
1998. 6. 15 1/2
SEMICONDUCTOR
TECHNICAL DATA
KTC3265
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 1
LOW FREQUENCY POWER AMPLIFIER APPLICATION.
POWER SWITCHING APPLICATION.
FEATURES
ยทHigh DC Current Gain : hFE=100๏ฝ320.
ยทLow Saturation Voltage
: VCE(sat)=0.4V(Max.) (IC=500mA, IB=20mA).
ยทSuitable for Driver Stage of Small Motor.
ยทComplementary to KTA1298.
ยทSmall Package.
MAXIMUM RATING (Ta=25โ)
DIM MILLIMETERS
SOT-23
A
B
C
D
E
2.93 0.20
1.30+0.20/-0.15
0.40+0.15/-0.05
2.40+0.30/-0.20
G 1.90
H
J
K
L
M
N
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
Q 0.1 MAX
0.20 MIN
1.00+0.20/-0.10
M
J
K
E
1
23
H
G
A
N
C
B
D
1.30 MAX
LL
PP
P7
+
_
Q
1. EMITTER
2. BASE
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Ta=25โ)
Note : hFE(1) Classification O:100๏ฝ200, Y:160๏ฝ320
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 35 V
Collector-Emitter Voltage VCEO 30 V
Emitter-Base Voltage VEBO 5 V
Collector Current IC800 mA
Base Current IB160 mA
Collector Power Dissipation PC200 mW
Junction Temperature Tj150 โ
Storage Temperature Range Tstg -55๏ฝ150 โ
h Rank
Type Name
Marking
Lot No.
E
FE
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=30V, IE=0 - - 100 nA
Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 100 nA
Collector-Emitter Breakdown Voltage V(BR)CEO VEB=10mA, IB=0 30 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE=1mA, IC=0 5 - - V
DC Current Gain
hFE(1) (Note) VCE=1V, IC=100mA 100 - 320
hFE(2) VCE=1V, IC=800mA 40 - -
Collector-Emitter Saturation Voltage VCE(sat) IC=500mA, IB=20mA - - 0.5 V
Base-Emitter Voltage VBE VCE=1V, IC=10mA 0.5 - 0.8 V
Transition Frequency fTVCE=5V, IC=10mA, f=100MHz - 120 - MHz
Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 13 - pF