© 2000 IXYS All rights reserved D6 - 5
150 250 300
600 22
200 33
90
-40...+150
-40...+125
110
280
3000
3600
12.7
9.6
50
0.550
0.450
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
Dimensions in mm (1 mm = 0.0394")
Features
●International standard package
with DCB ceramic base plate
●Planar passivated chips
●Short recovery time
●Low switching losses
●Soft recovery behaviour
●Isolation voltage 3600 V~
●UL registered E 72873
Applications
●Antiparallel diode for high frequency
switching devices
●Free wheeling diode in converters
and motor control circuits
●Inductive heating and melting
●Uninterruptible power supplies (UPS)
●Ultrasonic cleaners and welders
Advantages
●High reliability circuit operation
●Low voltage peaks for reduced
protection circuits
●Low noise switching
●Low losses
Preliminary data
75 107
75 75
TBD
1200
1300
1080
1170
7200
7100
5800
5700
2.50-4/22-35
2.50-4/22-35
100 1.85
2.17
300 2.58
2.64
2
0.5
34
1.48
3.65
015
123 123 123
VRSM VRRM Type
V V MEA75-12 DA MEK 75-12 DA MEE 75-12 DA
1200 1200
Symbol Test Conditions Maximum Ratings
IFRMS Tcase= °CA
IFAV Tcase= °C; rectangular, d = 0.5 A
IFRM tP < 10 µs; rep. rating, pulse width limited by TVJM A
IFSM TVJ = 45°C; t = 10 ms (50 Hz), sine A
t = 8.3 ms (60 Hz), sine A
TVJ = 150°C; t = 10 ms (50 Hz), sine A
t = 8.3 ms (60 Hz), sine A
I2tTVJ = 45°C; t = 10 ms (50 Hz), sine A2s
t = 8.3 ms (60 Hz), sine A2s
TVJ = 150°C; t = 10 ms (50 Hz), sine A2s
t = 8.3 ms (60 Hz), sine A2s
TVJ °C
Tstg °C
THmax °C
Ptot Tcase = 25°CW
VISOL 50/60 Hz, RMS t = 1 min V~
IISOL ≤ 1 mA t = 1 s V~
MdMounting torque (M5) Nm/lb.in.
Terminal connection torque (M5) Nm/lb.in.
dSCreep distance on surface mm
dAStrike distance through air mm
aMaximum allowable acceleration m/s2
Weight g
Symbol Test Conditions Characteristic Values (per diode)
typ. max.
IRTVJ = 25°CV
R= VRRM mA
TVJ = 25°CV
R= 0.8 • VRRM mA
TVJ = 125°CV
R= 0.8 • VRRM mA
VFIF = A; TVJ = 125°CV
TVJ =25°CV
IF = A; TVJ = 125°CV
TVJ =25°CV
VT0 For power-loss calculations only V
rTmΩ
RthJH DC current K/W
RthJC DC current K/W
trr IF = A TVJ = 100°Cns
IRM VR = V TVJ = 25°CA
-di/dt = A/µsT
VJ = 100°CA
Fast Recovery
Epitaxial Diode
(FRED) Module
MEA 75-12 DA
MEK 75-12 DA
MEE 75-12 DA
VRRM = 1200 V
IFAV = 75 A
trr = 250 ns
TO-240 AA
1
2
3
© 2000 IXYS All rights reserved
D6 - 6
200 600 10000 400 800
150
200
250
300
350
0.001 0.01 0.1 1 10
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0 50 100 150
0.4
0.6
0.8
1.0
1.2
1.4
Kf
TVJ
°C
-diF/dt
t
s
K/W
0 200 400 600 800 1000
20
60
100
0
40
80
0.0
0.4
0.8
1.2
1.6
2.0
VFR
diF/dt
A
200 600 10000 400 800
20
60
100
0
40
80
10 100 1000
0
2
4
6
8
10
0123
0
25
50
75
100
125
150
175
200
IRM
Qr
IF
A
VF-diF/dt -diF/dt
A/µs
A
V
µC
A/µsA/µs
trr
ns
tfr
A/µs
µs
75-12 DA
Fig. 7 Transient thermal impedance junction to heatsink
TVJ= 100°C
VR = 600V
TVJ= 100°C
IF = 150A
Fig. 3 Peak reverse current IRM
versus -diF/dt
Fig. 2 Reverse recovery charge Qr
versus -diF/dt
Fig. 1 Forward current IF versus
voltage drop VF per leg
TVJ= 100°C
VR = 600V
TVJ= 100°C
VR = 600V
Qr
IRM
Fig. 4 Dynamic parameters Qr, IRM
versus junction temperature TVJ
Fig. 5 Recovery time trr versus -diF/dt Fig. 6 Peak forward voltage VFR and tfr
versus diF/dt
tfr
TVJ=125°C
TVJ= 25°C
IF= 150A
IF= 100A
IF= 70A IF= 150A
IF= 100A
IF= 70A
IF= 150A
IF= 100A
IF= 70A
Constants for ZthJH calculation:
iR
thi (K/W) ti (s)
1 0.037 0.002
2 0.138 0.134
3 0.093 0.25
4 0.282 0.274
ZthJH
MEA 75-12 DA MEE 75-12 DA
MEK 75-12 DA
VFR
016
