V
RRM
= 600 V - 1000 V
I
O
= 25 A
Features
• Ideal for printed circuit board
KBJ Package
• Not ESD Sensitive
Parameter Symbol Unit
• Types from 600 V to 1000 V V
RRM
• Plastic material has Underwriters Laboratory
Flammability Classification 94V-0
• Reliable, low cost construction utilizing molded
KBJ2506G thru KBJ2510G
Single Phase Glass Passivated
Silicon Brid
e Rectifier
KBJ2506G KBJ2508G
• Low forward voltage drop, high current capability
Maximum ratings at Ta
= 25 °C (ambient temperature), unless otherwise specified
Conditions KBJ2510G
Repetitive peak reverse voltage V
RRM
V
RMS reverse voltage V
RMS
V
DC blocking voltage V
DC
V
Operating temperature T
j
°C
Storage temperature T
stg
°C
Parameter Symbol Unit
Peak forward surge current I
FSM
A
Maximum instantaneous
forward voltage per leg
T
a
= 25 °C A
Maximum average forward
rectified current I
O
4.2 4.2 4.2
600
10
-55 to 125
25
Maximum reverse current at
rated DC blocking voltage per
leg
I
R
V
F
T
a
= 125 °C
8.3 ms single sine-wave
μA
T
a
= 25 °C
I
F
= 12.5 A
Single phase, half sine wave, 60 Hz, resistive or inductive load
For capacitive load derate current by 20%
T
c
= 110 °C 25
350
Electrical characteristics at Ta = 25 °C, unless otherwise specified
-55 to 125
-55 to 150
KBJ2510G
-55 to 150 -55 to 150
KBJ2506G KBJ2508G
500
10
1.05
10
1.05 1.05
560420
-55 to 125
500 500
25
350 350
V
Conditions
600 1000
700
1000800
800
www.genesicsemi.com/silicon-products/bridge-rectifiers/
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