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October 2000
2000 Fairchild Semiconductor Corporation FDN5618P Rev C(W)
FDN5618P
60V P-Channel Logic Level PowerTrench
MOSFET
General Description
This 60V P-Channel MOSFET uses Fairchild’s high
voltage PowerTrench process. It has been optimized for
power management applications.
Applications
• DC-DC converters
• Load switch
• Power management
Features
• –1.25 A, –60 V. RDS(ON) = 0.170 Ω @ VGS = –10 V
R
DS(ON) = 0.230 Ω @ VGS = –4.5 V
• Fast switching speed
• High performance trench technology for extremely
low RDS(ON)
G
D
S
SuperSOT -3
TM
D
S
G
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol Parameter Ratings Units
VDSS Drain-Source Voltage –60 V
VGSS Gate-Source Voltage ±20 V
IDDrain Current – Continuous (Note 1a) –1.25 A
– Pulsed –10
Maximum Power Dissipation (Note 1a) 0.5
PD(Note 1b) 0.46
W
TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 250 °C/W
RθJC Thermal Resistance, Junction-to-Case (Note 1) 75 °C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
618 FDN5618P 7’’ 8mm 3000 units
FDN5618P
FDN5618P Rev C(W)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = –250 µA–60 V
∆BVDSS
===∆TJ
Breakdown Voltage Temperature
Coefficient
ID = –250 µA,Referenced to 25°C–58 mV/°C
IDSS Zero Gate Voltage Drain Current VDS = –48 V, VGS = 0 V –1 µA
IGSSF Gate–Body Leakage, Forward VGS = 20V, VDS = 0 V 100 nA
IGSSR Gate–Body Leakage, Reverse VGS = –20 V VDS = 0 V –100 nA
On Characteristics (Note 2)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = –250 µA–1 –1.6 –3 V
∆VGS(th)
===∆TJ
Gate Threshold Voltage
Temperature Coefficient
ID = –250 µA,Referenced to 25°C4mV/°C
RDS(on) Static Drain–Source
On–Resistance
VGS = –10 V, ID = –1.25 A
VGS = –4.5 V, ID = –1.0 A
VGS = –10 V, ID = –3 A TJ=125°C
0.148
0.185
0.245
0.170
0.230
0.315
Ω
ID(on) On–State Drain Current VGS = –10 V, VDS = –5 V –5 A
gFS Forward Transconductance VDS = –5 V, ID = –1.25 A 4.3 S
Dynamic Characteristics
Ciss Input Capacitance 430 pF
Coss Output Capacitance 52 pF
Crss Reverse Transfer Capacitance
VDS = –30 V, V GS = 0 V,
f = 1.0 MHz
19 pF
Switching Characteristics (Note 2)
td(on) Turn–On Delay Time 6.5 13 ns
trTurn–On Rise Time 8 16 ns
td(off) Turn–Off Delay Time 16.5 30 ns
tfTurn–Off Fall Time
VDD = –30 V, ID = –1 A,
VGS = –10 V, RGEN = 6 Ω
48ns
QgTotal Gate Charge 8.6 13.8 nC
Qgs Gate–Source Charge 1.5 nC
Qgd Gate–Drain Charge
VDS = –30 V, ID = –1.25 A,
VGS = –10 V
1.3 nC
Drain–Source Diode Characteristics and Maximum Ratings
ISMaximum Continuous Drain–Source Diode Forward Current –0.42 A
VSD Drain–Source Diode Forward
Voltage
VGS = 0 V, IS = –0.42 (Note 2) –0.7 –1.2 V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 250°C/W when mounted on a
0.02 in2 pad of 2 oz. copper.
b) 270°C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width ≤=300 µs, Duty Cycle ≤=2.0
FDN5618P
FDN5618P Rev C(W)
Typical Characteristics
0
1
2
3
4
5
01234
-VDS, DRAIN-SOURCE VOLTAGE (V)
-4.5V
-
6.0V
-2.5V
-4.0V
-3.5V
VGS = -10V
-3.0V
0.8
1
1.2
1.4
1.6
1.8
2
2.2
012345
-ID, DRAIN CURRENT (A)
VGS = -3.0V
-4.0V
-1
0
V
-4.5V
-6.0V
-3.5V
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.8
0.9
1
1.1
1.2
1.3
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
ID = -1.25A
VGS = -10V
0.1
0.2
0.3
0.4
0.5
0.6
246810
-VGS, GATE TO SOURCE VOLTAGE (V)
ID = -0.65 A
TA = 125oC
TA = 25oC
Figure 3. On-Resistance Variation
withTemperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
1
2
3
4
5
6
11.522.533.54
-VGS, GATE TO SOURCE VOLTAGE (V)
TA = 125oC25oC
VDS = - 5V
-55oC
0.0001
0.001
0.01
0.1
1
10
0 0.2 0.4 0.6 0.8 1 1.2 1.4
-VSD, BODY DIODE FORWARD VOLTAGE (V)
TA = 125oC
25oC
-55oC
VGS = 0V
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDN5618P
FDN5618P Rev C(W)
Typical Characteristics
0
2
4
6
8
10
0246810
Qg, GATE CHARGE (nC)
ID = -1.25A VDS = -20V
-40V
-30V
0
100
200
300
400
500
600
700
024681012
-VDS, DRAIN TO SOURCE VOLTAGE (V)
CISS
CRSS
COSS
f = 1MHz
VGS = 0 V
Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.
0.001
0.01
0.1
1
10
100
0.1 1 10 100
-VDS, DRAIN-SOURCE VOLTAGE (V)
-I
D
, DRAIN CURRENT (A
)
DC 10s
1s
100ms
RDS(ON) LIMIT
VGS =-10V
SINGLE PULSE
RθJA = 270oC/W
TA = 25oC
10ms
1ms
0
5
10
15
20
0.001 0.01 0.1 1 10 100 1000
t1, TIME (sec)
SINGLE PULSE
RθJA = 270°C/W
TA = 25°C
Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum
Power Dissipation.
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
t1, TIME (sec)
RθJA(t) = r(t) + RθJA
RθJA = 270 °C/W
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
P(pk)
t1
t2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDN5618P
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not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
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Advance Information
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No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
QFET™
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FASTr™
GlobalOptoisolator™
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HiSeC™
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OPTOLOGIC™
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PowerTrench®
Rev. F1
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ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
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regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
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