CS19-12ho1 High Efficiency Thyristor VRRM = 1200 V I TAV = 20 A VT = 1.31 V Single Thyristor Part number CS19-12ho1 Backside: anode 2 1 3 Features / Advantages: Applications: Package: TO-220 Thyristor for line frequency Planar passivated chip Long-term stability Line rectifying 50/60 Hz Softstart AC motor control DC Motor control Power converter AC power control Lighting and temperature control Industry standard outline RoHS compliant Epoxy meets UL 94V-0 IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130321b CS19-12ho1 Ratings Thyristor Conditions Symbol V RSM/DSM Definition max. non-repetitive reverse/forward blocking voltage TVJ = 25C max. 1300 Unit V V RRM/DRM max. repetitive reverse/forward blocking voltage TVJ = 25C 1200 V I R/D reverse current, drain current VR/D = 1200 V TVJ = 25C 50 A VR/D = 1200 V TVJ = 125C 1 mA TVJ = 25C 1.32 V 1.65 V 1.31 V VT IT = forward voltage drop 20 A IT = 40 A IT = 20 A IT = 40 A I TAV average forward current TC = 110C 180 sine I T(RMS) RMS forward current VT0 threshold voltage rT slope resistance R thJC thermal resistance junction to case R thCH thermal resistance case to heatsink total power dissipation I TSM max. forward surge current value for fusing typ. TVJ = 125 C for power loss calculation only Ptot It min. 1.73 V T VJ = 125 C 20 A 31 A TVJ = 125 C 0.86 V 0.50 W t = 10 ms; (50 Hz), sine TVJ = 45C 180 A t = 8,3 ms; (60 Hz), sine VR = 0 V 195 A t = 10 ms; (50 Hz), sine TVJ = 125 C 155 A t = 8,3 ms; (60 Hz), sine VR = 0 V 165 A t = 10 ms; (50 Hz), sine TVJ = 45C 160 As t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine VR = 0 V 160 As TVJ = 125 C 120 As 115 As t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 230 V f = 1 MHz TVJ = 25C PGM max. gate power dissipation t P = 30 s T C = 125 C 9 t P = 300 s average gate power dissipation critical rate of rise of current K/W 170 junction capacitance (di/dt) cr m K/W TC = 25C CJ PGAV 22 0.7 TVJ = 150C; f = 50 Hz repetitive, IT = 60 A non-repet., IT = 20 A pF 5 W 2.5 W 0.5 W 150 A/s t P = 200 s; di G /dt = 0.15 A/s; I G = 0.15 A; VD = VDRM (dv/dt) cr critical rate of rise of voltage VGT gate trigger voltage I GT gate trigger current 500 A/s TVJ = 150C 500 V/s VD = 6 V TVJ = 25 C 1.5 TVJ = -40 C 2.5 V VD = 6 V TVJ = 25 C 28 mA TVJ = -40 C 50 mA TVJ = 150 C 0.2 V 3 mA TVJ = 25 C 75 mA VD = VDRM R GK = ; method 1 (linear voltage rise) VGD gate non-trigger voltage I GD gate non-trigger current IL latching current VD = VDRM t p = 10 s IG = 0.1 A; di G /dt = V 0.1 A/s IH holding current VD = 6 V R GK = TVJ = 25 C 50 mA t gd gate controlled delay time VD = 1/2 VDRM TVJ = 25 C 2 s tq turn-off time IG = 0.1 A; di G /dt = 0.1 A/s VR = 100 V; I T = 20 A; VD = VDRM TVJ = 125 C di/dt = 10 A/s; dv/dt = IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved 150 s 20 V/s; t p = 200 s Data according to IEC 60747and per semiconductor unless otherwise specified 20130321b CS19-12ho1 Package Ratings TO-220 Symbol I RMS Definition Conditions RMS current per terminal Tstg storage temperature T VJ virtual junction temperature min. typ. max. 35 Unit A -55 150 C -40 125 C Weight 2 MD mounting torque FC mounting force with clip g 0.4 0.6 Nm 20 60 N Product Marking abcdef Part Number Logo Date Code Lot # YYWW Z XXXXXX Assembly Line Ordering Standard Part Number CS19-12ho1 Similar Part CS19-12ho1S CS19-08ho1 CS19-08ho1S Equivalent Circuits for Simulation I V0 R0 Package TO-263AB (D2Pak) (2) TO-220AB (3) TO-263AB (D2Pak) (2) * on die level Delivery Mode Tube Quantity 50 Code No. 473138 Voltage class 1200 800 800 T VJ = 125 C Thyristor V 0 max threshold voltage 0.86 R 0 max slope resistance * 19 IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Marking on Product CS19-12ho1 V m Data according to IEC 60747and per semiconductor unless otherwise specified 20130321b CS19-12ho1 Outlines TO-220 Dim. Millimeter Min. Max. Inches Min. Max. A A1 A2 4.32 1.14 2.29 4.82 1.39 2.79 0.170 0.045 0.090 0.190 0.055 0.110 b b2 0.64 1.15 1.01 1.65 0.025 0.045 0.040 0.065 C D 0.35 14.73 0.56 16.00 0.014 0.580 0.022 0.630 E e H1 9.91 2.54 5.85 10.66 BSC 6.85 0.390 0.100 0.230 0.420 BSC 0.270 L L1 12.70 2.79 13.97 5.84 0.500 0.110 0.550 0.230 OP Q 3.54 2.54 4.08 3.18 0.139 0.100 0.161 0.125 A A1 OP H1 Q E D 4 3 L 3x b2 2 L1 1 3x b 2x e C A2 2 1 3 IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130321b CS19-12ho1 Thyristor 60 160 1000 50 Hz, 80% VRRM VR = 0 V 140 40 120 IT [A] 2 It TVJ = 45C ITSM 2 100 20 TVJ = 45C 100 [A s] TVJ = 125C [A] 125C 150C TVJ = 125C 80 TVJ = 25C 0 0.5 60 1.0 1.5 2.0 10 2.5 0.01 0.1 100 1 3 4 5 6 7 8 910 t [s] t [ms] Fig. 3 I t versus time (1-10 ms) 2 1000 1: IGD, TVJ = 150C 2: IGT, TVJ = 25C 3: IGT, TVJ = -40C 2 Fig. 2 Surge overload current VT [V] Fig. 1 Forward characteristics 1 40 dc = 1 0.5 0.4 0.33 0.17 0.08 30 10 100 VG 5 3 [s] [A] 1 1 IT(AV)M Limit 20 4 2 [V] typ. tgd 6 10 TVJ = 125C 10 4: PGAV = 0.5 W 0.1 5: PGM = 2.5 W 6: PGM = 5 W IGD, TVJ = 125C 1 10 100 1 10 1000 0 100 1000 0 25 IG [mA] IG [mA] 75 100 125 150 175 TC [C] Fig. 5 Gate controlled delay time Fig. 4 Gate trigger characteristics 50 Fig. 6 Max. forward current at case temperature 0.8 dc = 1 0.5 0.4 0.33 0.17 0.08 40 30 RthHA 0.6 0.8 1.0 2.0 4.0 8.0 P(AV) 0.6 ZthJC 0.4 20 Rthi [K/W] [K/W] [W] 0.2 10 0 0 10 20 IF(AV) [A] 0 50 100 0.0 100 150 Tamb [C] (c) 2013 IXYS all rights reserved 102 0.01 0.0011 0.18 0.17 0.17 0.025 0.32 0.09 103 104 t [ms] Fig. 7a Power dissipation versus direct output current Fig. 7b and ambient temperature IXYS reserves the right to change limits, conditions and dimensions. 101 ti [s] 0.1 0.08 Fig. 8 Transient thermal impedance Data according to IEC 60747and per semiconductor unless otherwise specified 20130321b