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©2000 Fairchild Semiconductor Corporation 1www.fairchildsemi.com
FGL60N100BNTD Rev. C2
FGL60N100BNTD — 1000 V, 60 A NPT Trench IGBT
March 2014
Absolute Maximum Ratings
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol Description Ratings Unit
VCES Collector to Emitter Voltage 1000 V
VGES Gate to Emitter Voltage 25 V
IC
Collector Current @ TC = 25oC60 A
Collector Current @ TC = 100oC42 A
ICM (1) Pulsed Collector Current @ TC = 25oC 200 A
IFDiode Continuous Forward Current @ TC = 100oC 15 A
PD
Maximum Power Dissipation @ TC = 25oC180 W
Maximum Power Dissipation @ TC = 100oC72 W
TJ Operating Junction Temperature -55 to +150 oC
Tstg Storage Temperature Range -55 to +150 oC
TL
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds 300 oC
Symbol Parameter Ratings Unit
RJC(IGBT) Thermal Resistance, Junction to Case 0.69 oC/W
RJC(Diode) Thermal Resistance, Junction to Case 2.08 oC/W
RJA Thermal Resistance, Junction to Ambient 25 oC/W
FGL60N100BNTD
1000 V, 60 A NPT Trench IGBT
Features
• High Speed Switching
• Low Saturation Voltage: VCE(sat) = 2.5 V @ IC = 60 A
• High Input Impedance
• Built-in Fast Recovery Diode
Applications
• UPS, Welder
General Description
Using Fairchild's proprietary trench design and advanced NPT
technology, the 1000V NPT IGBT offers superior conduction
and switching performances, high avalanche ruggedness and
easy parallel operation. This device offers the optimum perfor-
mance for hard switching application such as UPS, welder
applications.
G
E
C
TO-264 3L
G C E
©2000 Fairchild Semiconductor Corporation 2www.fairchildsemi.com
FGL60N100BNTD Rev. C2
FGL60N100BNTD — 1000 V, 60 A NPT Trench IGBT
Package Marking and Ordering Information
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Electrical Characteristics of the Diode TC = 25°C unless otherwise noted
Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity
FGL60N100BNTD FGL60N100BNTD TO-264 Tube N/A N/A 30
Symbol Parameter Test Conditions Min. Typ. Max. Unit
Off Characteristics
BVCES Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 1 mA 1000 - - V
ICES Collector Cut-Off Current VCE = VCES, VGE = 0 V - - 1 mA
IGES G-E Leakage Current VGE = VGES, VCE = 0 V - - ±500 nA
On Characteristics
VGE(th) G-E Threshold Voltage IC = 60 mA, VCE = VGE 4.0 5.0 7.0 V
VCE(sat) Collector to Emitter Saturation Voltage
IC =10 A, VGE = 15 V -1.51.8V
IC = 60 A, VGE = 15 V, -2.52.9V
Dynamic Characteristics
Cies Input Capacitance
VCE = 10 V, VGE = 0 V,
f = 1MHz
- 6000 - pF
Coes Output Capacitance - 260 - pF
Cres Reverse Transfer Capacitance - 200 - pF
Switching Characteristics
td(on) Turn-On Delay Time
VCC = 600 V, IC = 60 A,
RG = 51 , VGE = 15 V,
Inductive Load, TC = 25oC
- 140 - ns
trRise Time - 320 - ns
td(off) Turn-Off Delay Time - 630 - ns
tfFall Time - 130 - ns
QgTotal Gate Charge
VCE = 600 V, IC = 60 A,
VGE = 15 V, TC = 25oC
- 275 - nC
Qge Gate to Emitter Charge - 45 - nC
Qgc Gate to Collector Charge - 95 - nC
Symbol Parameter Test Conditions Min. Typ. Max Unit
VFM Diode Forward Voltage IF = 15 A -1.21.7V
IF = 60 A -1.82.1V
trr Diode Reverse Recovery Time IF = 60 A, di/dt = 20 A/us -1.21.5us
IRInstantaneous VRRM = 1000 V - 0.05 2.0 uA
©2000 Fairchild Semiconductor Corporation 3www.fairchildsemi.com
FGL60N100BNTD Rev. C2
FGL60N100BNTD — 1000 V, 60 A NPT Trench IGBT
Typical Performance Characteristics
Figure 1. Typical Output Characteristics Figure 2. Typical Saturation Voltage Characteristics
Figure 3. Saturation Voltage vs. Case Figure 4. Saturation Voltage vs. VGE
Temperature at Variant Current Level
Figure 5. Saturatio n Voltage vs. VGE Figure 6. Saturation Voltage vs. VGE
012345
0
20
40
60
80
100 20V
15V
10V
9V
8V
7V
VGE = 6V
Common Emitter
TC = 25℃
Collector Current, I C [A]
Collector-Emitter Voltage, VCE [V]
01234
0
10
20
30
40
50
60
70
80
90
TC = 125 ℃
TC = 25℃
Common Emitter
VGE = 15V
TC = 25℃ ━━
TC = 125 ------℃
Collector Current, I C [A]
Collector-Emitter Voltage, VCE [V]
-50 0 50 100 150
1
2
3
IC=10A
30A
60A
80A
Common Emitter
VGE=15V
Collector-Emitter Voltage, VCE [V]
Case Temperature, TC []℃
4 8 12 16 20
0
2
4
6
8
10
Common Emitter
TC= - 40 OC
IC=10A
80A
60A
30A
Collector-Emitter Voltage, VCE[V]
Gate-Emitter Voltage, VGE [V]
4 8 12 16 20
0
2
4
6
8
10
Common Emitter
TC = 25℃
80A
60A
30A
IC = 10A
Collector-Emitter Voltage, VCE [V]
Gate-Emitter Voltage, VGE [V]
4 8 12 16 20
0
2
4
6
8
10 Common Emitter
TC = 125℃
80A
60A
30A
IC = 10A
Collector-Emitter Voltage, VCE [V]
Gate-Emitter Voltage, VGE [V]
©2000 Fairchild Semiconductor Corporation 4www.fairchildsemi.com
FGL60N100BNTD Rev. C2
FGL60N100BNTD — 1000 V, 60 A NPT Trench IGBT
Typical Performance Characteristics
Figure 7. Capacitance Characteristics Figure 8. Switching L oss vs . Gate Res ista nce
Figure 9. Switching Characteristics vs. Figure 10. Gate Charge Characteristics
Collector Current
Figure 11. SOA Characteristics Figu r e 12. Fo rw ard Cha rac te ris tic s
0 5 10 15 20 25 30
100
1000
10000
Common Emitter
VGE = 0V, f = 1MHz
TC = 25℃
Cres
Coes
Cies
Capacitance [pF]
Collector-Emitter Voltage, VCE [V]
0 50 100 150 200
10
100
1000
10000
VCC=600V, IC=60A
VGE=? 5V
TC=25oCTdoff
Tdon
Tr
Tf
Switching Time [ns]
Gate Resistance, RG [? ]
10 20 30 40 50 60
100
1000
VCC=600V, Rg=51Ω
VGE=± 15V, T
C=25℃
Tdon
Tr
Tf
Tdoff
Switching Time [ns]
Collector Current, IC [A]
0 50 100 150 200 250 300
0
5
10
15
20
Common Emitter
VCC=600V, RL=10 Ω
TC=25 ℃
Gate-Emitter Voltage,VGE [V]
Gate Charge, Qg [nC]
1 10 100 1000
0.1
1
10
100
Single Nonrepetitive Pulse
TC = 25℃
Curve must be darated
linearly with increase
in temperature
50us
100us
1ms
DC Operation
IC MAX. (Pulsed)
IC MAX. (Continuous)
Collector Current , I C [A]
Collector-Emitter Voltage, VCE [V]
0.1
1
10
100
0.0 0.5 1.0 1.5 2.0 2.5
TC = 25 ℃
TC = 100 ℃
Forward Voltage, VFM [V]
Forward Current, IF[A]
©2000 Fairchild Semiconductor Corporation 5www.fairchildsemi.com
FGL60N100BNTD Rev. C2
FGL60N100BNTD — 1000 V, 60 A NPT Trench IGBT
Typical Performance Characteristics
Figure 13. Reverse Recovery Characteristics Figure 14. Reverse Recovery Characteristics
vs. di/dt vs. Forward Current
Figure 15. Reverse Current vs. Reverse Voltage Figure 16. Junction Capacitance
Figure 17.Transient Thermal Impedance of IGBT
0 40 80 120 160 200 240
0.00
0.17
0.34
0.51
0.68
0.85
1.02
1.19
Irr
trr
IF=60A
TC=25?
di/dt [A/us]
Reverse Recovery Time, trr [us]
0
17
34
51
68
85
102
119
Reverse Recovery Current Irr [A]
10 20 30 40 50 60
0.4
0.6
0.8
1.0
1.2
Irr
trr
Forward Current, IF [A]
Reverse Recovery Time, trr [us]
4
6
8
10
12
di/dt=-20A/us
TC=25?
Reverse Recovery Current Irr [A]
0 300 600 900
1E-3
0.01
0.1
1
10
100
1000
TC = 150 ℃
TC= 25 ℃
Reverse Current, IR [uA]
Reverse Voltage, VR [V]
0.1 1 10 100
0
50
100
150
200
250 TC = 25 ℃
Capacitance, Cj [pF]
Reverse Voltage, VR [V]
10-4 10-3 10-2 10-1 100101
1E-3
0.01
0.1
1
10
0.1
0.5
0.2
0.05
0.02
0.01
s in g le p u ls e
Thermal Response, Z
THJC
[/W]℃
R ectangular P ulse D uration [sec]
t1
PDM
t2
©2000 Fairchild Semiconductor Corporation 6www.fairchildsemi.com
FGL60N100BNTD Rev. C2
FGL60N100BNTD — 1000 V, 60 A NPT Trench IGBT
Mechanical Dimensions
Figure 18. TO-264 3L - 3LD; TO264; MOLDED; JEDEC VARIATION AA
Package drawings are provided as a service to customers consider ing Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the draw ing and contact a Fairchild Semicond uctor r epresentative to ver ify or
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Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
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FGL60N100BNTD — 1000 V, 60 A NPT Trench IGBT
www.fairchildsemi.com
7
©2000 Fairchild Semiconductor Corporation
FGL60N100BNTD Rev. C2
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