IXXR100N60B3H1 XPTTM 600V IGBT GenX3TM w/ Diode VCES IC110 VCE(sat) tfi(typ) (Electrically Isolated Tab) = = = 600V 68A 1.80V 150ns Extreme Light Punch Through IGBT for 10-30kHz Switching ISOPLUS247TM Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25C to 150C TJ = 25C to 150C, RGE = 1M 600 600 V V VGES VGEM Continuous Transient 20 30 V V IC25 IC110 IF90 ICM TC TC TC TC 145 68 54 440 A A A A IA EAS TC = 25C TC = 25C 50 600 A mJ SSOA (RBSOA) VGE = 15V, TVJ = 150C, RG = 2 Clamped Inductive Load ICM = 200 @VCE VCES A tsc (SCSOA) VGE = 15V, VCE = 360V, TJ = 150C RG = 10, Non Repetitive 10 s PC TC = 25C 400 W -55 ... +150 150 -55 ... +150 C C C z 300 260 C C z 2500 V~ 20..120/4.5..27 N/lb. 5 g = 25C(Chip Capability) = 110C = 90C = 25C, 1ms Maximum Lead Temperature for Soldering Plastic Body for 10s VISOL 50/60 Hz, 1 Minute FC Mounting Force Weight z z z z z z Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 250A, VGE = 0V 600 VGE(th) IC = 250A, VCE = VGE 3.0 ICES VCE = VCES, VGE = 0V VCE = 0V, VGE = 20V VCE(sat) IC 5.5 (c) 2013 IXYS CORPORATION, All Rights Reserved V 50 A 4 mA 1.50 1.77 = Collector Silicon Chip on Direct-Copper Bond (DCB) Substrate Isolated Mounting Surface 2500V~ Electrical Isolation Optimized for 10-30kHz Switching Square RBSOA Avalanche Rated Short Circuit Capability Anti-Parallel Ultra Fast Diode High Current Handling Capability High Power Density Low Gate Drive Requirement Applications V z = 70A, VGE = 15V, Note 1 TJ = 150C C Advantages z IGES Isolated Tab E Features z TJ = 125C C G = Gate E = Emitter z TJ TJM Tstg TL TSOLD G 100 nA 1.80 V V z z z z z z Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines DS100420B(04/13) IXXR100N60B3H1 Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) gfs Cies Coes Cres Qg(on) Qge Qgc td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff Characteristic Values Min. Typ. Max. IC = 60A, VCE = 10V, Note 1 22 VCE = 25V, VGE = 0V, f = 1MHz IC = 70A, VGE = 15V, VCE = 0.5 * VCES Inductive load, TJ = 25C IC = 70A, VGE = 15V VCE = 360V, RG = 2 Note 2 Inductive load, TJ = 150C IC = 70A, VGE = 15V VCE = 360V, RG = 2 Note 2 RthJC RthCS ISOPLUS247 (IXXR) Outline 40 S 4860 475 83 pF pF pF 143 nC 37 nC 60 nC 30 70 1.9 120 150 2.0 ns ns mJ ns ns mJ 2.8 32 60 2.3 150 200 2.8 ns ns mJ ns ns mJ 0.15 0.31 C/W C/W 1 - Gate 2,4 - Collector 3 - Emiiter Reverse Diode (FRED) Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) VF IF = 60A, VGE = 0V, Note 1 IRM IF = 60A, VGE = 0V, -diF/dt = 200A/s, VR = 300V trr Characteristic Values Min. Typ. Max. TJ = 150C 1.6 1.4 TJ = 100C 8.3 A 140 ns V V 0.62 C/W RthJC Notes: 2.5 1.8 1. Pulse test, t 300s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXXR100N60B3H1 Fig. 2. Extended Output Characteristics @ T J = 25C Fig. 1. Output Characteristics @ T J = 25C 350 140 VGE = 15V VGE = 15V 13V 12V 120 11V 100 13V 250 80 10V 60 9V 40 IC - Amperes IC - Amperes 14V 300 12V 200 11V 150 10V 100 8V 9V 20 50 7V 6V 0 0 0.4 0.8 1.2 1.6 2 2.4 8V 7V 0 2.8 0 2 4 6 8 14 16 18 20 150 175 1.8 VGE = 15V 13V 12V 120 VGE = 15V 11V 100 10V 80 60 9V 40 8V 7V 5V 0 0.5 1 1.5 2 2.5 3 C = 140A 1.4 1.2 I C = 70A 1.0 0.8 20 0 I 1.6 VCE(sat) - Normalized 140 IC - Amperes 12 Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics @ T J = 150C I C = 35A 0.6 -50 3.5 -25 0 25 VCE - Volts 50 75 100 125 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 5.0 180 TJ = 25C 4.5 160 140 4.0 3.5 I 3.0 C IC - Amperes VCE - Volts 10 VCE - Volts VCE - Volts = 140A 2.5 TJ = 150C 25C - 40C 100 80 60 70A 2.0 120 40 1.5 20 35A 1.0 0 8 9 10 11 12 VGE - Volts (c) 2013 IXYS CORPORATION, All Rights Reserved 13 14 15 4 5 6 7 8 VGE - Volts 9 10 11 IXXR100N60B3H1 Fig. 8. Gate Charge Fig. 7. Transconductance 80 16 TJ = - 40C 70 25C 60 150C 50 I C = 70A I G = 10mA 12 VGE - Volts g f s - Siemens VCE = 300V 14 40 30 10 8 6 20 4 10 2 0 0 0 20 40 60 80 100 120 140 160 180 200 0 20 40 60 80 100 120 140 QG - NanoCoulombs IC - Amperes Fig. 9. Capacitance Fig. 10. Reverse-Bias Safe Operating Area 220 10,000 180 160 1,000 IC - Amperes Capacitance - PicoFarads 200 Cies Coes 100 140 120 100 80 60 Cres 40 f = 1 MHz 20 0 100 10 0 5 10 15 20 25 30 35 40 TJ = 150C RG = 2 dv / dt < 10V / ns 150 200 250 300 350 400 450 500 550 600 650 VCE - Volts VCE - Volts Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Forward-Bias Safe Operating Area 1 1000 VCE(sat) Limit 25s 100s 10 1ms Z(th)JC - C / W ID - Amperes 100 0.1 0.01 1 TJ = 150C 10ms TC = 25C Single Pulse DC 0.1 1 10 100 100ms 1000 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.001 0.00001 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 IXXR100N60B3H1 Fig. 13. Inductive Switching Energy Loss vs. Gate Resistance 4.5 5 7 Eoff 4.0 Eon - Eoff --6 TJ = 150C , VGE = 15V 4 2.5 3 I C 2.0 3 3 4 5 6 7 1 2 8 9 10 11 12 13 14 2 TJ = 25C 1 0 1 2 3 2 = 50A 1.5 4 VCE = 360V TJ = 150C Eoff - MilliJoules Eoff - MilliJoules I C = 100A 20 15 30 40 50 RG - Ohms 5 3 2 2 I C = 50A 1 1 0 75 100 I 260 220 180 I 3 4 5 6 7 120 TJ = 25C 100 80 50 60 70 9 10 11 12 13 14 15 80 IC - Amperes (c) 2013 IXYS CORPORATION, All Rights Reserved tfi 90 40 100 td(off) - - - - 240 220 RG = 2 , VGE = 15V 200 VCE = 360V I C = 100A 220 180 200 160 180 140 I C = 50A 160 120 140 100 120 80 100 25 50 75 100 TJ - Degrees Centigrade 125 60 150 t d(off) - Nanoseconds 200 150 50 8 Fig. 18. Inductive Turn-off Switching Times vs. Junction Temperature 260 280 160 40 180 = 100A 100 240 200 30 C 140 280 320 240 TJ = 150C 20 260 220 2 t d(off) - Nanoseconds t f i - Nanoseconds td(off) - - - - VCE = 360V 250 = 50A 100 t f i - Nanoseconds tfi RG = 2 , VGE = 15V 300 C RG - Ohms Fig. 17. Inductive Turn-off Switching Times vs. Collector Current 350 300 140 0 150 125 340 td(off) - - - - TJ - Degrees Centigrade 400 0 100 VCE = 360V t f i - Nanoseconds 3 50 90 t d(off) - Nanoseconds I C = 100A 25 80 TJ = 150C, VGE = 15V 300 4 VCE = 360V Eon - MilliJoules Eoff - MilliJoules tfi ---- RG = 2 , VGE = 15V 4 70 Fig. 16. Inductive Turn-off Switching Times vs. Gate Resistance 340 5 Eon 60 IC - Amperes Fig. 15. Inductive Switching Energy Loss vs. Junction Temperature Eoff 5 ---- Eon - MilliJoules 5 Eon - MilliJoules 3.5 Eon RG = 2 , VGE = 15V 4 VCE = 360V 3.0 Fig. 14. Inductive Switching Energy Loss vs. Collector Current IXXR100N60B3H1 Fig. 20. Inductive Turn-on Switching Times vs. Collector Current Fig. 19. Inductive Turn-on Switching Times vs. Gate Resistance 180 td(on) - - - - 76 TJ = 150C, VGE = 15V VCE = 360V 140 60 100 52 80 I C 44 = 50A 60 36 40 28 20 3 4 5 6 7 8 9 10 11 12 13 14 180 37 td(on) - - - - 36 RG = 2 , VGE = 15V 35 VCE = 360V 120 34 100 I C 33 = 100A 80 32 60 31 I C = 50A 40 t d(on) - Nanoseconds t r i - Nanoseconds 140 30 20 29 0 25 50 75 80 32 TJ = 150C, 25C 60 30 40 28 20 26 30 40 50 60 70 IC - Amperes Fig. 21. Inductive Turn-on Switching Times vs. Junction Temperature 160 34 20 15 RG - Ohms tri 100 0 20 2 36 RG = 2 , VGE = 15V 100 125 28 150 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 80 90 24 100 t d(on) - Nanoseconds C = 100A t d(on) - Nanoseconds I td(on) - - - - VCE = 360V 68 120 38 tri 120 t r i - Nanoseconds 160 t r i - Nanoseconds 140 84 tri IXXR100N60B3H1 160 A 140 IF 4000 80 TVJ= 100C nC 120 3000 TVJ= 25C 100 TVJ=150C 60 IF=120A IF= 60A Qr TVJ=100C 80 TVJ= 100C A IRM IF=120A IF= 60A 2000 40 1000 20 60 40 20 0 0 1 2 0 100 V A/s 1000 -diF/dt VF Fig. 23 Typ. Reverse Recovery Charge Qrr Fig. 22 Forward Current IF vs. VF TVJ= 100C 140 2.0 ns 130 trr 1.5 Kf IRM 0.5 Qr 0 110 0 40 400 600 A/s 800 1000 -diF/dt 20 1.6 V V FR 15 s tfr VFR 10 1.2 tfr 0.8 100 5 80 120 C 160 TVJ Parameters Fig. 25 Typ. Dynamic Qrr, IRM 80 0 200 400 600 800 A/s 1000 0 0.4 TVJ= 100C 90 0.0 200 Fig. 24 Typ. Peak Reverse Current IRM IF=120A IF= 60A 120 1.0 0 0 200 400 -diF/dt Time t Fig. 26 Typ Recovery rr 0.0 600 A/s 800 1000 diF/dt Constants for ZthJC calculation: 1 i K/W 1 2 0.1 Rthi (K/W) ti (s) 0.324 0.125 0.0052 0.0003 Z thJC 0.01 0.001 0.0001 0.00001 DSEP 60-06A 0.0001 0.001 0.01 0.1 s t 1 Fig. 27. Maximum Transient Thermal Impedance (c) 2013 IXYS CORPORATION, All Rights Reserved IXYS REF: IXX_100N60B3(7D)12-01-11-B