F 2000A
InGaAlP-High Brightness-Lumineszenzdiode (617nm, High Optical Power)
InGaAlP High Brightness Light Emitting Diode (617 nm, High Optical Power)
Vorläufige Daten / Preliminary Data
2003-04-08 1
Wesentliche Merkmale
• Optimierte Lichtauskopplung durch
Oberflächenstrukturi erung und Stromvertei lung
• Chipgröße 300 x 300 µm2
• Wellenlänge (typ.) : 617 nm
• Technologie:InGaAIP
• Typ. Lichtfluß: 3.5 lm @ 70 mA (gepulst, im
Power TOPLED® Gehäuse).
Anwendungen
• Ampeln
• Optischer Indikator
• Hinterleuchtung (LCD, Handy, Schalter,
Tasten, Displays, Werbebeleuchtung,
Allgemeinbeleuchtung)
• Beleuchtung im Automobilbereich
(z.B. Instrumentenbeleuchtung, Bremslichter
und Blinklichter)
• Ersatz von Kleinst-G lühlampen
• Markierungsbeleuchtung
• Signal- und Symbolleuchten
Typ
Type Bestellnummer
Orde ring Code Beschreibung
Description
F 2000A Q-67220-C1447 Rot emittierender Chip mit optimierter Lichtauskopplung
durch Oberflächenstrukturierung, Oberseite Anodenan-
schluss
Red emitting ch ip with optimized light extraction due to sur-
face structuring, top side anode connection
Feature
• Optimized light extraction due to surface
structuring and current distribution
• Chip size 300 x 300 µm2
• Wavelength (typ.): 617 nm
• Technology: InGaAIP
• T yp. luminous flux: 3.5 l m @ 70 mA (pulsed, in
Power TOPLED® package)
Applications
• Traffic lights
• optical indicators
• Backlighting (LCD, cellular phones, switches,
keys, displays, illuminated advertising,general
lighting)
• Automotive lighting (e.g. dashboard
backlighting, brake lights, turn signal lamps,
etc.)
• Substitution of micro incandescent lamps
• Marker lights
• Signal and symbol luminaire
2003-04-08 2
F 2000A
Elektrische Werte (TA = 25 °C)
Electrical values1) (TA = 25 °C)
Bezeichnung
Parameter Symbol
Symbol Wert
Value2) Einheit
Unit
min. typ. max.
Dominantwellenlänge
Dominant wavelength
IF = 50 mA, tp = 1.8 ms
λdom 613 623 nm
Sperrspannung
Reverse voltage
IR = 10µA
VR12 V
Durchlaβspannung
Forward voltage
IF = 50 mA, tp = 1.8 ms
VF2.5 V
Lichtstrom
Luminous Flux3)
IF = 50 mA, tp = 1.8 ms
ΦV950 mlm
1) Measurement limits describe actual settings and do not include measurement uncertainties. Each wafer and fragment
of a waf er is subj ect to fi nal t e st ing. The waf er or i ts pie ces are in dividual l y at t ache d on f oi ls ( rin gs). Samp le chips are
picked from each foil and placed on a special carrier for measurement purposes.
Sample-test: Sampling density/samples per cm² (grid): 1,6/cm².
If a sample fails, the distance area to the next non-failure samples is manually removed by a vacuum tool.
All el. values are referenced to the vendor's measurement system (correlation to customer product(s) is required)
2) Typical (refered to as typ.) data are defined as long-term production mean values and are only given for information.
This is not a sp ecified value
3) Luminous flux is measured in integrating sphere
F 2000A
2003-04-08 3
Mechanische Werte
Mechanical values
Bezeichnung
Parameter Symbol
Symbol Wert
Value1) Einheit
Unit
min. typ. max.
Chipkantenlänge (x-Richtung)
Length of chip edge (x-direction) Lx0.28 0.3 0.32 mm
Chipkantenlänge (y-Richtung)
Length of chip edge (y-direction) Ly0.28 0.3 0.32 mm
Durchmesser des Wafers
Diameter of the wafer D100 mm
Chiphöhe
Die height H200 220 240 µm
Bondpaddurchmesser
Diameter of bondpad d109 114 119 µm
Weitere Informationen
Additional information2)
Vorderseitenmetallisierung
Metallization frontside Aluminium
Aluminum
Rückseitenmetallisierung
Metallization backside Goldlegierung
Gold alloy
Trennverfahren
Dicing Sägen
Sawing
Verbindung Chip - Träger
Die bonding Kleben
Epoxy bonding
1) Typica l (ref ered t o as typ. ) data ar e define d as lo ng-te rm produc t ion mea n values and are only give n for inform ati on.
This is not a sp ecified value
2) All chips are checked according to the following procedure and the OSRAM OS specification of the visual inspection
A63501-Q0013-N001-*-76G3:
The visual inspection shall be made in accordance to the "specification of the visual inspection" as referenced.The
visual inspection of chip backsid e is performed with stereo microscope with incident light with 40x-80x magnification.
Areas > ¼ cm² which have an amount of more than 3% failed dies will be removed. The visual inspection of chip
frontside is performed by a stereo microscope with incident light with 40x-80x magnification for 100% of the area of
each wafer. Areas > 1 cm² which have an amount of more than 50% failed dies and areas > 2 cm² which have an
amount of more t han 25% faile d di es will be removed. In are as wi th fail ure densit y high er than 1% each failure di e is
inked individually. On request the visual inspection of chip frontside can be performed by an automated visual
insp ection combined with autom ated inking add itionally. The q uality insp ection (final visual inspection) is perfor med
by production. An additional visual inspection step as special release procedure by QM after the final visual inspection
is not in s ta lled.
F 2000A
2003-04-08 4
fj
Grenzwerte1)
Max i mum Ratings
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
Maximaler Betriebstemperaturbereich
Maximum Operating temperature range Top -40...+100 °C
Maximaler Lagertemperaturbereich
Maximum storage temperature range Tstg -40...+100 °C
Maximaler Durchlaßstrom (TA = 25°C)
Maximum forward current (TA = 25°C) IF70 mA
Maximaler Pulsstrom (TA = 25°C)
Maximum surge Current (TA = 25°C)
tp = 10 µs, D = 0.05
Ipeak 0.1 A
Maximale Sperrschichttemperatur
Maximum junction temperature Tj125 °C
1)Maximum ratings are strongly package dependent and may differ between different packages. The values given
represent the chip in an OSRAM Opto Semiconductor’s Power TOPLED ® package.
F 2000A
2003-04-08 5
Durchlassstrom1) IF = f (VF)
Forward Curr ent
TA = 25 °C
Zu la s sige Im p u ls b el as t b ar k e it1) I F = f (tP)
Permissible Pulse Handling Ca pability
Duty cycle D = paramet er, T A = 25 °C
1) Based on typ.(see page 2, footnote 2 for explanation)
data measured in OSRAM Opto Semiconductor’s
TOPLED® package.
Relative Lichtstärke1) IV/IV(50mA) = f (IF)
Relative Luminous Inten sity
TA = 25 ° C
Zula ssige Impulsbelast barkeit1) IF = f (tP)
Permissible Pulse Handling Capability
Du ty cyc le D = par am e te r, TA = 85 °C
OHL01382
1.3
mA
V
F
I
F
V
1.5 1.7 1.9 2.1 2.3 2.5
102
10
10
-3
-2
10-1
100
101
OHL01505
F
I
0
0.02
0.04
0.06
0.08
0.1
0.12
A
p
t
-5
10 -4
10 -3
10 -2
10 -1
10 0
10 1
10 2
10
0.005
0.05
0.5
s
I
OHL00437
F
-1
10
V (50 mA)
I
10
-3
-2
-1
0
1
10
10
10
10
10
0
10
1
10
2
5
5
5
55mA
I
V
OHL01506
F
I
0
0.02
0.04
0.06
0.08
0.10
0.12
A
p
t
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
0.005
0.05
0.5
s
2003-04-08 6
F 2000A
Maßzeichnung
Chip Outlines
Maße werden als typische1) Werte wie folgt angegeben: mm (inch) / Dimensions are specified as typical1) values as
f ol l ow s: mm (inc h) .
Published by OSRAM Opt o Semiconductors GmbH
Wernerwerkstrasse 2, D-93049 Regensburg
© All Rights Reserved.
Attention please !
The information generally describes the type of component and shall not be considered as assured characteristics or
detail ed specification.
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain
dangerous substances. For information on the types in question pl ease contact our sales org aniz ation.
Handling and Storage Conditions:
The hermetically sealed shipment lot shall be opened under temperature and moisture controlled cleanroom
environment only. Customer has to follow the according rules for disposition of material that can be hazardous for
humans and environment .
Packing
Chips are placed on a blue foil, which is fixed in a y ellow frame of 5 ” diameter.
For shi pment t he wafers of a shi pment lot are arr anged to stacks. The stac ks are hermetically seal ed in plas tic bags to
achieve protection agains t environmental influence (humidity & contamina tion).
Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office.
By agreement we will take packing material back, if it is sorted. You will have to bear the costs of tran sport. For packing
mater i al tha t i s ret ur ned t o u s unsor te d o r w hic h w e are no t obl ig ed to ac cept , we shal l hav e to inv oi ce y ou f or any c os t s
incurred.
Further Conditions:
If not otherwise arranged, the “General Conditions for the supply of products and services of the electrical and
elec tro nics ind ustr y” appl y f or any shipme nt, ju st as the Sup plier Addendu m " Chi p busi ness" t o the “Gen eral Condit ion s
for the s upply of products and services of the elec trical and elec tronics indus try”. If these documents are not familiar to
you, pl ease reque st them at ou r nearest sales offi ce.
Components used in life-support devices or systems must be expressly authorized by us for such purpose!
Critical components2), may only be used in life-support devices or systems3) with the express written approval of
OSRAM OS.
1) Typical (refered to as typ.) data are defined as long-term production mean values and are only given for information.
This is not a specified v alue.
2)A critical component is a c om pone nt us ed i n a life-support devi ce or syst em whose fai l ure can r eas onably be expe cte d to
cause the failure of that life-suppo r t d evice o r sys tem, or to af fect its safety or effectivenes s o f that dev ice or system.
3)Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain
and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered.
0.3(0.0118)
0.114(0.0045)
0.22(0.0087)
n-contact
p-contact
