PDE-M400JS6AW-0
I
II
IG
GG
GB
BB
BT
T T
T M
MM
MOD
ODOD
ODU
UU
UL
LL
LE
EE
E
MBM400JS6AW
Silicon N-channel IGBT OUTLINE DRAWING
F
FF
FEA
EAEA
EAT
TT
TU
UU
URE
RERE
RES
SS
S
* High speed and low saturation voltage.
* low noise due to built-in free-wheeling
diode - ultra soft fast recovery d i od e(USFD).
* Isolated head sink (terminal to base).
ABSOLUTE MAXIMUM RATINGS (Tc=25°C )
Item Symbol Unit MBM400JS6AW
Collector Emitter Voltage VCES V 600
Gate Emi tter Voltage VGES V±20
Collector Current DC IC400
1ms ICp A800
Forward Current DC IF 400 (1)
1ms IFM A800
Collector Power Dissipa tion Pc W 1,470
Junction Temperature Tj°C -40 ~ +150
Storage Temperature Tstg °C -40 ~ +125
Isolation Voltage VISO VRMS 2,500(AC 1 minute)
Screw Torque Terminals - 2.94(30) (2)
Mounting - N.m
(kgf.cm) 2.94(30) (3)
Notes:(1)RMS Current of Diode 120Arms max.
(2)(3)Recommended Value 2.45N.m(25kgf.cm)
CHARACTERISTICS (Tc=25°C )
Item Symbol Units Min. Typ. Max. Test Conditions
Colle ctor Emitter Cut-Off Current I CES mA - - 1.0 VCE=600V,VGE=0V
Gate Emi tter Leakage Current IGES nA - - ±500 VGE=±20V,VCE=0V
Collector Emitter Saturatio n Voltage VCE(sat) V-1.92.4I
C=400A,VGE=15V
Gate Emi tter Threshold Voltage VGE(TO) V- -10V
CE=5V, IC =400mA
Input Capacitance Cies pF - 24,000 - VCE=10V,VGE=0V,f=1MHz
Rise Time tr- 0.25 0.5 VCC=300V
Turn On Time ton - 0.35 0.7 RL=0.75W
Fall Time tf- 0.25 0.35 RG=6.2W (4)
Switching Times
Turn Off Time toff
ms
-0.81.1V
GE=±15V
Peak Forward Voltage Drop VFM V-2.23.0I
F=400A,VGE=0V
Reverse Recovery Time trr ms- -0.3I
F=400A,VGE=-10V, di/dt=400A/ms
IGBT Rth(j-c) - - 0.085
Thermal Impedance FWD Rth(j-c) °C/W - - 0.22 Junction to case
Notes:(4) RG value is the test cond ition ’s value for decision of the switching times, not recomm ended value.
Determine the suitable R
G val ue after the measurement of switch ing waveforms
(overshoot voltage,etc.)with appliance mounted
6.5
29
7
12
36
φ0.8
46
108
93
20 18 20
25 25
4-φ6.5
3-M6
48
62
4-Fast-on
Terminal
#110
15
27
E2 C1
C2E1
G2
E2
E1
G1
Unit in mm
Weight: 470 (g) TERMINALS
E1
C1
G1
E2 E2
G2
C2E1
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VGE=15V 13V12V
800
0 2 4 6 8 10
400
600
200
0
11V
TYPICAL
10V
9V
Collector Current, Ic (A)
Collector Current, Ic (A)
Collector to Emitter Voltage, VCE (V)
Collector current vs. Collector to Emitter voltage
Ic=400A
Ic=800A
10
8
6
4
2
00 5 10 15 20
TYPICAL
Collector to Emitter Voltage, V
CE
(V)
Gate to Emitter Voltage, VGE (V)
Ic=800A
Ic=400A
Collector to Emitter voltage vs. Gate to Emitter voltage
20
15
10
5
00500 1000 1500
TYPICAL TYPICAL
Vcc=300V
Ic =400A
Tc=25°C
Gate to Emitter Voltage, V
GE
(V)
Forward Current, I
F
(A)
Gate Charge, QG (nc)
Gate charge characteristics
400
800
600
200
00 1 2 3 4 5
Forward Voltage, VF (V)
Forward voltage of free-wheeling diode
10
8
6
4
2
00 5 10 15 20
TYPICAL
Collector to Emitter Voltage, V
CE
(V)
Gate to Emitter Voltage, VGE (V)
Collector to Emitter voltage vs. Gate to Emitter voltage
TYPICAL
Tc=125°C
Collector to Emitter Voltage, VCE (V)
Collector current vs. Collector to Emitter voltage
PDE-M400JS6AW-0
Tc=25°C
14V 14V
Pc=1470W
VGE=15V 13V12V
800
0 2 4 6 8 10
400
600
200
0
11V
10V
9V
VGE=0
Tc=25°C
Tc=125°C
Tc=125°C
Tc=25°C
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1.5
1.0
0.5
00 100 200 300 400 500
TYPICAL
TYPICAL
TYPICAL
Switching Time, t (ms)
Collector Current, IC (A)
Switching time vs. Collector current
20
30
40
10
00 100 300200 500400
Switching Loss, Et
on
,Et
off
, E
rr
(mJ/pulse)
Collector Current, IC (A)
Switching loss vs. Collector current
10
1
0.1 110 100
Switching Time, t (ms)
Gate Resistance, RG (W)
Switching time vs. Gate resistance
tr
tf
TYPICAL
100
10
1
110 100
Switching Loss, Et
on
, Et
off
(mJ/pulse)
Gate Resistance, RG (W)
Switching loss vs. Gate resistance
1000
100
10
1
0.1 0 100 200 300 400 500 600 700
Collector Current, Ic (A)
Collector to Emitter Voltage, VCE (V)
Reverse biased safe operating area
1
0.1
0.01
0.0010.001 0.01 0.1 1 10
Transient Thermal Impedance, R
th(j-c)
(°C/W)
Time, t (s)
Transient thermal impedance
Diode
IGBT
PDE-M400JS6AW-0
toff
ton
tr
tf
Vcc=300V
VGE=±15V
RG=6.2W
TC=25°C
Resistive Load
VCC=300V
VGE=±15V
IC=400A
TC=25°C
Resistive Load
toff
ton
Err
Eton
Etoff
Vcc=300V
VGE=±15V
RG=6.2W
TC=125°C
Inductive Load
Etoff
Eton
Err
VCC=300V
VGE=±15V
IC =400A
TC=125°C
Inductive Load
VGE=±15V
RG=6.2W
TC£125°C
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1. The information given herein, including the specifications and dimensions, is subject to
change without prior notice to improve product characteristics. Before ordering,
purchasers are adviced to contact Hitachi sales department for the latest version of this
data sheets.
2. Please be sure to read "Precautions for Safe Use and Notices" in the individual brochure
before use.
3. In cases where extremely high reliability is required(such as use in nuclear power control,
aerospace and aviation, traffic equipment, life-support-related medical equipment, fuel
control equipment and various kinds of safety equipment), safety should be ensured by
using semiconductor devices that feature assured safety or by means of users’ fail-safe
precautions or other arrangement. Or consult Hitachi’s sales department staff.
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any other cause during operation of the user’s units according to this data sheets. Hitachi
assumes no responsibility for an y intellectual propert y claims or any other problems that
may result from applications of information, products or circuits described in this data
sheets.
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For inquiries relating to the products, please contact nearest overseas representatives which is located
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Notices
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