1
Rectifier Device Data
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. . . designed for use in switching power supplies, inverters and as free
wheeling diodes, these state–of–the–art devices have the following features:
Ultrafast 25, 50 and 75 Nanosecond Recovery Times
175°C Operating Junction Temperature
Low Forward Voltage
Low Leakage Current
High Temperature Glass Passivated Junction
Reverse Voltage to 600 Volts
Mechanical Characteristics:
Case: Epoxy, Molded
Weight: 0.4 gram (approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal Leads are
Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes: 220°C
Max. for 10 Seconds, 1/16 from case
Shipped in plastic bags, 1000 per bag
Available Tape and Reeled, 5000 per reel, by adding a “RL’’ suffix to the
part number
Polarity: Cathode Indicated by Polarity Band
Marking: U120, U140, U160
MAXIMUM RATINGS
Ri
Sbl
MUR
Ui
Rating Symbol 120 140 160 Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
200 400 600 Volts
Average Rectified Forward Current
(Square W ave Mounting Method #3 Per Note 1) IF(AV) 1.0 @ TA = 130°C1.0 @ TA = 120°C Amps
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions, halfwave,
single phase, 60 Hz)
IFSM 35 Amps
Operating Junction Temperature and
Storage Temperature TJ, Tstg
*
65 to +175 °C
THERMAL CHARACTERISTICS
Maximum Thermal Resistance, Junction to Ambient RθJA See Note 1 °C/W
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (1)
(iF = 1.0 Amp, TJ = 150°C)
(iF = 1.0 Amp, TJ = 25°C)
vF0.710
0.875 1.05
1.25
Volts
Maximum Instantaneous Reverse Current (1)
(Rated dc Voltage, TJ = 150°C)
(Rated dc Voltage, TJ = 25°C)
iR50
2.0 150
5.0
µA
Maximum Reverse Recovery T ime
(IF = 1.0 Amp, di/dt = 50 Amp/µs)
(IF = 0.5 Amp, iR = 1.0 Amp, IREC = 0.25 A)
trr 35
25 75
50
ns
Maximum Forward Recovery T ime
(IF = 1.0 A, di/dt = 100 A/µs, IREC to 1.0 V) tfr 25 50 ns
(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle 2.0%.
SWITCHMODE is a trademark of Motorola, Inc.
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola, Inc. 1996
Order this document
by MUR120/D
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SEMICONDUCTOR TECHNICAL DATA
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ULTRAFAST RECTIFIERS
1.0 AMPERE
200–400–600 VOLTS
CASE 59–04
PLASTIC
MUR120, MUR140 and MUR160 are
Motorola Preferred Devices
Rev 3
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2Rectifier Device Data
MUR120
Figure 1. Typical Forward Voltage
vF, INSTANTANEOUS VOLTAGE (VOLTS)
0.3 0.60.4 0.8
3.0
0.01
0.03
0.02
0.2
0.1
10
2.0
0.7
0.3
0.05
0.5
5.0
, INSTANTANEOUS FORWARD CURRENT (AMPS)
F
1.3
VR, REVERSE VOLTAGE (VOLTS)
06040 100 120
100
0.01
0.001
1.0
10
TJ = 175
°
C
IR
20 80 200
Figure 2. Typical Reverse Current*
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
0
1.0
2.0
3.0
4.0
5.0
PF(AV)
00.5 1.0 1.5 2.0 2.5
TA, AMBIENT TEMPERATURE (
°
C)
050
0
2.0
1.0
3.0
5.0
4.0
I
250
Figure 3. Current Derating
(Mounting Method #3 Per Note 1)
Figure 4. Power Dissipation
0
10
30
50
5.0 10 20
VR, REVERSE VOLTAGE (VOLTS)
Figure 5. Typical Capacitance
0.5
0.07
1.0
7.0
1.0 1.2
100
°
CTJ = 175
°
C
25
°
C
160 180140
0.1
, REVERSE CURRENT ( A)
100
°
C
25
°
C
150100 200
* The curves shown are typical for the highest voltage device in the
voltage grouping. Typical reverse current for lower voltage selections
can be estimated from these same curves if VR is sufficiently below
rated VR.
C, CAPACITANCE (pF)
, AVERAGE POWER DISSIPATION (WATTS)
TJ = 25
°
C
i
, A VERAGE FORWARD CURRENT (AMPS)
F(AV)
30 40 50
7.0
20
TJ = 175
°
C
RATED VR
R
q
JA = 50
°
C/W
dc
SQUARE W AVE
m
(CAPACITIVE LOAD)IPK
IAV
+
20
SQUARE W AVE
dc
5.0
10
0.7 0.9 1.1
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3
Rectifier Device Data
MUR140, MUR160
Figure 6. Typical Forward Voltage
vF, INSTANTANEOUS VOLTAGE (VOLTS)
0.3 0.90.5 1.3
3.0
0.01
0.03
0.02
0.2
0.1
10
2.0
0.7
0.3
0.05
0.5
5.0
, INSTANTANEOUS FORWARD CURRENT (AMPS)
F
2.3
VR, REVERSE VOLTAGE (VOLTS)
0 200100 300 400
100
0.01
0.004
1.0
10
TJ = 175
°
C
IR
700
Figure 7. Typical Reverse Current*
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
0
1.0
2.0
3.0
4.0
5.0
PF(AV)
00.5 1.0 1.5 2.0 2.5
TA, AMBIENT TEMPERATURE (
°
C)
050
0
2.0
1.0
3.0
5.0
4.0
I
250
Figure 8. Current Derating
(Mounting Method #3 Per Note 1)
Figure 9. Power Dissipation
0
5.0
10
20
2.0 10 20
VR, REVERSE VOLTAGE (VOLTS)
Figure 10. Typical Capacitance
0.7
0.07
1.0
7.0
1.7 2.1
100
°
C
TJ = 175
°
C
25
°
C
600500
0.1
, REVERSE CURRENT ( A)
100
°
C
25
°
C
150100 200
* The curves shown are typical for the highest voltage device in the
voltage grouping. Typical reverse current for lower voltage selections
can be estimated from these same curves if VR is sufficiently below
rated VR.
C, CAPACITANCE (pF)
, AVERAGE POWER DISSIPATION (WATTS)
TJ = 25
°
C
i
, A VERAGE FORWARD CURRENT (AMPS)
F(AV)
30 40 50
3.0
7.0
TJ = 175
°
C
RATED VR
R
q
JA = 50
°
C/W
dc
SQUARE W AVE
m
IPK
IAV
+
20
SQUARE W AVE
dc
5.0
10
1.1 1.5 1.9
400
0.04
4.0
40
0.4
(CAPACITIVE LOAD)
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4Rectifier Device Data
Lead Length, L
Mounting
Method 1/8 1/4 1/2 Units
1
2
3
52
67
RθJA
65 72
80 87
50
°C/W
°C/W
°C/W
TYPICAL VALUES FOR RθJA IN STILL AIR
Data shown for thermal resistance junction to
ambient (RθJA) for the mountings shown is to be used
as typical guideline values for preliminary
engineering or in case the tie point temperature
cannot be measured.
NOTE 1 — AMBIENT MOUNTING DATA
MOUNTING METHOD 1
MOUNTING METHOD 2
MOUNTING METHOD 3
ÉÉÉÉÉÉÉÉÉÉÉ
ÉÉÉÉÉÉÉÉÉÉÉ
L L
ÉÉÉÉÉÉÉÉÉÉÉÉ
ÉÉÉÉÉÉÉÉÉÉÉÉ
L L
Vector Pin Mounting
ÉÉ
ÉÉ
ÉÉ
ÉÉ
ÉÉ
ÉÉ
ÉÉ
L = 3/8
Board Ground Plane
P.C. Board with
1–1/2 X 1–1/2 Copper Surface
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5
Rectifier Device Data
PACKAGE DIMENSIONS
CASE 59–04
ISSUE M
K
A
D
K
B
DIM MIN MAX MIN MAX
INCHESMILLIMETERS
A5.97 6.60 0.235 0.260
B2.79 3.05 0.110 0.120
D0.76 0.86 0.030 0.034
K27.94 ––– 1.100 –––
NOTES:
1. ALL RULES AND NOTES ASSOCIATED WITH
JEDEC DO–41 OUTLINE SHALL APPLY.
2. POLARITY DENOTED BY CATHODE BAND.
3. LEAD DIAMETER NOT CONTROLLED WITHIN F
DIMENSION.
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6Rectifier Device Data
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MUR120/D