DG421/DG423/DG425
Improved Low-Power,
CMOS Analog Switches with Latches
________________________________________________________________
Maxim Integrated Products
1
TOP VIEW
16
15
14
13
12
11
10
9
1
2
3
4
5
6
7
8
S1
IN1
V-
GND
N.C.
N.C.
WR
D1
DG421
VL
V+
IN2
S2
D2
RS
N.C.
N.C.
DIP
_________________Pin Configurations
SWITCHES SHOWN FOR
LOGIC "1" INPUT
D2
D1
CK
R
DQ
CK
R
DQ
TWO SPST SWITCHES
PER PACKAGE
WR RS IN SWITCH
010
1Off
On
LOGIC "O" 0.8V
LOGIC "1" 2.4V
DG421 TRUTH TABLE
S1
WR
IN1
IN2
RS
S2
DG421
__Functional Diagrams/Truth Tables
Call toll free 1-800-998-8800 for free samples or literature.
19-0137; Rev 1; 3/94
_______________General Description
Maxim’s redesigned DG421/DG423/DG425 monolithic
analog switches now feature guaranteed on-resistance
matching (3max) between switches and on-resistance
flatness over the signal range (4max). These low on-
resistance switches (20typ) conduct equally well in both
directions. They guarantee a low charge injection of 15pC
maximum and an ESD tolerance of 2000V minimum per
Method 3015.7. Off leakage current over temperature has
also been reduced (less than 5nA at +85°C).
The DG421/DG423/DG425 are precision, dual CMOS
switches with latchable logic inputs that simplify inter-
facing with microprocessors (µPs). The single-pole/single-
throw DG421 and double-pole/single-throw DG425 are
normally open dual switches. The dual, single-
pole/double-throw DG423 has two normally open and
two normally closed switches. Fast switching times
(175ns for tON and 145ns for tOFF) and low power
consumption (35µW max) make these parts ideal for
battery-powered applications requiring µP-compatible
switches. Operation is from a single +10V to +30V supply,
or bipolar ±4.5V to ±20V supplies. Fabricated with the
same 44V silicon-gate process, these switches have
rail-to-rail signal handling capabilities.
_______________________Applications
Sample-and-Hold Circuits Modems
Fax Machines Test Equipment
Battery-Operated Systems PBX, PABX
Guidance and Control Systems Military Radios
Audio Signal Routing Communication Systems
______________________New Features
Plug-In Upgrades for Industry-Standard
DG421/DG423/DG425
Improved r(DS)ON Match Between Channels (3 max)
Guaranteed rFLAT(ON) Over Signal Range (4 max)
Improved Charge Injection (15pC max)
Improved Off Leakage Current Over Temperature
(<5nA at +85°C)
Withstands Electrostatic Discharge (2000V min)
per Method 3015.7
__________________Existing Features
Low rDS(ON) (35max)
Single-Supply Operation +10V to +30V
Bipolar-Supply Operation ±4.5V to ±20V
Low Power Consumption (35µW max)
Rail-to-Rail Signal Handling Capability
TTL/CMOS-Logic Compatible
______________Ordering Information
Ordering Information continued at end of data sheet.
* Contact factory for dice specifications.
**Contact factory for availability and processing to MIL-STD-883B.
Functional Diagrams/Truth Tables continued at end of data sheet.
N.C. = No Internal Connection
Pin Configurations continued at end of data sheet.
16 CERDIP**-55°C to +125°CDG421AK
16 SO-40°C to +85°CDG421DY
Dice*0°C to +70°CDG421C/D
0°C to +70°C
16 CERDIP-40°C to +85°CDG421DK
16 Plastic DIP-40°C to +85°CDG421DJ
16 SO0°C to +70°CDG421CY 16 Plastic DIP
DG421CJ PIN-PACKAGETEMP. RANGE PART
DG421/DG423/DG425
Improved Low-Power,
CMOS Analog Switches with Latches
2 _______________________________________________________________________________________
Voltage Referenced to V-
V+............................................................44V
GND .........................................................25V
VL..................................(GND - 0.3V) to (V+ + 0.3V)
Digital Inputs, VS, VD(Note 1)..............(V- - 2V) to (V+ + 2V)
Current (any terminal, except S or D).................................30mA
Continuous Current, S or D.................................................20mA
Peak Current, S or D (pulsed at 1ms, 10% duty cycle max)...100mA
Continuous Power Dissipation (TA= +70°C)
16-Pin Plastic DIP (derate 10.53mW/°C above +70°C) ...842mW
20-Pin PLCC (derate 10.00mW/°C above +70°C) ..... 800mW
16-Pin CERDIP (derate 10.00mW/°C above +70°C) ...800mW
Operating Temperature Ranges
DG42_C_ ..........................................0°C to +70°C
DG42_D_ .......................................-40°C to +85°C
DG42_A_ . .....................................-55°C to +125°C
Storage Temperature Ranges
DG42_C_/DG42_D_ ...........................-65°C to +125°C
DG42_A_ ..................................... -65°C to +150°C
Lead Temperature (soldering, 10sec)....................+300°C
ELECTRICAL CHARACTERISTICS
(V+ = 15V, V- = -15V, VL= +5V, GND = 0V, VINH = +2.4V, VINL = +0.8V, TA= TMIN to TMAX, unless otherwise noted.)
Stresses beyond those listed under "Absolute Maximum Ratings
"
may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
ABSOLUTE MAXIMUM RATINGS
Note 1: Signals on S, D, or IN exceeding V+ or V- are clamped by internal diodes. Limit forward current to maximum current ratings.
TA= +25°C
TA= TMIN to TMAX
V+ = 13.5V,
V- = -13.5V,
IS= -10mA,
VD= ±10V
rDS(ON)
Drain-Source
On-Resistance
CONDITIONSSYMBOLPARAMETER
20 45
DG42_C, DG42_D
MIN TYP MAX
(Note 2)
UNITS
45 45
20 35
DG42_A
MIN TYP MAX
(Note 2)
TA= +25°C
TA= TMIN to TMAX
V+ = 16.5V,
V- = -16.5V,
IS= -10mA,
VD= ±10V
rDS(ON)
On-Resistance Match
Between Channels
(Note 4)
4 4
3 3
TA= +25°C
TA= TMIN to TMAX
V+ = 15V,
V- = -15V,
IS= -10mA,
VD= ±5V
rFLAT(ON)
On-Resistance
Flatness (Note 4)
5 5
4 4
(Note 3)VANALOG
Analog Signal Range V-15 15 -15 15
TA= +25°C
TA= TMIN to TMAX
V+ = 16.5V,
V- = -16.5V,
VD= ±15.5V,
VS= 15.5V
m
IS(OFF)
Source-Off
Leakage Current
(Note 5) nA
-5 5 -10 10
-0.50 -0.01 0.50 -0.25 -0.01 0.25
TA= +25°C
TA= TMIN to TMAX
V+ = 16.5V,
V- = -16.5V,
VD= ±15.5V,
VS= 15.5V
m
ID(OFF)
Drain-Off
Leakage Current
(Note 5) nA
-5 5 -10 10
-0.50 -0.01 0.50 -0.25 -0.01 0.25
TA= +25°C
TA= TMIN to TMAX
V+ = 16.5V,
V- = -16.5V,
VD= ±15.5V,
VS= ±15.5V
ID(ON)
Drain-On
Leakage Current
(Note 5) nA
-10 10 -20 20
-1.0 -0.04 1.0 -0.40 -0.04 0.40
SWITCH
DG421/DG423/DG425
Improved Low-Power,
CMOS Analog Switches with Latches
_______________________________________________________________________________________ 3
ELECTRICAL CHARACTERISTICS (continued)
(V+ = 15V, V- = -15V, VL= +5V, GND = 0V, VINH = +2.4V, VINL = +0.8V, TA= TMIN to TMAX, unless otherwise noted.)
TA= +25°C
TA= TMIN to TMAX
All channels on or off,
V+ = 16.5V, V- = -16.5V,
VIN = 0V or 5V
I+Positive Supply Current
CONDITIONSSYMBOLPARAMETER
µA
UNITS
-5.0 5.0
-1.0 0.01 1.0
MIN TYP MAX
(Note 2)
IN = 2.4V, all others = 0.8VIINH
Input Current with Input Voltage High µA-0.50 0.005 0.50
IN = 0.8V, all others = 2.4VIINL
Input Current with Input Voltage Low µA-0.50 0.005 0.50
(Note 3)V+, V-Power Supply Range V±4.5 ±20
TA= +25°C
TA= TMIN to TMAX
All channels on or off,
V+ = 16.5V, V- = -16.5V,
VIN = 0V or 5V
I-Negative Supply Current µA
-5.0 5.0
-1.0 -0.01 1.0
TA= +25°C
TA= TMIN to TMAX
All channels on or off,
V+ = 16.5V, V- = -16.5V,
VIN = 0V or 5V
IGND
Ground Current µA
-5.0 5.0
-1.0 -0.01 1.0
TA= +25°C
TA= TMIN to TMAX
Figure 2tON
Turn-On Time ns
300
150 250
200 nsFigure 2tOFF
Turn-Off Time TA= +25°C
TA= -55°C to +125°C
VS= ±10V,
RL= 300,
CL= 35pF,
Figure 3
tWW
Latch Timing ns
200
200
TA= +25°C
TA= -55°C to +125°C
tDW 100
100
TA= +25°C
TA= -55°C to +125°C
tWD 100
60
TA= +25°C 525
T
A
= +25°C
TA= TMIN to TMAX
All channels on or off,
V+ = 16.5V, V- = -16.5V,
VIN = 0V or 5V
IL
Logic Supply Current µA
-5.0 5.0
-1.0 -0.01 1.0
Break-Before-Make Interval (Note 3) tDDG423, Figure 4 ns
TA= +25°C 10 15Charge Injection (Note 3) Q CL= 10nF, VG= 0V,
RG= 0, Figure 5 pC
TA= +25°C 72
Off-Isolation Rejection Ratio
(Note 6) OIRR RL= 100, CL= 5pF,
f = 1MHz, Figure 6 dB
TA= +25°C 12Drain-Off Capacitance CD(OFF) f = 1MHz, Figure 8 pF
TA= +25°C 90Crosstalk (Note 7) RL= 50, CL= 5pF,
f = 1MHz, Figure 7 dB
TA= +25°C 12Source-Off Capacitance CS(OFF) f = 1MHz, Figure 8 pF
Note 2: Typical values are for design aid only, are not guaranteed, and are not subject to production testing. The algebraic convention,
where the most negative value is a minimum and the most positive value a maximum, is used in this data sheet.
Note 3: Guaranteed by design.
Note 4: On-resistance match between channels and flatness are guaranteed only with bipolar-supply operation. Flatness is defined as the dif-
ference between the maximum and minimum value of on-resistance as measured at the extremes of the specified analog signal range.
Note 5: Leakage parameters IS(OFF), ID(OFF), and ID(ON) are 100% tested at the maximum rated hot temperature and guaranteed by
correlation at +25°C.
Note 6: Off-Isolation Rejection Ratio = 20log (VD/VS), VD= output, VS= input to off switch.
Note 7: Between any two switches.
TA= +25°C 39Drain-On Capacitance CD(ON) f = 1MHz, Figure 9 pF
TA= +25°C 39Source-On Capacitance CS(ON) f = 1MHz, Figure 9 pF
INPUT
SUPPLY
DYNAMIC
DG421/DG423/DG425
Improved Low-Power,
CMOS Analog Switches with Latches
4 _______________________________________________________________________________________
50
55
20
-20
ON-RESISTANCE vs. VD
(DUAL-SUPPLIES)
25
45
MAX401-1
VD (V)
rDS (ON) ()
10
35
30
-10 0 20
40
15
10
5
A: V+ = 5V, V- = -5V
B: V+ = 10V, V- = -10V
C: V+ = 15V, V- = -15V
D: V+ = 20V, V- = -20V A
B
C
D
35
5-20
ON-RESISTANCE vs. VD AND 
TEMPERATURE (DUAL SUPPLIES)
10
30
MAX401-2
VD (V)
rDS (ON) ()
20
20
15
-10 10
25
0
V+ = 15V, V- = -15V
TA = +125°C
TA = +85°C
TA = +25°C
TA = -55°C
140
20 0
ON-RESISTANCE vs. VD
(SINGLE SUPPLY)
40
120
MAX401-3
VD (V)
rDS (ON) ()
20
80
60
515
100
10
V+ = 5V
V- = 0V
V+ = 10V
V+ = 15V V+ = 20V
70
10 0
ON-RESISTANCE vs. VD AND
TEMPERATURE (SINGLE SUPPLY)
20
60
MAX401-4
VD (V)
rDS (ON) ()
20
40
30
515
50
10
V+ = 12V, V- = 0V
TA = +125°C
TA = +85°C
TA = +25°C
100
0.0001 -75 125
OFF LEAKAGE CURRENTS vs.
TEMPERATURE
0.001
10
MAX401-5
TEMPERATURE (°C)
OFF LEAKAGE (nA)
0.1
0.01
25
1
V+ = 16.5V
V- = -16.5V
VD = ±15V
VS = ±15V
100
0.0001 -75 125
ON LEAKAGE CURRENTS vs.
TEMPERATURE
0.001
10
MAX401-6
TEMPERATURE (°C)
ON LEAKAGE (nA)
0.1
0.01
25
1
V+ = 16.5V
V- = -16.5V
VD = ±15V
VS = ±15V
60
-60 -20 20
CHARGE INJECTION vs.
ANALOG VOLTAGE
-40
40
MAX401-7
VD (V)
Q (pC)
10
0
-20
-10 0
20
V+ = 15V, V- = -15V
100
0.0001 -75 125
SUPPLY CURRENT vs.
TEMPERATURE
0.001
10
MAX401-8
TEMPERATURE (°C)
I+, I-, IL (µA)
0.1
0.01
25
1I+ at V+ = 16.5V
I- at V- = -16.5V
IL at VL = 5V
__________________________________________Typical Operating Characteristics
(TA = +25°C, unless otherwise noted.)
DG421/DG423/DG425
Improved Low-Power,
CMOS Analog Switches with Latches
_______________________________________________________________________________________ 5
___________________Pin Descriptions
1, 8 D1, D2 Drain Terminals
2
W
R
Write Select
3, 4, 5, 6 N.C. No Internal Connection
7
R
S
Reset Select
9, 16 S1, S2 Source Terminals
10, 15 IN1, IN2 Input Control
11 V+ Positive Supply
12 VLLogic Supply
13 GND Ground
14 V- Negative Supply
1, 8, 3, 6 2, 10, 4, 8 Drain Terminals
2 3 Write Select
W
R
16, 9, 4, 5 20, 12, 5, 7 Source TerminalsS1-S4
7 9 Resets Select
D1-D4
15, 10 19, 13 Input ControlIN1, IN2
11 14 Positive SupplyV+
R
S
12 15 Logic SupplyVL
1, 6, 11, 16 No Internal ConnectionN.C.
14 18 Negative SupplyV-
13 17 GroundGND
PIN NAME FUNCTION
DIP PLCC FUNCTIONNAME
Figure 1. Overvoltage Protection Using External Blocking Diodes
__________Applications Information
Operation with Supply Voltages
Other Than ±15V
The DG421/DG423/DG425 switches operate with ±4.5V
to ±20V bipolar supplies or with a +10V to +30V single
supply. In either case, analog signals ranging from V+
to V- can be switched. The
Typical Operating
Characteristics
graphs illustrate typical analog-signal
and supply-voltage on-resistance variations. The usual
on-resistance temperature coefficient is 0.5%/°C (typ).
Logic Inputs
These devices operate with a single positive supply or
with bipolar supplies. They maintain TTL compatibility
with supplies anywhere in the ±4.5V to ±20V range as
long as VL= +5V. If VLis connected to V+ or another
supply at voltages other than +5V, the devices will
operate at CMOS-logic-level inputs.
Overvoltage Protection
Proper power-supply sequencing is recommended for
all CMOS devices. Do not exceed the absolute maxi-
mum ratings because stresses beyond the listed rat-
ings may cause permanent damage to the devices.
Always sequence V+ on first, followed by VL, V-, and
logic inputs. If power-supply sequencing is not possi-
ble, add two small, external signal diodes in series with
supply pins for overvoltage protection (Figure 1).
Adding diodes reduces the analog signal range to 1V
below V+ and 1V above V-, without affecting low switch
resistance and low leakage characteristics. Device
operation is unchanged, and the difference between V+
and V- should not exceed +44V.
V+
D
V-
S
Vg
DG421
DG423/DG425
DG421/DG423/DG425
Improved Low-Power,
CMOS Analog Switches with Latches
6 _______________________________________________________________________________________
D
-15V ( )
V-
RL
VOUT
V+
+15V+5V
VL
GND
VD = 10V for tON
VD = -10V for tOFF
IN
LOGIC
INPUT
REPEAT TEST FOR IN2 AND S2.
CL INCLUDES FIXTURE AND STRAY CAPACITANCE.
CL
SWITCH OUTPUT
S
LOGIC
INPUT
SWITCH
OUTPUT
tR < 20ns
tF < 20ns
VOUT
tOFF
50%
3V
0V
0V
NOTE: LOGIC INPUT WAVEFORM IS INVERTED FOR 
SWITCHES THAT HAVE THE OPPOSITE LOGIC SENSE.
DG421
DG423
DG425
VOUT = VDRL
RL + rDS(ON)
0.9 x VOUT
0.9 x VOUT
-VOUT
tON
*VD = 10V for tON, VD = -10V for tOFF
Figure 2. Switching Time
3V
0
3V
0
3V
0
VOUT
0
WR
IN
RS
SWITCH
OUTPUT
1.5V
tWW tDW tWD
2.0V 0.8V
1.5V
tRStOFF(RS) 0.8 x VOUT
Figure 3. Latch Timing
VOUT is the steady-state output with the switch on. Feedthrough via switch capacitance may result in spikes at the
leading and trailing edge of the output waveform.
______________________________________________Timing Diagrams/Test Circuits
DG421/DG423/DG425
Improved Low-Power,
CMOS Analog Switches with Latches
_______________________________________________________________________________________ 7
0FF0N0FF
VOUT
IN
Q = VOUT x CL
IN DEPENDENT ON SWITCH CONFIGURATION. 
INPUT POLARITY DETERMINED BY SENSE OF SWITCH.
VOUT
DG421
DG423
DG425
Rg
-15V
V-
VOUT
V+
+15V+5V
VgGND
VIN = 3V
WR
D
CL
10nF
RS
VL
S
IN
Figure 5. Charge Injection
_________________________________Timing Diagrams/Test Circuits (continued)
D
-15V
V-
RL2
300
VOUT1
V+
+15V+5V
VL
GND
VD = 10V 
VD = 10V
LOGIC
INPUT
CL INCLUDES FIXTURE AND STRAY CAPACITANCE.
CL2
35pF
S
LOGIC
INPUT
SWITCH
OUTPUT 1
SWITCH
OUTPUT 2
0.9 x VOUT
VOUT1 0.9 x VOUT
tD
50%
3V
0V
0V
0V
VOUT2
tD
D
RL = 1000
CL = 35pF
SRL1
300CL1
35pF
RS
VOUT2
DG423
IN
WR
Figure 4. DG423 Break-Before-Make Interval
-15V
V-
RL
GND
WR
SIGNAL GENERATOR
+15V
V+
10nF
RS
+5V
VL
10nF
D
S
0V or 2.4V
IN
DG421
DG423
DG425
VS
VD
NETWORK
ANALYZER
Figure 6 . Off-Isolation Rejection Ratio
DG421/DG423/DG425
Improved Low-Power,
CMOS Analog Switches with Latches
8 _______________________________________________________________________________________
-15V
V-GND
WR
+15V
V+
10nF
RS
+5V
VL
10nF
D
S
0V or 2.4V
IN
CAPACITANCE
METER
DG421
DG423
DG425
Figure 8. Drain/Source-Off Capacitance
_________________________________Timing Diagrams/Test Circuits (continued)
-15V
V-
RLGND
WR
NETWORK
ANALYZER
SIGNAL GENERATOR
+15V
V+
10nF
RS
+5V
50
0V or 2.4V
0V or 2.4V
N.C.
VL
10nF
D
IN
S
S
IN
DG421
DG423
DG425
D
Figure 7. Crosstalk
-15V
V-GND
WR
+15V
V+
10nF
RS
+5V
VL
10nF
D
S
0V or 2.4V
IN
CAPACITANCE
METER
DG421
DG423
DG425
Figure 9. Drain/Source-On Capacitance
DG421/DG423/DG425
Improved Low-Power,
CMOS Analog Switches with Latches
_______________________________________________________________________________________ 9
_____________________________________________Pin Configurations (continued)
2120
D3
S3
N.C.
S4
D4
18
17
16
15
14
WR
D1
N.C.
S1
IN1
4
5
6
7
8
V-
GND
N.C.
VL
V+
RS
D2
N.C.
S2
IN2
319
13
9101112
DG423
DG425
PLCC
16
15
14
13
12
11
10
9
1
2
3
4
5
6
7
8
S1
IN1
V-
GND
S3
D3
WR
D1
DG423
DG425
VL
V+
IN2
S2
D2
RS
D4
S4
DIP
_____________________________Functional Diagrams/Truth Tables (continued)
WR RS IN SWITCH 1, 2
010
1Off
On
LOGIC "O" 0.8V
LOGIC "1" 2.4V
DG423 TRUTH TABLE
D2
D1
CK
D
Q
TWO SPDT SWITCHES PER PACKAGE
S1
WR
IN1
IN2
RS
S2
DG423
S3
R
Q
CK
D
Q
R
Q
S4
D3
D4
SWITCH 3, 4
On
Off
D2
D1
CK
D
TWO DPST SWITCHES PER PACKAGE
S1
WR
IN1
IN2
RS
S2
DG425
S3
R
Q
CK
D
R
Q
S4
D3
D4
WR RS IN SWITCH
010
1Off
On
LOGIC "O" 0.8V
LOGIC "1" 2.4V
DG425 TRUTH TABLE
LATCH OPERATION TRUTH TABLE
WR
RS
IN
X1
X1
LATCH/SWITCH X
X
X0
0
X
X
Latch operation transparent.
Control data latched in. 
Switches on or off as selected by last IN.
All latches reset. Switches on or off as
when IN = 0, WR = 0, RS = 1.
TOP VIEW
N.C. = No Internal Connection
DG421/DG423/DG425
Improved Low-Power,
CMOS Analog Switches with Latches
10 ______________________________________________________________________________________
* Contact factory for dice specifications.
**Contact factory for availability and processing to MIL-STD-883B.
_Ordering Information (continued)
___________________________________________________________Chip Topographies
0.105"
(2.66mm)
0.082"
(2.08mm)
D1 S1 IN1
N.C.
N.C.
N.C.
N.C.
D2
RS
S2 IN2
V-
GND
VL
V+
WR
0.105"
(2.66mm)
0.082"
(2.08mm)
D1 S1 IN1
D3
S3
S4
D4
D2
RS
S2 IN2
V-
GND
VL
V+
WR
DG421 DG423
DG421 DG423/DG425
VLVL
TRANSISTOR COUNT: 100
SUBSTRATE CONNECTED TO V+
TRANSISTOR COUNT: 100
SUBSTRATE CONNECTED TO V+
PART TEMP. RANGE PIN-PACKAGE
DG423CJ 0°C to +70°C 16 Plastic DIP
DG423CY 0°C to +70°C 16 SO
DG423DJ -40°C to +85°C 16 Plastic DIP
DG423DN -40°C to +85°C 20 PLCC
DG423AK -55°C to +125°C 16 CERDIP**
DG425CJ 0°C to +70°C 16 Plastic DIP
DG425CY 0°C to +70°C 16 SO
DG425DJ -40°C to +85°C 16 Plastic DIP
DG425DN -40°C to +85°C 20 PLCC
DG425AK -55°C to +125°C 16 CERDIP**
DG423C/D 0°C to +70°C Dice*
DG423DY -40°C to +85°C 16 SO
DG423DK -40°C to +85°C 16 CERDIP
DG425C/D 0°C to +70°C Dice*
DG425DY -40°C to +85°C 16 SO
DG425DK -40°C to +85°C 16 CERDIP
DG421/DG423/DG425
Improved Low-Power,
CMOS Analog Switches with Latches
______________________________________________________________________________________ 11
C
AA2
E1
D
E
eA
eB
A3
B1
B
DIM
A
A1
A2
A3
B
B1
C
D
D1
E
E1
e
eA
eB
L
α
MIN
–
0.015
0.125
0.055
0.016
0.050
0.008
0.745
0.005
0.300
0.240
–
0.115
MAX
0.200
–
0.150
0.080
0.022
0.065
0.012
0.765
0.030
0.325
0.280
0.400
0.150
15˚
MIN
–
0.38
3.18
1.40
0.41
1.27
0.20
18.92
0.13
7.62
6.10
–
2.92
MAX
5.08
–
3.81
2.03
0.56
1.65
0.30
19.43
0.76
8.26
7.11
10.16
3.81
15˚
INCHES MILLIMETERS
2.54 BSC
7.62 BSC
0.100 BSC
0.300 BSC
A1
L
D1
e
21-587A
α16-PIN PLASTIC
DUAL-IN-LINE
PACKAGE
________________________________________________________Package Information
C
AD
B1
B
DIM
A
B
B1
C
D
E
E1
e
L
L1
Q
S
S1
α
MIN
–
0.014
0.038
0.008
–
0.220
0.290
0.125
0.150
0.015
–
0.005
MAX
0.200
0.023
0.065
0.015
0.840
0.310
0.320
0.200
–
0.060
0.080
15˚
MIN
–
0.36
0.97
0.20
–
5.59
7.37
3.18
3.81
0.38
–
0.13
MAX
5.08
0.58
1.65
0.38
21.34
7.87
8.13
5.08
–
1.52
2.03
15˚
INCHES MILLIMETERS
2.54 BSC0.100 BSC
Q
L
S1
e
21-590B
16-PIN CERAMIC
DUAL-IN-LINE
PACKAGE
α
S
L1
E
E1
Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent licenses are
implied. Maxim reserves the right to change the circuitry and specifications without notice at any time.
12
__________________Maxim Integrated Products, 120 San Gabriel Drive, Sunnyvale, CA 94086 (408) 737-7600
© 1994 Maxim Integrated Products Printed USA is a registered trademark of Maxim Integrated Products.
DG421/DG423/DG425
Improved Low-Power,
CMOS Analog Switches with Latches
DIM
A
A1
A2
A3
B
B1
C
D
D1
D2
D3
e
MIN
0.165
0.100
0.145
0.020
0.013
0.026
0.009
0.385
0.350
0.290
MAX
0.180
0.110
0.156
–
0.021
0.032
0.011
0.395
0.355
0.330
MIN
4.19
2.54
3.68
0.51
0.33
0.66
0.23
9.78
8.89
7.37
MAX
4.57
2.79
3.96
–
0.53
0.81
0.28
10.03
9.02
8.38
INCHES MILLIMETERS
20-PIN PLASTIC
LEADED CHIP
CARRIER
PACKAGE
21-981A
DD1
D
D1
D3
D2
eB1 B
A3
A
A1
A2
5.08 REF0.200 REF 1.27 REF0.050 REF
C
___________________________________________Package Information (continued)