ES3A thru ES3D
Vishay Semiconductors
for merly General Semiconductor
Document Number 88589 www.vishay.com
02-Jul-02 1
Surface Mount Ultrafast Plastic Rectifier
Reverse V oltage 50 to 200V
Forward Current 3.0A
Reverse Recovery Time 20ns
0.280 (7.11)
0.260 (6.60) 0.012 (0.305)
0.006 (0.152)
0.008
(0.203)
Max.
0.320 (8.13)
0.305 (7.75)
0.060 (1.52)
0.030 (0.76)
0.245 (6.22)
0.220 (5.59)
0.126 (3.20)
0.114 (2.90)
0.103 (2.62)
0.079 (2.06)
Cathode Band
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter Symbol ES3A ES3B ES3C ES3D Unit
Device mar king code EA EB EC ED
Maximum repetitive peak reverse voltage VRRM 50 100 150 200 V
Maximum RMS voltage VRMS 35 70 105 140 V
Maximum DC blocking voltage VDC 50 100 150 200 V
Maximum average forward rectified current at TL = 100°C IF(AV) 3.0 A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC Method) IFSM 100 A
Typical ther mal resistance (1) RΘJA 47
RΘJL 12 °C/W
Operating junction and storage temperature range TJ, TSTG – 55 to +150°C °C
Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Maximum instantaneous forward voltage at 3.0A (2) VF0.90 V
Maximum DC reverse current TA = 25°C IR10 µA
at rated DC blocking voltage TA = 100°C 500
Maximum reverse recovery time trr 20 ns
IF= 0.5A, IR= 1.0A, Irr = 0.25A
Maximum reverse recovery time TJ = 25°C 30
IF=3.0A, VR=30V, di/dt=50A/µs, Irr=10% IRM TJ = 100°C trr 50 ns
Maximum stored charge TJ = 25°C Qrr 15 nC
IF=3.0A, VR=30V, di/dt=50A/µs, Irr=10% IRM TJ = 100°C 35
Typical junction capacitance at 4.0V, 1MHz CJ45 pF
Notes: (1) Units mounted on P.C.B. with 0.31 x 0.31” (8.0 x 8.0mm) copper pad areas
(2) Pulse test: 300µs pulse width, 1% duty cycle
Features
• Plastic package has Underwriters Laboratories
Flammability Classification 94V-0
• Ideally suited for use in very high frequency switching
power supplies, inver ters and as free wheeling diodes
• Ultrafast recover y time for high efficiency
• Excellent high temperature switching
• Glass passivated junction
•
High temperature soldering guaranteed: 250°C/10 seconds,
at terminals
Mechanical Data
Case: JEDEC DO-214AB molded plastic body over
passivated chip
Terminals: Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity: Color band denotes cathode end
Weight: 0.007 ounce, 0.21 gram
DO-214AB (SMC)
0.185 MAX.
(4.69 MAX.)
0.121 MIN.
(3.07 MIN.)
0.060 MIN.
(1.52 MIN.)
0.320 REF
Mounting Pad Layout
Dimensions in inches
and (millimeters)
ES3A thru ES3D
Vishay Semiconductors
for merly General Semiconductor
www.vishay.com Document Number 88589
202-Jul-02
Ratings and
Characteristic Curves(TA= 25°C unless otherwise noted)
0
25
50
75
100
125
150
1 10010
Fig. 2 – Maximum Non-Repetitive Peak
Forward Surge Current
Peak Forward Surge Current (A)
Number of Cycles at 60 HZ
0
3.0
80 90 100 110 120 130 140 150
Fig. 1 – Maximum Forward Current
Derating Curve
Average Forward Rectified Current (A)
Lead Temperature (°C)
0.4 0.6 0.8 1.0 1.2 1.4 1.6
Instantaneous Forward Voltage (V)
020 6040 10080
Fig. 4 – Typical Reverse Leakage
Characteristics
Instantaneous Reverse Leakage Current
(µA)
Percent of Rated Peak Reverse Voltage (%)
2.0
1.0
Resistive or Inductive Load
P.C.B. Mounted on 0.31 x 0.31"
(8.0 x 8.0mm) Copper Pad Areas
0.01
0.1
10
1
100
Instantaneous Forward Current (A)
TJ = 25°C
TJ = 75°C
TJ = 100°C
Rev erse Voltage (V)
Junction Capacitance (pF)
0.1 1 10 100
20
10
30
40
50
0
0.01
0.1
10
1
100
1,000
Fig. 5 – Typical Junction Capacitance
8.3ms Single Half Sine-Wave
(JEDEC Method) at TL = 100°C
1.8
TJ = 25°C
Pulse Width = 300µs
1% Duty Cycle
TJ = 25°C
f = 1.0 MHZ
Vsig = 50mVp-p
Fig. 3 – Typical Instantaneous
Forward Characteristics
