leads)
page 1: added sales names for the different packages;
page 8: updated description figure 5
1.3 2009-12-04 updated package drawing of PG-TO220-5-62
1.2 2009-07-31 removed 100ms and DC line in SOA diagram
1.1 2008-11-10 all pages:
added new Infineon logo
Initial version of RoHS-compliant derivate of the BTS244Z
Page 1 and 12: added RoHS compliance statement and Green product feature
Page 1, 11 and 12: Package changed to RoHS compliant version
page 13: added Revision history
page 14: update of disclaimer
Edition 2013-07-26
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2013 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
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