SEMICONDUCTOR KTC3265 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR LOW FREQUENCY POWER AMPLIFIER APPLICATION. POWER SWITCHING APPLICATION. E B L L FEATURES *Low Saturation Voltage D *High DC Current Gain : hFE=100320. 3 H G A 2 : VCE(sat)=0.4V(Max.) (IC=500mA, IB=20mA). 1 *Suitable for Driver Stage of Small Motor. *Complementary to KTA1298. Q *Small Package. P K J N C P DIM A B C D E G H J K L M N P Q MILLIMETERS 2.93 +_ 0.20 1.30+0.20/-0.15 1.30 MAX 0.40+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 0.1 MAX M MAXIMUM RATING (Ta=25) 1. EMITTER CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 35 V Collector-Emitter Voltage VCEO 30 V Emitter-Base Voltage VEBO 5 V Collector Current IC 800 mA Base Current IB 160 mA Collector Power Dissipation PC 200 mW Junction Temperature Tj 150 Tstg -55150 Storage Temperature Range 2. BASE 3. COLLECTOR SOT-23 Marking h FE Rank Lot No. E Type Name ELECTRICAL CHARACTERISTICS (Ta=25) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=30V, IE=0 - - 100 nA Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 100 nA Collector-Emitter Breakdown Voltage V(BR)CEO VEB=10mA, IB=0 30 - - V Emitter-Base Breakdown Voltage V(BR)EBO IE=1mA, IC=0 5 - - V hFE(1) (Note) VCE=1V, IC=100mA 100 - 320 hFE(2) VCE=1V, IC=800mA 40 - - VCE(sat) IC=500mA, IB=20mA - - 0.5 V 0.5 - 0.8 V VCE=5V, IC=10mA, f=100MHz - 120 - MHz VCB=10V, IE=0, f=1MHz - 13 - pF DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Voltage VBE Transition Frequency fT Cob Collector Output Capacitance Note : hFE(1) Classification 1998. 6. 15 O:100200, VCE=1V, IC=10mA Y:160320 Revision No : 1 1/2 KTC3265 h FE - I C I C - V CE 1k COMMON EMITTER Ta=25 C 800 DC CURRENT GAIN h FE 5 6 4 3 600 2 400 I B =1mA 200 0 2 6 8 50 30 COMMON EMITTER VCE =1V 3 10 30 100 300 COLLECTOR-EMITTER VOLTAGE V CE (V) COLLECTOR CURRENT I C (mA) VCE(sat) - I C I C - V BE 0.05 Ta=-25 C 0.03 0.01 400 5 C C 100 Ta= 0.1 5 C Ta=25 C V CE =1V 600 Ta=-2 0.3 COMMON EMITTER C I C /I B =25 1k 800 Ta=2 COMMON EMITTER 200 0 1 3 10 30 300 100 1k COLLECTOR CURRENT I C (mA) COLLECTOR POWER DISSIPATION P C (mW) Ta=-25 C 100 1 1 0.5 Ta=25 C 10 COLLECTOR CURRENT I C (mA) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 4 Ta=100 C 300 10 0 0 500 Ta= 100 COLLECTOR CURRENT I C (mA) 1k 0 0.2 0.4 0.6 0.8 1.0 BASE-EMITTER VOLTAGE V BE (V) P C - Ta 240 200 160 120 80 40 0 0 40 80 120 160 AMBIENT TEMPERATURE Ta ( C) 1998. 6. 15 Revision No : 1 2/2