MPSA92 / MMBTA92 / PZTA92
PNP High Voltage Amplifier
This device is designed for high voltage driver applications.
Sourced from Process 76.
MMBTA92MPSA92 PZTA92
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Symbol Parameter Value Units
VCEO Collector-Emitter Vo ltage 300 V
VCBO Collector-Base Voltage 300 V
VEBO Em it ter - Bas e V oltage 5 . 0 V
ICC ollector Curr ent - Continuous 100 mA
TJ, T stg Operating and Storage Junction Temperature Range -55 to +150 °C
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristic Max Units
MPSA92 *MMBTA92 **PZTA92
PDTo ta l De vice Dissip at i on
Derate above 25°C625
5.0 350
2.8 1,000
8.0 mW
mW/°C
RθJC Thermal Resistance, Junction to Case 83.3 °C/W
RθJA Thermal Resistance, Junction to Ambient 200 357 125 °C/W
CBETO-92
C
B
E
SOT-23
Mark: 2D
BC
C
SOT-223
E
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
**Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.
Discrete POWER & Signal
Technologies
1997 Fairchild Semiconductor Corporation
MPSA92 / MMBTA92 / PZTA92
Electrical Characteristics TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
Symbol Parameter Test Condition s Min Max Un its
V(BR)CEO Collector-Emitter Breakdown Voltage* IC = 1.0 m A , I B = 0 300 V
V(BR)CBO Col lec t or -B ase Breakd ow n Volt ag e IC = 1 00 µA, IE = 0 300 V
V(BR)EBO Em it ter - Bas e B r e akdown Voltage IE = 1 00 µA, I C = 0 5.0 V
ICBO Collector-Cutoff Current VCB = 2 00 V, IE = 0 0.25 µA
IEBO Em it ter - Cutoff Current VEB = 3.0 V, IC = 0 0.1 µA
SMALL SIGNAL CHARACTERISTICS
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
ON CHARACTERISTICS*
hFE DC Cu r rent G ain IC = 1.0 m A, VCE = 1 0 V
IC = 1 0 mA, VCE = 1 0 V
IC = 3 0 mA, VCE = 1 0 V
25
40
25
VCE(sat)Co l lector-E mitter Sa turation Vo ltage IC = 20 mA, IB = 2.0 mA 0.5 V
VBE(sat)Base-Emitter Satur ation Voltage IC = 2 0 mA, IB = 2.0 mA 0.9 V
fTCu rre nt Ga in - Ba ndwidth Product IC = 10 mA, VCE = 2 0 V,
f = 100 MH z 50 MHz
Ccb Collector-Base Capacitance VCB = 2 0 V, IE = 0, f = 1.0 MHz 6.0 pF
Spice Model
PNP (Is=218.9f Xti=3 Eg=1.11 Vaf=100 Bf=99 Ne=1.307 Ise=218.9f Ikf=.2016 Xtb=1.5 Br=24.67 Nc=2 Isc=0
Ikr=0 Rc=7 Cjc=19.88p Mjc=.4876 Vjc=.75 Fc=.5 Cje=81.49p Mje=.3493 Vje=.75 Tr=516.9p Tf=1.395n Itf=1.5
Vtf=22 Xtf=270 Rb=10)
Typical Characteristics
PNP High Voltage Amplifier
(continued)
Collector-Emitter Saturati o n
Voltage vs Collector Current
0.1 1 10 100
0.2
0.4
0.6
I - COL L ECTO R CUR RENT (mA)
V - C OLLECTO R-EMI TTE R VOLTAG E (V)
CESAT
C
ββ = 10
125 ºC
- 40 ºC
25 °C
DC Current Gain
vs Col lect or Curr ent
P6
0.1 1 10 100
0
20
40
60
80
100
120
140
I - COLLECTOR CURRENT (mA)
h - DC CU RREN T GAIN
FE
C
V = 5V
CE
125 ºC
- 40 ºC
25 °C
MPSA92 / MMBTA92 / PZTA92
PNP High Voltage Amplifier
(continued)
Typical Characteristics (continued)
Bas e -Emitt e r Sat u rati on
Vol tage vs Col lector Curr ent
110100
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
I - CO LLECTOR CURRENT (mA)
V - BASE-EMITT ER VOLTAGE (V)
BESAT
C
ββ = 10
125 ºC
- 40 ºC
25 °C
Base-Emitter ON Voltage vs
Colle ctor Current
P6
1 10 100
0.2
0.4
0.6
0.8
1
I - CO L L ECTOR CURR ENT (mA)
V - BASE-EMITTER ON VOLTAGE (V)
BE(ON)
125 ºC
- 40 ºC
25 °C
C
V = 5V
CE
Collecto r -C ut o ff C ur re n t
vs Am b ient Te m per atu re
P6
25 50 75 100 125 150
0.1
1
10
100
T - AMBIENT TEMPERATU RE ( C)
I - CO L L EC TOR CURRE NT (nA)
A
V = 150V
CB
º
CBO
Power Dissipation vs
Ambient Temperature
0 25 50 75 100 125 150
0
0.25
0.5
0.75
1
TEMPERAT URE ( C)
P - PO WER DISSIPAT ION (W)
D
o
SOT-223
TO-92
SOT-23
Junction Capacitance
vs Reverse Bias V oltage
P6
0.1 1 10 100
0.1
1
10
V - REVERSE VOLTAGE ( V)
JUNCTIO N CAPACI TANCE (pF)
C
f = 1.0 MHz ib
Cob
R
Gain Bandwidth Product
v s Collector Current
P76
1102050100
0
20
40
60
80
100
I - COLLECTOR CURRENT (mA)
f - GAIN BANDWIDTH PRODUCT (MHz)
C
T
V = 50V
CE
V = 15V
CE
