ES3A thru ES3D Vishay Semiconductors formerly General Semiconductor Surface Mount Ultrafast Plastic Rectifier DO-214AB (SMC) Reverse Voltage 50 to 200V Forward Current 3.0A Reverse Recovery Time 20ns Cathode Band 0.245 (6.22) 0.220 (5.59) 0.126 (3.20) 0.114 (2.90) Mounting Pad Layout 0.185 MAX. (4.69 MAX.) 0.280 (7.11) 0.260 (6.60) 0.121 MIN. (3.07 MIN.) 0.012 (0.305) 0.006 (0.152) 0.103 (2.62) 0.079 (2.06) 0.060 MIN. (1.52 MIN.) Dimensions in inches and (millimeters) 0.060 (1.52) 0.030 (0.76) 0.320 (8.13) 0.305 (7.75) 0.320 REF 0.008 (0.203) Max. Features * Plastic package has Underwriters Laboratories Flammability Classification 94V-0 * Ideally suited for use in very high frequency switching power supplies, inverters and as free wheeling diodes * Ultrafast recovery time for high efficiency * Excellent high temperature switching * Glass passivated junction * High temperature soldering guaranteed: 250C/10 seconds, at terminals Mechanical Data Case: JEDEC DO-214AB molded plastic body over passivated chip Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Weight: 0.007 ounce, 0.21 gram Maximum Ratings & Thermal Characteristics Ratings at 25C ambient temperature unless otherwise specified. Parameter Device marking code Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current at TL = 100C Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load (JEDEC Method) Typical thermal resistance (1) Operating junction and storage temperature range Electrical Characteristics Symbol VRRM VRMS VDC IF(AV) ES3A EA 50 35 50 ES3B EB 100 70 100 ES3C EC 150 105 150 ES3D ED 200 140 200 Unit 3.0 V V V A IFSM 100 A RJA RJL TJ, TSTG 47 12 -55 to +150C C/W C Ratings at 25C ambient temperature unless otherwise specified. Maximum instantaneous forward voltage at 3.0A (2) Maximum DC reverse current TA = 25C at rated DC blocking voltage TA = 100C Maximum reverse recovery time IF = 0.5A, IR = 1.0A, Irr = 0.25A Maximum reverse recovery time TJ = 25C IF=3.0A, VR=30V, di/dt=50A/s, Irr=10% IRM TJ = 100C Maximum stored charge TJ = 25C IF=3.0A, VR=30V, di/dt=50A/s, Irr=10% IRM TJ = 100C Typical junction capacitance at 4.0V, 1MHz VF IR trr trr Qrr CJ 0.90 10 500 A 20 ns 30 50 15 35 45 V ns nC pF Notes: (1) Units mounted on P.C.B. with 0.31 x 0.31" (8.0 x 8.0mm) copper pad areas (2) Pulse test: 300s pulse width, 1% duty cycle Document Number 88589 02-Jul-02 www.vishay.com 1 ES3A thru ES3D Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25C unless otherwise noted) Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Fig. 1 - Maximum Forward Current Derating Curve 150 Peak Forward Surge Current (A) Average Forward Rectified Current (A) 3.0 2.0 1.0 Resistive or Inductive Load P.C.B. Mounted on 0.31 x 0.31" (8.0 x 8.0mm) Copper Pad Areas 8.3ms Single Half Sine-Wave (JEDEC Method) at TL = 100C 125 100 75 50 25 0 0 80 90 100 110 120 130 140 150 10 100 Number of Cycles at 60 HZ Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 4 - Typical Reverse Leakage Characteristics 100 1,000 Instantaneous Reverse Leakage Current (A) Instantaneous Forward Current (A) 1 Lead Temperature (C) 100 10 1 TJ = 25C Pulse Width = 300s 1% Duty Cycle 0.1 0.01 0.4 TJ = 100C 10 TJ = 75C 1 TJ = 25C 0.1 0.01 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Instantaneous Forward Voltage (V) 0 20 40 60 80 100 Percent of Rated Peak Reverse Voltage (%) Fig. 5 - Typical Junction Capacitance Junction Capacitance (pF) 50 TJ = 25C f = 1.0 MHZ Vsig = 50mVp-p 40 30 20 10 0 0.1 1 10 100 Reverse Voltage (V) www.vishay.com 2 Document Number 88589 02-Jul-02